专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07432958B2 Image pickup apparatus with function of adjusting incident light quantity 有权
标题翻译：具有调整入射光量功能的摄像装置
公开(公告)号：US07432958B2
公开(公告)日：2008-10-07
申请号：US11208550
申请日：2005-08-23
申请人： Naoki Hanada , Hiroyasu Kunimi , Norio Kurashige , Tetsuya Oura , Hiroshi Nishiyama
发明人： Naoki Hanada , Hiroyasu Kunimi , Norio Kurashige , Tetsuya Oura , Hiroshi Nishiyama
IPC分类号： H04N5/225 , H04N5/235 , H04N5/228 , H04N5/262
CPC分类号： H04N5/2252 , H04N5/23293
摘要： A video camera which is provided with an inter-line type CCD and also which enjoys a function as a digital still camera. The video camera includes an irising mechanism for adjusting a quantity of light incident upon the CCD, an iris driving circuit for driving the irising mechanism, and a camera microcomputer for controlling operations of adjusting an incident-light quantity by the irising mechanism by controlling the iris driving circuit. The camera microcomputer controls the iris driving circuit to drive the irising mechanism, whereby the incident light upon the CCD is blocked to perform only a read-out operation while data of all the pixels is read out from the CCD.
摘要翻译：具有行间CCD型的摄像机，作为数码相机具有功能。视频摄像机包括用于调节入射到CCD上的光量的虹膜机构，用于驱动虹膜机构的虹膜驱动电路，以及照相机微机，用于通过控制虹膜来控制由虹膜机构调节入射光量的操作驱动电路。相机微型计算机控制光圈驱动电路来驱动虹膜机构，由此CCD上的入射光被遮挡以仅执行读出操作，同时从CCD读出所有像素的数据。

2. 发明申请

US20060038914A1 Image pickup apparatus with function of adjusting incident light quantity 有权
标题翻译：具有调整入射光量功能的摄像装置
公开(公告)号：US20060038914A1
公开(公告)日：2006-02-23
申请号：US11208550
申请日：2005-08-23
申请人： Naoki Hanada , Hiroyasu Kunimi , Norio Kurashige , Tetsuya Oura , Hiroshi Nishiyama
发明人： Naoki Hanada , Hiroyasu Kunimi , Norio Kurashige , Tetsuya Oura , Hiroshi Nishiyama
IPC分类号： H04N5/235
CPC分类号： H04N5/2252 , H04N5/23293
摘要： A video camera which is provided with an inter-line type CCD and also which enjoys a function as a digital still camera. The video camera includes an irising mechanism for adjusting a quantity of light incident upon the CCD, an iris driving circuit for driving the irising mechanism, and a camera microcomputer for controlling operations of adjusting an incident-light quantity by the irising mechanism by controlling the iris driving circuit. The camera microcomputer controls the iris driving circuit to drive the irising mechanism, whereby the incident light upon the CCD is blocked to perform only a read-out operation while data of all the pixels is read out from the CCD.
摘要翻译：具有行间CCD型的摄像机，作为数码相机具有功能。视频摄像机包括用于调节入射到CCD上的光量的虹膜机构，用于驱动虹膜机构的虹膜驱动电路，以及照相机微机，用于通过控制虹膜来控制由虹膜机构调节入射光量的操作驱动电路。相机微型计算机控制光圈驱动电路来驱动虹膜机构，由此CCD上的入射光被遮挡以仅执行读出操作，同时从CCD读出所有像素的数据。

