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1. 发明授权

US09505081B2 Manufacturing method for outer joint member of constant velocity universal joint and outer joint member 有权
标题翻译：等速万向节和外接头构件外接头构件的制造方法
公开(公告)号：US09505081B2
公开(公告)日：2016-11-29
申请号：US14651480
申请日：2013-11-22
申请人： Naoki Nakagawa , Shintaro Suzuki , Shigeki Matsushita
发明人： Naoki Nakagawa , Shintaro Suzuki , Shigeki Matsushita
IPC分类号： B23K15/04 , B23P15/00 , C21D1/18 , C21D1/42 , C21D9/50 , F16D3/202 , F16D3/223 , B23K15/00 , B23K15/06 , C21D9/40 , F16D3/20 , C21D9/28
CPC分类号： B23K15/04 , B23K15/0006 , B23K15/0046 , B23K15/06 , B23P15/00 , B23P2700/11 , C21D1/18 , C21D1/42 , C21D9/28 , C21D9/40 , C21D9/50 , F16D3/20 , F16D3/202 , F16D3/223 , Y02P10/253 , Y10T29/49826 , Y10T403/477
摘要： A manufacturing method for an outer joint member of a constant velocity universal joint includes forming a cup member and a shaft member, forming a joining hole in a thickness of a bottom portion to prepare the cup member as a finished component, and forming a joining outer surface on an end portion of the shaft member to be joined onto the bottom portion of the cup member to prepare the shaft member as a finished component. The method also includes fitting the joining hole of the cup member and the joining outer surface of the shaft member as the finished components to each other, and welding a fitting portion between the joining hole and the joining outer surface through irradiation of a beam from an inner side of the cup member, a diameter of the fitting portion being an equal dimension for each joint size.
摘要翻译：一种等速万向接头的外接头构件的制造方法，包括形成杯构件和轴构件，形成底部的厚度的接合孔，以将杯构件制成成品，并形成接合外在轴构件的端部上的表面将被接合到杯构件的底部上，以将轴构件制成成品。该方法还包括将杯构件的接合孔和轴构件的接合外表面作为最终部件彼此配合，并且通过从接合孔和接合外表面的光束照射来焊接配合部分杯形构件的内侧，配合部的直径为每个接头尺寸相等的尺寸。

2. 发明授权

US10478914B2 Method for butt welding, butt welded joint, and outside joint member for constant velocity universal joint 有权
公开(公告)号：US10478914B2
公开(公告)日：2019-11-19
申请号：US15319097
申请日：2015-05-20
申请人： Naoki Nakagawa , Shintaro Suzuki , Kenichi Nakano , Takuya Fujita , Kiyohiro Suzuki , Renji Natsume , Tatsuro Sugiyama , Masazumi Kobayashi
发明人： Naoki Nakagawa , Shintaro Suzuki , Kenichi Nakano , Takuya Fujita , Kiyohiro Suzuki , Renji Natsume , Tatsuro Sugiyama , Masazumi Kobayashi
IPC分类号： B23K10/00 , B23K15/00 , B23K26/21 , F16D3/205 , F16D3/223 , B23K15/04 , B23K26/08 , B23K33/00 , G01N29/04 , G01N29/22 , G01N29/28 , B23K26/282 , F16D1/027 , F16D3/227 , B23K101/04 , B23K103/04 , B23K103/18
摘要： For butt-welding, which includes bringing joining end surfaces of a cup member and a shaft member into abutment against each other and radiating a high energy intensity beam from a radially outer side, the shaft member has a recess on a radially inner side of the joining end surface to obtain a welded portion having a closed hollow cavity on a radially inner side after butt-welding. The joining end surface (protruding surface) of the cup member protrudes toward a radially inner side with respect to an inner diameter of the joining end surface of the shaft member. With this, a welded portion of an outer joint member of a constant velocity universal joint, which is manufactured by joining the cup member and the shaft member, can be improved in strength and quality.

