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1. 发明授权

US06897403B2 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US06897403B2
公开(公告)日：2005-05-24
申请号：US10378601
申请日：2003-03-05
申请人： Ryujiro Udo , Masatsugu Arai , Motohiko Yoshigai , Masanori Kadotani
发明人： Ryujiro Udo , Masatsugu Arai , Motohiko Yoshigai , Masanori Kadotani
IPC分类号： H01J37/32 , H01L21/00 , H01L21/683 , H01L21/687 , B23K9/00
CPC分类号： H01L21/6875 , H01J37/32431 , H01J2237/2001 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.
摘要翻译：提供了能够更精确地处理工件的表面的等离子体处理装置。用于在样品和样品台之间提供气体以产生用于处理样品的等离子体的等离子体处理装置包括调节装置，用于改变供给到样品的中心侧的压力和供给到外周的气体的压力作为样品进行的处理。

2. 发明授权

US06838833B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US06838833B2
公开(公告)日：2005-01-04
申请号：US10670288
申请日：2003-09-26
申请人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
发明人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
IPC分类号： H01J37/32 , H01L21/00 , H01L21/683 , H01J7/24
CPC分类号： H01L21/67109 , H01J37/32724 , H01J2237/2001 , H01L21/6833
摘要： A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.
摘要翻译：一种等离子体处理装置，其具有控制电极块的温度以控制半导体晶片的温度的系统的保持台。电极块在其内侧和外侧设置有至少第一和第二独立温度控制器，并且在第一和第二温度控制器之间的电极块中设置用于抑制热传递的狭缝。

3. 发明授权

US06664738B2 Plasma processing apparatus 有权
公开(公告)号：US06664738B2
公开(公告)日：2003-12-16
申请号：US10083381
申请日：2002-02-27
申请人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
发明人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
IPC分类号： H01J724
CPC分类号： H01L21/67109 , H01J37/32724 , H01J2237/2001 , H01L21/6833
摘要： There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.

4. 发明申请

US20060121195A1 Plasma processing apparatus and method for manufacturing electrostatic chuck 审中-公开
标题翻译：等离子体处理装置及其制造方法
公开(公告)号：US20060121195A1
公开(公告)日：2006-06-08
申请号：US11327447
申请日：2006-01-09
申请人： Ryujiro Udo , Masatsugu Arai , Masanori Kadotani
发明人： Ryujiro Udo , Masatsugu Arai , Masanori Kadotani
IPC分类号： C23C14/32 , C23C16/00 , C23C14/00
CPC分类号： H01L21/67069 , C25D11/005 , C25D11/026 , C25D11/04 , H01J37/32082 , H01L21/6831 , H01L21/6833
摘要： An electrostatic chuck comprising an insulating base 6, a plurality of conductive aluminum thin films 4a, 4b deposited on the surface of the base, and alumite films 2a, 2b formed by anodizing the surfaces of the conductive thin films 4a, 4b, wherein the conductive thin films 4a, 4b are each provided with a DC voltage of a different polarity so that a surface chucking a wafer 7 is electrostatically bipolar.
摘要翻译：一种静电卡盘，其包括绝缘基体6，沉积在基底表面上的多个导电铝薄膜4a，4b和通过阳极氧化导电薄膜4a的表面形成的耐酸铝膜2a，如图4b所示，其中导电薄膜4a，4b分别具有不同极性的DC电压，使得夹持晶片7的表面是静电双极的。

