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1. 发明授权

US06602362B2 Copper-alloy foil to be used for suspension member of hard-disc drive 失效
标题翻译：铜合金箔用于硬盘驱动器的悬挂构件
公开(公告)号：US06602362B2
公开(公告)日：2003-08-05
申请号：US09805160
申请日：2001-03-14
申请人： Yasuo Tomioka , Tetsuo Maki , Naohiko Era
发明人： Yasuo Tomioka , Tetsuo Maki , Naohiko Era
IPC分类号： C22C906
CPC分类号： G11B5/4833 , H05K1/0393 , H05K1/056 , H05K1/09 , H05K2201/0355 , H05K2203/0278
摘要： Conductors, which are formed on a suspension member of the hard-disc drive suspension, are subject to thermal expansion and shrinkage during the laminating process with a substrate via a polyimide binder. The tracking width of the suspension member is influenced by the thermal expansion and shrinkage. In order to provide a copper-alloy foil, which can attain improved tracking width, the following ratio of thermal expansion and shrinkage is adjusted in a range of from −0.1 to +0.1% &Dgr;(%)=(l−l0)/l0×100 where l0 the length of a specimen before heating at 330° C. for 2 hours, and l is the length of a specimen after heating at 330° C. for 2 hours. &Dgr;(%) is measured in the direction parallel to the rolling direction.
摘要翻译：形成在硬盘驱动悬架的悬挂构件上的导体在与基板通过聚酰亚胺粘合剂层压工艺期间经受热膨胀和收缩。悬挂构件的跟踪宽度受热膨胀和收缩的影响。为了提供能够获得改善的跟踪宽度的铜合金箔，将以下热膨胀和收缩率调节在-0.1至+ 0.1％的范围内，其中在330℃下加热之前的样品的长度 C.2小时，l是在330℃下加热2小时后的样品的长度。在平行于轧制方向的方向上测量ΔTA（％）。

2. 发明申请

US20110027122A1 Cu-Ni-Si-Co-Cr System Alloy for Electronic Materials 审中-公开
标题翻译：用于电子材料的Cu-Ni-Si-Co-Cr系合金
公开(公告)号：US20110027122A1
公开(公告)日：2011-02-03
申请号：US12935688
申请日：2009-03-30
申请人： Naohiko Era , Hiroshi Kuwagaki
发明人： Naohiko Era , Hiroshi Kuwagaki
IPC分类号： C22C9/06
CPC分类号： C22C9/06 , C22C9/10 , C22F1/08 , H01L2924/0002 , H01L2924/00
摘要： The problem to be solved by the present invention is to provide a significant improvement in the properties in Cu—Ni—Co—Si alloy by adding Cr, i.e., to provide Corson alloys having high strength and high electrical conductivity. There is provided a copper alloy for electronic materials comprising 1.0 to 4.5 mass % of Ni, 0.50 to 1.2 mass % of Si, 0.1 to 2.5 mass % of Co, 0.003 to 0.3 mass % of Cr, with the balance being Cu and unavoidable impurities, the mass concentration ratio of the total mass of Ni and Co to Si ([Ni+Co]/Si ratio) satisfies the formula: 4≦[Ni+Co]/Si≦5, and with regard to Cr—Si compound whose size is 0.1 to 5 μm dispersed in the material, atomic concentration ratio of Cr to Si in the dispersed particle is 1-5, and area dispersion density thereof is more than 1×104/mm2, and not more than 1×106/mm2.
摘要翻译：通过本发明要解决的问题是通过添加Cr来提供Cu-Ni-Co-Si合金的性能的显着改进，即提供具有高强度和高导电性的科森合金。提供了一种电子材料用铜合金，其含有1.0〜4.5质量％的Ni，0.50〜1.2质量％的Si，0.1〜2.5质量％的Co，0.003〜0.3质量％的Cr，余量为Cu和不可避免的杂质，Ni和Co对Si（[Ni + Co] / Si比）的总质量的质量浓度比满足下式：4＆nlE; [Ni + Co] / Si＆nlE; 5，关于Cr-Si化合物尺寸为0.1〜5μm，分散粒子中Cr与Si的原子浓度比为1-5，面积分散密度大于1×10 4 / mm 2，1×10 6 / mm 2以下。

