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1. 发明授权

US4778374A Apparatus for forming tampon inserter tip 失效
标题翻译：用于形成棉塞插入器尖端的装置
公开(公告)号：US4778374A
公开(公告)日：1988-10-18
申请号：US126727
申请日：1987-11-30
申请人： Hiroshi Takahashi , Yasutami Muto , Toru Okino
发明人： Hiroshi Takahashi , Yasutami Muto , Toru Okino
IPC分类号： A61F13/20 , A61F13/26 , B29C31/00 , B29C51/18 , B29C57/10 , B29L22/00 , B29L31/00
CPC分类号： A61F13/2085 , B29C31/002 , B29C51/18 , B29C57/10
摘要： An apparatus for continuously and rapidly forming petal-like segments at the tip of a tampon inserter into a hemispherically curved shape. Sets of molds are mounted on a support table on a rotary table turned about a shaft. Each set comprises a heating mold to heat and soften the tip of the tampon inserter and a cooling mold to shape while being cooled the heated and softened tip. The heating and cooling molds are moved by a cam so that either of the two molds is placed above the tampon inserter held in position by a gripper. The gripper comprises a pair of gripper segments that are opened and closed by a cam on the shaft and raised and lowered by another cam on the same shaft. The cams are adapted to release the tampon inserter from the gripper after the tampon inserter has been put first in the heating mold and then in the cooling mold. The tip of the tampon inserter held by the gripper first enters the heating mold to get heated. While the heated tip descends temporarily, the cooling mold is brought to above the tampon inserter. As the tampon inserter rises again, its tip comes in contact with the inner surface of the cooling mold, in which the tip is formed into a hemispherically curved shape while being cooled.
摘要翻译：一种用于连续且快速地将卫生棉条插入器的尖端处的花瓣形节段形成为半球形弯曲形状的装置。一组模具安装在围绕轴转动的旋转台上的支撑台上。每组包括加热和软化棉条插入器的尖端的加热模具和冷却模具以在冷却加热和软化的尖端的同时成形。加热和冷却模具由凸轮移动，使得两个模具中的任一个被置于通过夹持器保持在位置的棉条插入器之上。夹持器包括一对夹持器段，其由轴上的凸轮打开和关闭，并由同一轴上的另一个凸轮升高和降低。在将棉塞插入器首先放入加热模具中然后在冷却模具中之后，凸轮适于将棉塞插入器从夹具中释放。由夹具保持的卫生棉条插入器的尖端首先进入加热模具以加热。当加热的尖端临时下降时，冷却模具被带到卫生栓插入器的上方。当棉塞插入器再次升高时，其尖端与冷却模具的内表面接触，其中尖端在冷却时形成半球形弯曲形状。

2. 发明授权

US08680640B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08680640B2
公开(公告)日：2014-03-25
申请号：US13462895
申请日：2012-05-03
申请人： Mitsuyoshi Mori , Toru Okino , Yutaka Hirose , Yoshihisa Kato
发明人： Mitsuyoshi Mori , Toru Okino , Yutaka Hirose , Yoshihisa Kato
IPC分类号： H01L27/148
CPC分类号： H01L27/14645 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/1463 , H01L27/14632 , H01L27/1464
摘要： A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.
摘要翻译：固态成像装置包括半导体衬底; 多个n型光电转换部，形成在半导体衬底的上部并且以矩阵形式布置; 输出电路，其形成在作为半导体衬底的一个表面的电荷检测表面上，并检测存储在光电转换部中的电荷; 多个形成在输出电路下的p型隔离扩散层，并且包括与各个光电转换部分相邻的高浓度p型层; 以及形成在作为与半导体衬底的一个表面相对的另一表面的光入射表面上并且透射具有不同波长的光的滤色器。各个光电转换部分的形状对应于滤色器，并且根据构成隔离扩散层的高浓度p型层而不同。

3. 发明申请

US20100220228A1 SOLID-STATE IMAGE SENSOR 有权
标题翻译：固态图像传感器
公开(公告)号：US20100220228A1
公开(公告)日：2010-09-02
申请号：US12602747
申请日：2009-06-02
申请人： Yusuke Otake , Mitsuyoshi Mori , Shinzou Kouyama , Toru Okino
发明人： Yusuke Otake , Mitsuyoshi Mori , Shinzou Kouyama , Toru Okino
IPC分类号： H04N5/335
CPC分类号： H04N9/045 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14647 , H04N5/332
摘要： A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.
摘要翻译：固态图像传感器包括：半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。第一光电转换区域32的深部的一部分33延伸穿过隔离区域25，到达第二光电转换区域35的下方。