5. 发明申请

US20050045104A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20050045104A1
公开(公告)日：2005-03-03
申请号：US10795350
申请日：2004-03-09
申请人： Masatsugu Arai , Ryujiro Udo , Seiichiro Kanno , Tsuyoshi Yoshida
发明人： Masatsugu Arai , Ryujiro Udo , Seiichiro Kanno , Tsuyoshi Yoshida
IPC分类号： F25B1/00 , H01L21/00 , H01L21/3065 , C23C16/00
CPC分类号： H01L21/67248 , H01J37/32082 , H01J2237/2001 , H01L21/67109
摘要： A plasma processing apparatus having an electrostatic chucking electrode that allows temperature control of a semiconductor wafer during etching process with high efficiency comprises: a holder stage comprising an electrode block S having a dielectric film 4 on the surface thereof and a coolant flow passage 6 therein, in which temperature control is performed while holding a semiconductor wafer W on the dielectric film on the surface of the electrode block; and a cooling cycle 50 including a compressor 52, a condenser 55, an expansion valve 53, a heat exchanger 54 having a heater built therein, and an evaporator, wherein the temperature control of the electrode block S is performed by using a direct-expansion-type temperature controller in which the electrode block S is used as the evaporator of the cooling cycle, and the coolant is directly circulated and expanded inside the electrode block.
摘要翻译：一种具有静电夹持电极的等离子体处理装置，其能够高效率地进行蚀刻处理时的半导体晶片的温度控制，包括：保持台，其具有在其表面具有电介质膜4的电极块S和冷却剂流路6，在将半导体晶片W保持在电极块的表面上的电介质膜上的同时进行温度控制; 以及包括压缩机52，冷凝器55，膨胀阀53，内置加热器的热交换器54和蒸发器的冷却循环50，其中，电极块S的温度控制通过使用直接膨胀型温度控制器，其中电极块S用作冷却循环的蒸发器，并且冷却剂在电极块内直接循环和膨胀。

6. 发明申请

US20060042757A1 Wafer processing apparatus capable of controlling wafer temperature 审中-公开
标题翻译：能够控制晶片温度的晶片处理装置
公开(公告)号：US20060042757A1
公开(公告)日：2006-03-02
申请号：US10927095
申请日：2004-08-27
申请人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
发明人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
IPC分类号： C23F1/00
CPC分类号： H01L21/67248 , H01J37/32935 , H01J2237/2001 , H01L21/67109
摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.
摘要翻译：在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理可以通过执行所选择的处理来减少批次内的晶片温度变化。所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

7. 发明申请

US20080017107A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20080017107A1
公开(公告)日：2008-01-24
申请号：US11798646
申请日：2007-05-15
申请人： Masatsugu Arai , Ryujiro Udo , Seiichiro Kanno , Tsuyoshi Yoshida
发明人： Masatsugu Arai , Ryujiro Udo , Seiichiro Kanno , Tsuyoshi Yoshida
IPC分类号： C23C16/00
CPC分类号： H01L21/67248 , H01J37/32082 , H01J2237/2001 , H01L21/67109
摘要： A plasma processing apparatus having an electrostatic chucking electrode that allows temperature control of a semiconductor wafer during etching process with high efficiency comprises: a holder stage comprising an electrode block S having a dielectric film 4 on the surface thereof and a coolant flow passage 6 therein, in which temperature control is performed while holding a semiconductor wafer W on the dielectric film on the surface of the electrode block; and a cooling cycle 50 including a compressor 52, a condenser 55, an expansion valve 53, a heat exchanger 54 having a heater built therein, and an evaporator, wherein the temperature control of the electrode block S is performed by using a direct-expansion-type temperature controller in which the electrode block S is used as the evaporator of the cooling cycle, and the coolant is directly circulated and expanded inside the electrode block.
摘要翻译：一种具有静电夹持电极的等离子体处理装置，其能够高效率地进行蚀刻处理时的半导体晶片的温度控制，包括：保持台，其具有在其表面具有电介质膜4的电极块S和冷却剂流路6，在将半导体晶片W保持在电极块的表面上的电介质膜上的同时进行温度控制; 以及包括压缩机52，冷凝器55，膨胀阀53，内置加热器的热交换器54和蒸发器的冷却循环50，其中，电极块S的温度控制通过使用直接膨胀型温度控制器，其中电极块S用作冷却循环的蒸发器，并且冷却剂在电极块内直接循环和膨胀。

