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1. 发明申请

US20070215278A1 Plasma etching apparatus and method for forming inner wall of plasma processing chamber 审中-公开
标题翻译：等离子体蚀刻装置及等离子体处理室内壁形成方法
公开(公告)号：US20070215278A1
公开(公告)日：2007-09-20
申请号：US11367597
申请日：2006-03-06
申请人： Muneo Furuse , Masanori Kadotani , Katsuji Matano , Tadayoshi Kawaguchi , Masatsugu Arai
发明人： Muneo Furuse , Masanori Kadotani , Katsuji Matano , Tadayoshi Kawaguchi , Masatsugu Arai
IPC分类号： H01L21/306
CPC分类号： H01J37/32504 , H01J37/32477
摘要： A plasma etching apparatus is provided which can prevent corrosion of an aluminum substrate constituting an etching processing chamber or an inside component thereof, thereby avoiding a reduction in productivity due to scattering of a sprayed coating. In the plasma etching apparatus, an anodic oxide film is disposed between a ceramic sprayed coating with excellent resistance to plasma, and the etching processing chamber and the inside component thereof made of aluminum alloy. The anodic oxide film has a thickness of 5 μm or less to have heat resistance.
摘要翻译：提供一种等离子体蚀刻装置，其可以防止构成蚀刻处理室或其内部组分的铝基板的腐蚀，从而避免由于喷涂涂层的飞散而导致的生产率降低。在等离子体蚀刻装置中，阳极氧化膜设置在耐等离子体性优异的陶瓷喷涂涂层之间，蚀刻处理室及其内部由铝合金制成。阳极氧化膜的厚度为5μm以下，具有耐热性。

2. 发明申请

US20050193951A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20050193951A1
公开(公告)日：2005-09-08
申请号：US10793782
申请日：2004-03-08
申请人： Muneo Furuse , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
发明人： Muneo Furuse , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H01L21/68757 , H01J37/32559
摘要： The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.
摘要翻译：本发明的目的是提供能够长时间稳定地处理基板的等离子体处理装置。等离子体处理装置具有设置在处理室中的基板保持器和用于保护所述基板保持器的支撑台的电极盖，用于使用在处理室中产生的等离子体来处理放置在所述支撑台上的晶片，其中至少一个表面位于晶片边缘正下方的至少一个与等离子体接触的电极盖的表面的电极盖被涂覆有耐等离子体的材料并且包括Y 2 或其混合物作为其主要组分，其中R 1，R 2，R 3，R 3，R 3，R 3，

3. 发明申请

US20080314321A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080314321A1
公开(公告)日：2008-12-25
申请号：US12203804
申请日：2008-09-03
申请人： Muneo FURUSE , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
发明人： Muneo FURUSE , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
IPC分类号： C23C16/458
CPC分类号： H01L21/68757 , H01J37/32559
摘要： The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.
摘要翻译：本发明的目的是提供能够长时间稳定地处理基板的等离子体处理装置。等离子体处理装置具有设置在处理室中的基板保持器和用于保护所述基板保持器的支撑台的电极盖，用于使用在处理室中产生的等离子体来处理放置在所述支撑台上的晶片，其中至少一个表面位于晶片边缘正下方的至少一个与等离子体接触的电极盖的表面的电极盖被涂覆有耐等离子体并包含Y 2 O 3，Yb 2 O 3或YF 3的材料，或它们的主要成分。

4. 发明申请

US20050199183A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20050199183A1
公开(公告)日：2005-09-15
申请号：US10795329
申请日：2004-03-09
申请人： Masatsugu Arai , Tsutomu Tetsuka , Hiroyuki Kitsunai , Muneo Furuse , Masanori Kadotani
发明人： Masatsugu Arai , Tsutomu Tetsuka , Hiroyuki Kitsunai , Muneo Furuse , Masanori Kadotani
IPC分类号： C23C16/00
CPC分类号： C23C16/4404 , C23C16/5096 , H01J37/32467 , H01J37/32477
摘要： The purpose of the invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The present plasma processing apparatus for processing a substrate placed on a substrate holder disposed in a processing chamber using a plasma generated in the processing chamber comprises at least one member detachably mounted on an inner wall surface of the processing chamber having a portion coated with a material different from a material coating the other portion.
摘要翻译：本发明的目的是提供能够长时间稳定地处理衬底的等离子体处理装置。使用在处理室中产生的等离子体处理设置在处理室中的基板保持器上的基板的本等离子体处理装置包括至少一个可拆卸地安装在处理室的内壁表面上的部件，该部件具有涂覆有材料的部分不同于涂覆其他部分的材料。

