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1. 发明授权

US06503322B1 Electrical resistance heater and method for crystal growing apparatus 失效
标题翻译：电阻加热器和晶体生长装置的方法
公开(公告)号：US06503322B1
公开(公告)日：2003-01-07
申请号：US09691994
申请日：2000-10-19
申请人： Richard G. Schrenker , William L. Luter
发明人： Richard G. Schrenker , William L. Luter
IPC分类号： C30B1514
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1016
摘要： An electrical resistance heater for use in a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises a heating element sized and shaped for placement in a housing of the crystal puller generally above a crucible in spaced relationship with the outer surface of the growing ingot for radiating heat to the ingot as it is pulled upward in the housing relative to the molten silicon. The heating element has an upper end and a lower end. The lower end of the heating element is disposed substantially closer to the molten silicon than the upper end when the heating element is placed in the housing. The heating element is constructed such that the heating power output generated by the heating element gradually increases from the lower end to the upper end of the heating element.
摘要翻译：用于根据切克劳斯基方法生长单晶硅锭的晶体拉拔器中使用的电阻加热器包括加热元件，其尺寸和形状适于放置在通常在坩埚上方的晶体拉出器的壳体内，与坩埚的外表面间隔开生长的铸锭用于在铸锭相对于熔融硅在壳体中向上拉动时将热量散发到铸锭。加热元件具有上端和下端。当加热元件放置在壳体中时，加热元件的下端基本上比上端更靠近熔融硅。加热元件被构造成使得由加热元件产生的加热功率输出从加热元件的下端逐渐增加到上端。

2. 发明授权

US5935328A Apparatus for use in crystal pulling 失效
标题翻译：用于晶体拉制的装置
公开(公告)号：US5935328A
公开(公告)日：1999-08-10
申请号：US978334
申请日：1997-11-25
申请人： Carl F. Cherko , Harold Korb , Richard G. Schrenker , Dick S. Williams
发明人： Carl F. Cherko , Harold Korb , Richard G. Schrenker , Dick S. Williams
IPC分类号： C30B15/30 , C30B29/06 , C30B35/00
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： An apparatus for pulling a monocrystalline ingot from a semiconductor source material located within a growth chamber as the ingot is grown on a seed crystal according to the Czochralski method. The apparatus comprises a drum, a chuck constructed for holding the seed crystal and the ingot, and a cable having a first end connected to the drum, a second end connected to the chuck and a portion wound around the drum. The portion of the cable wound around the drum exerts a normal force on a circumferential surface of the drum corresponding to the tension in the cable. The drum and cable interact to produce a friction force resisting sliding movement of the cable relative to the drum in a direction lengthwise of the cable. The drum is capable of unwinding cable from the drum thereby to let out the cable and lower the chuck, and capable of winding the cable around the drum thereby to reel in the cable and draw the chuck upwardly. The chuck has a mass selected to exert a pre-tension on the cable prior to growing the ingot such that the increase in the friction on the portion of the cable wound around the drum as the cable is reeled in to pull the ingot from the source material is at least equal to the increase of the weight of the ingot as it grows on the seed crystal from the molten source material.
摘要翻译：根据Czochralski方法，在晶种上生长晶锭时，从位于生长室内的半导体源材料拉出单晶锭的装置。该装置包括一个滚筒，一个用于保持晶种和锭块的卡盘，以及一个连接到滚筒的第一端的电缆，连接到卡盘的第二端和缠绕在滚筒上的部分。卷绕在滚筒周围的电缆的部分对应于电缆中的张力在鼓的圆周表面上施加法向力。鼓和电缆相互作用以产生抵抗电缆相对于滚筒在电缆纵向方向上的滑动运动的摩擦力。滚筒能够从滚筒中退绕电缆，从而排出电缆并降低卡盘，并且能够将电缆卷绕在滚筒周围，从而卷绕在电缆中并向上拉动卡盘。卡盘具有选择的质量，以在生长锭之前在电缆上施加预张力，使得当电缆被卷入时绕线缠绕在电缆上的电缆的部分上的摩擦增加，以从源拉出锭材料至少等于锭从熔融源材料在晶种上生长时其重量的增加。

