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1. 发明授权

US5676751A Rapid cooling of CZ silicon crystal growth system 失效
标题翻译：快速冷却CZ硅晶体生长系统
公开(公告)号：US5676751A
公开(公告)日：1997-10-14
申请号：US589491
申请日：1996-01-22
申请人： Mohsen Banan , Harold W. Korb , Kyong-Min Kim
发明人： Mohsen Banan , Harold W. Korb , Kyong-Min Kim
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B25/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1032
摘要： A Czochralski method for producing monocrystals wherein a single crystal silicon rod is pulled from a silicon melt contained in a crucible within a chamber. After pulling the single crystal silicon rod from a silicon melt in a chamber, the chamber is cooled by flowing a gas having a thermal conductivity of at least about 55.times.10.sup.-5 g.cal./(sec..multidot.cm.sup.2)(.degree.C./cm) at 800.degree. K into the chamber. The preferred cooling gas is a helium-containing gas.
摘要翻译：一种用于制造单晶的切克劳斯基法，其中单晶硅棒从容纳在腔室内的坩埚中的硅熔体中拉出。在室中从硅熔体拉出单晶硅棒之后，通过使具有至少约55×10 -5 g.cal ./（sec×cm 2）（℃/ cm）的热导率的气体流动来冷却该室）在800°K进入腔室。优选的冷却气体是含氦气体。

2. 发明授权

US5445679A Cleaning of polycrystalline silicon for charging into a Czochralski growing process 失效
标题翻译：清洗多晶硅充电到切克劳斯基生长过程
公开(公告)号：US5445679A
公开(公告)日：1995-08-29
申请号：US996037
申请日：1992-12-23
申请人： Richard L. Hansen , Mohsen Banan
发明人： Richard L. Hansen , Mohsen Banan
IPC分类号： B08B7/00 , C30B15/00
CPC分类号： C30B29/06 , B08B7/0035 , C30B15/00
摘要： A process for cleaning organic contaminants from the surface of polycrystalline silicon. In the process, the surface of the polycrystalline silicon is exposed to an oxidizing medium which directly oxidizes the organic contaminant. The oxidized contaminants are then carried away from the polycrystalline silicon surface.
摘要翻译：从多晶硅表面清洗有机污染物的方法。在此过程中，多晶硅的表面暴露于直接氧化有机污染物的氧化介质中。然后将氧化的污染物从多晶硅表面带走。

3. 发明申请

US20070169683A1 NITROGEN-DOPED SILICON SUBSTANTIALLY FREE OF OXIDATION INDUCED STACKING FAULTS 有权
标题翻译：氮化硅不含氧化诱发堆积不良
公开(公告)号：US20070169683A1
公开(公告)日：2007-07-26
申请号：US11623142
申请日：2007-01-15
申请人： Hiroyo Haga , Takaaki Aoshima , Mohsen Banan
发明人： Hiroyo Haga , Takaaki Aoshima , Mohsen Banan
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B19/00
CPC分类号： C30B15/203 , C30B15/206 , C30B29/06
摘要： The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, and are nitrogen doped to stabilize oxygen precipitation nuclei therein.
摘要翻译：本发明涉及一种形成单晶硅锭或晶片的方法，该方法包含轴向对称区域，其中空位是主要的固有点缺陷，其基本上没有氧化诱导的堆垛层错，并且是氮掺杂以稳定氧沉淀核其中。

4. 发明授权

US07182809B2 Nitrogen-doped silicon substantially free of oxidation induced stacking faults 失效
标题翻译：基本上不含氧化诱导的堆垛层错的氮掺杂硅
公开(公告)号：US07182809B2
公开(公告)日：2007-02-27
申请号：US10380806
申请日：2001-08-30
申请人： Hiroyo Haga , Takaaki Aoshima , Mohsen Banan
发明人： Hiroyo Haga , Takaaki Aoshima , Mohsen Banan
IPC分类号： C30B15/04
CPC分类号： C30B15/203 , C30B15/206 , C30B29/06
摘要： A single crystal silicon, ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect, is substantially free of oxidation induced stacking faults and is nitrogen doped to stabilize oxygen precipitation nuclei therein, and a process for the preparation thereof.
摘要翻译：包含其中空位是主要固有点缺陷的轴对称区域的单晶硅，晶锭或晶片形式基本上没有氧化诱导的堆垛层错，并且是氮掺杂以稳定氧析出核的方法，的制备。

5. 发明授权

US07404856B2 Nitrogen-doped silicon substantially free of oxidation induced stacking faults 有权
标题翻译：基本上不含氧化诱导的堆垛层错的氮掺杂硅
公开(公告)号：US07404856B2
公开(公告)日：2008-07-29
申请号：US11623142
申请日：2007-01-15
申请人： Hiroyo Haga , Takaaki Aoshima , Mohsen Banan
发明人： Hiroyo Haga , Takaaki Aoshima , Mohsen Banan
IPC分类号： C30B15/20
CPC分类号： C30B15/203 , C30B15/206 , C30B29/06
摘要： The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, and are nitrogen doped to stabilize oxygen precipitation nuclei therein.
摘要翻译：本发明涉及一种形成单晶硅锭或晶片的方法，该方法包含轴向对称区域，其中空位是主要的固有点缺陷，其基本上没有氧化诱导的堆垛层错，并且是氮掺杂以稳定氧沉淀核其中。