8. 发明申请

US20070240825A1 Wafer processing apparatus capable of controlling wafer temperature 审中-公开
标题翻译：能够控制晶片温度的晶片处理装置
公开(公告)号：US20070240825A1
公开(公告)日：2007-10-18
申请号：US11812289
申请日：2007-06-18
申请人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
发明人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
IPC分类号： H01L21/306
CPC分类号： H01L21/67248 , H01J37/32935 , H01J2237/2001 , H01L21/67109
摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.
摘要翻译：在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理可以通过执行所选择的处理来减少批次内的晶片温度变化。所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

9. 发明授权

US06812725B2 Semiconductor processing apparatus and wafer sensor module 失效
标题翻译：半导体处理装置和晶片传感器模块
公开(公告)号：US06812725B2
公开(公告)日：2004-11-02
申请号：US10083255
申请日：2002-02-27
申请人： Ryujiro Udo , Masatsugu Arai , Manabu Edamura
发明人： Ryujiro Udo , Masatsugu Arai , Manabu Edamura
IPC分类号： G01R3100
CPC分类号： G01R31/2862
摘要： A semiconductor processing apparatus for processing a semiconductor in a processing chamber separated from the air wherein the processing chamber contains a wafer stage on which there is positioned a wafer sensor module equipped with sensor probes, each sensor probe capable of detecting at least one of electric current, voltage and temperature of an article to be processed and placed on the wafer sensor module, which is carried into the processing chamber by a transporting means for the article to be processed, and detected values by the sensor probes being converted to optical signals and led to outside of the processing chamber, can optimize conditions for processing the article easily and in a short time without lowering throughput.
摘要翻译：一种用于处理与空气分离的处理室中的半导体的半导体处理装置，其中所述处理室包含晶片台，所述晶片台配置有配备有传感器探针的晶片传感器模块，每个传感器探针能够检测电流中的至少一个待处理物品的电压和温度，并将其放置在通过待处理物品的输送装置输送到处理室中的晶片传感器模块上，并将传感器探针的检测值转换为光信号并引导在处理室外部，可以在不降低生产能力的情况下，在短时间内优化处理物品的条件。

10. 发明申请

US20070215278A1 Plasma etching apparatus and method for forming inner wall of plasma processing chamber 审中-公开
标题翻译：等离子体蚀刻装置及等离子体处理室内壁形成方法
公开(公告)号：US20070215278A1
公开(公告)日：2007-09-20
申请号：US11367597
申请日：2006-03-06
申请人： Muneo Furuse , Masanori Kadotani , Katsuji Matano , Tadayoshi Kawaguchi , Masatsugu Arai
发明人： Muneo Furuse , Masanori Kadotani , Katsuji Matano , Tadayoshi Kawaguchi , Masatsugu Arai
IPC分类号： H01L21/306
CPC分类号： H01J37/32504 , H01J37/32477
摘要： A plasma etching apparatus is provided which can prevent corrosion of an aluminum substrate constituting an etching processing chamber or an inside component thereof, thereby avoiding a reduction in productivity due to scattering of a sprayed coating. In the plasma etching apparatus, an anodic oxide film is disposed between a ceramic sprayed coating with excellent resistance to plasma, and the etching processing chamber and the inside component thereof made of aluminum alloy. The anodic oxide film has a thickness of 5 μm or less to have heat resistance.
摘要翻译：提供一种等离子体蚀刻装置，其可以防止构成蚀刻处理室或其内部组分的铝基板的腐蚀，从而避免由于喷涂涂层的飞散而导致的生产率降低。在等离子体蚀刻装置中，阳极氧化膜设置在耐等离子体性优异的陶瓷喷涂涂层之间，蚀刻处理室及其内部由铝合金制成。阳极氧化膜的厚度为5μm以下，具有耐热性。

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