专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07638853B2 Solid state imaging device, method for fabricating the same, and camera 有权
标题翻译：固态成像装置及其制造方法及相机
公开(公告)号：US07638853B2
公开(公告)日：2009-12-29
申请号：US11826570
申请日：2007-07-17
申请人： Mitsuyoshi Mori , Takumi Yamaguchi , Toru Okino
发明人： Mitsuyoshi Mori , Takumi Yamaguchi , Toru Okino
IPC分类号： H01L31/062 , H01L31/113 , H01L27/146 , H01L21/00 , H01L21/336 , H01L21/76 , H01L21/762
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14683
摘要： A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.
摘要翻译：固态成像装置包括：成像区域，形成在由硅制成的基板的上部，具有光电转换部分，光电转换部分的电荷累积区域是第一导电类型; 形成在所述基板的至少一部分中以围绕所述光电转换部的器件隔离区; 以及形成在通过器件隔离区域与光电转换区域电隔离的成像区域的一部分上的MOS晶体管。器件隔离区域的宽度在其下部比其上部小，并且固态成像器件还包括围绕器件隔离区域并且是与第一导电类型相反的第二导电类型的暗电流抑制区域。

2. 发明申请

US20080029796A1 Solid state imaging device, method for fabricating the same, and camera 有权
标题翻译：固态成像装置及其制造方法及相机
公开(公告)号：US20080029796A1
公开(公告)日：2008-02-07
申请号：US11826570
申请日：2007-07-17
申请人： Mitsuyoshi Mori , Takumi Yamaguchi , Toru Okino
发明人： Mitsuyoshi Mori , Takumi Yamaguchi , Toru Okino
IPC分类号： H01L31/113
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14683
摘要： A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.
摘要翻译：固态成像装置包括：成像区域，形成在由硅制成的基板的上部，具有光电转换部分，光电转换部分的电荷累积区域是第一导电类型; 形成在所述基板的至少一部分中以围绕所述光电转换部的器件隔离区; 以及形成在通过器件隔离区域与光电转换区域电隔离的成像区域的一部分上的MOS晶体管。器件隔离区域的宽度在其下部比其上部小，并且固态成像器件还包括围绕器件隔离区域并且是与第一导电类型相反的第二导电类型的暗电流抑制区域。

3. 发明授权

US08680640B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08680640B2
公开(公告)日：2014-03-25
申请号：US13462895
申请日：2012-05-03
申请人： Mitsuyoshi Mori , Toru Okino , Yutaka Hirose , Yoshihisa Kato
发明人： Mitsuyoshi Mori , Toru Okino , Yutaka Hirose , Yoshihisa Kato
IPC分类号： H01L27/148
CPC分类号： H01L27/14645 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/1463 , H01L27/14632 , H01L27/1464
摘要： A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.
摘要翻译：固态成像装置包括半导体衬底; 多个n型光电转换部，形成在半导体衬底的上部并且以矩阵形式布置; 输出电路，其形成在作为半导体衬底的一个表面的电荷检测表面上，并检测存储在光电转换部中的电荷; 多个形成在输出电路下的p型隔离扩散层，并且包括与各个光电转换部分相邻的高浓度p型层; 以及形成在作为与半导体衬底的一个表面相对的另一表面的光入射表面上并且透射具有不同波长的光的滤色器。各个光电转换部分的形状对应于滤色器，并且根据构成隔离扩散层的高浓度p型层而不同。

4. 发明申请

US20100220228A1 SOLID-STATE IMAGE SENSOR 有权
标题翻译：固态图像传感器
公开(公告)号：US20100220228A1
公开(公告)日：2010-09-02
申请号：US12602747
申请日：2009-06-02
申请人： Yusuke Otake , Mitsuyoshi Mori , Shinzou Kouyama , Toru Okino
发明人： Yusuke Otake , Mitsuyoshi Mori , Shinzou Kouyama , Toru Okino
IPC分类号： H04N5/335
CPC分类号： H04N9/045 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14647 , H04N5/332
摘要： A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.
摘要翻译：固态图像传感器包括：半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。第一光电转换区域32的深部的一部分33延伸穿过隔离区域25，到达第二光电转换区域35的下方。