3. 发明授权

US6093913A Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections 失效
标题翻译：用于晶体生长装置的电加热器，与下部相比，上部部分产生增加的加热功率
公开(公告)号：US6093913A
公开(公告)日：2000-07-25
申请号：US92391
申请日：1998-06-05
申请人： Richard G. Schrenker , William L. Luter
发明人： Richard G. Schrenker , William L. Luter
IPC分类号： C30B29/06 , C30B15/14 , C30B35/00
CPC分类号： C30B15/14 , Y10T117/1068 , Y10T117/1088
摘要： An electrical resistance heater for use in a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises a heating element sized and shaped for disposition in the housing of the crystal puller around the crucible for applying heat to the crucible and silicon therein. The heating element includes heating segments connected together in an electric circuit. The segments have upper and lower sections and are arranged relative to each other so that when disposed around the crucible containing molten silicon the upper sections are disposed generally above a horizontal plane including the surface of the molten silicon and the lower sections are disposed generally below the horizontal plane. The upper sections are constructed to generate more heating power than the lower sections thereby to reduce a temperature gradient between the molten silicon at its surface and the ingot just above the surface of the molten silicon. The upper sections have a thickness substantially equal to the thickness of the lower sections and have a width substantially less than the width of the lower sections. The cross-sectional area of the upper sections is everywhere less than the cross-sectional area of the lower sections.
摘要翻译：用于根据切克劳斯基法生长单晶硅锭的晶体拉拔器中使用的电阻加热器包括加热元件，该加热元件的尺寸和形状用于配置在坩埚周围的晶体拉出器的外壳中，用于将坩埚和硅加热。加热元件包括在电路中连接在一起的加热段。这些段具有上部和下部并且相对于彼此布置，使得当围绕包含熔融硅的坩埚设置时，上部部分大致设置在包括熔融硅的表面的水平面的上方，并且下部通常设置在水平面。上部构造成产生比下部更多的加热功率，从而降低其表面处的熔融硅和正好在熔融硅表面之上的晶锭之间的温度梯度。上部的厚度基本上等于下部的厚度，并且具有基本上小于下部的宽度的宽度。上部的横截面面积小于下部的横截面面积。

4. 发明授权

US09222196B2 Directional solidification furnace for reducing melt contamination and reducing wafer contamination 有权
标题翻译：定向凝固炉，用于减少熔体污染并减少晶圆污染
公开(公告)号：US09222196B2
公开(公告)日：2015-12-29
申请号：US13354014
申请日：2012-01-19
申请人： Steven L. Kimbel , Jihong (John) Chen , Richard G. Schrenker , Lee W. Ferry
发明人： Steven L. Kimbel , Jihong (John) Chen , Richard G. Schrenker , Lee W. Ferry
IPC分类号： C30B11/02 , C30B11/00 , C30B28/06 , C30B29/06
CPC分类号： C30B11/002 , C30B11/02 , C30B28/06 , C30B29/06 , Y10T117/1092
摘要： A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.
摘要翻译：定向凝固炉包括用于保持熔融硅的坩埚和覆盖坩埚的盖，并在熔融硅上形成外壳。坩埚还包括在盖子中的入口，用于在熔融硅上方引入惰性气体以抑制熔融硅的污染。

5. 发明申请

US20120186299A1 Directional Solidification Furnace For Reducing Melt Contamination And Reducing Wafer Contamination 有权
标题翻译：定向凝固炉用于减少熔体污染和减少晶片污染
公开(公告)号：US20120186299A1
公开(公告)日：2012-07-26
申请号：US13354014
申请日：2012-01-19
申请人： Steven L. Kimbel , Jihong (John) Chen , Richard G. Schrenker , Lee W. Ferry
发明人： Steven L. Kimbel , Jihong (John) Chen , Richard G. Schrenker , Lee W. Ferry
IPC分类号： C03B19/02 , C03B33/02
CPC分类号： C30B11/002 , C30B11/02 , C30B28/06 , C30B29/06 , Y10T117/1092
摘要： A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.
摘要翻译：定向凝固炉包括用于保持熔融硅的坩埚和覆盖坩埚的盖，并在熔融硅上形成外壳。坩埚还包括在盖子中的入口，用于在熔融硅上方引入惰性气体以抑制熔融硅的污染。

6. 发明申请

US20090320743A1 Controlling a Melt-Solid Interface Shape of a Growing Silicon Crystal Using an Unbalanced Magnetic Field and Iso-Rotation 有权
标题翻译：使用不平衡磁场和等旋转控制生长硅晶体的熔体 - 固体界面形状
公开(公告)号：US20090320743A1
公开(公告)日：2009-12-31
申请号：US12493766
申请日：2009-06-29
申请人： Hariprasad Sreedharamurthy , Milind S. Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
发明人： Hariprasad Sreedharamurthy , Milind S. Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
IPC分类号： C30B30/04
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , Y10T117/1032
摘要： A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.
摘要翻译：描述了一种用于生长有利于控制熔体 - 固体界面的形状的硅晶体的系统。晶体生长系统包括加热的坩埚，其包括根据切克劳斯基（Czochralski）工艺生长单晶锭的半导体熔体。铸锭在从熔体拉出的晶种上生长。该方法包括向熔体施加不平衡的紧密磁场，并且在从熔体中拉出晶锭的同时使晶锭和坩埚旋转。