3. 发明申请

US20100086435A1 Cu-Ni-Si SYSTEM ALLOY FOR ELECTRONIC MATERIALS 审中-公开
标题翻译： Cu-Ni-Si系统合金电子材料
公开(公告)号：US20100086435A1
公开(公告)日：2010-04-08
申请号：US12532929
申请日：2008-03-28
申请人： Naohiko Era
发明人： Naohiko Era
IPC分类号： C22C9/06
CPC分类号： C22C9/06 , C22F1/00 , C22F1/02 , C22F1/08 , H01B1/026
摘要： An object of the present invention is to provide a Corson alloy having significantly improved characteristics, i.e. high strength and high electrical conductivity, by enhancing the effect of addition of Cr to a Cu—Ni—Si system alloy. There is provided a copper alloy for electronic materials comprising 1.0-4.5% by mass Ni, 0.50-1.2% by mass Si, 0.003-0.3% by mass Cr wherein the weight ratio of Ni to Si satisfies the expression: 3≦Ni/Si≦5.5, and the balance being Cu and incidental impurities, wherein particles of Cr—Si compounds having a size of 0.1 μm to 5 μm are dispersed in the alloy and the dispersed particles having an atomic concentration ratio of Cr to Si of 1 to 5 and a dispersion density of no more than 1×106/mm2.
摘要翻译：本发明的目的是通过增加对Cu-Ni-Si系合金添加Cr的作用，提供具有显着改善的特性，即高强度和高导电性的科森合金。提供了一种电子材料用铜合金，其包含1.0-4.5质量％的Ni，0.50-1.2质量％的Si，0.003-0.3质量％的Cr，其中Ni与Si的重量比满足下式：3＆nlE; Ni / Si＆ ; 5.5，余量为Cu和杂质，其中尺寸为0.1μm至5μm的Cr-Si化合物颗粒分散在合金中，原子浓度比Cr至Si的分散颗粒为1至5 分散密度不大于1×106 / mm2。

4. 发明授权

US08444779B2 Cu—Ni—Si—Co copper alloy for electronic materials and method for manufacturing same 有权
标题翻译：用于电子材料的Cu-Ni-Si-Co铜合金及其制造方法
公开(公告)号：US08444779B2
公开(公告)日：2013-05-21
申请号：US12312990
申请日：2008-08-22
申请人： Naohiko Era , Hiroshi Kuwagaki
发明人： Naohiko Era , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： C22C9/06 , B21B2003/005 , C22F1/08 , H01B1/026
摘要： The invention provides Cu—Ni—Si—Co alloys having excellent strength, electrical conductivity, and press-punching properties. In one aspect, the invention is a copper alloy for electronic materials, containing 1.0 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, and 0.30 to 1.2 mass % of Si, the balance being Cu and unavoidable impurities, wherein the copper alloy for electronic material has a [Ni+Co+Si] content in which the median value ρ (mass %) satisfies the formula 20 (mass %)≦ρ≦60 (mass %), the standard deviation σ (Ni+Co+Si) satisfies the formula σ (Ni+Co+Si)≦30 (mass %), and the surface area ratio S (%) satisfies the formula 1%≦S≦10%, in relation to the compositional variation and the surface area ratio of second-phase particles size of 0.1 μm or greater and 1 μm or less when observed in a cross section parallel to a rolling direction.
摘要翻译：本发明提供了具有优异的强度，导电性和冲压性能的Cu-Ni-Si-Co合金。一方面，本发明是一种电子材料用铜合金，其含有1.0〜2.5质量％的Ni，0.5〜2.5质量％的Co，0.30〜1.2质量％的Si，余量为Cu和不可避免的杂质，用于电子材料的铜合金具有其中中值rho（质量％）满足式20（质量％）@ 60（质量％），标准偏差σ（Ni + Co）的[Ni + Co + Si] + Si）满足公式sigma（Ni + Co + Si）≤30（质量％），表面积比S（％）满足公式1％@ S @ 10％，相对于组成变化和表面当在与轧制方向平行的截面中观察时，第二相粒径的面积比为0.1μm以上且1μm以下。