5. 发明申请

US20050051089A1 Plasma processing apparatus 审中-公开
公开(公告)号：US20050051089A1
公开(公告)日：2005-03-10
申请号：US10968249
申请日：2004-10-20
申请人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
发明人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
IPC分类号： C23C16/44 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32458 , C23C16/4404 , H01J37/32477
摘要： It is required for the conventional plasma processing apparatus used for plasma processing in a reduced pressure atmosphere to replace the component parts such as earth member frequently as the expendable supplies because an insulation-processed layer and the substrate itself are thinned due to plasma and impurities contained in these thinned materials diffuse into plasma to result in adverse effect on a sample such as wafer, and thinning of the insulation-processed layer due to plasma and resultant electrical effect of the thinning of the insulation-processed layer cause the change of the state of plasma. The invention solves the problem by using electrically conductive ceramic that is formed of a baked material mainly composed of alumina for component parts of the apparatus in the plasma processing apparatus used for plasma processing of an sample to be processed such as wafer in a reduced pressure atmosphere.

6. 发明申请

US20090183835A1 ETCHING PROCESS APPARATUS AND MEMBER FOR ETCHING PROCESS CHAMBER 审中-公开
标题翻译：蚀刻工艺设备和蚀刻过程室的成员
公开(公告)号：US20090183835A1
公开(公告)日：2009-07-23
申请号：US12040058
申请日：2008-02-29
申请人： Muneo FURUSE , Shingo Kimura , Masanori Kadotani
发明人： Muneo FURUSE , Shingo Kimura , Masanori Kadotani
IPC分类号： C23F1/02
CPC分类号： H01J37/32495 , H01J2237/3343
摘要： It is an object of the present invention to provide an etching process apparatus which can suppress evolution of foreign matter to improve production yield.An etching process apparatus comprising: a vacuum container and a process chamber inside of the vacuum container, in which a sample set in the process chamber held in the vacuum container is etched by the use of plasma; a member held inside of the process chamber; and a coating film which is formed by spray-coating a given material and covers a surface of the member and is exposed to the plasma, wherein, in a surface thereof, pores therein are sealed by the use of a material same as the given material.
摘要翻译：本发明的目的是提供一种可以抑制异物进化以提高产量的蚀刻处理装置。一种蚀刻处理装置，包括：在真空容器内部的真空容器和处理室，其中通过使用等离子体蚀刻保持在真空容器中的处理室中的样品; 处理室内部的一个成员; 以及涂膜，其通过喷涂给定材料并覆盖构件的表面并暴露于等离子体而形成，其中在其表面中通过使用与给定材料相同的材料密封其中的孔。

7. 发明申请

US20060157198A1 Member for plasma processing apparatus and plasma processing apparatus 审中-公开
标题翻译：等离子处理装置和等离子体处理装置的成员
公开(公告)号：US20060157198A1
公开(公告)日：2006-07-20
申请号：US11065084
申请日：2005-02-25
申请人： Muneo Furuse , Masanori Kadotani , Hiroho Kitada , Shingo Kimura
发明人： Muneo Furuse , Masanori Kadotani , Hiroho Kitada , Shingo Kimura
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： H01J37/3255 , H01J37/32009
摘要： Provided is a plasma processing apparatus, which comprises, as a member facing plasma in a plasma processing chamber, a member composed of a material prepared by incorporating a conductive material in quartz or germanium which is an amorphous base material.
摘要翻译：提供了一种等离子体处理装置，其包括作为在等离子体处理室中面向等离子体的构件，由通过将石英或锗中的导电材料并入作为非晶基材而制备的材料构成的构件。

