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1. 发明申请

US20020110709A1 Material of low volume resistivity, an aluminum nitride sintered body and a member used for the production of semiconductors 有权
标题翻译：低体积电阻率的材料，氮化铝烧结体和用于制造半导体的部件
公开(公告)号：US20020110709A1
公开(公告)日：2002-08-15
申请号：US09982484
申请日：2001-10-18
申请人： NGK Insulators, Ltd
发明人： Yuji Katsuda , Jun Yoshikawa , Masaaki Masuda , Chikashi Ihara
IPC分类号： B32B019/00
CPC分类号： H01L21/6833 , C04B35/581 , Y10T428/24917
摘要： A material with a low volume resistivity at room temperature composed of an aluminum nitride sintered body is provided. The sintered body contains samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent, and the sintered body contains aluminum nitride phase and samarium-aluminum complex oxide phase. The samarium-aluminum complex oxide phase forms intergranular layers with a low resistivity along the intergranular phase between aluminum nitride grains.
摘要翻译：提供由氮化铝烧结体构成的室温体积电阻率低的材料。该烧结体含有以不低于0.04摩尔％的氧化钐计算的转化含量的钐，烧结体含有氮化铝相和钐铝复合氧化物相。钐铝复合氧化物相沿着氮化铝晶粒之间的晶间相形成具有低电阻率的晶间层。

2. 发明申请

US20020165079A1 Aluminum nitride sintered bodies and members for semiconductor-producing apparatuses 有权
标题翻译：氮化铝烧结体及半导体制造装置用部件
公开(公告)号：US20020165079A1
公开(公告)日：2002-11-07
申请号：US10020499
申请日：2001-12-14
申请人： NGK Insulators, Ltd.
发明人： Yuji Katsuda , Hideyoshi Tsuruta
IPC分类号： C01B021/072 , C04B035/581
CPC分类号： H01L23/15 , C04B35/581 , C04B35/645 , C04B2235/3217 , C04B2235/3224 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/72 , C04B2235/721 , C04B2235/723 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C04B2235/963 , H01L21/6833 , H01L2924/0002 , Y10T279/23 , H01L2924/00
摘要： An aluminum nitride sintered body contains aluminum nitride as a main component, at least one rare earth metal element in an amount of not less than 0.4 mol % and not more than 2.0 mol % as calculated in the form of an oxide thereof and aluminum oxide component in an amount of not less than 0.5 mol % and not more than 2.0 mol %. Si content of the sintered body is not more than 80 ppm and an average particle diameter of aluminum nitride grains is not more than 3 nullm. The aluminum nitride sintered body hardly peels aluminum nitride grains and exhibits high resistivity of at least 108 nullnullcm even in a high temperature range of, for example, 300-500null C., as well as relatively high thermal conductivity.
摘要翻译：氮化铝烧结体包含氮化铝作为主要成分，至少一种稀土金属元素的量为不少于0.4mol％且不大于2.0mol％，以其氧化物和氧化铝组分的形式计算其量不小于0.5mol％且不大于2.0mol％。烧结体的Si含量不大于80ppm，氮化铝颗粒的平均粒径不大于3μm。即使在例如300-500℃的高温范围内，氮化铝烧结体几乎不剥离氮化铝颗粒并且表现出至少为108欧姆·厘米的高电阻率，并且具有相对高的热导率。

3. 发明申请

US20030203804A1 Aluminum nitride materials and members used for the production of semiconductors 有权
标题翻译：氮化铝材料和用于半导体生产的部件
公开(公告)号：US20030203804A1
公开(公告)日：2003-10-30
申请号：US10417962
申请日：2003-04-17
申请人： NGK Insulators, Ltd.
发明人： Naomi Teratani , Jun Yoshikawa , Yuji Katsuda
IPC分类号： C04B035/581 , C04B035/582
CPC分类号： C04B35/581
摘要： An object of the present invention is to provide an aluminum nitride material having a high thermal conductivity and reduced volume resistivity at room temperature. An aluminum nitride material has interconnected intergranular phase functioning as electrical conductive phase. The material has a content of the conductive phase of not higher than 20 percent, calculated according to the following formula based on an X-ray diffraction profile. Content of the conductive phase (%)null(Integrated strength of the strongest peak of the conductive phase/Integrated strength of the strongest peak of aluminum nitride phase)null100. Alternatively, the material has an electric current response index of not lower than 0.9 and not higher than 1.1 defined according to the following formula. Electric current response indexnull(Electric current at 5 seconds after a voltage is applied/Electric current at 60 seconds after a voltage is applied).
摘要翻译：本发明的目的是提供一种在室温下具有高导热性和体积电阻率降低的氮化铝材料。氮化铝材料具有作为导电相的相互作用的晶间相。该材料的导电相含量不高于20％，根据以下公式计算，基于X射线衍射图。导电相的含量（％）=（导电相的最强峰的集成强度/氮化铝相的最强峰的集成强度）×100。或者，该材料具有不低于0.9且不高于根据下式定义的电流响应指数。电流响应指数=（施加电压后5秒的电流/施加电压后60秒的电流）。