5. 发明申请

US20090035174A1 Copper Alloy for Electronic Materials 有权
标题翻译：铜合金电子材料
公开(公告)号：US20090035174A1
公开(公告)日：2009-02-05
申请号：US11886829
申请日：2006-03-23
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： C22C9/06 , C22F1/00 , C22F1/08 , H01R13/03
摘要： The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5≦Ni/Co≦about 2.
摘要翻译：本发明提供含有Co的Cu-Ni-Si合金，并且具有优异的强度和导电性。根据本发明的用于电子材料的铜合金包含约0.5-约2.5重量％的Ni，约0.5-约2.5重量％的Co，约0.30-约1.2重量％的Si，余量为Cu 和不可避免的杂质，其中Ni和Co的总重量与Si（[Ni + Co] / Si比）的重量比满足下式：约4 <= [Ni + Co] / Si <=约5，并且Ni与Co的比例（Ni / Co比）满足下式：约0.5≤Ni/Co≤2。

6. 发明授权

US08317948B2 Copper alloy for electronic materials 有权
标题翻译：铜合金电子材料
公开(公告)号：US08317948B2
公开(公告)日：2012-11-27
申请号：US11886829
申请日：2006-03-23
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： C22C9/06 , C22F1/00 , C22F1/08 , H01R13/03
摘要： The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5≦Ni/Co≦about 2.
摘要翻译：本发明提供含有Co的Cu-Ni-Si合金，并且具有优异的强度和导电性。根据本发明的用于电子材料的铜合金包含约0.5-约2.5重量％的Ni，约0.5-约2.5重量％的Co，约0.30-约1.2重量％的Si，余量为Cu 和不可避免的杂质，其中Ni和Co的总重量与Si（[Ni + Co] / Si比率）的重量比满足下式：约4＆nlE; [Ni + Co] / Si＆nlE;约5， Ni与Co的比例（Ni / Co比）满足公式：约0.5＆nlE; Ni / Co＆nlE;约2。

7. 发明申请

US20090301614A1 CU-NI-SI-CO COPPER ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：用于电子材料的CU-NI-SI-CO铜合金及其制造方法
公开(公告)号：US20090301614A1
公开(公告)日：2009-12-10
申请号：US12312990
申请日：2008-08-22
申请人： Naohiko Era , Hiroshi Kuwagaki
发明人： Naohiko Era , Hiroshi Kuwagaki
IPC分类号： C22F1/08 , C22C9/06
CPC分类号： C22C9/06 , B21B2003/005 , C22F1/08 , H01B1/026
摘要： The invention provides Cu—Ni—Si—Co alloys having excellent strength, electrical conductivity, and press-punching properties. In one aspect, the invention is a copper alloy for electronic materials, containing 1.0 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, and 0.30 to 1.2 mass % of Si, the balance being Cu and unavoidable impurities, wherein the copper alloy for electronic material has a [Ni+Co+Si] content in which the median value ρ (mass %) satisfies the formula 20 (mass %)≦ρ≦60 (mass %), the standard deviation σ (Ni+Co+Si) satisfies the formula σ (Ni+Co+Si)≦30 (mass %), and the surface area ratio S (%) satisfies the formula 1%≦S≦10%, in relation to the compositional variation and the surface area ratio of second-phase particles size of 0.1 μm or greater and 1 μm or less when observed in a cross section parallel to a rolling direction.
摘要翻译：本发明提供了具有优异的强度，导电性和冲压性能的Cu-Ni-Si-Co合金。一方面，本发明是一种电子材料用铜合金，其含有1.0〜2.5质量％的Ni，0.5〜2.5质量％的Co，0.30〜1.2质量％的Si，余量为Cu和不可避免的杂质，用于电子材料的铜合金具有其中中值rho（质量％）满足公式20（质量％）<= rho <= 60（质量％）的[Ni + Co + Si]含量，标准偏差σ + Co + Si）满足公式sigma（Ni + Co + Si）≤30（质量％），表面积比S（％）满足公式1％<= S <= 10％当在与轧制方向平行的横截面中观察时，组成变化和第二相颗粒尺寸的表面积比为0.1μm或更大和1μm或更小。

8. 发明申请

US20080175746A1 Cu-Ni-Si system copper alloy for electronic materials 审中-公开
标题翻译： Cu-Ni-Si系统铜合金电子材料
公开(公告)号：US20080175746A1
公开(公告)日：2008-07-24
申请号：US11654864
申请日：2007-01-18
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22C9/06
CPC分类号： C22C9/06 , C22C1/02
摘要： The present invention provides Corson alloy having remarkably improved properties, in particular, by bringing out the effect of added Cr more efficiently. A copper alloy for electronic materials comprising 2.5-4.5% by mass of Ni; 0.50-1.2% by mass of Si; 0.0030-0.2% by mass of Cr; balance Cu and inevitable impurities, wherein the weight ratio of Ni to Si is in the range of 3 to 7 and the content of carbon is 50 ppm by mass or less is provided.
摘要翻译：本发明提供了具有显着提高的性能的Corson合金，特别是通过更有效地产生添加的Cr的作用。一种电子材料用铜合金，含有2.5〜4.5质量％的Ni; 0.50-1.2质量％的Si; 0.0030-0.2质量％的Cr; 平衡Cu和不可避免的杂质，其中Ni与Si的重量比在3至7的范围内，并且碳的含量为50质量ppm以下。

