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1. 发明授权

US08009456B2 Resistance change type memory 有权
标题翻译：电阻变化型存储器
公开(公告)号：US08009456B2
公开(公告)日：2011-08-30
申请号：US12350477
申请日：2009-01-08
申请人： Naoharu Shimomura , Yoshiaki Asao
发明人： Naoharu Shimomura , Yoshiaki Asao
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/1657 , G11C11/1659 , G11C11/1675 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0023 , G11C13/0028 , G11C13/003 , G11C2013/0078 , G11C2213/32 , G11C2213/34 , G11C2213/72 , G11C2213/74
摘要： A resistance change type memory includes first, second and third drive lines, a resistance change element having one end connected to the third drive line, a first diode having an anode connected to the first drive line and a cathode connected to other end of the first resistance change element, a second diode having an anode connected to other end of the first resistance change element and a cathode connected to the second drive line, and a driver/sinker which supplies a write current to the resistance change element. A write control circuit is arranged such that when first data is written, the write current is caused to flow in a direction from the first drive line to the third drive line, and when second data is written, the write current is caused to flow in a direction from the third drive line to the second drive line.
摘要翻译：电阻变化型存储器包括第一，第二和第三驱动线，电阻改变元件，其一端连接到第三驱动线，第一二极管，具有连接到第一驱动线的阳极和连接到第一驱动线的另一端的阴极电阻变化元件，具有连接到第一电阻变化元件的另一端的阳极和连接到第二驱动线的阴极的第二二极管，以及向电阻变化元件提供写入电流的驱动器/沉降片。写控制电路被布置成使得当第一数据被写入时，使写入电流在从第一驱动线到第三驱动线的方向上流动，并且当写入第二数据时，使写入电流流入从第三驱动线到第二驱动线的方向。

2. 发明授权

US09343129B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US09343129B2
公开(公告)日：2016-05-17
申请号：US13719896
申请日：2012-12-19
申请人： Naoharu Shimomura
发明人： Naoharu Shimomura
IPC分类号： G11C11/00 , G11C11/16 , G11C11/02
CPC分类号： G11C11/16 , G11C11/02 , G11C11/161
摘要： A magnetic memory according to an embodiment includes: a first MTJ element including a first storage layer including a first magnetic film having a changeable magnetization direction, a first reference layer including a second magnetic film having a fixed magnetization direction, and a first tunnel barrier layer provided therebetween; and a second MTJ element including a second storage layer including a third magnetic film having a changeable magnetization direction and magnetically connected to the first storage layer, a second reference layer including a fourth magnetic film having a fixed magnetization direction parallel to the magnetization direction of the first reference layer, and a second tunnel barrier layer provided therebetween, the second MTJ element being arranged in parallel with the first MTJ element in a direction perpendicular to a stacking direction of the first MTJ element.
摘要翻译：根据实施例的磁存储器包括：第一MTJ元件，包括第一存储层，包括具有可变磁化方向的第一磁性膜，第一参考层，包括具有固定的磁化方向的第二磁性膜，以及第一隧道势垒层设置在其间; 以及第二MTJ元件，包括第二存储层，其包括具有可变磁化方向的第三磁性膜，并且磁性地连接到第一存储层;第二参考层，包括具有与第一存储层的磁化方向平行的固定磁化方向的第四磁性膜第一参考层和设置在其间的第二隧道势垒层，第二MTJ元件在垂直于第一MTJ元件的层叠方向的方向上与第一MTJ元件平行地布置。

3. 发明授权

US08472242B2 Magnetoresistive effect memory 有权
标题翻译：磁阻效应记忆
公开(公告)号：US08472242B2
公开(公告)日：2013-06-25
申请号：US12748785
申请日：2010-03-29
申请人： Naoharu Shimomura , Eiji Kitagawa , Sumio Ikegawa , Yoshihisa Iwata
发明人： Naoharu Shimomura , Eiji Kitagawa , Sumio Ikegawa , Yoshihisa Iwata
IPC分类号： G11C11/14
CPC分类号： G11C11/1673 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1693
摘要： A magnetoresistive effect memory of an aspect of the present invention including a magnetoresistive effect element including a first magnetic layer having an invariable magnetization direction, a second magnetic layer having a variable magnetization direction, and an interlayer provided between the first magnetic layer and the second magnetic layer, and a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to read data stored in the magnetoresistive effect element, wherein the pulse width of the read current is shorter than a period from an initial state to a cooperative coherent precession movement of magnetizations included in the second magnetic layer.
摘要翻译：本发明的磁阻效应存储器包括磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层，以及设置在第一磁性层和第二磁性层之间的中间层以及读取电路，其使脉冲形读取电流通过磁阻效应元件以读取存储在磁阻效应元件中的数据，其中读取电流的脉冲宽度短于从初始状态到协作相干的周期包括在第二磁性层中的磁化的进动运动。

4. 发明授权

US08223533B2 Magnetoresistive effect device and magnetic memory 有权
标题翻译：磁阻效应器和磁记忆体
公开(公告)号：US08223533B2
公开(公告)日：2012-07-17
申请号：US12556883
申请日：2009-09-10
申请人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
发明人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/5607 , H01F10/123 , H01F10/3254 , H01F10/3277 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.
摘要翻译：磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

5. 发明授权

US08208292B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08208292B2
公开(公告)日：2012-06-26
申请号：US13342324
申请日：2012-01-03
申请人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

