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1. 发明授权

US08370680B2 Solid state storage system for controlling reserved area and method of controlling the same 有权
标题翻译：用于控制保留区的固态存储系统及其控制方法
公开(公告)号：US08370680B2
公开(公告)日：2013-02-05
申请号：US12839325
申请日：2010-07-19
申请人： Myung Suk Lee , Jeong Soon Kwak , Kyeong Rho Kim , Yang Gi Moon
发明人： Myung Suk Lee , Jeong Soon Kwak , Kyeong Rho Kim , Yang Gi Moon
IPC分类号： G06F11/00
CPC分类号： G06F11/2094 , G06F11/1662
摘要： A solid state storage system includes a flash memory region comprising a plurality of memory blocks and a plurality of replacement blocks corresponding to error-occurred blocks when errors occur in the memory blocks; and a memory controller configured to perform a control operation to replace the error-occurred blocks with the replacement blocks, wherein the error-occurred blocks comprise correctable blocks and uncorrectable blocks, and wherein the memory controller determines whether the error-occurred blocks are the correctable blocks or the uncorrectable blocks and controls zones of the replacement blocks, replaced in correspondence to the correctable blocks, to be allocated a plurality of times.
摘要翻译：固态存储系统包括闪速存储器区域，其包括多个存储器块和当在存储器块中发生错误时与错误发生的块相对应的多个替换块; 以及存储器控制器，被配置为执行用所述替换块替换所述错误发生的块的控制操作，其中所述错误发生的块包括可校正块和不可校正块，并且其中所述存储器控制器确定所述错误发生的块是否是可校正的块或不可校正的块和控制更换块的区域，以对应于可校正块替换，被分配多次。

2. 发明申请

US20110161727A1 SOLID STATE STORAGE SYSTEM FOR CONTROLLING RESERVED AREA AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：用于控制保留区域的固态存储系统及其控制方法
公开(公告)号：US20110161727A1
公开(公告)日：2011-06-30
申请号：US12839325
申请日：2010-07-19
申请人： Myung Suk LEE , Jeong Soon Kwak , Kyeong Rho Kim , Yang Gi Moon
发明人： Myung Suk LEE , Jeong Soon Kwak , Kyeong Rho Kim , Yang Gi Moon
IPC分类号： G06F11/20 , G06F11/00
CPC分类号： G06F11/2094 , G06F11/1662
摘要： A solid state storage system includes a flash memory region comprising a plurality of memory blocks and a plurality of replacement blocks corresponding to error-occurred blocks when errors occur in the memory blocks; and a memory controller configured to perform a control operation to replace the error-occurred blocks with the replacement blocks, wherein the error-occurred blocks comprise correctable blocks and uncorrectable blocks, and wherein the memory controller determines whether the error-occurred blocks are the correctable blocks or the uncorrectable blocks and controls zones of the replacement blocks, replaced in correspondence to the correctable blocks, to be allocated a plurality of times.
摘要翻译：固态存储系统包括闪速存储器区域，其包括多个存储器块和当在存储器块中发生错误时与错误发生的块相对应的多个替换块; 以及存储器控制器，被配置为执行用所述替换块替换所述错误发生的块的控制操作，其中所述错误发生的块包括可校正块和不可校正块，并且其中所述存储器控制器确定所述错误发生的块是否是可校正的块或不可校正的块和控制更换块的区域，以对应于可校正块替换，被分配多次。

