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1. 发明授权

US07633795B2 Magnetoresistive random access memory and its write control method 有权
标题翻译：磁阻随机存取存储器及其写控制方法
公开(公告)号：US07633795B2
公开(公告)日：2009-12-15
申请号：US11533622
申请日：2006-09-20
申请人： Naoharu Shimomura , Tatsuya Kishi , Ryousuke Takizawa
发明人： Naoharu Shimomura , Tatsuya Kishi , Ryousuke Takizawa
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A write control method for a magnetoresistive random access memory, which includes a memory cell having a recording layer with an axis of easy magnetization and an axis of hard magnetization. The write control method includes writing a datum into the memory cell. The writing of the datum includes applying a pulsative first magnetic field substantially parallel to the axis of easy magnetization of the recording layer and a pulsative second magnetic field substantially parallel to the axis of hard magnetization to the recording layer so as to cause a period of the pulsative first magnetic field and a period of the pulsative second magnetic field to overlap each other, and applying a pulsative third magnetic field having substantially the same direction as the pulsative first magnetic field to the recording layer at least once after applying the pulsative first magnetic field to the recording layer.
摘要翻译：一种用于磁阻随机存取存储器的写入控制方法，其包括具有易磁化轴和硬磁化轴的记录层的存储单元。写入控制方法包括将数据写入存储单元。数据的写入包括将基本上平行于记录层易磁化轴的脉动第一磁场和基本上平行于硬磁化轴的脉动第二磁场施加到记录层，从而使得脉动第一磁场和脉动第二磁场的周期彼此重叠，并且在施加脉动第一磁场之后，至少将一个具有与脉动第一磁场基本相同的方向的脉冲第三磁场施加到记录层上至少一次到记录层。

2. 发明申请

US20070159875A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY AND ITS WRITE CONTROL METHOD 有权
标题翻译：磁性随机访问存储器及其写控制方法
公开(公告)号：US20070159875A1
公开(公告)日：2007-07-12
申请号：US11533622
申请日：2006-09-20
申请人： Naoharu Shimomura , Tatsuya Kishi , Ryousuke Takizawa
发明人： Naoharu Shimomura , Tatsuya Kishi , Ryousuke Takizawa
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： It is made possible to prevent the recording layer in the TMR element from assuming the intermediate state as perfectly as possible even if writing into the MRAM is conducted, as heretofore described. A write control method for a magnetoresistive random access memory including: applying a pulsative first magnetic field substantially parallel to the axis of easy magnetization of the recording layer and a pulsative second magnetic field substantially parallel to the axis of hard magnetization to the recording layer so as to cause a period of the pulsative first magnetic field and a period of the pulsative second magnetic field to overlap each other; and applying a pulsative third magnetic field having substantially the same direction as the pulsative first magnetic field to the recording layer at least once after applying the pulsative first magnetic field to the recording layer.
摘要翻译：如前所述，可以防止TMR元件中的记录层尽可能完美地呈现中间状态，即使进行MRAM的写入也是如此。一种用于磁阻随机存取存储器的写控制方法，包括：将基本上平行于记录层容易磁化轴的脉动第一磁场和基本上平行于硬磁化轴的脉动第二磁场施加到记录层，以便导致脉动第一磁场的周期和脉动第二磁场的周期彼此重叠; 以及在向所述记录层施加所述脉动的第一磁场之后，至少将一个具有与所述脉动第一磁场基本相同的方向的脉动第三磁场施加到所述记录层。

3. 发明授权

US08223533B2 Magnetoresistive effect device and magnetic memory 有权
标题翻译：磁阻效应器和磁记忆体
公开(公告)号：US08223533B2
公开(公告)日：2012-07-17
申请号：US12556883
申请日：2009-09-10
申请人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
发明人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/5607 , H01F10/123 , H01F10/3254 , H01F10/3277 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.
摘要翻译：磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

4. 发明申请

US20120241884A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20120241884A1
公开(公告)日：2012-09-27
申请号：US13432486
申请日：2012-03-28
申请人： Hisanori AIKAWA , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
发明人： Hisanori AIKAWA , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： According to one embodiment, a magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.
摘要翻译：根据一个实施例，磁存储器包括磁阻元件。磁阻元件包括具有不变磁化方向的参考层，具有可变磁化方向的存储层和设置在参考层和存储层之间的间隔层。存储层具有包括第一和第二磁性层的多层结构，第二磁性层设置在第一磁性层和间隔层之间，其磁各向异性能量低于第一磁性层的磁各向异性能，交换耦合常数Jex 第一磁性层和第二磁性层之间的距离不大于5erg / cm2。

5. 发明授权

US08530987B2 Magnetic memory including a magnetoresistive element 有权
标题翻译：磁存储器包括磁阻元件
公开(公告)号：US08530987B2
公开(公告)日：2013-09-10
申请号：US13432486
申请日：2012-03-28
申请人： Hisanori Aikawa , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
发明人： Hisanori Aikawa , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： A magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.
摘要翻译：磁存储器包括磁阻元件。磁阻元件包括具有不变磁化方向的参考层，具有可变磁化方向的存储层和设置在参考层和存储层之间的间隔层。存储层具有包括第一和第二磁性层的多层结构，第二磁性层设置在第一磁性层和间隔层之间，其磁各向异性能量低于第一磁性层的磁各向异性能，交换耦合常数Jex 第一磁性层和第二磁性层之间的距离不大于5erg / cm2。

