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1. 发明公开

US20230246756A1 DOWNLINK SCHEMES FOR A COOPERATIVE USER EQUIPMENT WITH JOINT BASEBAND PROCESSING 审中-公开
公开(公告)号：US20230246756A1
公开(公告)日：2023-08-03
申请号：US18001376
申请日：2020-08-24
申请人： Mostafa Khoshnevisan , Aleksandar Damnjanovic , Xiaoxia Zhang , Tao Luo , Jing Sun , Fang Yuan , Yitao Chen , Juan Montojo , Rajat Prakash , QUALCOMM Incorporated
发明人： Mostafa Khoshnevisan , Aleksandar Damnjanovic , Xiaoxia Zhang , Tao Luo , Jing Sun , Fang Yuan , Yitao Chen , Juan Montojo , Rajat Prakash
IPC分类号： H04L5/00 , H04W8/22
CPC分类号： H04L5/0035 , H04W8/22 , H04L5/0091
摘要： Downlink schemes are disclosed for a cooperative user equipment (UE) with joint baseband processing. UEs may establish a cooperative UE unit with one or more neighboring UEs, where one of the UEs operates as the primary UE. The participating UEs of the cooperative UE unit determine a downlink transmission scheme for the cooperative transmissions from a serving base station and receive cooperative transmissions of one or more transport blocks from the serving base station according to the downlink transmission scheme. The secondary UEs of the cooperative UE unit generate and transmit cooperative process data to the primary UE, where the cooperative process data is based on the receipt of the cooperative transmissions by the secondary UEs. The primary UE processes its received cooperative transmission along with the cooperative process data to decode the one or more transport blocks. Other aspects and features are also claimed and described.

2. 发明授权

US08958246B2 Vertically foldable memory array structure 有权
标题翻译：垂直可折叠存储器阵列结构
公开(公告)号：US08958246B2
公开(公告)日：2015-02-17
申请号：US13520155
申请日：2011-06-27
申请人： Liyang Pan , Fang Yuan
发明人： Liyang Pan , Fang Yuan
IPC分类号： G11C11/34 , H01L27/088 , H01L29/792 , G11C5/02 , G11C5/06 , G11C8/14 , G11C16/04 , H01L27/06 , H01L27/115
CPC分类号： H01L29/792 , G11C5/02 , G11C5/063 , G11C8/14 , G11C16/0466 , G11C16/0483 , H01L27/0688 , H01L27/11582 , H01L29/7926
摘要： A vertically foldable memory array structure is provided, comprising: a memory module distributed in columns and rows, comprising: a drain selection transistor; a bottom connecting line and a source selection transistor; and a plurality of memory cell transistors connected between the drain selection transistor and the bottom connecting line and between the source selection transistor and the bottom connecting line, a drain of each drain selection transistor is connected to a bit line, a drain of a drain selection transistor in a Mth vertically foldable memory module in a Nth column and a source of a source selection transistor in a (M−1)th memory module in a (N+1)th column are connected to a same bit line, gates of the drain selection transistors and the source selection transistors in all the memory modules in the Nth column are connected to a same drain selection line and a same source selection line.
摘要翻译：提供了一种可垂直折叠的存储器阵列结构，包括：以列和行分布的存储器模块，包括：漏极选择晶体管; 底部连接线和源极选择晶体管; 连接在漏极选择晶体管和底部连接线之间以及源极选择晶体管和底部连接线之间的多个存储单元晶体管，每个漏极选择晶体管的漏极连接到位线，漏极选择的漏极在第N列中的第M个垂直折叠存储器模块中的晶体管和第（N + 1）列中的第（M-1）个存储器模块中的源选择晶体管的源极连接到相同的位线，第N列的所有存储器模块中的漏极选择晶体管和源极选择晶体管连接到相同的漏极选择线和相同的源极选择线。

