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    • 1. 发明授权
    • Cu—Ni—Si—Co—Cr copper alloy for electronic materials and method for manufacturing same
    • 用于电子材料的Cu-Ni-Si-Co-Cr铜合金及其制造方法
    • US08070893B2
    • 2011-12-06
    • US11887660
    • 2006-03-31
    • Naohiko EraKazuhiko FukamachiHiroshi Kuwagaki
    • Naohiko EraKazuhiko FukamachiHiroshi Kuwagaki
    • C22C9/06C22F1/08
    • H01L23/49579C22C9/06C22F1/08H01L2924/0002H01L2924/00
    • The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5 -about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09 -about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm2, or Pc/P is equal to or less than about 0.3 wherein P is the number of inclusions dispersed in the alloy and having the size of 1 μm or more, and Pc is the number of inclusions, among those having the size of 1 μm or more, whose carbon concentration is 10% or more by weight.
    • 本发明提供了具有优异特性的电子材料的Cu-Ni-Si-Co-Cr铜合金,例如显着提高的强度和导电性。 一方面,本发明是用于电子材料的Cu-Ni-Si-Co-Cr铜合金,其包含约0.5-约2.5重量%的Ni,约0.5-约2.5重量%的Co,约0.30-约 1.2重量%的Si,约0.09〜0.5重量%的Cr,余量为Cu和不可避免的杂质,其中Ni和Co的总重量与合金组成中的Si的重量比满足 约4≦̸ [Ni + Co] / Si≦̸约5,合金组成中Ni与Co的比例满足下式:约0.5≦̸ Ni / Co≦̸约2,其中Pc等于或小于 大于约15/1000μm2,或Pc / P等于或小于约0.3,其中P是分散在合金中并且具有1μm或更大的尺寸的夹杂物的数量,Pc是夹杂物的数量,其中 其碳浓度为10重量%以上的尺寸为1μm以上。
    • 2. 发明申请
    • Cu-Ni-Si-Co-Cr Copper Alloy for Electronic Materials and Method for Manufacturing Same
    • 用于电子材料的Cu-Ni-Si-Co-Cr铜合金及其制造方法
    • US20090025840A1
    • 2009-01-29
    • US11887660
    • 2006-03-31
    • Naohiko EraKazuhiko FukamachiHiroshi Kuwagaki
    • Naohiko EraKazuhiko FukamachiHiroshi Kuwagaki
    • C22F1/08C22C9/06C22C9/02C22C9/04
    • H01L23/49579C22C9/06C22F1/08H01L2924/0002H01L2924/00
    • The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09-about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm2, or Pc/P is equal to or less than about 0.3 wherein P is the number of inclusions dispersed in the alloy and having the size of 1 μm or more, and Pc is the number of inclusions, among those having the size of 1 μm or more, whose carbon concentration is 10% or more by weight.
