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    • 1. 发明授权
    • Single crystal of nitride and process for preparing the same
    • 单晶氮化物及其制备方法
    • US6001748A
    • 1999-12-14
    • US868971
    • 1997-06-04
    • Motoyuki TanakaKouichi Sogabe
    • Motoyuki TanakaKouichi Sogabe
    • C30B23/00C30B23/02C30B29/38H01L21/31
    • C30B23/02C30B29/38
    • A single crystal of a nitride having a length of not less than 10 mm, a width of not less than 10 mm and a thickness of not less than 300 .mu.m, or having a length of not less than 20 mm and a diameter of not less than 10 .mu.m. In the production of the single crystal, either a mixed powder composed of a nitride powder and an oxide powder or an amorphous nitride powder is provided as a source material powder, the source material powder is heated in a nitrogen atmosphere or in a nitrogen atmosphere containing hydrogen and/or carbon at a temperature below the sublimation temperature or melting temperature of the nitride to decompose and vaporize the nitride powder, and the decomposed and vaporized component is subjected to crystal growth from the vapor phase on a substrate. The nitride single crystal is useful as a bulk material for heat sinks, electric and electronic components, such as semiconductors, optical components, and components of electric equipment and office automation equipment.
    • 长度不小于10mm,宽度不小于10mm,厚度不小于300μm,长度不小于20mm,直径不大于90mm的氮化物单晶 小于10亩。 在单晶的制造中,提供由氮化物粉末和氧化物粉末组成的混合粉末或非晶氮化物粉末作为源材料粉末,将源材料粉末在氮气氛或氮气氛中加热, 氢和/或碳,在低于氮化物的升华温度或熔融温度的温度下分解和蒸发氮化物粉末,并且将分解和汽化的组分从衬底上的气相中进行晶体生长。 氮化物单晶可用作散热器,电子和电子部件如半导体,光学部件以及电气设备和办公自动化设备的部件的散装材料。
    • 2. 发明授权
    • Group III-V nitride semiconductor device
    • III-V族氮化物半导体器件
    • US5909036A
    • 1999-06-01
    • US881126
    • 1997-06-24
    • Motoyuki TanakaKouichi Sogabe
    • Motoyuki TanakaKouichi Sogabe
    • H01L33/12H01L33/16H01L33/32H01S5/00H01S5/323H01L33/00
    • H01S5/32341H01L33/0075
    • A semiconductor device comprising single crystal films consisting of at least one III-V nitride selected from the group consisting of gallium nitride, aluminum nitride, boron nitride, indium nitride, and single-crystalline alloys of these nitrides, the single crystal films being provided on a single crystal substrate of aluminum nitride either directly or through a low-temperature growth buffer layer of at least one III-V nitride. This semiconductor device is useful as a short-wavelength light emitting device capable of conducting continuous oscillation or a diode which is operated at a high temperature. The AlN single crystal substrate is matched in lattice constant and coefficient of thermal expansion with the single crystal film of a III-V nitride and the single crystal films is grown with good crystallinity on the substrate.
    • 一种包括由选自氮化镓,氮化铝,氮化硼,氮化铟和这些氮化物的单晶合金中的至少一种III-V族氮化物构成的单晶膜的半导体器件,单晶膜设置在 直接或通过至少一种III-V族氮化物的低温生长缓冲层的氮化铝单晶衬底。 该半导体器件可用作能够进行连续振荡的短波长发光器件或在高温下工作的二极管。 AlN单晶衬底的晶格常数和热膨胀系数与III-V族氮化物的单晶膜匹配,并且在衬底上生长具有良好结晶度的单晶膜。
    • 6. 发明授权
    • Aluminum nitride sintered body and method of producing the same
    • 氮化铝烧结体及其制造方法
    • US5482905A
    • 1996-01-09
    • US178642
    • 1994-01-05
    • Seiji NakahataTakahiro MatsuuraKouichi SogabeAkira Yamakawa
    • Seiji NakahataTakahiro MatsuuraKouichi SogabeAkira Yamakawa
    • C04B35/581C04B35/58
    • C04B35/581
    • An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein the 3 axes a, b and c of the unit lattice of the crystal are defined such that the ratio b/a of the lengths of the axes b and a is 1.000 near the center of the crystal grain and lies within the range 0.997-1.003 in the vicinity of the grain boundary phase. Aluminum nitride sintered body is produced by sintering a molded body of a raw material powder having aluminum and nitrogen as its principal components at a temperature of 1700.degree.-1900.degree. C. in a non-oxidizing atmosphere having a partial pressure of carbon monoxide or carbon of not more than 200 ppm and then cooling the sintered body to 1500.degree. C. or a lower temperature at a rate of 5.degree. C./min or less. The aluminum nitride sintered body has a greatly improved thermal conductivity and, therefore, is suitable for heat slingers, substrates or the like for semiconductor devices.
    • 一种氮化铝烧结体,其包含属于纤锌矿六方晶系的氮化铝晶体,其中晶体的单位晶格的3轴a,b和c被定义为使得轴b和a的长度的比率b / a 在晶粒中心附近为1.000,位于晶界相附近的0.997-1.003范围内。 氮化铝烧结体通过在具有一氧化碳或碳分压的非氧化性气氛中,在1700〜1900℃的温度下烧结以铝和氮为主要成分的原料粉末的成型体 不超过200ppm,然后以5℃/分钟以下的速度将烧结体冷却至1500℃或更低温度。 氮化铝烧结体具有大大提高的导热性,因此适用于半导体器件的热引脚,基板等。