3. 发明申请

US20110107016A1 SOLID STATE STORAGE SYSTEMS AND METHODS FOR FLEXIBLY CONTROLLING WEAR LEVELING 有权
标题翻译：固态储存系统和方法灵活控制磨损水平
公开(公告)号：US20110107016A1
公开(公告)日：2011-05-05
申请号：US12648369
申请日：2009-12-29
申请人： Eui Jin Kim , Kyeong Rho Kim , Young Ho Kim , Jeong Soon Kwak
发明人： Eui Jin Kim , Kyeong Rho Kim , Young Ho Kim , Jeong Soon Kwak
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： Solid-state storage systems and methods are provided for controlling a wear leveling process for uniform use of the memory cells that replaces worn memory blocks with less frequently used memory blocks. The wear leveling process is performed by changing the physical locations of the storage cells within each memory zone or plane. Reference values of target memory block erase counts and worn memory block erase counts are used for searching target memory blocks to be used as replacements.
摘要翻译：提供了固态存储系统和方法，用于控制损耗均衡过程以均匀地使用用较少频繁使用的存储块代替已磨损的存储块的存储器单元。通过改变每个存储器区域或平面内的存储单元的物理位置来执行损耗均衡处理。目标存储器块擦除计数和磨损存储器块擦除计数的参考值用于搜索要用作替换的目标存储器块。

4. 发明授权

US08364885B2 Semiconductor storage system for decreasing page copy frequency and controlling method thereof 有权
标题翻译：用于降低页复印频率的半导体存储系统及其控制方法
公开(公告)号：US08364885B2
公开(公告)日：2013-01-29
申请号：US12636289
申请日：2009-12-11
申请人： Wun Mo Yang , Kyeong Rho Kim , Jeong Soon Kwak
发明人： Wun Mo Yang , Kyeong Rho Kim , Jeong Soon Kwak
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F11/004 , G06F2212/7203 , G06F2212/7204
摘要： A semiconductor storage system includes a memory controller that classifies a memory block of a memory area into a data block and a buffer block. The buffer block corresponds to the data block. The memory controller compares the number of free pages of both the data block and the buffer block with the number of valid pages of the data block and the buffer block during mergence in order to select the merged target block. Depending on the result of the comparison, either the data block or the buffer block is selected as the merged target block.
摘要翻译：半导体存储系统包括存储器控制器，其将存储器区域的存储块分类成数据块和缓冲块。缓冲区块对应于数据块。存储器控制器将数据块和缓冲器块的空闲页数与合并期间的数据块和缓冲块的有效页数进行比较，以选择合并的目标块。根据比较结果，选择数据块或缓冲块作为合并的目标块。

5. 发明授权

US08335887B2 Solid state storage systems and methods for flexibly controlling wear leveling 有权
标题翻译：固态存储系统和方法，用于灵活控制磨损均衡
公开(公告)号：US08335887B2
公开(公告)日：2012-12-18
申请号：US12648369
申请日：2009-12-29
申请人： Eui Jin Kim , Kyeong Rho Kim , Young Ho Kim , Jeong Soon Kwak
发明人： Eui Jin Kim , Kyeong Rho Kim , Young Ho Kim , Jeong Soon Kwak
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： Solid-state storage systems and methods are provided for controlling a wear leveling process for uniform use of the memory cells that replaces worn memory blocks with less frequently used memory blocks. The wear leveling process is performed by changing the physical locations of the storage cells within each memory zone or plane. Reference values of target memory block erase counts and worn memory block erase counts are used for searching target memory blocks to be used as replacements.
摘要翻译：提供了固态存储系统和方法，用于控制损耗均衡过程以均匀地使用用较少频繁使用的存储块代替已磨损的存储块的存储器单元。通过改变每个存储器区域或平面内的存储单元的物理位置来执行损耗均衡处理。目标存储器块擦除计数和磨损存储器块擦除计数的参考值用于搜索要用作替换的目标存储器块。