3. 发明授权

US07800659B2 Camera and file management method used therein 有权
标题翻译：其中使用的相机和文件管理方法
公开(公告)号：US07800659B2
公开(公告)日：2010-09-21
申请号：US11976970
申请日：2007-10-30
申请人： Naoki Hanada
发明人： Naoki Hanada
IPC分类号： H04N5/76
CPC分类号： H04N5/77 , H04N5/23293 , H04N5/772 , H04N5/781 , H04N5/85 , H04N5/907 , H04N9/8042 , H04N9/8047 , H04N9/8211 , H04N9/8227
摘要： A recording medium has clusters assigned first cluster information pieces respectively. The clusters store a file or files of image data. When a received signal is a copying command indicative of a requested file, image data in the requested file is read from one or more clusters and is sent. Detection is made about a first cluster information piece or pieces assigned to the one or more clusters from which the image data is read. The detected first cluster information piece or pieces are labeled as a second cluster information piece or pieces. Identification is made about a first cluster information piece or pieces assigned to one or more clusters loaded with image data in the requested file. When the identified first cluster information piece or pieces are equal to the second cluster information piece or pieces, the requested file is recognized as a file which has been copied.
摘要翻译：记录介质具有分别分配有第一簇信息块的簇。集群存储图像数据的文件或文件。当接收到的信号是指示所请求的文件的复制命令时，从一个或多个簇读取所请求的文件中的图像数据，并发送。检测分配给读取图像数据的一个或多个簇的第一簇信息片段。检测到的第一簇信息片段被标记为第二簇信息片段。对于分配给所请求文件中加载有图像数据的一个或多个集群的第一个集群信息片段进行识别。当所识别的第一群集信息片段等于第二群集信息片段时，所请求的文件被识别为被复制的文件。

4. 发明授权

US5094967A Method for manufacturing semiconductor device having a non-volatile memory cell and logic regions by using a CVD second insulating film 失效
标题翻译：使用CVD第二绝缘膜制造具有非易失性存储单元和逻辑区域的半导体器件的方法
公开(公告)号：US5094967A
公开(公告)日：1992-03-10
申请号：US620701
申请日：1990-12-03
申请人： Kazuyoshi Shinada , Masayuki Yoshida , Takahide Mizutani , Naoki Hanada
发明人： Kazuyoshi Shinada , Masayuki Yoshida , Takahide Mizutani , Naoki Hanada
IPC分类号： H01L21/82 , H01L21/8234 , H01L21/8247 , H01L27/088 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11526 , H01L21/82 , H01L27/115 , H01L27/11539 , Y10S148/138
摘要： A method for manufacturing a semiconductor substrate device having a non-volatile memory cell region and a logic region including MOS transistors. A first insulating film and a first electrode layer are formed on a semiconductor substrate. Only those portions of the first insulating film and first electrode layer which are located in the logic region are removed, without removing those portions of the first insulating film and first electrode layer which are located in the non-volatile memory cell region. A sacrificial film is deposited for insulation over the entire surface of the memory cell region and logic region, and then a resist film is coated on the sacrificial film. Subsequently, impurity ions are implanted into a desired channel region located in the logic region. The resist film and sacrificial film are removed, and thereafter a second insulating film and a second electrode layer are formed.

5. 发明授权

US08815737B2 Method for forming NiSi film, method for forming silicide film, method for forming metal film for use in silicide-annealing, apparatus for vacuum processing and film-forming apparatus 有权
标题翻译：用于形成NiSi膜的方法，用于形成硅化物膜的方法，用于形成用于硅化物退火的金属膜的方法，真空处理装置和成膜装置
公开(公告)号：US08815737B2
公开(公告)日：2014-08-26
申请号：US13423946
申请日：2012-03-19
申请人： Yasushi Higuchi , Toshimitsu Uehigashi , Kazuhiro Sonoda , Harunori Ushikawa , Naoki Hanada
发明人： Yasushi Higuchi , Toshimitsu Uehigashi , Kazuhiro Sonoda , Harunori Ushikawa , Naoki Hanada
IPC分类号： H01L21/44 , H01L21/285 , C23C16/18 , C23C16/56 , H01L29/45
CPC分类号： H01L21/28518 , C23C16/18 , C23C16/56 , H01L21/28556 , H01L29/456
摘要： The method for the formation of a silicide film herein provided comprises the steps of forming an Ni film on the surface of a substrate mainly composed of Si and then heat-treating the resulting Ni film to thus form an NiSi film as an upper layer of the substrate, wherein, prior to the heat-treatment for the formation of the NiSi film, the Ni film is subjected to a preannealing treatment using H2 gas at a temperature which is less than the heat-treatment temperature and which never causes the formation of any NiSi film in order to remove any impurity present in the Ni film, and the resulting Ni film is then subjected to a silicide-annealing treatment to thus form the NiSi film.
摘要翻译：本文提供的形成硅化物膜的方法包括以下步骤：在主要由Si构成的衬底的表面上形成Ni膜，然后热处理所得到的Ni膜，从而形成NiSi膜作为上层基板，其中，在用于形成NiSi膜的热处理之前，使用H 2气体在低于热处理温度的温度下对Ni膜进行预退火处理，并且不会导致形成任何 NiSi膜以除去存在于Ni膜中的任何杂质，然后对所得的Ni膜进行硅化物退火处理，从而形成NiSi膜。