9. 发明授权

US08070893B2 Cu—Ni—Si—Co—Cr copper alloy for electronic materials and method for manufacturing same 有权
标题翻译：用于电子材料的Cu-Ni-Si-Co-Cr铜合金及其制造方法
公开(公告)号：US08070893B2
公开(公告)日：2011-12-06
申请号：US11887660
申请日：2006-03-31
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： H01L23/49579 , C22C9/06 , C22F1/08 , H01L2924/0002 , H01L2924/00
摘要： The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5 -about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09 -about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm2, or Pc/P is equal to or less than about 0.3 wherein P is the number of inclusions dispersed in the alloy and having the size of 1 μm or more, and Pc is the number of inclusions, among those having the size of 1 μm or more, whose carbon concentration is 10% or more by weight.
摘要翻译：本发明提供了具有优异特性的电子材料的Cu-Ni-Si-Co-Cr铜合金，例如显着提高的强度和导电性。一方面，本发明是用于电子材料的Cu-Ni-Si-Co-Cr铜合金，其包含约0.5-约2.5重量％的Ni，约0.5-约2.5重量％的Co，约0.30-约 1.2重量％的Si，约0.09〜0.5重量％的Cr，余量为Cu和不可避免的杂质，其中Ni和Co的总重量与合金组成中的Si的重量比满足约4＆nlE; [Ni + Co] / Si＆nlE;约5，合金组成中Ni与Co的比例满足下式：约0.5＆nlE; Ni / Co＆nlE;约2，其中Pc等于或小于大于约15/1000μm2，或Pc / P等于或小于约0.3，其中P是分散在合金中并且具有1μm或更大的尺寸的夹杂物的数量，Pc是夹杂物的数量，其中其碳浓度为10重量％以上的尺寸为1μm以上。

10. 发明申请

US20090025840A1 Cu-Ni-Si-Co-Cr Copper Alloy for Electronic Materials and Method for Manufacturing Same 有权
标题翻译：用于电子材料的Cu-Ni-Si-Co-Cr铜合金及其制造方法
公开(公告)号：US20090025840A1
公开(公告)日：2009-01-29
申请号：US11887660
申请日：2006-03-31
申请人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
发明人： Naohiko Era , Kazuhiko Fukamachi , Hiroshi Kuwagaki
IPC分类号： C22F1/08 , C22C9/06 , C22C9/02 , C22C9/04
CPC分类号： H01L23/49579 , C22C9/06 , C22F1/08 , H01L2924/0002 , H01L2924/00
摘要： The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09-about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm2, or Pc/P is equal to or less than about 0.3 wherein P is the number of inclusions dispersed in the alloy and having the size of 1 μm or more, and Pc is the number of inclusions, among those having the size of 1 μm or more, whose carbon concentration is 10% or more by weight.
摘要翻译：本发明提供了具有优异特性的电子材料的Cu-Ni-Si-Co-Cr铜合金，例如显着提高的强度和导电性。一方面，本发明是用于电子材料的Cu-Ni-Si-Co-Cr铜合金，其包含约0.5-约2.5重量％的Ni，约0.5-约2.5重量％的Co，约0.30-约 1.2重量％的Si和约0.09〜约0.5重量％的Cr，余量为Cu和不可避免的杂质，其中Ni和Co的总重量与合金组合物中的Si的重量比满足式：约4 <= [Ni + Co] / Si <=约5，合金组成中Ni与Co的比例满足下式：约0.5 <= Ni / Co <= 2，其中Pc相等或小于约15/1000mum2，或Pc / P等于或小于约0.3，其中P是分散在合金中并且具有1um或更大的尺寸的夹杂物的数量，Pc是夹杂物的数量，其中碳浓度为10重量％以上的大小为1μm以上的那些。

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