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1. 发明申请

US20090230498A1 OPTICAL SEMICONDUCTOR DEVICE 失效
标题翻译：光学半导体器件
公开(公告)号：US20090230498A1
公开(公告)日：2009-09-17
申请号：US12397765
申请日：2009-03-04
申请人： Takaki Iwai , Hironari Takehara , Hisatada Yasukawa
发明人： Takaki Iwai , Hironari Takehara , Hisatada Yasukawa
IPC分类号： H01L31/103
CPC分类号： H01L31/10 , H01L27/1443 , H01L27/14643 , H01L31/103
摘要： An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.
摘要翻译：光学半导体器件包括半导体衬底; 形成在所述半导体基板上的受光元件; 形成在所述半导体衬底上并位于所述光接收元件附近的光吸收元件; 以及形成在半导体基板上并用于信号处理的半导体元件。光吸收元件包括第五半导体层，并且光接收元件中的光吸收区域具有与光吸收元件中的光吸收区域不同的结构。

2. 发明授权

US08030728B2 Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US08030728B2
公开(公告)日：2011-10-04
申请号：US12397765
申请日：2009-03-04
申请人： Takaki Iwai , Hironari Takehara , Hisatada Yasukawa
发明人： Takaki Iwai , Hironari Takehara , Hisatada Yasukawa
IPC分类号： H01L31/00
CPC分类号： H01L31/10 , H01L27/1443 , H01L27/14643 , H01L31/103
摘要： An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.
摘要翻译：光学半导体器件包括半导体衬底; 形成在所述半导体基板上的受光元件; 形成在所述半导体衬底上并位于所述光接收元件附近的光吸收元件; 以及形成在半导体基板上并用于信号处理的半导体元件。光吸收元件包括第五半导体层，并且光接收元件中的光吸收区域具有与光吸收元件中的光吸收区域不同的结构。

3. 发明申请

US20090261441A1 OPTICAL SEMICONDUCTOR DEVICE 审中-公开
标题翻译：光学半导体器件
公开(公告)号：US20090261441A1
公开(公告)日：2009-10-22
申请号：US12400346
申请日：2009-03-09
申请人： Hisatada Yasukawa , Hironari Takehara , Takaki Iwai
发明人： Hisatada Yasukawa , Hironari Takehara , Takaki Iwai
IPC分类号： H01L31/02 , H01L31/112
CPC分类号： H01L31/103 , G11B7/13 , G11B2007/0006
摘要： An optical semiconductor device includes a light-receiving element on a semiconductor substrate of a first conductivity type, the light-receiving element including a light-receiving portion for converting incident light to an electrical current signal and performing a current amplification. The light-receiving portion includes: a semiconductor layer formed on the semiconductor substrate and having an impurity concentration substantially equal to or less than that of the semiconductor substrate; a first semiconductor region of a second conductivity type formed on the semiconductor layer and having an impurity concentration higher than that of the semiconductor layer; and a second semiconductor region of the first conductivity type selectively formed between the semiconductor substrate and the semiconductor layer and having an impurity concentration higher than those of the semiconductor substrate and the semiconductor layer.
摘要翻译：光学半导体器件包括在第一导电类型的半导体衬底上的光接收元件，该光接收元件包括用于将入射光转换成电流信号并执行电流放大的光接收部分。光接收部分包括：形成在半导体衬底上并具有基本上等于或小于半导体衬底的杂质浓度的杂质浓度的半导体层; 在所述半导体层上形成的杂质浓度高于所述半导体层的杂质浓度的第二导电类型的第一半导体区域; 以及第一导电类型的第二半导体区域，其选择性地形成在半导体衬底和半导体层之间，并且具有比半导体衬底和半导体层的杂质浓度更高的杂质浓度。

4. 发明授权

US07483467B2 Semiconductor laser unit and method for manufacturing optical reflection film 失效
标题翻译：半导体激光单元及其制造方法
公开(公告)号：US07483467B2
公开(公告)日：2009-01-27
申请号：US11518173
申请日：2006-09-11
申请人： Naoki Kohara , Hironari Takehara , Takaki Iwai , Hisatada Yasukawa
发明人： Naoki Kohara , Hironari Takehara , Takaki Iwai , Hisatada Yasukawa
IPC分类号： H01S5/00
CPC分类号： H01S5/40 , H01S5/026 , H01S5/4087
摘要： The semiconductor laser unit comprises a laser emission part having a plurality of semiconductor laser elements of different laser beam wavelengths, and a mirror part having an optical reflection film for reflecting laser beams emitted from the laser emission part. The mirror part is blocked out into a plurality of areas to which each laser beam emitted from each of the plurality of semiconductor laser elements enters, and at the same time the reflection film having high reflectance for the laser beams that enter selectively on the areas is provided in each of the plurality of areas.
摘要翻译：半导体激光器单元包括具有不同激光束波长的多个半导体激光元件的激光发射部分和具有用于反射从激光发射部分发出的激光束的光反射膜的反射镜部分。反射镜部分被阻挡到从多个半导体激光元件中的每一个发射的每个激光束进入的多个区域中，并且同时对于选择性地进入该区域的激光束具有高反射率的反射膜是设置在多个区域的每一个区域中。