3. 发明申请

US20140050990A1 Gel Electrolyte, Preparing Method Thereof, Gel Electrolyte Battery, and Preparing Method Thereof 审中-公开
标题翻译：凝胶电解质及其制备方法，凝胶电解质电池及其制备方法
公开(公告)号：US20140050990A1
公开(公告)日：2014-02-20
申请号：US13641705
申请日：2011-02-16
申请人： Fang Yuan , Martin William Payne , Xiaodong Wu
发明人： Fang Yuan , Martin William Payne , Xiaodong Wu
IPC分类号： H01M10/0565 , H01M10/058 , H01M10/0525
CPC分类号： H01M10/058 , H01G11/56 , H01M2/361 , H01M10/0525 , H01M10/0565 , H01M2300/0085 , Y02E60/13 , Y10T29/49108
摘要： A gel electrolyte, a preparing method thereof, a gel electrolyte battery and a preparing method thereof are provided. The gel electrolyte comprises a non-aqueous solvent and a gel constituent, wherein the non-aqueous solvent comprises lithium salt, and the gel constituent comprises polyethylene glycol compounds with unsaturated double bonds, ester monomers with unsaturated double bonds, silane coupling agents and thermal initiators. The preparing method of the gel electrolyte battery includes preparing non-aqueous solvent containing lithium salts; dividing the prepared non-aqueous solvent containing lithium salts into two parts; adding initiators to one part to obtain a gel electrolyte part A; adding monomers and coupling agents to the other part to obtain a gel electrolyte part B; mixing the gel electrolyte part A and the gel electrolyte part B to obtain a gel electrolyte; injecting the obtained gel electrolyte into a dried battery and allowing the battery standing for 16 to 24 hours so as to sufficiently distribute the gel electrolyte inside the battery, and finally in-situ thermally polymerizing the gel electrolyte.
摘要翻译：提供凝胶电解质，其制备方法，凝胶电解质电池及其制备方法。凝胶电解质包含非水溶剂和凝胶成分，其中非水溶剂包括锂盐，凝胶组分包含具有不饱和双键的聚乙二醇化合物，具有不饱和双键的酯单体，硅烷偶联剂和热引发剂。凝胶电解质电池的制备方法包括制备含有锂盐的非水溶剂; 将制备的含有锂盐的非水溶剂分为两部分; 将引发剂加入一部分以获得凝胶电解质部分A; 向其他部分加入单体和偶联剂以获得凝胶电解质部分B; 混合凝胶电解质部分A和凝胶电解质部分B以获得凝胶电解质; 将获得的凝胶电解质注入干燥的电池中，并使电池静置16至24小时，以充分分配电池内的凝胶电解质，最后使凝胶电解质原位热聚合。

4. 发明申请

US20130207067A1 VERTICAL SELECTION TRANSISTOR, MEMORY CELL, AND THREE-DIMENSIONAL MEMORY ARRAY STRUCTURE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：垂直选择晶体管，存储单元和三维存储器阵列结构及其制造方法
公开(公告)号：US20130207067A1
公开(公告)日：2013-08-15
申请号：US13520166
申请日：2012-03-12
申请人： Liyang Pan , Fang Yuan
发明人： Liyang Pan , Fang Yuan
IPC分类号： H01L27/24 , H01L21/70 , H01L29/78
CPC分类号： H01L27/24 , H01L21/70 , H01L27/2445 , H01L27/2481 , H01L29/04 , H01L29/66348 , H01L29/7394 , H01L29/7397 , H01L29/7827 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/1675
摘要： The present disclosure discloses a vertical selection transistor, a memory cell having the vertical selection transistor, a three-dimensional memory array structure and a method for fabricating the three-dimensional memory array structure. The vertical selection transistor comprises: an upper electrode; a lower electrode; a first semiconductor layer, a second semiconductor layer, a third semiconductor layer and a fourth semiconductor layer vertically stacked between the lower electrode and the upper electrode; and a gate stack formed on a side of the second semiconductor layer, in which the first semiconductor layer and the third semiconductor layer are first type doped layers, the second semiconductor layer and the fourth semiconductor layer are second type doped layers, and a doping concentration of the second semiconductor layer is lower than that of the first semiconductor layer or that of the third semiconductor layer respectively.
摘要翻译：本公开公开了一种垂直选择晶体管，具有垂直选择晶体管的存储单元，三维存储器阵列结构和用于制造三维存储器阵列结构的方法。垂直选择晶体管包括：上电极; 下电极第一半导体层，第二半导体层，第三半导体层和垂直堆叠在下电极和上电极之间的第四半导体层; 以及形成在所述第二半导体层的一侧的栅堆叠，其中所述第一半导体层和所述第三半导体层是第一掺杂层，所述第二半导体层和所述第四半导体层是第二掺杂层，并且掺杂浓度分别低于第一半导体层或第三半导体层的厚度。