4. 发明授权

US07638853B2 Solid state imaging device, method for fabricating the same, and camera 有权
标题翻译：固态成像装置及其制造方法及相机
公开(公告)号：US07638853B2
公开(公告)日：2009-12-29
申请号：US11826570
申请日：2007-07-17
申请人： Mitsuyoshi Mori , Takumi Yamaguchi , Toru Okino
发明人： Mitsuyoshi Mori , Takumi Yamaguchi , Toru Okino
IPC分类号： H01L31/062 , H01L31/113 , H01L27/146 , H01L21/00 , H01L21/336 , H01L21/76 , H01L21/762
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14683
摘要： A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.
摘要翻译：固态成像装置包括：成像区域，形成在由硅制成的基板的上部，具有光电转换部分，光电转换部分的电荷累积区域是第一导电类型; 形成在所述基板的至少一部分中以围绕所述光电转换部的器件隔离区; 以及形成在通过器件隔离区域与光电转换区域电隔离的成像区域的一部分上的MOS晶体管。器件隔离区域的宽度在其下部比其上部小，并且固态成像器件还包括围绕器件隔离区域并且是与第一导电类型相反的第二导电类型的暗电流抑制区域。

5. 发明授权

US08471351B2 Solid state imaging device including source/drain region of amplifier transistor being disposed in isolation diffusion layer 有权
标题翻译：包括放大晶体管的源极/漏极区域的固态成像装置设置在隔离扩散层中
公开(公告)号：US08471351B2
公开(公告)日：2013-06-25
申请号：US13198451
申请日：2011-08-04
申请人： Mitsuyoshi Mori , Toru Okino , Yusuke Otake , Hitomi Fujiwara
发明人： Mitsuyoshi Mori , Toru Okino , Yusuke Otake , Kazuo Fujiwara
IPC分类号： H01L27/148 , H01L27/146 , H01L21/00
CPC分类号： H01L27/1463 , H01L21/266 , H01L27/14609 , H01L27/14689
摘要： Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier transistor 14 for outputting the transferred charges to an output line. An insulating isolation part 22 isolates the adjacent photoelectric conversion elements 11, and isolates the photoelectric conversion element 11 and the amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. First and second isolation diffusion layers 23 and 24 are formed below the insulating isolation part 22, and the second isolation diffusion layer 24 is wider than the first isolation diffusion layer 23 in the first region A.
摘要翻译：排列成阵列图案的像素10中的每一个包括光电转换元件11，用于将电荷转移到浮动扩散层12的转移晶体管13和用于将转移的电荷输出到输出线的放大器晶体管14。绝缘隔离部分22隔离相邻的光电转换元件11，并隔离光电转换元件11和放大晶体管14.隔离隔离部分22构成放大晶体管14未布置的光电转换元件11之间的第一区域A 以及布置有放大晶体管14的光电转换元件11之间的第二区域B. 第一和第二隔离扩散层23和24形成在绝缘隔离部22的下方，第二隔离扩散层24比第一区域A中的第一隔离扩散层23宽。

6. 发明授权

US08354693B2 Solid state imaging device and method for fabricating the same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US08354693B2
公开(公告)日：2013-01-15
申请号：US12035340
申请日：2008-02-21
申请人： Mitsuyoshi Mori , Toru Okino , Daisuke Ueda , Toshinobu Matsuno
发明人： Mitsuyoshi Mori , Toru Okino , Daisuke Ueda , Toshinobu Matsuno
IPC分类号： H01L31/0336
CPC分类号： H01L27/14689 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.
摘要翻译：固态成像装置包括具有形成在半导体基板上的光电转换元件的像素。光电转换元件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层，形成在第一半导体层上并在其间形成接合部; 形成在所述第二半导体层上并且具有比所述第二半导体层更小的带隙能量的第三半导体层，所述第三半导体层由单晶半导体制成并且含有杂质; 以及覆盖第三半导体层的侧表面和上表面的第一导电类型的第四半导体层。提供第四半导体层可以减少在黑暗条件下流动的电流。

7. 发明申请

US20120217494A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20120217494A1
公开(公告)日：2012-08-30
申请号：US13462889
申请日：2012-05-03
申请人： TORU OKINO , YOSHIHISA KATO , YUTAKA HIROSE , MITSUYOSHI MORI
发明人： TORU OKINO , YOSHIHISA KATO , YUTAKA HIROSE , MITSUYOSHI MORI
IPC分类号： H01L31/0296 , H01L31/0232
CPC分类号： H01L27/14625 , H01L27/1464 , H01L27/14665 , H01L27/14685
摘要： Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.
摘要翻译：本发明的固体摄像装置是在半导体基板的第一面侧形成有配线层的背照明型固体摄像元件，以及光接收从第一表面侧相反的第二表面侧入射的光的光接收部分，其中由具有自发极化的材料形成的自发偏振膜形成在光接收部分的光接收表面上。因此，能够在受光部的受光面上形成空穴积聚层，能够抑制暗电流。