6. 发明授权

US07633795B2 Magnetoresistive random access memory and its write control method 有权
标题翻译：磁阻随机存取存储器及其写控制方法
公开(公告)号：US07633795B2
公开(公告)日：2009-12-15
申请号：US11533622
申请日：2006-09-20
申请人： Naoharu Shimomura , Tatsuya Kishi , Ryousuke Takizawa
发明人： Naoharu Shimomura , Tatsuya Kishi , Ryousuke Takizawa
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A write control method for a magnetoresistive random access memory, which includes a memory cell having a recording layer with an axis of easy magnetization and an axis of hard magnetization. The write control method includes writing a datum into the memory cell. The writing of the datum includes applying a pulsative first magnetic field substantially parallel to the axis of easy magnetization of the recording layer and a pulsative second magnetic field substantially parallel to the axis of hard magnetization to the recording layer so as to cause a period of the pulsative first magnetic field and a period of the pulsative second magnetic field to overlap each other, and applying a pulsative third magnetic field having substantially the same direction as the pulsative first magnetic field to the recording layer at least once after applying the pulsative first magnetic field to the recording layer.
摘要翻译：一种用于磁阻随机存取存储器的写入控制方法，其包括具有易磁化轴和硬磁化轴的记录层的存储单元。写入控制方法包括将数据写入存储单元。数据的写入包括将基本上平行于记录层易磁化轴的脉动第一磁场和基本上平行于硬磁化轴的脉动第二磁场施加到记录层，从而使得脉动第一磁场和脉动第二磁场的周期彼此重叠，并且在施加脉动第一磁场之后，至少将一个具有与脉动第一磁场基本相同的方向的脉冲第三磁场施加到记录层上至少一次到记录层。

7. 发明申请

US20120099369A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120099369A1
公开(公告)日：2012-04-26
申请号：US13342324
申请日：2012-01-03
申请人： Tadashi KAI , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi KAI , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/02 , H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

8. 发明授权

US08107281B2 Magnetoresistive element and magnetic memory 有权
公开(公告)号：US08107281B2
公开(公告)日：2012-01-31
申请号：US12879544
申请日：2010-09-10
申请人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

9. 发明申请

US20070159875A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY AND ITS WRITE CONTROL METHOD 有权
标题翻译：磁性随机访问存储器及其写控制方法
公开(公告)号：US20070159875A1
公开(公告)日：2007-07-12
申请号：US11533622
申请日：2006-09-20
申请人： Naoharu Shimomura , Tatsuya Kishi , Ryousuke Takizawa
发明人： Naoharu Shimomura , Tatsuya Kishi , Ryousuke Takizawa
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： It is made possible to prevent the recording layer in the TMR element from assuming the intermediate state as perfectly as possible even if writing into the MRAM is conducted, as heretofore described. A write control method for a magnetoresistive random access memory including: applying a pulsative first magnetic field substantially parallel to the axis of easy magnetization of the recording layer and a pulsative second magnetic field substantially parallel to the axis of hard magnetization to the recording layer so as to cause a period of the pulsative first magnetic field and a period of the pulsative second magnetic field to overlap each other; and applying a pulsative third magnetic field having substantially the same direction as the pulsative first magnetic field to the recording layer at least once after applying the pulsative first magnetic field to the recording layer.
摘要翻译：如前所述，可以防止TMR元件中的记录层尽可能完美地呈现中间状态，即使进行MRAM的写入也是如此。一种用于磁阻随机存取存储器的写控制方法，包括：将基本上平行于记录层容易磁化轴的脉动第一磁场和基本上平行于硬磁化轴的脉动第二磁场施加到记录层，以便导致脉动第一磁场的周期和脉动第二磁场的周期彼此重叠; 以及在向所述记录层施加所述脉动的第一磁场之后，至少将一个具有与所述脉动第一磁场基本相同的方向的脉动第三磁场施加到所述记录层。

10. 发明授权

US06836319B2 Optical system adjusting method for energy beam apparatus 有权
标题翻译：能量束装置的光学系统调整方法
公开(公告)号：US06836319B2
公开(公告)日：2004-12-28
申请号：US10819201
申请日：2004-04-07
申请人： Munehiro Ogasawara , Jun Takamatsu , Hitoshi Sunaoshi , Naoharu Shimomura
发明人： Munehiro Ogasawara , Jun Takamatsu , Hitoshi Sunaoshi , Naoharu Shimomura
IPC分类号： G01J100
CPC分类号： H01J37/304 , H01J2237/30433 , H01J2237/3175
摘要： A method for adjusting an optical system of an energy beam apparatus by using a mark signal that is obtained by one-dimensionally or two-dimensionally scanning a mark on a sample with an energy beam. The mark has a one-dimensional or two-dimensional periodic structure. A first mark signal is detected by scanning the mark with a beam. The mark is set on the optical axis of the optical system. A second mark signal is detected by scanning the mark with a beam. The mark is located at a position that is deviated from the optical axis. A deviation of a deflection position is determined based on a phase difference between the first and second mark signals.
摘要翻译：一种能量束装置的光学系统的调整方法，该方法是利用能量束对样品上的标记进行二维或二维扫描而得到的标记信号。标记具有一维或二维周期性结构。通过用光束扫描标记来检测第一标记信号。标记设置在光学系统的光轴上。通过用光束扫描标记来检测第二标记信号。标记位于偏离光轴的位置。基于第一和第二标记信号之间的相位差来确定偏转位置的偏差。

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