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1. 发明授权

US5888881A Method of trench isolation during the formation of a semiconductor device 失效
标题翻译：在形成半导体器件期间沟槽隔离的方法
公开(公告)号：US5888881A
公开(公告)日：1999-03-30
申请号：US566332
申请日：1995-12-01
申请人： Nanseng Jeng , Thomas Figura
发明人： Nanseng Jeng , Thomas Figura
IPC分类号： H01L21/762 , H01L21/763 , H01L21/76
CPC分类号： H01L21/763 , H01L21/76205 , H01L21/76227 , Y10S148/05
摘要： A process for fabricating a recessed field oxide area comprises providing a substrate having isolation stacks and first and second recesses having openings therein, the first recesses being wider than the second recesses. The recesses can have a depth in the approximate range of 200.ANG.-3000.ANG.. Next, the first and second recesses are lined with nitride, and the substrate is blanketed with a conformal material which bridges the openings of the second recesses but not the openings of the first recesses. The conformal material and the nitride is removed from horizontal surfaces of the isolation stacks, and essentially all of the conformal material is removed from the first recesses. At least a portion of the conformal material is left in the second recesses. Subsequent to the step of removing the conformal material, the substrate and the conformal material is oxidized to create field oxide areas at the first and second recesses.
摘要翻译：用于制造凹陷场氧化物区域的方法包括提供具有隔离堆叠的衬底以及在其中具有开口的第一和第二凹部，第一凹部比第二凹部宽。这些凹槽的深度可以在大约200 ANGSTROM -3000 ANGSTROM的范围内。接下来，第一凹槽和第二凹槽内衬有氮化物，并且衬底被覆盖着搭配第二凹槽而不是第一凹槽的开口的共形材料。保形材料和氮化物从隔离堆叠的水平表面移除，并且基本上所有的共形材料都从第一凹槽移除。保形材料的至少一部分留在第二凹槽中。在去除保形材料的步骤之后，将衬底和保形材料氧化以在第一和第二凹部处产生场氧化物区域。

2. 发明申请

US20050012158A1 Locos trench isolation structure 审中-公开
标题翻译： Locos沟槽隔离结构
公开(公告)号：US20050012158A1
公开(公告)日：2005-01-20
申请号：US10899609
申请日：2004-07-27
申请人： Fernando Gonzalez , Mike Violette , Nanseng Jeng , Aftab Ahmad , Klaus Schuegraf
发明人： Fernando Gonzalez , Mike Violette , Nanseng Jeng , Aftab Ahmad , Klaus Schuegraf
IPC分类号： H01L21/762 , H01L29/76
CPC分类号： H01L21/76202 , H01L21/76221 , Y10S148/05
摘要： A semiconductor structure pad oxide layer is enlarged by local oxidation of silicon to form a field oxide. An etchback causes the thinnest portions of the field oxide to recede such that a portion of the semiconductor substrate is exposed. An etch through the exposed portion of the semiconductor substrate forms a microtrench between the field oxide and the nitride layer with a lateral dimension that is less than that currently achievable by conventional photolithography. The microtrench is then filled by oxide or nitride growth or by deposition of a dielectric material. In another embodiment, formation of the microtrench is carried out as set forth above, but the nitride layer is removed immediately following trench formation. Alternatively, the pad oxide layer is stripped and a new oxide layer is regrown that substantially covers all exposed surfaces of active areas of the semiconductor substrate. The regrown oxide layer will encroach into all exposed surfaces of active areas and will grow also in the microtrench. Alternatively, the pad oxide layer is etched substantially uniformly at regions distant from nitride layer, whereas the etchant concentrates the etch against the nitride layer such that etching is accelerated at this location. Because of accelerated etching at this location, a breach in the pad oxide layer forms before etching of the pad oxide layer has been generally penetrated. The breach has a width of sub-photolithographic limits preparatory to formation of a microtrench thereunder.
摘要翻译：通过硅的局部氧化来扩大半导体结构衬垫氧化物层以形成场氧化物。回蚀使场氧化物的最薄部分后退，使得半导体衬底的一部分露出。通过半导体衬底的暴露部分的蚀刻在场氧化物和氮化物层之间形成微切口，其横向尺寸小于通过常规光刻法目前可实现的横向尺寸。然后通过氧化物或氮化物生长或通过沉积电介质材料来填充微切口。在另一个实施例中，微沟槽的形成如上所述进行，但是在形成沟槽之后立即去除氮化物层。或者，剥除焊盘氧化物层，并重新生长新的氧化物层，其基本上覆盖半导体衬底的有源区域的所有暴露表面。再生的氧化物层将侵蚀到活性区域的所有暴露表面，并且还将在微型扳手中生长。或者，在远离氮化物层的区域处基本上均匀地蚀刻焊盘氧化物层，而蚀刻剂将蚀刻集中到氮化物层上，使得在该位置加速蚀刻。由于在该位置处的加速蚀刻，在氧化垫层的蚀刻之前形成的衬垫氧化物层中的破裂已经被普遍渗透。该破裂具有准备在其下形成微型切割器的副光刻极限的宽度。