8. 发明授权

US06837937B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06837937B2
公开(公告)日：2005-01-04
申请号：US10228048
申请日：2002-08-27
申请人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
发明人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
IPC分类号： C23C16/44 , H01J37/32 , C23C16/00 , H05H1/00
CPC分类号： H01J37/32458 , C23C16/4404 , H01J37/32477
摘要： It is required for the conventional plasma processing apparatus used for plasma processing in a reduced pressure atmosphere to replace the component parts such as earth member frequently as the expendable supplies because an insulation-processed layer and the substrate itself are thinned due to plasma and impurities contained in these thinned materials diffuse into plasma to result in adverse effect on a sample such as wafer, and thinning of the insulation-processed layer due to plasma and resultant electrical effect of the thinning of the insulation-processed layer cause the change of the state of plasma. The invention solves the problem by using electrically conductive ceramic that is formed of a baked material mainly composed of alumina for component parts of the apparatus in the plasma processing apparatus used for plasma processing of an sample to be processed such as wafer in a reduced pressure atmosphere.
摘要翻译：在减压气氛中用于等离子体处理的常规等离子体处理装置需要作为消耗品频繁地代替诸如地球构件的部件，因为绝缘处理层和衬底本身由于等离子体和杂质而被减薄在这些变薄的材料中扩散到等离子体中，导致对诸如晶片的样品的不利影响，以及由于等离子体而导致的绝缘处理层的变薄，并且导致绝缘处理层的变薄的电致效应导致了等离子体。本发明通过使用由主要由氧化铝组成的焙烧材料形成的导电陶瓷，用于在等离子体处理装置中的等离子体处理装置中用于待处理样品例如晶片的减压气氛。

9. 发明授权

US06897403B2 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US06897403B2
公开(公告)日：2005-05-24
申请号：US10378601
申请日：2003-03-05
申请人： Ryujiro Udo , Masatsugu Arai , Motohiko Yoshigai , Masanori Kadotani
发明人： Ryujiro Udo , Masatsugu Arai , Motohiko Yoshigai , Masanori Kadotani
IPC分类号： H01J37/32 , H01L21/00 , H01L21/683 , H01L21/687 , B23K9/00
CPC分类号： H01L21/6875 , H01J37/32431 , H01J2237/2001 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.
摘要翻译：提供了能够更精确地处理工件的表面的等离子体处理装置。用于在样品和样品台之间提供气体以产生用于处理样品的等离子体的等离子体处理装置包括调节装置，用于改变供给到样品的中心侧的压力和供给到外周的气体的压力作为样品进行的处理。

10. 发明申请

US20060121195A1 Plasma processing apparatus and method for manufacturing electrostatic chuck 审中-公开
标题翻译：等离子体处理装置及其制造方法
公开(公告)号：US20060121195A1
公开(公告)日：2006-06-08
申请号：US11327447
申请日：2006-01-09
申请人： Ryujiro Udo , Masatsugu Arai , Masanori Kadotani
发明人： Ryujiro Udo , Masatsugu Arai , Masanori Kadotani
IPC分类号： C23C14/32 , C23C16/00 , C23C14/00
CPC分类号： H01L21/67069 , C25D11/005 , C25D11/026 , C25D11/04 , H01J37/32082 , H01L21/6831 , H01L21/6833
摘要： An electrostatic chuck comprising an insulating base 6, a plurality of conductive aluminum thin films 4a, 4b deposited on the surface of the base, and alumite films 2a, 2b formed by anodizing the surfaces of the conductive thin films 4a, 4b, wherein the conductive thin films 4a, 4b are each provided with a DC voltage of a different polarity so that a surface chucking a wafer 7 is electrostatically bipolar.
摘要翻译：一种静电卡盘，其包括绝缘基体6，沉积在基底表面上的多个导电铝薄膜4a，4b和通过阳极氧化导电薄膜4a的表面形成的耐酸铝膜2a，如图4b所示，其中导电薄膜4a，4b分别具有不同极性的DC电压，使得夹持晶片7的表面是静电双极的。

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