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    • 3. 发明授权
    • Door for oven and an oven
    • 炉门和烤箱
    • US09151505B2
    • 2015-10-06
    • US13553732
    • 2012-07-19
    • Suhwan KimYungeon BaekByoungwoo Choi
    • Suhwan KimYungeon BaekByoungwoo Choi
    • F24C15/02
    • F24C15/02
    • A door for an oven and the oven are provided. The door includes a door frame and a door panel where the door panel is coupled to the door frame. The door panel includes a front panel, a top panel bent from an upper end of the front panel to form a topside of the door, the top panel having a first bent portion spaced from the front panel to contact a top side of the door frame, and a pair of side panels, each side panel being bent from a lateral side of the front panel to form lateral sides of the door, and each side panel having a second bent portion spaced from the front panel to contact sides of the door frame.
    • 提供烤箱和烤箱门。 门包括门框和门面板,门面板联接到门框。 门板包括前板,顶板从前板的上端弯曲以形成门顶部,顶板具有与前板间隔开的第一弯曲部分,以接触门框的顶侧 和一对侧板,每个侧板从前面板的侧面弯曲形成门的侧面,并且每个侧板具有与前板间隔开的第二弯曲部分,以与门框的侧面接触 。
    • 6. 发明授权
    • Non-abrupt switching of sleep transistor of power gate structure
    • 功率门结构睡眠晶体管的非突然切换
    • US06876252B2
    • 2005-04-05
    • US10609360
    • 2003-06-28
    • Suhwan KimDaniel R. KnebelStephen V. Kosonocky
    • Suhwan KimDaniel R. KnebelStephen V. Kosonocky
    • H03K17/16H03K17/72
    • H03K17/163H03K17/164
    • A semiconductor integrated circuit including a non-abrupt switching mechanism for a sleep transistor of a power gate structure to reduce ground bounce is provided. The semiconductor integrated circuit comprises a supply voltage line; a ground voltage line; a virtual ground voltage line; a logic circuit coupled to the supply voltage line and the virtual ground voltage line; at least one sleep transistor for controlling current flow to the logic circuit, the sleep transistor being coupled to the virtual ground voltage line and the ground voltage line; and a non-abrupt switching circuit for sequentially controlling the sleep transistor. The switching mechanism reduces the magnitude of voltage glitches on the power and ground rails as well as the minimum time required to stabilize power and ground.
    • 提供一种包括用于减少地面反弹的功率门结构的休眠晶体管的非突变切换机构的半导体集成电路。 半导体集成电路包括电源电压线; 地电压线; 虚拟地电压线; 耦合到电源电压线和虚拟接地电压线的逻辑电路; 至少一个睡眠晶体管,用于控制到逻辑电路的电流,睡眠晶体管耦合到虚拟接地电压线和地电压线; 以及用于依次控制睡眠晶体管的非突变切换电路。 开关机构可以减少电源和接地导轨上的电压毛刺的大小以及稳定电源和接地所需的最短时间。
    • 8. 发明申请
    • SEMICONDUCTOR DEVICE USING POWER GATING
    • 使用功率增益的半导体器件
    • US20100097097A1
    • 2010-04-22
    • US12288249
    • 2008-10-17
    • Suhwan KimChang-jun Choi
    • Suhwan KimChang-jun Choi
    • H03K17/16G05F3/02
    • H03K19/0016H03K19/00361
    • A semiconductor device using power gating includes a circuit unit and a current blocking unit. The circuit unit is connected between a first voltage node and a virtual voltage node. The current blocking unit is connected between the virtual voltage node and a second voltage node, and can block a leakage current of the circuit unit in a standby mode. Also, the current blocking unit controls whether or not to connect the virtual voltage node and the second voltage node in response to a plurality of random signals whose logic states are randomly transited when the standby mode is switched to an active mode. The semiconductor device can minimize ground bounce noise and can stably apply a voltage to a circuit storing data in a data retention mode.
    • 使用电源门控的半导体器件包括电路单元和电流阻挡单元。 电路单元连接在第一电压节点和虚拟电压节点之间。 电流阻断单元连接在虚拟电压节点和第二电压节点之间,并且可以在待机模式下阻断电路单元的漏电流。 此外,当待机模式切换到活动模式时,当前阻塞单元响应于逻辑状态被随机转移的多个随机信号来控制是否连接虚拟电压节点和第二电压节点。 半导体器件可以最小化地面反弹噪声,并可以稳定地将电压施加到以数据保持模式存储数据的电路。
    • 10. 发明申请
    • Charge recycling power gate
    • 充电回收电源门
    • US20070007997A1
    • 2007-01-11
    • US11518078
    • 2006-09-08
    • Suhwan KimDaniel KnebelStephen Kosonocky
    • Suhwan KimDaniel KnebelStephen Kosonocky
    • H03K19/003
    • H03K19/0019
    • A charge recycling power gate and corresponding method are provided for using a charge sharing effect between a capacitive load of a functional unit and a parasitic capacitance of a charge recycling means to turn on a switching means between a virtual ground and a ground, the charge recycling power gate including a first transistor, a virtual ground in signal communication with a first terminal of the first transistor, a ground in signal communication with a second terminal of the first transistor, a capacitor having a first terminal in signal communication with a third terminal of the first transistor and a second terminal in signal communication with the ground, and a second transistor having a first terminal in signal communication with the virtual ground and a second terminal in signal communication with the third terminal of the first transistor.
    • 提供电荷回收功率门和相应的方法,用于使用功能单元的电容性负载与电荷回收装置的寄生电容之间的电荷共享效应,以接通虚拟地面和地面之间的开关装置,电荷回收 功率门,包括第一晶体管,与第一晶体管的第一端子进行信号通信的虚拟地,与第一晶体管的第二端子进行信号通信的地,电容器,具有与第三晶体管的第三端子信号通信的第一端子 第一晶体管和与地面信号通信的第二端子,以及第二晶体管,其具有与虚拟接地信号通信的第一端子和与第一晶体管的第三端子信号通信的第二端子。