3. 发明授权

US06809395B1 Isolation structure having trench structures formed on both side of a locos 失效
标题翻译：具有形成在位置的两侧的沟槽结构的隔离结构
公开(公告)号：US06809395B1
公开(公告)日：2004-10-26
申请号：US09369579
申请日：1999-08-06
申请人： Fernando Gonzales , Mike Violette , Nanseng Jeng , Aftab Ahmad , Klaus Schuegraf
发明人： Fernando Gonzales , Mike Violette , Nanseng Jeng , Aftab Ahmad , Klaus Schuegraf
IPC分类号： H01L2900
CPC分类号： H01L21/76202 , H01L21/76221 , Y10S148/05
摘要： A semiconductor structure pad oxide layer is enlarged by local oxidation of silicon to form a field oxide. An etchback causes the thinnest portions of the field oxide to recede such that a portion of the semiconductor substrate is exposed. An etch through the exposed portion of the semiconductor substrate forms a microtrench between the field oxide and the nitride layer with a lateral dimension that is less than that currently achievable by conventional photolithography. The microtrench is then filled by oxide or nitride growth or by deposition of a dielectric material. In another embodiment, formation of the microtrench is carried out as set forth above, but the nitride layer is removed immediately following trench formation. Alternatively, the pad oxide layer is stripped and a new oxide layer is regrown that substantially covers all exposed surfaces of active areas of the semiconductor substrate. The regrown oxide layer will encroach into all exposed surfaces of active areas and will grow also in the microtrench. Alternatively, the pad oxide layer is etched substantially uniformly at regions distant from nitride layer, whereas the etchant concentrates the etch against the nitride layer such that etching is accelerated at this location. Because of accelerated etching at this location, a breach in the pad oxide layer forms before etching of the pad oxide layer has been generally penetrated. The breach has a width of sub-photolithographic limits preparatory to formation of a microtrench thereunder.
摘要翻译：通过硅的局部氧化来扩大半导体结构衬垫氧化物层以形成场氧化物。回蚀使场氧化物的最薄部分后退，使得半导体衬底的一部分露出。通过半导体衬底的暴露部分的蚀刻在场氧化物和氮化物层之间形成微切口，其横向尺寸小于通过常规光刻法目前可实现的横向尺寸。然后通过氧化物或氮化物生长或通过沉积电介质材料来填充微切口。在另一个实施例中，微沟槽的形成如上所述进行，但是在形成沟槽之后立即去除氮化物层。或者，剥除焊盘氧化物层，并重新生长新的氧化物层，其基本上覆盖半导体衬底的有源区域的所有暴露表面。再生的氧化物层将侵蚀到活性区域的所有暴露表面，并且还将在微型扳手中生长。或者，在远离氮化物层的区域处基本上均匀地蚀刻焊盘氧化物层，而蚀刻剂将蚀刻集中到氮化物层上，使得在该位置加速蚀刻。由于在该位置处的加速蚀刻，在氧化垫层的蚀刻之前形成的衬垫氧化物层中的破裂已经被普遍渗透。该破裂具有准备在其下形成微型切割器的副光刻极限的宽度。

4. 发明授权

US6127096A Method for reducing photolithographic steps in a semiconductor interconnect process 有权
公开(公告)号：US6127096A
公开(公告)日：2000-10-03
申请号：US286285
申请日：1999-04-05
申请人： Nanseng Jeng , Christophe Pierrat
发明人： Nanseng Jeng , Christophe Pierrat
IPC分类号： G03F1/00 , G03F1/26 , G03F1/29 , G03F1/32 , G03F7/20 , H01L21/027 , H01L21/311 , H01L21/768
CPC分类号： G03F1/26 , G03F1/29 , G03F1/32 , G03F7/2022 , H01L21/0274 , H01L21/31144 , H01L21/76813 , H01L2221/1021
摘要： A semiconductor wafer having a first layer and overlying insulating layer receives a photoresist layer. A first photoresist area is exposed to light having a first dosage, while a second, adjacent photoresist area is concurrently exposed to light having a second dosage. The first area and second area then are concurrently developed to partially expose the photoresist layer. The partial exposure removes photoresist within the first area to one depth and within the second area to a second depth. The second depth differs from the first depth. In one embodiment, the second depth extends through the photoresist down to the insulating layer. After subsequently performing a contact and/or trench etch through the exposed insulating layer and removing excess photoresist above the insulating layer, conductive material is deposited in the contact/trench opening and over the insulating layer. The result is an upper conductive layer coupled to the first layer via a contact or other conductive connection.

