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1. 发明授权

US6008539A Electrodes for p-type group III nitride compound semiconductors 失效
标题翻译： p型III族氮化物半导体电极
公开(公告)号：US6008539A
公开(公告)日：1999-12-28
申请号：US663696
申请日：1996-06-14
申请人： Naoki Shibata , Junichi Umezaki , Makoto Asai , Toshiya Uemura , Takahiro Kozawa , Tomohiko Mori , Takeshi Ohwaki
发明人： Naoki Shibata , Junichi Umezaki , Makoto Asai , Toshiya Uemura , Takahiro Kozawa , Tomohiko Mori , Takeshi Ohwaki
IPC分类号： H01L21/28 , H01L21/285 , H01L29/43 , H01L29/45 , H01L33/32 , H01L33/38 , H01L33/40 , H01L23/48
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/452 , H01L33/32
摘要： An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.
摘要翻译：具有双层结构的具有p型导电的III族氮化物化合物半导体的电极。第一金属电极层包括例如镍（Ni），第二金属电极层包括例如金（Au）。在具有p型导电性的III族氮化物化合物半导体上形成Ni层，在Ni层上形成Au层。热处理改变或反转元素Ni和Au的分布。也就是说，与Ni相比，在第III族氮化物化合物半导体中分布更深。结果，电极的电阻率降低，并且其欧姆特性以及其粘合强度得到改善。

2. 发明授权

US6121127A Methods and devices related to electrodes for p-type group III nitride compound semiconductors 有权
标题翻译：与p型III族氮化物半导体电极相关的方法和装置
公开(公告)号：US6121127A
公开(公告)日：2000-09-19
申请号：US440860
申请日：1999-11-16
申请人： Naoki Shibata , Junichi Umezaki , Makoto Asai , Toshiya Uemura , Takahiro Kozawa , Tomohiko Mori , Takeshi Ohwaki
发明人： Naoki Shibata , Junichi Umezaki , Makoto Asai , Toshiya Uemura , Takahiro Kozawa , Tomohiko Mori , Takeshi Ohwaki
IPC分类号： H01L21/285 , H01L29/45 , H01L33/32 , H01L33/40 , H01L21/28
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/452 , H01L33/32
摘要： An electrode for a Group III nitride compound semiconductor having p-type conduction that has a double layer structure. The first metal electrode layer comprising, for example, nickel (Ni) and the second metal electrode layer comprising, for example, gold (Au). The Ni layer is formed on the Group III nitride compound semiconductor having p-type conduction, and the Au layer is formed on the Ni layer. Heat treatment changes or reverses the distribution of the elements Ni and Au. Namely, Au is distributed deeper into the Group III nitride compound semiconductor than is Ni. As a result, the resistivity of the electrode is lowered and its ohmic characteristics are improved as well as its adhesive strength.
摘要翻译：具有双层结构的具有p型导电的III族氮化物化合物半导体的电极。第一金属电极层包括例如镍（Ni），第二金属电极层包括例如金（Au）。在具有p型导电性的III族氮化物化合物半导体上形成Ni层，在Ni层上形成Au层。热处理改变或反转元素Ni和Au的分布。也就是说，与Ni相比，在第III族氮化物化合物半导体中分布更深。结果，电极的电阻率降低，并且其欧姆特性以及其粘合强度得到改善。