4. 发明申请

US20030153452A1 Aluminum nitride ceramics, members for use in a system for producing semiconductors, corrosion resistant members and conductive members 有权
标题翻译：氮化铝陶瓷，用于制造半导体的系统的构件，耐腐蚀构件和导电构件
公开(公告)号：US20030153452A1
公开(公告)日：2003-08-14
申请号：US10306678
申请日：2002-11-26
申请人： NGK Insulators, Ltd.
发明人： Yuji Katsuda , Jun Yoshikawa
IPC分类号： C04B035/581 , C04B035/582
CPC分类号： C04B35/645 , C04B35/581 , C04B2235/3222 , C04B2235/3225 , C04B2235/3804 , C04B2235/3817 , C04B2235/3821 , C04B2235/386 , C04B2235/3865 , C04B2235/422 , C04B2235/761 , C04B2235/77 , C04B2235/78 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/9607
摘要： An object of the present invention is to preserve the characteristic properties of an aluminum nitride ceramics and reduce its volume resistivity. An aluminum nitride ceramics contains boron atoms in an amount of not lower than 1.0 weight percent and carbon atoms in an amount of not lower than 0.3 weight percent and has a volume resistivity at room temperature of not higher than 1null1012 nullnullcm. Alternatively, an aluminum ceramics comprises aluminum nitride and intergranular phases mainly consisting of boron nitride constituting a conducting path and has a volume resistivity at room temperature of 1null1012 nullnullcm. Such ceramics may be obtained by holding a mixture at least containing aluminum nitride and boron carbide at a holding temperature not lower than 1400null C. and not higher than 1800 null C. and then sintered at a maximum temperature higher than the holding temperature.
摘要翻译：本发明的目的是保持氮化铝陶瓷的特性，降低体积电阻率。氮化铝陶瓷含有不低于1.0重量％的硼原子和不低于0.3重量％的碳原子，并且在室温下的体积电阻率不高于1×10 12 OMEGA·cm。或者，铝陶瓷包括主要由构成导电路径的氮化硼组成的氮化铝和晶间相，并且在室温下的体积电阻率为1×10 12欧姆·厘米。这样的陶瓷可以通过将保持至少含有氮化铝和碳化硼的混合物保持在不低于1400℃且不高于1800℃的保持温度下，然后在高于保持温度的最高温度下烧结来获得。

5. 发明申请

US20040096706A1 Aluminum nitride ceramics and a member used for the production of semiconductors 有权
标题翻译：氮化铝陶瓷和用于制造半导体的部件
公开(公告)号：US20040096706A1
公开(公告)日：2004-05-20
申请号：US10704997
申请日：2003-11-10
申请人： NGK Insulators, Ltd.
发明人： Naomi Teratani , Yuji Katsuda
IPC分类号： B32B009/00
CPC分类号： C04B35/645 , C04B35/581 , C04B35/62655 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3865 , C04B2235/3869 , C04B2235/3895 , C04B2235/5436 , C04B2235/656 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/72 , C04B2235/721 , C04B2235/723 , C04B2235/761 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/9607 , H01L21/6831 , Y10T428/252
摘要： The object of the present invention is to provide an aluminum nitride ceramics having a low volume resistivity at room temperature and a relatively low content of samarium. An aluminum nitride ceramics contains aluminum nitride as a main component and samarium in a converted content calculated as samarium oxide of 0.060 mole percent or lower. Aluminum nitride particles and samarium-aluminum composite oxide phase having a length of 7 micrometer or more are formed therein. Alternatively, an aluminum nitride ceramics contains aluminum nitride as a main component and samarium in a converted content calculated as samarium oxide of 0.060 mole percent or lower. Aluminum nitride particles and the aluminum nitride particles has a mean grain diameter of 5 nullm or more are formed therein.
摘要翻译：本发明的目的是提供一种在室温下具有低体积电阻率和较低含量的钐的氮化铝陶瓷。氮化铝陶瓷含有氮化铝作为主要成分，钐的转化成分含量为0.060摩尔％以下的氧化钐。在其中形成长度为7微米或更大的氮化铝颗粒和钐铝复合氧化物相。或者，氮化铝陶瓷含有氮化铝作为主要成分，钐的转化成分含量为0.060摩尔％以下的氧化钐。氮化铝粒子和氮化铝粒子的平均粒径为5μm以上。