5. 发明授权

US5972569A Method for reducing photolithographic steps in a semiconductor interconnect process 失效
标题翻译：减少半导体互连工艺中的光刻步骤的方法
公开(公告)号：US5972569A
公开(公告)日：1999-10-26
申请号：US946462
申请日：1997-10-07
申请人： Nanseng Jeng , Christophe Pierrat
发明人： Nanseng Jeng , Christophe Pierrat
IPC分类号： G03F1/00 , G03F1/26 , G03F1/29 , G03F1/32 , G03F7/20 , H01L21/027 , H01L21/311 , H01L21/768 , G03F7/26
CPC分类号： G03F1/26 , G03F1/29 , G03F1/32 , G03F7/2022 , H01L21/0274 , H01L21/31144 , H01L21/76813 , H01L2221/1021
摘要： A semiconductor wafer having a first layer and overlying insulating layer receives a photoresist layer. A first photoresist area is exposed to light having a first dosage, while a second, adjacent photoresist area is concurrently exposed to light having a second dosage. The first area and second area then are concurrently developed to partially expose the photoresist layer. The partial exposure removes photoresist within the first area to one depth and within the second area to a second depth. The second depth differs from the first depth. In one embodiment the second depth extends through the photoresist down to the insulating layer. After subsequently performing a contact and/or trench etch through the exposed insulating layer and removing excess photoresist above the insulating layer, conductive material is deposited in the contact/trench opening and over the insulating layer. The result is an upper conductive layer coupled to the first layer via a contact or other conductive connection.
摘要翻译：具有第一层和上覆绝缘层的半导体晶片接收光致抗蚀剂层。第一光致抗蚀剂区域暴露于具有第一剂量的光，而第二相邻的光致抗蚀剂区域同时暴露于具有第二剂量的光。然后同时开发第一区域和第二区域以部分地曝光光致抗蚀剂层。部分曝光将第一区域内的光致抗蚀剂移至一个深度并在第二区域内移至第二深度。第二深度与第一深度不同。在一个实施例中，第二深度延伸穿过光致抗蚀剂到达绝缘层。在随后通过暴露的绝缘层进行接触和/或沟槽蚀刻并且去除绝缘层之上的多余的光致抗蚀剂之后，导电材料沉积在接触/沟槽开口中并在绝缘层上方。结果是通过接触或其它导电连接耦合到第一层的上导电层。

6. 发明授权

US5933754A Semiconductor processing method of forming an electrically conductive contact plug 失效
标题翻译：形成导电接触插头的半导体加工方法
公开(公告)号：US5933754A
公开(公告)日：1999-08-03
申请号：US874642
申请日：1997-06-13
申请人： Viju K. Mathews , Nanseng Jeng , Pierre C. Fazan
发明人： Viju K. Mathews , Nanseng Jeng , Pierre C. Fazan
IPC分类号： H01L21/28 , H01L21/768 , H01L23/14 , H01L23/522 , H01L21/308
CPC分类号： H01L21/76843 , H01L21/76804 , H01L23/5226 , H01L2924/0002
摘要： A semiconductor processing method of forming an electrically conductive contact plug relative to a wafer includes, a) providing a substrate to which electrical connection is to be made; b) depositing a layer of first material atop the substrate to a selected thickness; c) pattern masking the first material layer for formation of a desired contact opening therethrough; d) etching through the first material layer to form a contact opening therethrough for making electrical connection with the substrate, the contact opening having an outermost region; e) after etching to form the contact opening, removing the masking from the first material layer; f) after removing the masking from the first material layer, facet sputter etching into the first material layer relative to the contact opening to provide outwardly angled sidewalls which effectively widen the contact opening outermost region, the outwardly angled sidewalls having an inner base where they join with the original contact opening; g) depositing a layer of conductive material atop the wafer and to within the facet etched contact opening to fill the contact opening; and h) etching the conductive material and first material layer inwardly to at least the angled sidewalls' inner base to define an electrically conductive contact plug which electrically connects with the substrate.
摘要翻译：相对于晶片形成导电接触插塞的半导体处理方法包括：a）提供要进行电连接的基板; b）在基板顶部沉积一层第一材料至所选择的厚度; c）图案掩蔽第一材料层以形成所需的接触开口; d）蚀刻通过第一材料层以形成通过其与基板电连接的接触开口，接触开口具有最外区域; e）在蚀刻之后形成接触开口，从第一材料层去除掩模; f）在从第一材料层去除掩模之后，相对于接触开口小面溅射蚀刻到第一材料层中以提供向外成角度的侧壁，这有效地加宽了接触开口最外区域，向外成角度的侧壁具有内部基部，与原来的接触开口; g）在晶片顶部和面蚀刻的接触开口内沉积导电材料层以填充接触开口; 以及h）将所述导电材料和所述第一材料层向内蚀刻到至少所述成角度的侧壁的内部基底，以限定与所述基底电连接的导电接触插塞。