3. 发明授权

US5753939A Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed 失效
标题翻译：使用III族氮化物化合物并具有形成电极的接触层的发光半导体器件
公开(公告)号：US5753939A
公开(公告)日：1998-05-19
申请号：US813393
申请日：1997-03-07
申请人： Michinari Sassa , Naoki Shibata , Shinya Asami , Masayoshi Koike , Junichi Umezaki , Takahiro Kozawa
发明人： Michinari Sassa , Naoki Shibata , Shinya Asami , Masayoshi Koike , Junichi Umezaki , Takahiro Kozawa
IPC分类号： H01L21/205 , H01L33/02 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/00
CPC分类号： H01L33/38 , H01L33/025 , H01L33/32 , H01L33/325 , H01L33/382 , H01L2933/0016 , H01L33/40
摘要： A light-emitting semiconductor device having an improved metal electrode and semiconductor structure that lowers the driving voltage of the device. The device has a hetero p-n junction structure. This structure includes: (1) an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; (2) a p-layer having p-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; and (3) an emission layer disposed between the n-layer and the p-layer. The device also has a metal electrode and a contact layer that is disposed between the p-layer and the metal electrode. The contact layer is doped with an acceptor impurity more heavily that is the p-layer. The acceptor impurity may be magnesium (Mg). The contact layer may be doped within the range of 1.times.10.sup.20 /cm.sup.3 to 1.times.10.sup.2l /cm.sup.3 and may comprise a first and a second contact layer.
摘要翻译：一种具有改善的金属电极和半导体结构的发光半导体器件，其降低了器件的驱动电压。该器件具有异质p-n结结构。该结构包括：（1）具有n型导电的n层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; （2）具有p型导电的p层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; 和（3）设置在n层和p层之间的发射层。该器件还具有设置在p层和金属电极之间的金属电极和接触层。接触层掺杂较多的受体杂质，即p层。受主杂质可以是镁（Mg）。接触层可以掺杂在1×10 20 / cm 3至1×102l / cm 3的范围内，并且可以包括第一和第二接触层。

4. 发明授权

US07646036B2 Electrode and Group III nitride-based compound semiconductor light-emitting device having the electrode 有权
标题翻译：具有电极的电极和III族氮化物系化合物半导体发光元件
公开(公告)号：US07646036B2
公开(公告)日：2010-01-12
申请号：US12068247
申请日：2008-02-04
申请人： Takahiro Kozawa , Kazuyoshi Tomita , Toshiya Uemura , Shigemi Horiuchi
发明人： Takahiro Kozawa , Kazuyoshi Tomita , Toshiya Uemura , Shigemi Horiuchi
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42
摘要： An object of the invention is to prevent migration of silver contained in an electrode of a Group III nitride-based compound semiconductor light-emitting device. A positive electrode is formed on a p-type layer. In the positive electrode, an ITO light-transmitting electrode layer, a silver alloy reflecting electrode layer, a diffusion-preventing layer in which a Ti layer and a Pt layer are stacked, and a gold thick-film electrode are sequentially stacked on the p-type layer. The reflecting electrode layer made of a silver alloy contains palladium (Pd) and copper (Cu) as additives and also contains oxygen (O). By virtue of this structure, migration of silver from the silver alloy reflecting electrode layer and blackening of the interface between the silver alloy layer and the ITO light-transmitting electrode layer disposed thereunder are prevented, whereby light extraction efficiency can be enhanced.
摘要翻译：本发明的目的是防止在III族氮化物系化合物半导体发光元件的电极中含有的银的迁移。正电极形成在p型层上。在正极中，将ITO透光电极层，银合金反射电极层，层叠有Ti层和Pt层的扩散防止层和金厚膜电极依次层叠在p 型层。由银合金制成的反射电极层包含钯（Pd）和铜（Cu）作为添加剂，并且还含有氧（O）。由于这种结构，防止银从银合金反射电极层的迁移以及布置在其上的银合金层和ITO透光电极层之间的界面变黑，从而可以提高光提取效率。

5. 发明授权

US06864502B2 III group nitride system compound semiconductor light emitting element 有权
标题翻译： III族氮化物系化合物半导体发光元件
公开(公告)号：US06864502B2
公开(公告)日：2005-03-08
申请号：US10664056
申请日：2003-09-17
申请人： Naoki Shibata , Takahiro Kozawa
发明人： Naoki Shibata , Takahiro Kozawa
IPC分类号： H01L33/06 , H01L33/32 , H01L29/06 , H01L31/109 , H01L33/00 , H01L31/328 , H01L31/336 , H01L31/72
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06
摘要： A III group nitride system compound semiconductor light emitting element has a quantum well structure that includes a well layer of AlX1GaY1In1-X1-Y1N, where 0
摘要翻译： III族氮化物系化合物半导体发光元件具有量子阱结构，其包括AlX1GaY1In1-X1-Y1N的阱层，其中0

