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    • 4. 发明授权
    • Manufacturing method of organic semiconductor device
    • 有机半导体器件的制造方法
    • US08202759B2
    • 2012-06-19
    • US12863538
    • 2009-01-21
    • Ken TominoMasanao MatsuokaTomomi SuzukiHiroki Maeda
    • Ken TominoMasanao MatsuokaTomomi SuzukiHiroki Maeda
    • H01L51/40
    • H01L51/0013H01L51/003H01L51/0076H01L51/0545H01L51/0558
    • The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.
    • 本发明提供了一种有机半导体器件的制造方法,其包括通过在液晶有机半导体材料的液晶相变温度下的热转印将有机半导体层转印到栅极绝缘层的步骤,并且该步骤用途: 包括具有分离性质的分离基板的有机半导体层转移基板和形成在分型基板上并含有液晶有机半导体材料的有机半导体层; 以及用于形成有机半导体器件的衬底,包括衬底,形成在衬底上的栅极电极和形成为覆盖栅电极并具有能够使液晶有机半导体材料在表面上对准的取向性能的栅极绝缘层 的栅极绝缘层。
    • 7. 发明申请
    • MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR DEVICE
    • 有机半导体器件的制造方法
    • US20110053313A1
    • 2011-03-03
    • US12863538
    • 2009-01-21
    • Ken TominoMasanao MatsuokaTomomi SuzukiHiroki Maeda
    • Ken TominoMasanao MatsuokaTomomi SuzukiHiroki Maeda
    • H01L51/10
    • H01L51/0013H01L51/003H01L51/0076H01L51/0545H01L51/0558
    • The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.
    • 本发明提供了一种有机半导体器件的制造方法,其包括通过在液晶有机半导体材料的液晶相变温度下的热转印将有机半导体层转印到栅极绝缘层的步骤,并且该步骤用途: 包括具有分离性质的分离基板的有机半导体层转移基板和形成在分型基板上并含有液晶有机半导体材料的有机半导体层; 以及用于形成有机半导体器件的衬底,包括衬底,形成在衬底上的栅极电极和形成为覆盖栅电极并具有能够使液晶有机半导体材料在表面上对准的取向性能的栅极绝缘层 的栅极绝缘层。