5. 发明申请

US20050189546A1 Semiconductor photodetector device 有权
标题翻译：半导体光电探测器
公开(公告)号：US20050189546A1
公开(公告)日：2005-09-01
申请号：US11059500
申请日：2005-02-17
申请人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
发明人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
IPC分类号： H01L27/144 , H01L27/15 , H01L31/0288 , H01L31/103
CPC分类号： H01L27/1443 , H01L31/0288 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
摘要翻译：一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。的第三个地区。

6. 发明申请

US20090032896A1 OPTICAL SEMICONDUCTOR DEVICE 失效
标题翻译：光学半导体器件
公开(公告)号：US20090032896A1
公开(公告)日：2009-02-05
申请号：US12173429
申请日：2008-07-15
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
IPC分类号： H01L31/11
CPC分类号： H01L31/1105 , G11B7/13
摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.
摘要翻译：光学半导体器件包括用于接收入射光的光电晶体管。光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

7. 发明授权

US07605049B2 Optical semiconductor device and manufacturing method for same 失效
标题翻译：光半导体器件及其制造方法
公开(公告)号：US07605049B2
公开(公告)日：2009-10-20
申请号：US11149258
申请日：2005-06-10
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai , Ryoichi Ito
IPC分类号： H01L21/76 , H01L21/311 , G02B6/36
CPC分类号： H01L31/02165 , H01L27/14685
摘要： A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.
摘要翻译：形成集成电路的晶体管，光电检测器和微镜安装在本发明的光学半导体器件的同一半导体衬底上，该半导体衬底具有形成在光电检测器上的抗反射膜，第一绝缘膜是形成在防反射膜上，其中在防反射膜被暴露的状态下形成开口;以及蚀刻停止膜，其形成在第一绝缘膜上并且在第一绝缘体中的开口周围留下的蚀刻停止膜在防反射膜上以及在微反射镜上方的周边周围的膜。

8. 发明授权

US07538404B2 Optical semiconductor device and method for manufacturing the same 失效
标题翻译：光半导体装置及其制造方法
公开(公告)号：US07538404B2
公开(公告)日：2009-05-26
申请号：US11489577
申请日：2006-07-20
申请人： Tsutomu Miyajima , Takaki Iwai , Hisatada Yasukawa
发明人： Tsutomu Miyajima , Takaki Iwai , Hisatada Yasukawa
IPC分类号： H01L31/058
CPC分类号： H01L31/02165 , H01L27/1462
摘要： An optical semiconductor device includes a first light receiving region and a second light receiving region provided on a substrate and the first and second light receiving regions include light receiving elements, respectively. A first anti-reflection film is formed in the first light receiving region of the substrate and a second anti-reflection film is formed in the second light receiving region of the substrate. The reflectance of the first anti-reflection film for a first wavelength range of light is lower than the reflectance of the second anti-reflection film for the first wavelength range of light and the reflectance of the second anti-reflection film for a second wavelength range of light which is different from the first wavelength range of light is lower than the reflectance of the first anti-reflection film for the second wavelength range of light.
摘要翻译：光学半导体器件包括第一光接收区域和设置在衬底上的第二光接收区域，并且第一和第二光接收区域分别包括光接收元件。第一防反射膜形成在基板的第一光接收区域中，并且第二防反射膜形成在基板的第二光接收区域中。用于第一波长范围的第一抗反射膜的反射率低于第一波长范围的第二防反射膜的反射率和第二波长范围的第二防反射膜的反射率与第一波长范围的光不同的光低于第二波长范围的第一防反射膜的反射率。

9. 发明申请

US20070023770A1 Optical semiconductor device and method for manufacturing the same 失效
标题翻译：光半导体装置及其制造方法
公开(公告)号：US20070023770A1
公开(公告)日：2007-02-01
申请号：US11489577
申请日：2006-07-20
申请人： Tsutomu Miyajima , Takaki Iwai , Hisatada Yasukawa
发明人： Tsutomu Miyajima , Takaki Iwai , Hisatada Yasukawa
IPC分类号： H01L33/00 , H01L29/18 , H01L31/00 , H01L31/0232
CPC分类号： H01L31/02165 , H01L27/1462
摘要： An optical semiconductor device includes a first light receiving region and a second light receiving region provided on a substrate and the first and second light receiving regions include light receiving elements, respectively. A first anti-reflection film is formed in the first light receiving region of the substrate and a second anti-reflection film is formed in the second light receiving region of the substrate. The reflectance of the first anti-reflection film for a first wavelength range of light is lower than the reflectance of the second anti-reflection film for the first wavelength range of light and the reflectance of the second anti-reflection film for a second wavelength range of light which is different from the first wavelength range of light is lower than the reflectance of the first anti-reflection film for the second wavelength range of light.
摘要翻译：光学半导体器件包括第一光接收区域和设置在衬底上的第二光接收区域，并且第一和第二光接收区域分别包括光接收元件。第一防反射膜形成在基板的第一光接收区域中，并且第二防反射膜形成在基板的第二光接收区域中。用于第一波长范围的第一抗反射膜的反射率低于第一波长范围的第二防反射膜的反射率和第二波长范围的第二防反射膜的反射率与第一波长范围的光不同的光低于第二波长范围的第一防反射膜的反射率。

10. 发明授权

US07888765B2 Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US07888765B2
公开(公告)日：2011-02-15
申请号：US12173429
申请日：2008-07-15
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
IPC分类号： H01L31/102
CPC分类号： H01L31/1105 , G11B7/13
摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.
摘要翻译：光学半导体器件包括用于接收入射光的光电晶体管。光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

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