7. 发明授权

US5661073A Method for forming field oxide having uniform thickness 失效
标题翻译：用于形成具有均匀厚度的场氧化物的方法
公开(公告)号：US5661073A
公开(公告)日：1997-08-26
申请号：US514159
申请日：1995-08-11
申请人： Nanseng Jeng
发明人： Nanseng Jeng
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76205 , H01L21/76227
摘要： A method for forming a semiconductor device comprises the steps of providing a semiconductor substrate having first and second surfaces, the second surface having an inferior plane with respect to the first surface. An oxidizing-resistant layer such as nitride is formed on the first surface, and an oxidizable material is formed over the first and second surfaces. A protective material is formed over the first and second surfaces, which is then removed from the first surface. Subsequent to the step of removing the protective material from the first surface, the oxidizable material is removed from the first surface and is left over the second surface. Subsequent to the step of removing the oxidizable material from the first surface, the protective material is removed from the second surface and the oxidizable material remains over the second surface. Subsequent to removing the protective material from the second surface, the oxidizable material on the second surface is oxidized. A field oxide formed by oxidizing the poly can be self-limiting and very uniform, thereby avoiding the commonly observed field oxide thinning effect in tight pitch areas.
摘要翻译：一种形成半导体器件的方法包括以下步骤：提供具有第一和第二表面的半导体衬底，第二表面相对于第一表面具有较差的平面。在第一表面上形成氮化物等耐氧化层，在第一表面和第二表面上形成可氧化材料。在第一表面和第二表面上形成保护材料，然后从第一表面除去。在从第一表面除去保护材料的步骤之后，可氧化材料从第一表面移除并留在第二表面上。在从第一表面除去可氧化材料的步骤之后，从第二表面去除保护材料，并且可氧化材料保留在第二表面上。在从第二表面除去保护材料之后，第二表面上的可氧化材料被氧化。通过氧化聚合物形成的场氧化物可以是自限制的并且非常均匀，从而避免在紧密间距区域中通常观察到的场氧化物稀化效应。

8. 发明授权

US06611038B2 Semiconductor wafer isolation structure formed by field oxidation 失效
公开(公告)号：US06611038B2
公开(公告)日：2003-08-26
申请号：US10029500
申请日：2001-12-19
申请人： Viju K. Mathews , Nanseng Jeng , Pierre C. Fazan
发明人： Viju K. Mathews , Nanseng Jeng , Pierre C. Fazan
IPC分类号： H01L2176
CPC分类号： H01L21/76202
摘要： A method of forming isolation structures in semiconductor substrates comprising exposing a region of the semiconductor simultaneously to a transforming agent and to a viscosity reducing agent so that the transforming agent transforms a portion of the substrate into an isolation structure and the viscosity reducing agent reduces the viscosity of the isolation structure during formation. In one embodiment, a silicon substrate is exposed to oxygen in the presence of fluorine so that a silicon oxide isolation region is formed. The fluorine reduces the viscosity of the silicon oxide isolation region during formation which results in less lateral, bird's beak encroachment under adjacent masking stacks and also results in lower internal stress in the isolation region during formation. The lower internal stress and the lessened lateral encroachment result in thicker and improved isolation regions.