8. 发明申请

US20120211851A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20120211851A1
公开(公告)日：2012-08-23
申请号：US13462895
申请日：2012-05-03
申请人： MITSUYOSHI MORI , TORU OKINO , YUTAKA HIROSE , YOSHIHISA KATO
发明人： MITSUYOSHI MORI , TORU OKINO , YUTAKA HIROSE , YOSHIHISA KATO
IPC分类号： H01L31/0232
CPC分类号： H01L27/14645 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/1463 , H01L27/14632 , H01L27/1464
摘要： A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.
摘要翻译：固态成像装置包括半导体衬底; 多个n型光电转换部，形成在半导体衬底的上部并且以矩阵形式布置; 输出电路，其形成在作为半导体衬底的一个表面的电荷检测表面上，并检测存储在光电转换部中的电荷; 多个形成在输出电路下的p型隔离扩散层，并且包括与各个光电转换部分相邻的高浓度p型层; 以及形成在作为与半导体衬底的一个表面相对的另一表面的光入射表面上并且透射具有不同波长的光的滤色器。各个光电转换部分的形状对应于滤色器，并且根据构成隔离扩散层的高浓度p型层而不同。

9. 发明申请

US20110291162A1 SOLID STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20110291162A1
公开(公告)日：2011-12-01
申请号：US13198451
申请日：2011-08-04
申请人： Mitsuyoshi MORI , Toru Okino , Yusuke Otake , Kazuo Fujiwara , Hitomi Fujiwara
发明人： Mitsuyoshi MORI , Toru Okino , Yusuke Otake , Kazuo Fujiwara , Hitomi Fujiwara
IPC分类号： H01L27/148
CPC分类号： H01L27/1463 , H01L21/266 , H01L27/14609 , H01L27/14689
摘要： Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier transistor 14 for outputting the transferred charges to an output line. An insulating isolation part 22 isolates the adjacent photoelectric conversion elements 11, and isolates the photoelectric conversion element 11 and the amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. First and second isolation diffusion layers 23 and 24 are formed below the insulating isolation part 22, and the second isolation diffusion layer 24 is wider than the first isolation diffusion layer 23 in the first region A.
摘要翻译：排列成阵列图案的像素10中的每一个包括光电转换元件11，用于将电荷转移到浮动扩散层12的转移晶体管13和用于将转移的电荷输出到输出线的放大器晶体管14。绝缘隔离部分22隔离相邻的光电转换元件11，并隔离光电转换元件11和放大晶体管14.隔离隔离部分22构成放大晶体管14未布置的光电转换元件11之间的第一区域A 以及布置有放大晶体管14的光电转换元件11之间的第二区域B. 第一和第二隔离扩散层23和24形成在绝缘隔离部22的下方，第二隔离扩散层24比第一区域A中的第一隔离扩散层23宽。

10. 发明申请

US20100327332A1 SOLID STATE IMAGING DEVICE 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20100327332A1
公开(公告)日：2010-12-30
申请号：US12667997
申请日：2009-06-29
申请人： Toru Okino , Mitsuyoshi Mori , Kazuo Jujiwara
发明人： Toru Okino , Mitsuyoshi Mori , Kazuo Jujiwara
IPC分类号： H01L31/112
CPC分类号： H04N5/335 , H01L27/14603 , H01L27/1463
摘要： A solid state imaging device having a pixel area in which a plurality of light receiving elements are arranged, and a peripheral circuit area adjacent to the pixel area includes: a semiconductor substrate 102 of a first conductivity type or a second conductivity type; a first semiconductor layer 103 of the first conductivity type provided on the semiconductor substrate 102, where the first semiconductor layer 103 is lower in impurity concentration than the semiconductor substrate 102; first impurity regions 104 of the second conductivity type provided in upper portions of the first semiconductor layer 103 in the pixel area; second impurity regions 105 of the first conductivity type provided between the plurality of the first impurity regions 104 adjacent to each other in the pixel area and in the peripheral circuit area; and third impurity regions 106 of the first conductivity type expanded from a position directly under the second impurity regions 105 toward the semiconductor substrate 102 in the pixel area.
摘要翻译：具有多个光接收元件的像素区域的固态成像器件和与像素区域相邻的外围电路区域包括：第一导电类型或第二导电类型的半导体衬底102; 设置在半导体衬底102上的第一导电类型的第一半导体层103，其中第一半导体层103的杂质浓度低于半导体衬底102; 设置在像素区域中的第一半导体层103的上部的第二导电类型的第一杂质区域104; 第一导电类型的第二杂质区域105设置在像素区域和周边电路区域中彼此相邻的多个第一杂质区域104之间; 并且第一导电类型的第三杂质区域106从第二杂质区域105正下方的位置朝向像素区域中的半导体衬底102扩展。

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