6. 发明授权

US06649943B2 Group III nitride compound semiconductor light-emitting element 有权
标题翻译： III族氮化物化合物半导体发光元件
公开(公告)号：US06649943B2
公开(公告)日：2003-11-18
申请号：US10163088
申请日：2002-06-06
申请人： Naoki Shibata , Takahiro Kozawa , Kazuyoshi Tomita , Tetsu Kachi
发明人： Naoki Shibata , Takahiro Kozawa , Kazuyoshi Tomita , Tetsu Kachi
IPC分类号： H01L310328
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
摘要： Disclosed is a Group III nitride compound semiconductor light-emitting element formed of Group III nitride compound semiconductor layers, including a multi-layer containing light-emitting layers; a p-type semiconductor layer; and an n-type semiconductor layer, wherein the multi-layer includes a multiple quantum barrier-well layer containing quantum-barrier-formation barrier layers formed from a Group III nitride compound semiconductor and quantum-barrier-formation well layers formed from a Group III nitride compound semiconductor, the barrier layers and the well layers being laminated alternately and cyclically, and a plurality of low-energy-band-gap layers which emit light of different wavelengths; and the multiple quantum barrier-well layer is provided between the low-energy-band-gap layers.
摘要翻译：公开了由包含多层含有发光层的III族氮化物化合物半导体层形成的III族氮化物化合物半导体发光元件; p型半导体层; 和n型半导体层，其中所述多层包括由III族氮化物化合物半导体形成的量子势垒形成阻挡层和由III族形成的量子势垒形成阱层的多量子势垒阱层氮化物化合物半导体，阻挡层和阱层交替地和循环地层叠，以及发射不同波长的光的多个低能带隙层; 并且在低能带隙层之间设置多量子势阱层。

7. 发明申请

US20060273324A1 Light-emitting diode and process for producing the same 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20060273324A1
公开(公告)日：2006-12-07
申请号：US10566211
申请日：2004-07-26
申请人： Makoto Asai , Shiro Yamazaki , Takahiro Kozawa , Mitsuhisa Narukawa
发明人： Makoto Asai , Shiro Yamazaki , Takahiro Kozawa , Mitsuhisa Narukawa
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/20 , H01L24/32 , H01L33/32 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48464 , H01L2224/73265 , H01L2924/10158 , H01L2924/00014 , H01L2924/00
摘要： The back surface of a semiconductor crystal substrate 102 which has a thickness of about 150 μm and is made of undoped GaN bulk crystal consists of a polished plane 102a which is flattened through dry-etching and a grinded plane 102b which is formed in a taper shape and is flattened through dry-etching. On about 10 nm in thickness of GaN n-type clad layer (low carrier concentration layer) 104, about 2 nm in thickness of Al0.005In0.045Ga0.95N well layer 51 and about 18 nm in thickness of Al0.12Ga0.88N barrier layer 52 are deposited alternately as an active layer 105 which emits ultraviolet light and has MQW structure comprising 5 layers in total. Before forming a negative electrode (n-electrode c) on the polished plane of the semiconductor substrate a, the polished plane is dry-etched.
摘要翻译：半导体晶体基板102的背面，其厚度为约150μm，由未掺杂的GaN体晶体制成，其由经干蚀刻而平坦化的抛光平面102a和形成在其中的研磨平面102b 锥形，并通过干蚀刻变平。在GaN n型覆层（低载流子浓度层）104的厚度约为10nm的情况下，厚度为约0.01nm的Al 0.005 In 0.95 Ga 0.95 N阱层51和厚度约为18nm的Al 0.12 N Ga 0.88 N阻挡层52交替地沉积为发射紫外光的有源层105和总共有5层MQW结构。在半导体衬底a的抛光平面上形成负电极（n电极c）之前，对该抛光平面进行干式蚀刻。