6. 发明授权

US08716818B2 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US08716818B2
公开(公告)日：2014-05-06
申请号：US13428465
申请日：2012-03-23
申请人： Masatoshi Yoshikawa , Satoshi Seto , Hideaki Harakawa , Jyunichi Ozeki , Tatsuya Kishi , Keiji Hosotani
发明人： Masatoshi Yoshikawa , Satoshi Seto , Hideaki Harakawa , Jyunichi Ozeki , Tatsuya Kishi , Keiji Hosotani
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.
摘要翻译：根据一个实施例，磁阻元件包括具有可变和垂直磁化的存储层，存储层上的隧道势垒层，在隧道势垒层上具有不变和垂直磁化的参考层，参考上的硬掩模层层和在参考层和硬掩模层的侧壁上的侧壁间隔层。参考层的面内尺寸小于存储层的面内尺寸。存储层和参考层的面内尺寸之差为2nm以下。侧壁间隔层包括选自金刚石，DLC，BN，SiC，B4C，Al2O3和AlN的材料。

7. 发明申请

US20130001652A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US20130001652A1
公开(公告)日：2013-01-03
申请号：US13428465
申请日：2012-03-23
申请人： Masatoshi Yoshikawa , Satoshi Seto , Hideaki Harakawa , Jyunichi Ozeki , Tatsuya Kishi , Keiji Hosotani
发明人： Masatoshi Yoshikawa , Satoshi Seto , Hideaki Harakawa , Jyunichi Ozeki , Tatsuya Kishi , Keiji Hosotani
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.
摘要翻译：根据一个实施例，磁阻元件包括具有可变和垂直磁化的存储层，存储层上的隧道势垒层，在隧道势垒层上具有不变和垂直磁化的参考层，参考上的硬掩模层层和在参考层和硬掩模层的侧壁上的侧壁间隔层。参考层的面内尺寸小于存储层的面内尺寸。存储层和参考层的面内尺寸之差为2nm以下。侧壁间隔层包括选自金刚石，DLC，BN，SiC，B4C，Al2O3和AlN的材料。

8. 发明授权

US08279663B2 Magnetoresistance effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US08279663B2
公开(公告)日：2012-10-02
申请号：US13184976
申请日：2011-07-18
申请人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Hiroaki Yoda , Tatsuya Kishi
发明人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Hiroaki Yoda , Tatsuya Kishi
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/226
摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.
摘要翻译：磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 第三铁磁层，其设置在所述第二铁磁层的与所述第一非磁性层相反的一侧上，并且具有与所述膜平面平行的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

9. 发明授权

US08139405B2 Magnetoresistive element and magnetoresistive random access memory including the same 有权
标题翻译：磁阻元件和包括其的磁阻随机存取存储器
公开(公告)号：US08139405B2
公开(公告)日：2012-03-20
申请号：US13101818
申请日：2011-05-05
申请人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
发明人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
摘要翻译：本发明提供一种自旋注入型的低电阻磁阻元件。形成促进结晶的结晶促进层与具有非晶结构的界面磁性层接触，从而从隧道势垒层的侧面促进结晶化，并且调整隧道势垒层与界面磁性层之间的界面。通过这种布置，可以形成具有低电阻以获得期望电流值并且具有高TMR比的磁阻元件。

10. 发明授权

US08139403B2 Spin memory and spin transistor 有权
标题翻译：旋转记忆和自旋晶体管
公开(公告)号：US08139403B2
公开(公告)日：2012-03-20
申请号：US12885833
申请日：2010-09-20
申请人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Hisanori Aikawa , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Hisanori Aikawa , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
IPC分类号： G11C11/15 , G11C29/82
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1697 , H01L27/224 , H01L43/08
摘要： Certain embodiments provide a spin memory including a memory cell including a ferromagnetic stacked film that has a stacked structure in which a first ferromagnetic layer, a first nonmagnetic layer, a second ferromagnetic layer, a second nonmagnetic layer, and a third ferromagnetic layer are stacked in this order or reverse order, the third ferromagnetic layer and the second ferromagnetic layer being antiferromagnetically exchange-coupled via the second nonmagnetic layer. The ferromagnetic stacked film includes a current path in which a first and second write currents flow from the first ferromagnetic layer to the third ferromagnetic layer to write a first and second magnetization states into the first ferromagnetic layer respectively, and the second write current is higher than the first write current.
摘要翻译：某些实施例提供一种自旋存储器，其包括一个存储单元，该存储单元包括一个具有层叠结构的铁磁层叠膜，其中第一铁磁层，第一非磁性层，第二铁磁层，第二非磁性层和第三铁磁层堆叠在其中该顺序或反向顺序，第三铁磁层和第二铁磁层经由第二非磁性层反铁磁交换耦合。铁磁层叠膜包括电流路径，其中第一和第二写入电流从第一铁磁层流向第三铁磁层，以将第一和第二磁化状态分别写入第一铁磁层，并且第二写入电流高于第一次写入电流。

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