5. 发明授权

US08484132B1 Systems and methods for segmented risk scoring of identity fraud 有权
标题翻译：身份欺诈的分段风险评分的系统和方法
公开(公告)号：US08484132B1
公开(公告)日：2013-07-09
申请号：US13491786
申请日：2012-06-08
申请人： James Alan Christiansen , Fang Yuan , Michael James Woodberry , Brent Wayne Sorenson , Jeffrey Allen Feinstein
发明人： James Alan Christiansen , Fang Yuan , Michael James Woodberry , Brent Wayne Sorenson , Jeffrey Allen Feinstein
IPC分类号： G06Q40/00
CPC分类号： G06Q40/00
摘要： Certain embodiments of the invention may include systems, methods, and apparatus for determining fraud risk associated with a credit application. According to an exemplary embodiment of the invention, a method is provided for receiving applicant information associated with the application; searching one or more consumer identity repositories for prior usage of the applicant information; generating a plurality of identity characteristics corresponding to the prior usage of the applicant information; assigning the application to one of a plurality of segments based at least in part on the searching; scoring the application with a predictive scoring model to determine a risk score based at least in part on the identity characteristics; determining identity fraud risk types associated with the application; and outputting the risk score and one or more indicators of the determined identity fraud risk types.
摘要翻译：本发明的某些实施例可以包括用于确定与信用申请相关联的欺诈风险的系统，方法和装置。根据本发明的示例性实施例，提供了一种用于接收与应用相关联的申请人信息的方法; 搜索一个或多个消费者身份存储库以便先前使用申请人信息; 产生与申请人信息的先前使用相对应的多个身份特征; 至少部分地基于所述搜索将所述应用分配给多个片段中的一个片段; 用预测评分模型对应用程序进行评分，以至少部分地基于身份特征来确定风险评分; 确定与申请相关的身份欺诈风险类型; 并输出所确定的身份欺诈风险类型的风险分数和一个或多个指标。

6. 外观设计

USD648794S1 White board eraser 有权
标题翻译：白板橡皮擦
公开(公告)号：USD648794S1
公开(公告)日：2011-11-15
申请号：US29390903
申请日：2011-04-29
申请人： Fang Yuan
设计人： Fang Yuan

7. 外观设计

USD647568S1 Card holder 有权
公开(公告)号：USD647568S1
公开(公告)日：2011-10-25
申请号：US29382414
申请日：2011-01-03
申请人： Fang Yuan
设计人： Fang Yuan

8. 发明授权

US06816767B2 Vehicle collision decision apparatus 失效
标题翻译：车辆碰撞判定装置
公开(公告)号：US06816767B2
公开(公告)日：2004-11-09
申请号：US10329203
申请日：2002-12-24
申请人： Masatoshi Hayasaka , Fang Yuan , Yukio Hiruta , Tsutomu Fukui
发明人： Masatoshi Hayasaka , Fang Yuan , Yukio Hiruta , Tsutomu Fukui
IPC分类号： B60R2132
CPC分类号： B60R21/01332 , B60R21/0132 , B60R21/01542 , B60R2021/01315 , B60R2021/01322
摘要： A vehicle collision decision apparatus determines whether or not an occupant-protecting apparatus should be started in a collision by an occupant moving characteristics determining device. Also, whether or not the collision continues is determined in an acceleration change determining section. A determining threshold for a frequency component which indicates damage to the vehicle which is calculated in a frequency component calculating device is selected. The occupant-protecting apparatus is activated appropriately by monitoring the damage to the vehicle in the frequency component determining device by using the frequency component. By doing this, a vehicle collision decision apparatus which can determine the condition in the vehicle collision appropriately is provided.

9. 外观设计

USD678942S1 Pen 有权
公开(公告)号：USD678942S1
公开(公告)日：2013-03-26
申请号：US29400015
申请日：2011-08-22
申请人： Fang Yuan
设计人： Fang Yuan

10. 外观设计

USD673216S1 Pen 有权
公开(公告)号：USD673216S1
公开(公告)日：2012-12-25
申请号：US29396506
申请日：2011-06-30
申请人： Fang Yuan
设计人： Fang Yuan

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