6. 发明授权

US07201800B2 Process for making silicon wafers with stabilized oxygen precipitate nucleation centers 失效
标题翻译：制造具有稳定氧的硅晶片的工艺沉淀成核中心
公开(公告)号：US07201800B2
公开(公告)日：2007-04-10
申请号：US10963340
申请日：2004-10-12
申请人： Luciano Mule'Stagno , Jeffrey L. Libbert , Richard J. Phillips , Milind Kulkarni , Mohsen Banan , Stephen J. Brunkhorst
发明人： Luciano Mule'Stagno , Jeffrey L. Libbert , Richard J. Phillips , Milind Kulkarni , Mohsen Banan , Stephen J. Brunkhorst
IPC分类号： C30B15/20
CPC分类号： H01L21/3226 , H01L21/3225 , Y10T428/21
摘要： A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon, and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing, such as an epitaxial deposition process, while maintaining the ability to dissolve any grown-in nucleation centers.
摘要翻译：将受控氧析出行为赋予单晶硅晶片的方法。具体地，在形成氧沉淀物之前，晶片本体包括掺杂剂稳定的氧沉淀成核中心。掺杂剂选自氮和碳组成，掺杂剂的浓度足以使氧沉淀成核中心承受诸如外延沉积工艺之类的热处理，同时保持溶解任何生长的能力成核中心。

7. 发明授权

US06579362B2 Heat shield assembly for crystal puller 失效
公开(公告)号：US06579362B2
公开(公告)日：2003-06-17
申请号：US09815508
申请日：2001-03-23
申请人： Lee W. Ferry , Richard G. Schrenker , Mohsen Banan
发明人： Lee W. Ferry , Richard G. Schrenker , Mohsen Banan
IPC分类号： C30B1520
CPC分类号： C30B15/14 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068
摘要： A heat shield assembly for use in a crystal puller has an outer reflector interposed between the ingot and the crucible as the ingot is pulled from the molten source material. A cooling shield is interposed between the ingot and the outer reflector whereby the cooling shield is exposed to heat radiated from the ingot for increasing the rate at which the ingot is cooled, thereby increasing the axial temperature gradient of the ingot. In a further embodiment, an inner shield panel is disposed generally intermediate the cooling shield and the ingot in radially spaced relationship with the cooling shield and is constructed of a material substantially transparent to radiant heat from the ingot.

8. 发明授权

US06312517B1 Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method 失效
标题翻译：多级砷掺杂工艺，通过切克劳斯基法生长的硅晶体中实现低电阻率
公开(公告)号：US06312517B1
公开(公告)日：2001-11-06
申请号：US09568751
申请日：2000-05-11
申请人： Mohsen Banan , Milind Kulkarni , Charles Whitmer, II
发明人： Mohsen Banan , Milind Kulkarni , Charles Whitmer, II
IPC分类号： C30B1504
CPC分类号： C30B29/06 , C30B15/04
摘要： A method of lowering the resistivity of resultant silicon crystal from a Czochralski crystal growing process by adding arsenic dopant to the melt in multiple stages.
摘要翻译：一种通过在多级阶段向熔体中添加砷掺杂剂来从切克劳斯基晶体生长工艺降低所得硅晶体的电阻率的方法。

9. 发明授权

US07217320B2 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults 有权
标题翻译：具有基本上不含氧化诱导的堆垛层错的空位主导的核的低缺陷密度的硅
公开(公告)号：US07217320B2
公开(公告)日：2007-05-15
申请号：US11005987
申请日：2004-12-07
申请人： Chang Bum Kim , Steven L. Kimbel , Jeffrey L. Libbert , Mohsen Banan
发明人： Chang Bum Kim , Steven L. Kimbel , Jeffrey L. Libbert , Mohsen Banan
IPC分类号： C03B15/20
CPC分类号： C30B15/203 , C30B15/20 , C30B15/206 , C30B29/06 , Y10T428/21
摘要： The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, and (iii) a cooling rate of the crystal from solidification to about 750° C., in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterized in that v, G0 and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.
摘要翻译：本发明涉及一种制备单晶硅锭的方法，以及由此产生的锭或晶片。该方法包括控制（i）生长速度v，（ii）平均轴向温度梯度G 0 O 3，和（iii）晶体从凝固到约750℃的冷却速率。，以便形成具有第一轴向对称区域的区段，该第一轴向对称区域从该晶锭的侧表面径向向内延伸，其中硅自间隙是主要的固有点缺陷，以及第二轴向对称区域，其从第一并朝向锭的中心轴线。该方法的特征在于控制v，G 0和冷却速率以防止在第一区域中形成凝聚的固有点缺陷，同时进一步控制冷却速率以限制氧化物的形成在对晶片进行氧化处理（其他适用于形成这样的故障的氧化处理）之后，在来自该段的晶片中引起堆垛层错。

10. 发明授权

US07132091B2 Single crystal silicon ingot having a high arsenic concentration 有权
标题翻译：具有高砷浓度的单晶硅锭
公开(公告)号：US07132091B2
公开(公告)日：2006-11-07
申请号：US10256759
申请日：2002-09-27
申请人： Milind Kulkarni , Mohsen Banan , Christopher V. Luers
发明人： Milind Kulkarni , Mohsen Banan , Christopher V. Luers
IPC分类号： C01B33/00 , C30B15/04
CPC分类号： C30B29/06 , C30B15/04
摘要： A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 Ω·cm.
摘要翻译：具有恒定直径部分的单晶硅锭，其含有砷掺杂剂原子，其浓度导致硅的电阻率小于约0.003Ω·cm。

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