6. 发明授权

US5321287A Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip 失效
标题翻译：其中n沟道MOSFET，p沟道MOSFET和非易失性存储单元形成在一个芯片中的半导体器件
公开(公告)号：US5321287A
公开(公告)日：1994-06-14
申请号：US43533
申请日：1993-04-06
申请人： Teruo Uemura , Naoki Hanada
发明人： Teruo Uemura , Naoki Hanada
IPC分类号： H01L21/8247 , H01L27/092 , H01L27/105 , H01L27/02
CPC分类号： H01L27/11526 , H01L27/0928 , H01L27/105 , H01L27/11546
摘要： An n-channel MOSFET, a p-channel MOSFET and a nonvolatile memory cell are provided for the same semiconductor substrate. The nonvolatile memory cell is formed on the semiconductor substrate, the n-channel MOSFET is formed in a p-type well region of the semiconductor substrate, and the p-channel MOSFET is formed in an n-type well region of the semiconductor substrate.
摘要翻译：为相同的半导体衬底提供了n沟道MOSFET，p沟道MOSFET和非易失性存储单元。在半导体衬底上形成非易失性存储单元，在半导体衬底的p型阱区中形成n沟道MOSFET，并且在半导体衬底的n型阱区中形成p沟道MOSFET。

7. 发明授权

US08669191B2 Method for forming Ni film 有权
标题翻译：镍膜形成方法
公开(公告)号：US08669191B2
公开(公告)日：2014-03-11
申请号：US13445450
申请日：2012-04-12
申请人： Toshimitsu Uehigashi , Yasushi Higuchi , Michio Ishikawa , Harunori Ushikawa , Naoki Hanada
发明人： Toshimitsu Uehigashi , Yasushi Higuchi , Michio Ishikawa , Harunori Ushikawa , Naoki Hanada
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/18 , H01L21/28518 , H01L21/28556 , H01L21/28562
摘要： A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H2 gas and NH3 gas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280° C. and not higher than 350° C.
摘要翻译：本文公开了形成Ni膜的方法，其包括以下步骤：在真空室中将Si衬底的温度保持在期望的水平; 将真空室中的烷基酰胺化镍引入（在该有机金属化合物中，烷基是选自甲基，乙基，丁基和丙基的基团），H 2气和NH 3气 ; 然后根据CVD技术形成Ni膜，其中成膜温度设定在高于280℃且不高于350℃的水平。