6. 发明申请

US20020018921A1 Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members 有权
标题翻译：卤素气体等离子体构件及其制造方法，层压板和耐腐蚀构件
公开(公告)号：US20020018921A1
公开(公告)日：2002-02-14
申请号：US09835857
申请日：2001-04-16
申请人： NGK Insulators, Ltd.
发明人： Hirotake Yamada , Yuji Katsuda , Tsuneaki Ohashi , Masaaki Masuda , Masashi Harada , Hiroyuki Iwasaki , Shigenori Ito
IPC分类号： B32B018/00 , B32B009/00 , B05D003/02 , B05D001/02
CPC分类号： C04B41/009 , B32B18/00 , C04B35/63 , C04B35/63416 , C04B35/63424 , C04B35/6365 , C04B37/005 , C04B41/5045 , C04B41/52 , C04B41/87 , C04B41/89 , C04B2111/00405 , C04B2111/20 , C04B2235/656 , C04B2235/6567 , C04B2237/34 , C04B2237/343 , C04B2237/348 , C04B2237/52 , C04B2237/704 , C04B2237/708 , C23C4/00 , C23C4/18 , C23C16/40 , C23C16/4404 , C23C24/08 , C23C26/00 , C23C30/00 , Y10T428/249953 , Y10T428/26 , Y10T428/263 , C04B41/0072 , C04B41/4527 , C04B41/5031 , C04B41/4556 , C04B41/5032 , C04B41/522 , C04B41/5011 , C04B35/10 , C04B35/48 , C04B38/00
摘要： A halogen gas plasma-resistant member to be exposed to a halogen gas plasma, includes a main body of said member, and a corrosion-resistant film formed at least a surface of said main body, wherein a peeling resistance of the corrosive film to said main body is not less than 15 MPa.
摘要翻译：要暴露于卤素气体等离子体的卤素等离子体的构件包括所述构件的主体，以及形成在所述主体的至少表面上的耐腐蚀膜，其中所述腐蚀性膜对所述主体不低于15MPa。

7. 发明申请

US20030130106A1 Aluminum nitride ceramics, members for use in a system for producing semiconductors, and corrosion resistant members 有权
标题翻译：氮化铝陶瓷，用于半导体制造系统的部件和耐腐蚀部件
公开(公告)号：US20030130106A1
公开(公告)日：2003-07-10
申请号：US10308221
申请日：2002-11-26
申请人： NGK Insulators, Ltd.
发明人： Jun Yoshikawa , Yuji Katsuda
IPC分类号： C04B035/581
CPC分类号： C04B35/581 , C04B35/64 , C04B35/645 , C04B2235/3217 , C04B2235/3222 , C04B2235/3225 , C04B2235/3804 , C04B2235/3821 , C04B2235/386 , C04B2235/3865 , C04B2235/3895 , C04B2235/604 , C04B2235/661 , C04B2235/723 , C04B2235/761 , C04B2235/77 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/9607
摘要： It is an object of the present invention to increase the volume resistivity of an aluminum nitride ceramics. An aluminum nitride ceramics contains 0.5 to 10 weight percent of boron atoms and 0.1 to 2.5 weight percent of carbon atoms and having a volume resistivity at room temperature of not lower than 1null1014 nullnullcm. Alternatively, the ceramics has a volume resistivity at 500null C. of not lower than 1null108 nullnullcm. Alternatively, an aluminum nitride ceramics has an a-axis lattice constant of aluminum nitride not shorter than 3.112 angstrom and a c-axis lattice constant of aluminum nitride not shorter than 4.980 angstrom.
摘要翻译：本发明的目的是提高氮化铝陶瓷的体积电阻率。氮化铝陶瓷含有0.5-10重量％的硼原子和0.1-2.5重量％的碳原子，并且在室温下的体积电阻率不低于1×10 14欧姆·厘米。或者，陶瓷在500℃下的体积电阻率不低于1×10 8欧姆·厘米。或者，氮化铝陶瓷具有不小于3.112埃的氮化铝的a轴晶格常数和不小于4.980埃的氮化铝的c轴晶格常数。

8. 发明申请

US20010031334A1 Composite sintered bodies and a process for producing the same 审中-公开
标题翻译：复合烧结体及其制造方法
公开(公告)号：US20010031334A1
公开(公告)日：2001-10-18
申请号：US09741139
申请日：2000-12-19
申请人： NGK Insulators, Ltd.
发明人： Yuji Katsuda , Masaaki Masuda , Yayo Akai , Tomio Suzuki
IPC分类号： B32B003/02
CPC分类号： C03C14/004
摘要： A composite sintered body produced from a glass powder and a powder of a conductive oxide, said sintered body having a glass phase and a conductive oxide phase dispersed in the glass phase, wherein the conductive oxide phase extends continuously three-dimensionally, and the composite sintered body has a volume resistance value of not more than 100 Mnullnullcm.
摘要翻译：一种由玻璃粉末和导电氧化物粉末制成的复合烧结体，所述烧结体具有分散在玻璃相中的玻璃相和导电氧化物相，其中导电氧化物相连续三维延伸，复合烧结体体积体积电阻值不大于100MOMEGA.cm。

9. 发明申请

US20010006172A1 Electrically heated substrate with multiple ceramic parts each having different volume resitivities 有权
公开(公告)号：US20010006172A1
公开(公告)日：2001-07-05
申请号：US09753481
申请日：2001-01-03
申请人： NGK Insulators, Ltd.
发明人： Yuji Katsuda , Kiyoshi Araki , Tsuneaki Ohashi
IPC分类号： H01L021/205
CPC分类号： H05B3/748 , H05B3/283 , H05B3/74 , Y10T29/49083
摘要： A heater comprising a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part, wherein the substrate comprises a first ceramic material and the resistance control part comprises a second ceramic material which has higher volume resistivity than that of the first ceramics.

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