9. 发明授权

US6103595A Assisted local oxidation of silicon 失效
标题翻译：辅助硅的局部氧化
公开(公告)号：US6103595A
公开(公告)日：2000-08-15
申请号：US931093
申请日：1997-08-20
申请人： Nanseng Jeng
发明人： Nanseng Jeng
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76205 , H01L21/76227
摘要： A method for forming a semiconductor device comprises the steps of providing a semiconductor substrate having first and second surfaces, the second surface having an inferior plane with respect to the first surface. An oxidizing-resistant layer such as nitride is formed on the first surface, and an oxidizable material is formed over the first and second surfaces. A protective material is formed over the first and second surfaces, which is then removed from the first surface. Subsequent to the step of removing the protective material from the first surface, the oxidizable material is removed from the first surface and is left over the second surface. Subsequent to the step of removing the oxidizable material from the first surface, the protective material is removed from the second surface and the oxidizable material remains over the second surface. Subsequent to removing the protective material from the second surface, the oxidizable material on the second surface is oxidized. A field oxide formed by oxidizing the poly can be self-limiting and very uniform, thereby avoiding the commonly observed field oxide thinning effect in tight pitch areas.
摘要翻译：一种形成半导体器件的方法包括以下步骤：提供具有第一和第二表面的半导体衬底，第二表面相对于第一表面具有较差的平面。在第一表面上形成氮化物等耐氧化层，在第一表面和第二表面上形成可氧化材料。在第一表面和第二表面上形成保护材料，然后从第一表面除去。在从第一表面除去保护材料的步骤之后，可氧化材料从第一表面移除并留在第二表面上。在从第一表面除去可氧化材料的步骤之后，保护材料从第二表面移除，并且可氧化材料保留在第二表面上。在从第二表面除去保护材料之后，第二表面上的可氧化材料被氧化。通过氧化聚合物形成的场氧化物可以是自限制的并且非常均匀，从而避免在紧密间距区域中通常观察到的场氧化物稀化效应。

10. 发明授权

US6090685A Method of forming a LOCOS trench isolation structure 失效
标题翻译：形成LOCOS沟槽隔离结构的方法
公开(公告)号：US6090685A
公开(公告)日：2000-07-18
申请号：US916475
申请日：1997-08-22
申请人： Fernando Gonzales , Mike Violette , Nanseng Jeng , Aftab Ahmad , Klaus Schuegraf
发明人： Fernando Gonzales , Mike Violette , Nanseng Jeng , Aftab Ahmad , Klaus Schuegraf
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76202 , H01L21/76221 , Y10S148/05
摘要： A semiconductor structure pad oxide layer is enlarged by local oxidation of silicon to form a field oxide. An etchback causes the thinnest portions of the field oxide to recede such that a portion of the semiconductor substrate is exposed. An etch through the exposed portion of the semiconductor substrate forms a microtrench between the field oxide and the nitride layer with a lateral dimension that is less than that currently achievable by conventional photolithography. The microtrench is then filled by oxide or nitride growth or by deposition of a dielectric material. In another embodiment, formation of the microtrench is carried out as set forth above, but the nitride layer is removed immediately following trench formation. Alternatively, the pad oxide layer is stripped and a new oxide layer is regrown that substantially covers all exposed surfaces of active areas of the semiconductor substrate. The regrown oxide layer will encroach into all exposed surfaces of active areas and will grow also in the microtrench. Alternatively, the pad oxide layer is etched substantially uniformly at regions distant from nitride layer, whereas the etchant concentrates the etch against the nitride layer such that etching is accelerated at this location. Because of accelerated etching at this location, a breach in the pad oxide layer forms before etching of the pad oxide layer has been generally penetrated. The breach has a width of sub-photolithographic limits preparatory to formation of a microtrench thereunder.
摘要翻译：通过硅的局部氧化来扩大半导体结构衬垫氧化物层以形成场氧化物。回蚀使场氧化物的最薄部分后退，使得半导体衬底的一部分露出。通过半导体衬底的暴露部分的蚀刻在场氧化物和氮化物层之间形成微切口，其横向尺寸小于通过常规光刻法目前可实现的横向尺寸。然后通过氧化物或氮化物生长或通过沉积电介质材料来填充微切口。在另一个实施例中，微沟槽的形成如上所述进行，但是在形成沟槽之后立即去除氮化物层。或者，剥除焊盘氧化物层，并重新生长新的氧化物层，其基本上覆盖半导体衬底的有源区域的所有暴露表面。再生的氧化物层将侵蚀到活性区域的所有暴露表面，并且还将在微型扳手中生长。或者，在远离氮化物层的区域处基本上均匀地蚀刻焊盘氧化物层，而蚀刻剂将蚀刻集中到氮化物层上，使得在该位置加速蚀刻。由于在该位置处的加速蚀刻，在氧化垫层的蚀刻之前形成的衬垫氧化物层中的破裂已经被普遍渗透。该破裂具有准备在其下形成微型切割器的副光刻极限的宽度。

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