8. 发明申请

US20130042712A1 GEAR MECHANISM 审中-公开
标题翻译：齿轮机构
公开(公告)号：US20130042712A1
公开(公告)日：2013-02-21
申请号：US13637542
申请日：2011-05-02
申请人： Seiji Hiroshima , Shinjiro Kuze , Makoto Takahashi , Naoki Hanada
发明人： Seiji Hiroshima , Shinjiro Kuze , Makoto Takahashi , Naoki Hanada
IPC分类号： F16H1/04
CPC分类号： F16H55/0886 , Y10T74/19679
摘要： A decelerating-side tooth surface of each tooth of a drive gear contacts a corresponding one of teeth of a driven gear to transmit torque when torque transmitted between the drive gear and the driven gear is maximum, and is formed as follows. The decelerating-side tooth surface protrudes toward the corresponding tooth of the driven gear and has a circular arc curvature to a facewidth direction of the corresponding tooth. The decelerating-side tooth surface is formed so that a center of the circular arc curvature is located apart in a facewidth direction of the tooth of the drive gear from a plane perpendicular to the facewidth direction in a middle in the facewidth direction toward an opposite side from a portion of the decelerating-side tooth surface that contacts the corresponding tooth of the driven gear at the time when the transmitted torque is maximum.
摘要翻译：当在驱动齿轮和从动齿轮之间传递的扭矩最大时，驱动齿轮的每个齿的减速侧齿表面与从动齿轮的相应的一个齿接触以传递转矩，并且如下形成。减速侧齿面朝向从动齿轮的相应齿突出，并且对应于相应齿的面宽方向具有圆弧曲率。减速侧齿面形成为使得圆弧曲率的中心在与驱动齿轮的齿的面宽方向上相对于面宽方向的平面在面宽方向的中间朝向相对侧分开从传动转矩最大时与从动齿轮的对应齿接触的减速侧齿面的一部分。

9. 发明申请

US20120264310A1 METHOD FOR FORMING NI FILM 有权
标题翻译：形成NI膜的方法
公开(公告)号：US20120264310A1
公开(公告)日：2012-10-18
申请号：US13445450
申请日：2012-04-12
申请人： Toshimitsu Uehigashi , Yasushi Higuchi , Michio Ishikawa , Harunori Ushikawa , Naoki Hanada
发明人： Toshimitsu Uehigashi , Yasushi Higuchi , Michio Ishikawa , Harunori Ushikawa , Naoki Hanada
IPC分类号： H01L21/31
CPC分类号： C23C16/18 , H01L21/28518 , H01L21/28556 , H01L21/28562
摘要： A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H2 gas and NH3 gas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280° C. and not higher than 350° C.
摘要翻译：本文公开了形成Ni膜的方法，其包括以下步骤：在真空室中将Si衬底的温度保持在期望的水平; 将真空室中的烷基酰胺化镍引入（在该有机金属化合物中，烷基是选自甲基，乙基，丁基和丙基的基团），H 2气和NH 3气 ; 然后根据CVD技术形成Ni膜，其中成膜温度设定在高于280℃且不高于350℃的水平。

10. 发明申请

US20080106617A1 Camera and file management method used therein 有权
标题翻译：其中使用的相机和文件管理方法
公开(公告)号：US20080106617A1
公开(公告)日：2008-05-08
申请号：US11976970
申请日：2007-10-30
申请人： Naoki Hanada
发明人： Naoki Hanada
IPC分类号： H04N5/76
CPC分类号： H04N5/77 , H04N5/23293 , H04N5/772 , H04N5/781 , H04N5/85 , H04N5/907 , H04N9/8042 , H04N9/8047 , H04N9/8211 , H04N9/8227
摘要： A recording medium has clusters assigned first cluster information pieces respectively. The clusters store a file or files of image data. When a received signal is a copying command indicative of a requested file, image data in the requested file is read from one or more clusters and is sent. Detection is made about a first cluster information piece or pieces assigned to the one or more clusters from which the image data is read. The detected first cluster information piece or pieces are labeled as a second cluster information piece or pieces. Identification is made about a first cluster information piece or pieces assigned to one or more clusters loaded with image data in the requested file. When the identified first cluster information piece or pieces are equal to the second cluster information piece or pieces, the requested file is recognized as a file which has been copied.
摘要翻译：记录介质具有分别分配有第一簇信息块的簇。集群存储图像数据的文件或文件。当接收到的信号是指示所请求的文件的复制命令时，从一个或多个簇读取所请求的文件中的图像数据，并发送。检测分配给读取图像数据的一个或多个簇的第一簇信息片段。检测到的第一簇信息片段被标记为第二簇信息片段。对于分配给所请求文件中加载有图像数据的一个或多个集群的第一个集群信息片段进行识别。当所识别的第一群集信息片段等于第二群集信息片段时，所请求的文件被识别为被复制的文件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式