    • 本发明提供了具有优异特性的电子材料的Cu-Ni-Si-Co-Cr铜合金,例如显着提高的强度和导电性。 一方面,本发明是用于电子材料的Cu-Ni-Si-Co-Cr铜合金,其包含约0.5-约2.5重量%的Ni,约0.5-约2.5重量%的Co,约0.30-约 1.2重量%的Si和约0.09〜约0.5重量%的Cr,余量为Cu和不可避免的杂质,其中Ni和Co的总重量与合金组合物中的Si的重量比满足 式:约4 <= [Ni + Co] / Si <=约5,合金组成中Ni与Co的比例满足下式:约0.5 <= Ni / Co <= 2,其中Pc相等 或小于约15/1000mum2,或Pc / P等于或小于约0.3,其中P是分散在合金中并且具有1um或更大的尺寸的夹杂物的数量,Pc是夹杂物的数量 ,其中碳浓度为10重量%以上的大小为1μm以上的那些。
    • 6. 发明申请
    • Cu-Ni-Si-Co-Cr System Alloy for Electronic Materials
    • 用于电子材料的Cu-Ni-Si-Co-Cr系合金
    • US20110027122A1
    • 2011-02-03
    • US12935688
    • 2009-03-30
    • Naohiko EraHiroshi Kuwagaki
    • Naohiko EraHiroshi Kuwagaki
    • C22C9/06
    • C22C9/06C22C9/10C22F1/08H01L2924/0002H01L2924/00
    • The problem to be solved by the present invention is to provide a significant improvement in the properties in Cu—Ni—Co—Si alloy by adding Cr, i.e., to provide Corson alloys having high strength and high electrical conductivity. There is provided a copper alloy for electronic materials comprising 1.0 to 4.5 mass % of Ni, 0.50 to 1.2 mass % of Si, 0.1 to 2.5 mass % of Co, 0.003 to 0.3 mass % of Cr, with the balance being Cu and unavoidable impurities, the mass concentration ratio of the total mass of Ni and Co to Si ([Ni+Co]/Si ratio) satisfies the formula: 4≦[Ni+Co]/Si≦5, and with regard to Cr—Si compound whose size is 0.1 to 5 μm dispersed in the material, atomic concentration ratio of Cr to Si in the dispersed particle is 1-5, and area dispersion density thereof is more than 1×104/mm2, and not more than 1×106/mm2.
    • 通过本发明要解决的问题是通过添加Cr来提供Cu-Ni-Co-Si合金的性能的显着改进,即提供具有高强度和高导电性的科森合金。 提供了一种电子材料用铜合金,其含有1.0〜4.5质量%的Ni,0.50〜1.2质量%的Si,0.1〜2.5质量%的Co,0.003〜0.3质量%的Cr,余量为Cu和不可避免的杂质 ,Ni和Co对Si([Ni + Co] / Si比)的总质量的质量浓度比满足下式:4&nlE; [Ni + Co] / Si&nlE; 5,关于Cr-Si化合物 尺寸为0.1〜5μm,分散粒子中Cr与Si的原子浓度比为1-5,面积分散密度大于1×10 4 / mm 2,1×10 6 / mm 2以下 。
    • 7. 发明申请
    • CU-NI-SI-CO COPPER ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR MANUFACTURING SAME
    • 用于电子材料的CU-NI-SI-CO铜合金及其制造方法
    • US20090301614A1
    • 2009-12-10
    • US12312990
    • 2008-08-22
    • Naohiko EraHiroshi Kuwagaki
    • Naohiko EraHiroshi Kuwagaki
    • C22F1/08C22C9/06
    • C22C9/06B21B2003/005C22F1/08H01B1/026
    • The invention provides Cu—Ni—Si—Co alloys having excellent strength, electrical conductivity, and press-punching properties. In one aspect, the invention is a copper alloy for electronic materials, containing 1.0 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, and 0.30 to 1.2 mass % of Si, the balance being Cu and unavoidable impurities, wherein the copper alloy for electronic material has a [Ni+Co+Si] content in which the median value ρ (mass %) satisfies the formula 20 (mass %)≦ρ≦60 (mass %), the standard deviation σ (Ni+Co+Si) satisfies the formula σ (Ni+Co+Si)≦30 (mass %), and the surface area ratio S (%) satisfies the formula 1%≦S≦10%, in relation to the compositional variation and the surface area ratio of second-phase particles size of 0.1 μm or greater and 1 μm or less when observed in a cross section parallel to a rolling direction.