7. 发明授权

US5840120A Apparatus for controlling nucleation of oxygen precipitates in silicon crystals 失效
标题翻译：用于控制硅晶体中氧沉淀物的成核的装置
公开(公告)号：US5840120A
公开(公告)日：1998-11-24
申请号：US589612
申请日：1996-01-22
申请人： Kyong-Min Kim , Roger W. Shaw , Sadasivam Chandrasekhar , Richard G. Schrenker
发明人： Kyong-Min Kim , Roger W. Shaw , Sadasivam Chandrasekhar , Richard G. Schrenker
IPC分类号： C30B15/00 , C30B15/14 , C30B35/00
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206
摘要： An apparatus for producing a silicon single crystal grown by the Czochralski process. The apparatus includes a hollow growth chamber, a quartz crucible disposed within the growth chamber, and a pulling member for pulling a growing silicon single crystal upward from a silicon melt retained in the crucible. A crystal chamber above the growth chamber receives the crystal as it is pulled. A joining member joins the growth chamber and the crystal chamber. A first heating member defining a passageway through which the crystal is pulled, for preventing formation of oxygen precipitate nucleation centers in the crystal until the crystal has been pulled through the passageway, is disposed at least partially within the growth chamber. A second heating member defining a passageway through which the crystal is pulled, for controlling the formation of the oxygen precipitate nucleation centers in the crystal, is disposed within the crystal chamber.
摘要翻译：一种用于生产通过切克劳斯基（Czochralski）工艺生长的硅单晶的设备。该设备包括中空生长室，设置在生长室内的石英坩埚，以及用于从保留在坩埚中的硅熔体向上拉出生长的硅单晶的拉动构件。生长室上方的晶体室在被拉动时接收晶体。连接构件连接生长室和晶体室。第一加热构件限定了通过其被拉动的晶体的通道，用于防止在晶体中形成氧沉淀成核中心，直到晶体被拉过通道，至少部分地设置在生长室内。限定晶体被拉动的通道的第二加热构件设置在晶体室内，用于控制晶体中氧沉淀成核中心的形成。

8. 发明授权

US08398765B2 Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation 有权
标题翻译：使用不平衡磁场和等旋转控制生长中的硅晶体的熔体 - 固体界面形状
公开(公告)号：US08398765B2
公开(公告)日：2013-03-19
申请号：US12493766
申请日：2009-06-29
申请人： Hariprasad Sreedharamurthy , Milind Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
发明人： Hariprasad Sreedharamurthy , Milind Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
IPC分类号： C30B15/02
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , Y10T117/1032
摘要： A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.
摘要翻译：描述了一种用于生长有利于控制熔体 - 固体界面的形状的硅晶体的系统。晶体生长系统包括加热的坩埚，其包括根据切克劳斯基（Czochralski）工艺生长单晶锭的半导体熔体。铸锭在从熔体拉出的晶种上生长。该方法包括向熔体施加不平衡的紧密磁场，并且在从熔体中拉出晶锭的同时使晶锭和坩埚旋转。

9. 发明申请

US20100074825A1 DIRECTIONAL SOLIDIFICATION FURNACE FOR REDUCING MELT CONTAMINATION AND REDUCING WAFER CONTAMINATION 有权
标题翻译：用于减少熔体污染和减少水污染的方向性固化炉
公开(公告)号：US20100074825A1
公开(公告)日：2010-03-25
申请号：US12563124
申请日：2009-09-19
申请人： Steven L. Kimbel , Jihong (John) Chen , Richard G. Schrenker , Lee W. Ferry
发明人： Steven L. Kimbel , Jihong (John) Chen , Richard G. Schrenker , Lee W. Ferry
IPC分类号： C01B33/02 , B01J19/06
CPC分类号： C30B11/002 , C30B11/02 , C30B28/06 , C30B29/06 , Y10T117/1092
摘要： A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.
摘要翻译：定向凝固炉包括用于保持熔融硅的坩埚和覆盖坩埚的盖，并在熔融硅上形成外壳。坩埚还包括在盖子中的入口，用于在熔融硅上方引入惰性气体以抑制熔融硅的污染。

10. 发明授权

US06797062B2 Heat shield assembly for a crystal puller 失效
标题翻译：用于晶体拉拔器的隔热罩组件
公开(公告)号：US06797062B2
公开(公告)日：2004-09-28
申请号：US10252027
申请日：2002-09-20
申请人： Lee W. Ferry , Richard G. Schrenker , Hariprasad Sreedharamurthy
发明人： Lee W. Ferry , Richard G. Schrenker , Hariprasad Sreedharamurthy
IPC分类号： C30B3500
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A heat shield assembly is disclosed for use in a crystal puller for growing a monocrystalline ingot from molten semiconductor source material. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten source material. In one aspect, the heat shield assembly includes a multi-sectioned outer shield and a multi-sectioned inner shield. The sections of at least one of the inner and outer shields may be releasably connected to one another so that, in the event a section is damaged, the sections may be separated to allow replacement with an undamaged section. In another aspect the heat shield assembly includes an upper section and a lower section extending generally downward from the upper section toward the molten material. The lower section has a height equal to at least about 33% of a height of the heat shield assembly.
摘要翻译：公开了一种用于晶体拉出器中用于从熔融半导体源材料生长单晶锭的隔热组件。隔热组件具有中心开口，该中心开口的大小和形状用于在铸锭从熔融源材料中拉出时包围锭块。一方面，隔热罩组件包括多段外护罩和多分段内护罩。内屏蔽件和外屏蔽件中的至少一个的部分可以可释放地彼此连接，使得在部件损坏的情况下，这些部件可以被分离以允许用未损坏的部分进行更换。在另一方面，隔热组件包括从上部向熔融材料大体向下延伸的上部和下部。下部的高度等于隔热组件的高度的至少约33％。

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