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    • 9. 发明授权
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US08148193B2
    • 2012-04-03
    • US13236941
    • 2011-09-20
    • Jae-Hyun ParkJae-Hee Oh
    • Jae-Hyun ParkJae-Hee Oh
    • H01L21/00
    • H01L27/2409H01L45/06H01L45/1233H01L45/126H01L45/144H01L45/16
    • A semiconductor device such as a phase change memory device includes a semiconductor substrate including an active region, a conductive pattern disposed to expose the active region, an interlayer dielectric pattern provided on the conductive pattern and including an opening formed on the exposed active region and a contact hole spaced apart from the opening to expose the conductive pattern, a semiconductor pattern and a heater electrode pattern electrically connected to the exposed active region and provided in the opening, a contact plug connected to the exposed conductive pattern and provided to fill the contact hole, and a phase change material layer provided on the heater electrode pattern.
    • 诸如相变存储器件的半导体器件包括:半导体衬底,包括有源区,布置成暴露有源区的导电图案;设置在导电图案上的层间电介质图案,并且包括形成在暴露的有源区上的开口;以及 接触孔与开口间隔开以暴露导电图案,半导体图案和电连接到暴露的有源区并且设置在开口中的加热器电极图案,连接到暴露的导电图案并被提供以填充接触孔的接触插塞 以及设置在加热器电极图案上的相变材料层。