    • 本发明提供了具有优异的强度,导电性和冲压性能的Cu-Ni-Si-Co合金。 一方面,本发明是一种电子材料用铜合金,其含有1.0〜2.5质量%的Ni,0.5〜2.5质量%的Co,0.30〜1.2质量%的Si,余量为Cu和不可避免的杂质, 用于电子材料的铜合金具有其中中值rho(质量%)满足公式20(质量%)<= rho <= 60(质量%)的[Ni + Co + Si]含量,标准偏差σ + Co + Si)满足公式sigma(Ni + Co + Si)≤30(质量%),表面积比S(%)满足公式1%<= S <= 10% 当在与轧制方向平行的横截面中观察时,组成变化和第二相颗粒尺寸的表面积比为0.1μm或更大和1μm或更小。
    • 8. 发明授权
    • Cu—Ni—Si—Co copper alloy for electronic materials and method for manufacturing same
    • 用于电子材料的Cu-Ni-Si-Co铜合金及其制造方法
    • US08444779B2
    • 2013-05-21
    • US12312990
    • 2008-08-22
    • Naohiko EraHiroshi Kuwagaki
    • Naohiko EraHiroshi Kuwagaki
    • C22C9/06C22F1/08
    • C22C9/06B21B2003/005C22F1/08H01B1/026
    • The invention provides Cu—Ni—Si—Co alloys having excellent strength, electrical conductivity, and press-punching properties. In one aspect, the invention is a copper alloy for electronic materials, containing 1.0 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, and 0.30 to 1.2 mass % of Si, the balance being Cu and unavoidable impurities, wherein the copper alloy for electronic material has a [Ni+Co+Si] content in which the median value ρ (mass %) satisfies the formula 20 (mass %)≦ρ≦60 (mass %), the standard deviation σ (Ni+Co+Si) satisfies the formula σ (Ni+Co+Si)≦30 (mass %), and the surface area ratio S (%) satisfies the formula 1%≦S≦10%, in relation to the compositional variation and the surface area ratio of second-phase particles size of 0.1 μm or greater and 1 μm or less when observed in a cross section parallel to a rolling direction.
    • 本发明提供了具有优异的强度,导电性和冲压性能的Cu-Ni-Si-Co合金。 一方面,本发明是一种电子材料用铜合金,其含有1.0〜2.5质量%的Ni,0.5〜2.5质量%的Co,0.30〜1.2质量%的Si,余量为Cu和不可避免的杂质, 用于电子材料的铜合金具有其中中值rho(质量%)满足式20(质量%)@ 60(质量%),标准偏差σ(Ni + Co)的[Ni + Co + Si] + Si)满足公式sigma(Ni + Co + Si)≤30(质量%),表面积比S(%)满足公式1%@ S @ 10%,相对于组成变化和表面 当在与轧制方向平行的截面中观察时,第二相粒径的面积比为0.1μm以上且1μm以下。
    • 10. 发明申请
    • Cu-Ni-Si SYSTEM ALLOY FOR ELECTRONIC MATERIALS
    • Cu-Ni-Si系统合金电子材料
    • US20100086435A1
    • 2010-04-08
    • US12532929
    • 2008-03-28
    • Naohiko Era
    • Naohiko Era
    • C22C9/06
    • C22C9/06C22F1/00C22F1/02C22F1/08H01B1/026
    • An object of the present invention is to provide a Corson alloy having significantly improved characteristics, i.e. high strength and high electrical conductivity, by enhancing the effect of addition of Cr to a Cu—Ni—Si system alloy. There is provided a copper alloy for electronic materials comprising 1.0-4.5% by mass Ni, 0.50-1.2% by mass Si, 0.003-0.3% by mass Cr wherein the weight ratio of Ni to Si satisfies the expression: 3≦Ni/Si≦5.5, and the balance being Cu and incidental impurities, wherein particles of Cr—Si compounds having a size of 0.1 μm to 5 μm are dispersed in the alloy and the dispersed particles having an atomic concentration ratio of Cr to Si of 1 to 5 and a dispersion density of no more than 1×106/mm2.
    • 本发明的目的是通过增加对Cu-Ni-Si系合金添加Cr的作用,提供具有显着改善的特性,即高强度和高导电性的科森合金。 提供了一种电子材料用铜合金,其包含1.0-4.5质量%的Ni,0.50-1.2质量%的Si,0.003-0.3质量%的Cr,其中Ni与Si的重量比满足下式:3&nlE; Ni / Si& ; 5.5,余量为Cu和杂质,其中尺寸为0.1μm至5μm的Cr-Si化合物颗粒分散在合金中,原子浓度比Cr至Si的分散颗粒为1至5 分散密度不大于1×106 / mm2。