5. 发明授权

US08592874B2 Solid state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08592874B2
公开(公告)日：2013-11-26
申请号：US13198240
申请日：2011-08-04
申请人： Mitsuyoshi Mori , Toru Okino , Yusuke Otake , Hitomi Fujiwara
发明人： Mitsuyoshi Mori , Kazuo Fujiwara , Toru Okino , Yusuke Otake
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L27/1463 , H01L27/14654
摘要： In each of pixels 10 arranged in an array pattern, an insulating isolation part 22 electrically isolates adjacent photoelectric conversion elements 11, and the photoelectric conversion element 11 and an amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. A low concentration first isolation diffusion layer 23 is formed below the insulating isolation part 22 constituting the first region A, and a high concentration second isolation diffusion layer 24 and a low concentration first isolation diffusion layer 23 are formed below the insulating isolation part 22 constituting the second region B. A source/drain region of the amplifier transistor 14 in the second region B is formed in a well region 25 formed simultaneously with the second isolation diffusion layer 24.
摘要翻译：在排列成阵列图形的像素10的每一个中，绝缘隔离部分22电隔离相邻的光电转换元件11和光电转换元件11和放大器晶体管14.绝缘隔离部分22构成光电转换未布置放大器晶体管14的元件11和布置放大器晶体管14的光电转换元件11之间的第二区域B. 在构成第一区域A的绝缘隔离部分22的下方形成低浓度第一隔离扩散层23，在绝缘隔离部分22的下方形成高浓度第二隔离扩散层24和低浓度第一隔离扩散层23 第二区域B中的放大器晶体管14的源极/漏极区域形成在与第二隔离扩散层24同时形成的阱区域25中。

6. 发明申请

US20090039387A1 SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：固态成像元件及其制造方法
公开(公告)号：US20090039387A1
公开(公告)日：2009-02-12
申请号：US12180920
申请日：2008-07-28
申请人： Toru Okino , Mitsuyoshi Mori
发明人： Toru Okino , Mitsuyoshi Mori
IPC分类号： H01L31/0336 , H01L31/18
CPC分类号： H01L27/14603 , H01L27/1464 , H01L27/14643
摘要： A solid-state imaging element includes a layered substrate made of silicon and composed of, for example, an N-type substrate, a P-type layer, and an N-type layer. In the layered substrate, an imaging region in which a plurality of pixels are arranged and a peripheral circuit region are formed. A recess reaching the reverse face of the P-type layer is formed in a reverse face portion of the layered substrate in the imaging region, and a reflective film is formed on at least the inner face of the recess. Light is reflected on the reverse face and the obverse face of the layered substrate.
摘要翻译：固态成像元件包括由例如N型衬底，P型层和N型层构成的由硅构成的层状衬底。在分层基板中，形成有多个像素的成像区域和外围电路区域。在成像区域中的层叠基板的反面部形成有到达P型层的反面的凹部，在凹部的至少内面形成有反射膜。光在层叠基板的反面和正面反射。

7. 发明授权

US08471351B2 Solid state imaging device including source/drain region of amplifier transistor being disposed in isolation diffusion layer 有权
标题翻译：包括放大晶体管的源极/漏极区域的固态成像装置设置在隔离扩散层中
公开(公告)号：US08471351B2
公开(公告)日：2013-06-25
申请号：US13198451
申请日：2011-08-04
申请人： Mitsuyoshi Mori , Toru Okino , Yusuke Otake , Hitomi Fujiwara
发明人： Mitsuyoshi Mori , Toru Okino , Yusuke Otake , Kazuo Fujiwara
IPC分类号： H01L27/148 , H01L27/146 , H01L21/00
CPC分类号： H01L27/1463 , H01L21/266 , H01L27/14609 , H01L27/14689
摘要： Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier transistor 14 for outputting the transferred charges to an output line. An insulating isolation part 22 isolates the adjacent photoelectric conversion elements 11, and isolates the photoelectric conversion element 11 and the amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. First and second isolation diffusion layers 23 and 24 are formed below the insulating isolation part 22, and the second isolation diffusion layer 24 is wider than the first isolation diffusion layer 23 in the first region A.
摘要翻译：排列成阵列图案的像素10中的每一个包括光电转换元件11，用于将电荷转移到浮动扩散层12的转移晶体管13和用于将转移的电荷输出到输出线的放大器晶体管14。绝缘隔离部分22隔离相邻的光电转换元件11，并隔离光电转换元件11和放大晶体管14.隔离隔离部分22构成放大晶体管14未布置的光电转换元件11之间的第一区域A 以及布置有放大晶体管14的光电转换元件11之间的第二区域B. 第一和第二隔离扩散层23和24形成在绝缘隔离部22的下方，第二隔离扩散层24比第一区域A中的第一隔离扩散层23宽。