8. 发明授权

US06891203B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US06891203B2
公开(公告)日：2005-05-10
申请号：US10250772
申请日：2002-01-04
申请人： Takahiro Kozawa , Naoki Shibata
发明人： Takahiro Kozawa , Naoki Shibata
IPC分类号： H01L27/15 , H01L33/10 , H01L33/32 , H01L33/50 , H01L33/52 , H01L33/62 , H01L29/24
CPC分类号： H01L33/32 , H01L33/08 , H01L33/50 , H01L2224/49107 , H01L2224/73265 , H01L2924/01025 , H01L2924/01079 , H01L2924/12041
摘要： According to the invention, a Group III nitride compound semiconductor light-emitting element is provided with a light-emitting layer comprising two layers of different in ratio of AlGaInN composition, and emitting light with an emission peak wavelength in an ultraviolet region and light with an emission peak wavelength in a visible region. The light-emitting element and a fluorescent material excited by light in the ultraviolet region are combined to configure a light emitting device.
摘要翻译：根据本发明，III族氮化物化合物半导体发光元件设置有包含两层不同比例的AlGaInN组成的发光层，并且发射具有紫外区域中的发射峰值波长的光和具有发射峰值波长在可见光区域。将发光元件和由紫外线区域的光激发的荧光体组合，构成发光元件。

9. 发明授权

US07247884B2 Group III nitride compound semiconductor light-emitting element 有权
标题翻译： III族氮化物化合物半导体发光元件
公开(公告)号：US07247884B2
公开(公告)日：2007-07-24
申请号：US10164309
申请日：2002-06-07
申请人： Naoki Shibata , Takahiro Kozawa
发明人： Naoki Shibata , Takahiro Kozawa
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L33/08 , H01L25/167 , H01L33/50 , H01L2224/49107 , H01L2924/01025 , H01L2924/01066 , H01L2924/01067 , H01L2924/01068 , H01L2924/01079
摘要： A photo-excited semiconductor layer smaller in band gap energy than a light-emitting layer made of a Group III nitride compound semiconductor is provided between a substrate and the light-emitting layer. The photo-excited semiconductor layer is excited by the light emitted from the light-emitting layer to thereby emit light at a wavelength longer than that of the light emitted from the light-emitting layer.
摘要翻译：在基板和发光层之间设置有比由III族氮化物化合物半导体构成的发光层更小的带隙能量的光电子半导体层。光激发半导体层被从发光层发射的光激发，从而发出比从发光层发出的光更长的波长的光。

10. 发明授权

US07897987B2 Light-emitting device including light-emitting diode and stacked light-emitting phosphor layers 有权
标题翻译：发光装置包括发光二极管和堆叠的发光荧光体层
公开(公告)号：US07897987B2
公开(公告)日：2011-03-01
申请号：US12382040
申请日：2009-03-06
申请人： Mitsuhiro Inoue , Kenji Ito , Kazuyohi Tomita , Tetsu Kachi , Takahiro Kozawa , Satoru Kato , Tadashi Ichikawa
发明人： Mitsuhiro Inoue , Kenji Ito , Kazuyohi Tomita , Tetsu Kachi , Takahiro Kozawa , Satoru Kato , Tadashi Ichikawa
IPC分类号： H01L33/00
CPC分类号： H01L33/504 , H01L2224/48091 , H01L2924/00014
摘要： A light-emitting device includes a light-emitting diode, a red light-emitting phosphor layer, a yellow light-emitting phosphor layer, and a blue light-emitting phosphor layer. These layers are stacked in the stacking sequence of the yellow, blue, and red phosphor layers in order of increasing distance from the LED. The stacking sequence of the yellow and blue phosphor layers is first determined in such a manner that these layers do not interact with each other. The stacking sequence of the red and yellow phosphor layers and the stacking sequence of the red and blue phosphor layers are determined by the discriminant D. This determination of the stacking sequence suppresses a reduction in the conversion efficiency of the phosphors due to concentration quenching, improving the emission efficiency of the light-emitting device.
摘要翻译：发光装置包括发光二极管，红色发光荧光体层，黄色发光荧光体层和蓝色发光荧光体层。这些层按照与LED的距离增加的顺序堆叠在黄色，蓝色和红色荧光体层的堆叠顺序中。首先以这样的方式确定黄色和蓝色磷光体层的堆叠顺序，使得这些层彼此不相互作用。红色和黄色荧光体层的堆叠顺序和红色和蓝色荧光体层的堆叠序列由判别式D确定。堆积顺序的确定抑制了由于浓度淬灭引起的荧光体的转换效率的降低，改进发光装置的发光效率。

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