3. 发明授权

US10213868B2 Manufacturing method for constant velocity universal joint outer joint member and outer joint member 有权
公开(公告)号：US10213868B2
公开(公告)日：2019-02-26
申请号：US15319086
申请日：2015-05-20
申请人： Naoki Nakagawa , Shintaro Suzuki
发明人： Naoki Nakagawa , Shintaro Suzuki
IPC分类号： B23K15/00 , B23K15/04 , B23K15/08 , F16D3/24 , C21D9/00 , F16D3/20 , F16D3/202
摘要： A method of manufacturing an outer joint member of a constant velocity universal joint includes forming cup and shaft members of medium carbon steel, the cup member being manufactured by preparing a cup member having cylindrical and bottom portions being integrally formed, and a fitting hole formed in a thick portion of the bottom portion, the shaft member being manufactured by preparing a shaft member having a fitting outer surface formed at an end portion of the shaft member to be joined to the bottom portion of the cup member, and fitting the fitting hole of the cup member to the fitting outer surface of the shaft member. The method also includes welding the cup and shaft members from an inner side of the cup member to a fitted portion between the cup and shaft members.

4. 发明申请

US20120112194A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US20120112194A1
公开(公告)日：2012-05-10
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
IPC分类号： H01L33/08
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译：本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

5. 发明申请

US20120020056A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20120020056A1
公开(公告)日：2012-01-26
申请号：US13259204
申请日：2010-04-23
申请人： Yusuke Yamagata , Naoki Nakagawa , Toshiaki Fujino , Takanori Okumura , Toshiyuki Yoneda , Toru Kokogawa , Kenji Arita
发明人： Yusuke Yamagata , Naoki Nakagawa , Toshiaki Fujino , Takanori Okumura , Toshiyuki Yoneda , Toru Kokogawa , Kenji Arita
IPC分类号： H05K7/00 , B32B37/12 , G09F13/04
CPC分类号： G09F9/33 , G02F1/133308 , G02F2001/133302 , G02F2001/133354 , G02F2202/28 , G09F9/35 , H01L51/0097
摘要： A display device where concentration of a stress in a display panel is suppressed, to allow improvement in display quality, reliability and the like. A display device includes a display panel, an adhesive layer and a supporting substrate. The adhesive layer is provided on the display panel. The supporting substrate is made up of a member previously provided with curved surfaces. The display panel is bonded onto the curved surface of the supporting substrate by the adhesive layer. The supporting substrate supports the display panel in a curved form along the curved surface.
摘要翻译：抑制显示面板中的应力集中的显示装置，能够提高显示质量，可靠性等。显示装置包括显示面板，粘合剂层和支撑基板。粘合剂层设置在显示面板上。支撑基板由预先设置有曲面的部件构成。显示面板通过粘合剂层粘合到支撑基板的弯曲表面上。支撑基板沿着曲面将弯曲形式支撑显示面板。

6. 发明申请

US20110198606A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US20110198606A1
公开(公告)日：2011-08-18
申请号：US13010281
申请日：2011-01-20
申请人： Koji Oda , Tomoyuki Irizumi , Naoki Nakagawa , Takeshi Ono
发明人： Koji Oda , Tomoyuki Irizumi , Naoki Nakagawa , Takeshi Ono
IPC分类号： H01L33/16 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/04
摘要： An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.
摘要翻译：本发明的示例性方面是一种薄膜晶体管，包括：形成在基板上的栅电极; 栅极绝缘膜，其包括氮化物膜并覆盖所述栅电极; 以及半导体层，其被设置为与栅极电极相对设置，其间具有栅极绝缘膜，并且具有形成在至少与氮化物膜接触的界面中的微晶半导体层，其中微晶半导体层包含氧在至少与氮化物膜的界面附近的浓度高于含氮的浓度，氮从氮化膜扩散。