6. 发明授权

US08904095B2 Data storage device and operating method thereof 有权
标题翻译：数据存储装置及其操作方法
公开(公告)号：US08904095B2
公开(公告)日：2014-12-02
申请号：US13602227
申请日：2012-09-03
申请人： Young Ho Kim , Kyeong Rho Kim , Jeong Soon Kwak
发明人： Young Ho Kim , Kyeong Rho Kim , Jeong Soon Kwak
IPC分类号： G06F12/00 , G06F13/00
CPC分类号： G06F12/0246 , G06F3/0613 , G06F3/064 , G06F3/0679 , G06F12/0607 , G06F2212/7201 , G06F2212/7206 , G06F2212/7208
摘要： An operating method of a data storage device including a plurality of nonvolatile memory devices includes the steps of: mapping physical addresses of the nonvolatile memory devices into logical addresses; reflecting environmental factors to remap a physical address into a logical address requested to be accessed; and performing an interleaving operation for the nonvolatile memory devices using the remapped physical address.
摘要翻译：包括多个非易失性存储器件的数据存储设备的操作方法包括以下步骤：将非易失性存储器件的物理地址映射为逻辑地址; 反映环境因素将物理地址重新映射成请求访问的逻辑地址; 以及使用重新映射的物理地址对非易失性存储器件执行交织操作。

7. 发明申请

US20120191897A1 NON-VOLATILE MEMORY SYSTEM AND MANAGEMENT METHOD THEREOF 审中-公开
标题翻译：非易失性存储器系统及其管理方法
公开(公告)号：US20120191897A1
公开(公告)日：2012-07-26
申请号：US13188668
申请日：2011-07-22
申请人： Wun Mo YANG , Kyeong Rho Kim , Jeong Soon Kwak
发明人： Wun Mo YANG , Kyeong Rho Kim , Jeong Soon Kwak
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7203 , Y02D10/13
摘要： A non-volatile memory system includes a memory area including a plurality of non-volatile memory blocks, and a micro control unit configured to manage the memory blocks as a data block and a buffer block. As a write command is input, if no buffer block assigned to the data block exists and a free page exists in the data block, the micro control unit converts the data block to a self-buffer block.
摘要翻译：非易失性存储器系统包括包括多个非易失性存储器块的存储区域和被配置为将存储器块管理为数据块和缓冲器块的微控制单元。当输入写命令时，如果不存在分配给数据块的缓冲块，并且数据块中存在空闲页，则微控制单元将数据块转换为自缓冲块。

8. 发明授权

US08214698B2 Solid state storage system with improved data merging efficiency and control method thereof 有权
标题翻译：具有改善数据合并效率的固态存储系统及其控制方法
公开(公告)号：US08214698B2
公开(公告)日：2012-07-03
申请号：US12648346
申请日：2009-12-29
申请人： Young Ho Kim , Kyeong Rho Kim , Myung Suk Lee
发明人： Young Ho Kim , Kyeong Rho Kim , Myung Suk Lee
IPC分类号： G11C29/24 , G11C29/56
CPC分类号： G06F11/141 , G06F11/1666 , G06F11/20 , G06F12/0246 , G06F2212/7204
摘要： The presented solid state storage system provides an efficient manner of processing read and write operations in a memory block that has a faulty page of memory within it. The solid state storage system includes a flash memory area and a memory controller. The memory controller stores link information into a buffer, allocates a first temporary physical block to resume operations of the bad block past the first bad page, updates and stores mapping information associated with the remaining portions of the bad block past the first bad page, and merges together those valid pages from among the bad block into a final physical block by merging together all prior successfully operated valid pages from among the bad block with any subsequently successfully operated valid pages which are associated with successful operations subsequently to the failure in the first bad page of the bad block.
摘要翻译：所呈现的固态存储系统提供了在存储器块中处理读取和写入操作的有效方式，该存储器块内存在错误的存储器页面。固态存储系统包括闪存区域和存储器控制器。存储器控制器将链接信息存储到缓冲器中，分配第一临时物理块以恢复经过第一坏页的坏块的操作，更新并存储与坏块的剩余部分相关联的映射信息超过第一坏页，以及将来自坏块之间的有效页面合并到最终物理块中，将来自坏块的所有先前成功操作的有效页面与随后成功操作的有效页面合并在一起，该页面与成功操作相关联，随后在第一个错误中发生故障坏块的页面。

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