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    • 1. 发明申请
    • Solid state imaging device, method for fabricating the same, and camera
    • 固态成像装置及其制造方法及相机
    • US20080029796A1
    • 2008-02-07
    • US11826570
    • 2007-07-17
    • Mitsuyoshi MoriTakumi YamaguchiToru Okino
    • Mitsuyoshi MoriTakumi YamaguchiToru Okino
    • H01L31/113
    • H01L27/14643H01L27/1463H01L27/14683
    • A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.
    • 固态成像装置包括:成像区域,形成在由硅制成的基板的上部,具有光电转换部分,光电转换部分的电荷累积区域是第一导电类型; 形成在所述基板的至少一部分中以围绕所述光电转换部的器件隔离区; 以及形成在通过器件隔离区域与光电转换区域电隔离的成像区域的一部分上的MOS晶体管。 器件隔离区域的宽度在其下部比其上部小,并且固态成像器件还包括围绕器件隔离区域并且是与第一导电类型相反的第二导电类型的暗电流抑制区域 。
    • 4. 发明授权
    • Solid-state image sensor
    • 固态图像传感器
    • US08243176B2
    • 2012-08-14
    • US12602747
    • 2009-06-02
    • Yusuke OtakeMitsuyoshi MoriShinzou KouyamaToru Okino
    • Yusuke OtakeMitsuyoshi MoriShinzou KouyamaToru Okino
    • H04N3/14H04N5/335
    • H04N9/045H01L27/14621H01L27/14623H01L27/14627H01L27/1463H01L27/14647H04N5/332
    • A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.
    • 固态图像传感器包括:半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。 第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。 与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。 第一光电转换区域32的深部的一部分33延伸穿过隔离区域25,到达第二光电转换区域35的下方。
    • 6. 发明授权
    • Solid state imaging device
    • 固态成像装置
    • US08592874B2
    • 2013-11-26
    • US13198240
    • 2011-08-04
    • Mitsuyoshi MoriToru OkinoYusuke OtakeHitomi Fujiwara
    • Mitsuyoshi MoriKazuo FujiwaraToru OkinoYusuke Otake
    • H01L27/148H01L29/768
    • H01L27/1463H01L27/14654
    • In each of pixels 10 arranged in an array pattern, an insulating isolation part 22 electrically isolates adjacent photoelectric conversion elements 11, and the photoelectric conversion element 11 and an amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. A low concentration first isolation diffusion layer 23 is formed below the insulating isolation part 22 constituting the first region A, and a high concentration second isolation diffusion layer 24 and a low concentration first isolation diffusion layer 23 are formed below the insulating isolation part 22 constituting the second region B. A source/drain region of the amplifier transistor 14 in the second region B is formed in a well region 25 formed simultaneously with the second isolation diffusion layer 24.
    • 在排列成阵列图形的像素10的每一个中,绝缘隔离部分22电隔离相邻的光电转换元件11和光电转换元件11和放大器晶体管14.绝缘隔离部分22构成光电转换 未布置放大器晶体管14的元件11和布置放大器晶体管14的光电转换元件11之间的第二区域B. 在构成第一区域A的绝缘隔离部分22的下方形成低浓度第一隔离扩散层23,在绝缘隔离部分22的下方形成高浓度第二隔离扩散层24和低浓度第一隔离扩散层23 第二区域B中的放大器晶体管14的源极/漏极区域形成在与第二隔离扩散层24同时形成的阱区域25中。
    • 8. 发明授权
    • Solid-state imaging device
    • 固态成像装置
    • US08680640B2
    • 2014-03-25
    • US13462895
    • 2012-05-03
    • Mitsuyoshi MoriToru OkinoYutaka HiroseYoshihisa Kato
    • Mitsuyoshi MoriToru OkinoYutaka HiroseYoshihisa Kato
    • H01L27/148
    • H01L27/14645H01L27/14603H01L27/14609H01L27/14621H01L27/1463H01L27/14632H01L27/1464
    • A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.
    • 固态成像装置包括半导体衬底; 多个n型光电转换部,形成在半导体衬底的上部并且以矩阵形式布置; 输出电路,其形成在作为半导体衬底的一个表面的电荷检测表面上,并检测存储在光电转换部中的电荷; 多个形成在输出电路下的p型隔离扩散层,并且包括与各个光电转换部分相邻的高浓度p型层; 以及形成在作为与半导体衬底的一个表面相对的另一表面的光入射表面上并且透射具有不同波长的光的滤色器。 各个光电转换部分的形状对应于滤色器,并且根据构成隔离扩散层的高浓度p型层而不同。
    • 9. 发明申请
    • SOLID-STATE IMAGE SENSOR
    • 固态图像传感器
    • US20100220228A1
    • 2010-09-02
    • US12602747
    • 2009-06-02
    • Yusuke OtakeMitsuyoshi MoriShinzou KouyamaToru Okino
    • Yusuke OtakeMitsuyoshi MoriShinzou KouyamaToru Okino
    • H04N5/335
    • H04N9/045H01L27/14621H01L27/14623H01L27/14627H01L27/1463H01L27/14647H04N5/332
    • A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.
    • 固态图像传感器包括:半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。 第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。 与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。 第一光电转换区域32的深部的一部分33延伸穿过隔离区域25,到达第二光电转换区域35的下方。