8. 发明授权

US08354693B2 Solid state imaging device and method for fabricating the same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US08354693B2
公开(公告)日：2013-01-15
申请号：US12035340
申请日：2008-02-21
申请人： Mitsuyoshi Mori , Toru Okino , Daisuke Ueda , Toshinobu Matsuno
发明人： Mitsuyoshi Mori , Toru Okino , Daisuke Ueda , Toshinobu Matsuno
IPC分类号： H01L31/0336
CPC分类号： H01L27/14689 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.
摘要翻译：固态成像装置包括具有形成在半导体基板上的光电转换元件的像素。光电转换元件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层，形成在第一半导体层上并在其间形成接合部; 形成在所述第二半导体层上并且具有比所述第二半导体层更小的带隙能量的第三半导体层，所述第三半导体层由单晶半导体制成并且含有杂质; 以及覆盖第三半导体层的侧表面和上表面的第一导电类型的第四半导体层。提供第四半导体层可以减少在黑暗条件下流动的电流。

9. 发明申请

US20110291162A1 SOLID STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20110291162A1
公开(公告)日：2011-12-01
申请号：US13198451
申请日：2011-08-04
申请人： Mitsuyoshi MORI , Toru Okino , Yusuke Otake , Kazuo Fujiwara , Hitomi Fujiwara
发明人： Mitsuyoshi MORI , Toru Okino , Yusuke Otake , Kazuo Fujiwara , Hitomi Fujiwara
IPC分类号： H01L27/148
CPC分类号： H01L27/1463 , H01L21/266 , H01L27/14609 , H01L27/14689
摘要： Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier transistor 14 for outputting the transferred charges to an output line. An insulating isolation part 22 isolates the adjacent photoelectric conversion elements 11, and isolates the photoelectric conversion element 11 and the amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. First and second isolation diffusion layers 23 and 24 are formed below the insulating isolation part 22, and the second isolation diffusion layer 24 is wider than the first isolation diffusion layer 23 in the first region A.
摘要翻译：排列成阵列图案的像素10中的每一个包括光电转换元件11，用于将电荷转移到浮动扩散层12的转移晶体管13和用于将转移的电荷输出到输出线的放大器晶体管14。绝缘隔离部分22隔离相邻的光电转换元件11，并隔离光电转换元件11和放大晶体管14.隔离隔离部分22构成放大晶体管14未布置的光电转换元件11之间的第一区域A 以及布置有放大晶体管14的光电转换元件11之间的第二区域B. 第一和第二隔离扩散层23和24形成在绝缘隔离部22的下方，第二隔离扩散层24比第一区域A中的第一隔离扩散层23宽。

10. 发明申请

US20100327332A1 SOLID STATE IMAGING DEVICE 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20100327332A1
公开(公告)日：2010-12-30
申请号：US12667997
申请日：2009-06-29
申请人： Toru Okino , Mitsuyoshi Mori , Kazuo Jujiwara
发明人： Toru Okino , Mitsuyoshi Mori , Kazuo Jujiwara
IPC分类号： H01L31/112
CPC分类号： H04N5/335 , H01L27/14603 , H01L27/1463
摘要： A solid state imaging device having a pixel area in which a plurality of light receiving elements are arranged, and a peripheral circuit area adjacent to the pixel area includes: a semiconductor substrate 102 of a first conductivity type or a second conductivity type; a first semiconductor layer 103 of the first conductivity type provided on the semiconductor substrate 102, where the first semiconductor layer 103 is lower in impurity concentration than the semiconductor substrate 102; first impurity regions 104 of the second conductivity type provided in upper portions of the first semiconductor layer 103 in the pixel area; second impurity regions 105 of the first conductivity type provided between the plurality of the first impurity regions 104 adjacent to each other in the pixel area and in the peripheral circuit area; and third impurity regions 106 of the first conductivity type expanded from a position directly under the second impurity regions 105 toward the semiconductor substrate 102 in the pixel area.
摘要翻译：具有多个光接收元件的像素区域的固态成像器件和与像素区域相邻的外围电路区域包括：第一导电类型或第二导电类型的半导体衬底102; 设置在半导体衬底102上的第一导电类型的第一半导体层103，其中第一半导体层103的杂质浓度低于半导体衬底102; 设置在像素区域中的第一半导体层103的上部的第二导电类型的第一杂质区域104; 第一导电类型的第二杂质区域105设置在像素区域和周边电路区域中彼此相邻的多个第一杂质区域104之间; 并且第一导电类型的第三杂质区域106从第二杂质区域105正下方的位置朝向像素区域中的半导体衬底102扩展。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式