7. 发明授权

US07834962B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US07834962B2
公开(公告)日：2010-11-16
申请号：US12330105
申请日：2008-12-08
申请人： Tetsuya Satake , Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Takeshi Ono , Naoki Nakagawa , Suguru Nagae
发明人： Tetsuya Satake , Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Takeshi Ono , Naoki Nakagawa , Suguru Nagae
IPC分类号： G02F1/1333 , G02F1/1335
CPC分类号： G02F1/133305 , G02F1/133512 , G02F2001/133354
摘要： In a liquid crystal display (10) having a curved display surface, long sides of pixel structures (11) are arranged along the curve direction (Y) of the display surface and on a side of counter substrate provided is a black matrix having a black matrix opening (41a) whose length in the curve direction (Y) is not longer than E−L {(T1/2)+(T2/2)+d}/R, assuming that the length of the display surface in the curve direction (Y) is L, the thickness of an array substrate is T1, the thickness of the counter substrate is T2, the size of the gap between the array substrate and the counter substrate is d, the radius of curvature of the curved display surface is R and the length of a long side of a pixel electrode (29) provided in each of the pixel structures (11) is E. It thereby becomes possible to suppress display unevenness resulting from positional misalignment of the two substrates due to curvature and provide a liquid crystal display achieving a high-quality display image.
摘要翻译：在具有弯曲显示面的液晶显示器（10）中，像素结构（11）的长边沿着显示面的曲线方向（Y）配置，在相对基板的一侧设有具有黑色假设曲线中的显示面的长度，曲线方向（Y）的长度不长于E-L {（T1 / 2）+（T2 / 2）+ d} / R的矩阵开口41a 方向（Y）为L，阵列基板的厚度为T1，对置基板的厚度为T2，阵列基板与对置基板的间隔尺寸为d，曲面显示面的曲率半径是R，并且设置在每个像素结构（11）中的像素电极（29）的长边的长度为E.因此，由此可以抑制由于曲率而导致的两个基板的位置偏移导致的显示不均匀，并且提供实现高质量显示图像的液晶显示器。

8. 发明申请

US20090290113A1 DISPLAY DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090290113A1
公开(公告)日：2009-11-26
申请号：US12471970
申请日：2009-05-26
申请人： Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Naoki Nakagawa , Masafumi Agari , Tetsuya Satake , Toru Kokogawa , Kenji Arita
发明人： Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Naoki Nakagawa , Masafumi Agari , Tetsuya Satake , Toru Kokogawa , Kenji Arita
IPC分类号： G02F1/1333 , B32B37/00
CPC分类号： B32B38/1866 , B32B2037/243 , B32B2309/10 , B32B2457/202 , G02F1/133305 , G02F2201/503
摘要： The display device includes a pair of insulating substrates arranged so as to be opposed, a bonding layer, and a strain suppressing plate. The bonding layer is provided on the outer surface side of one insulating substrate. The strain suppressing plate has rigidity higher than that of the insulating substrate to suppress the strain caused by curving the insulating substrate. The strain suppressing plate is fixed to the insulating substrate by the bonding layer.
摘要翻译：显示装置包括一对绝缘基板，其被布置为相对，接合层和应变抑制板。接合层设置在一个绝缘基板的外表面侧。应变抑制板的刚性高于绝缘基板的刚性，以抑制由于弯曲绝缘基板引起的应变。应变抑制板通过接合层固定在绝缘基板上。

9. 发明授权

US07553778B2 Method for producing a semiconductor device including crystallizing an amphorous semiconductor film 失效
标题翻译：一种半导体器件的制造方法，包括使两相半导体膜结晶化
公开(公告)号：US07553778B2
公开(公告)日：2009-06-30
申请号：US11356288
申请日：2006-02-17
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.
摘要翻译：一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜，以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜。激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。

10. 发明申请

US20090159884A1 THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管，其制造方法和显示器件
公开(公告)号：US20090159884A1
公开(公告)日：2009-06-25
申请号：US12335806
申请日：2008-12-16
申请人： Koji ODA , Naoki Nakagawa , Takeshi Ono , Yusuke Uchida
发明人： Koji ODA , Naoki Nakagawa , Takeshi Ono , Yusuke Uchida
IPC分类号： H01L29/78 , H01L21/02
CPC分类号： H01L29/4908 , H01L29/66765
摘要： A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.
摘要翻译：根据本发明的实施例的制造薄膜晶体管的方法包括在栅电极上形成栅极绝缘体的步骤。栅极绝缘体至少包括与氢化非晶硅膜接触的第一区域和位于第一区域下方的第二区域。使用包括NH 3，N 2和SiH 4，H 2气体或H 2和He的混合物的源气体来沉积第一和第二区域。通过将流量比NH3 / SiH4设定在11〜14的范围内来沉积第一区域，并且通过将流量比NH3 / SiH4设定为等于或小于4来沉积第二区域。因此可以提供具有优异特性和高可靠性的薄膜晶体管，其制造方法以及安装在其上的薄膜晶体管的显示装置。

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