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1. 发明授权

US07605405B2 Semiconductor light emitting device having first and second resins 有权
标题翻译：具有第一和第二树脂的半导体发光器件
公开(公告)号：US07605405B2
公开(公告)日：2009-10-20
申请号：US11076138
申请日：2005-03-10
申请人： Mitsunori Harada , Kazuhiko Ueno , Takashi Ebisutani , Masao Aoyama , Kaori Tachibana
发明人： Mitsunori Harada , Kazuhiko Ueno , Takashi Ebisutani , Masao Aoyama , Kaori Tachibana
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/507 , H01L33/56 , H01L2933/0041
摘要： A semiconductor light emitting device and method of manufacturing the same can provide a light source that has less variation in color and brightness and can reduce radiation of light that is possibly harmful to humans. The device can include a casing that has a first cavity having an oblique surface with a reflective surface formed thereon and a second cavity having an almost vertical side. A reflective frame having an oblique surface with a third reflective surface formed thereon can be formed on the casing. A semiconductor light emitting element can be mounted on the bottom in the first cavity. A first resin composed of a light-transmissive resin can be filled in the first cavity and then cured. Further, a second resin containing a fluorescent material dispersed in a light-transmissive resin can be filled in the second cavity and then cured while the casing is turned upside down to form a high-density fluorescent material layer near the surface of the second resin.
摘要翻译：半导体发光器件及其制造方法可以提供颜色和亮度变化较小的光源，并且可以减少可能对人类有害的光的辐射。该装置可以包括具有第一空腔的壳体，该第一空腔具有形成在其上的反射表面的倾斜表面和具有几乎垂直侧的第二腔。可以在壳体上形成具有其上形成有第三反射表面的倾斜表面的反射框架。半导体发光元件可以安装在第一腔中的底部上。由透光性树脂构成的第一树脂可以填充到第一空腔中，然后固化。此外，包含分散在透光树脂中的荧光材料的第二树脂可以填充在第二空腔中，然后在壳体翻转的同时固化，以在第二树脂的表面附近形成高密度荧光材料层。

2. 发明申请

US20050205876A1 Semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050205876A1
公开(公告)日：2005-09-22
申请号：US11076138
申请日：2005-03-10
申请人： Mitsunori Harada , Kazuhiko Ueno , Takashi Ebisutani , Masao Aoyama , Kaori Tachibana
发明人： Mitsunori Harada , Kazuhiko Ueno , Takashi Ebisutani , Masao Aoyama , Kaori Tachibana
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/60
CPC分类号： H01L33/44 , H01L33/507 , H01L33/56 , H01L2933/0041
摘要： A semiconductor light emitting device and method of manufacturing the same can provide a light source that has less variation in color and brightness and can reduce radiation of light that is possibly harmful to humans. The device can include a casing that has a first cavity having an oblique surface with a reflective surface formed thereon and a second cavity having an almost vertical side. A reflective frame having an oblique surface with a third reflective surface formed thereon can be formed on the casing. A semiconductor light emitting element can be mounted on the bottom in the first cavity. A first resin composed of a light-transmissive resin can be filled in the first cavity and then cured. Further, a second resin containing a fluorescent material dispersed in a light-transmissive resin can be filled in the second cavity and then cured while the casing is turned upside down to form a high-density fluorescent material layer near the surface of the second resin.
摘要翻译：半导体发光器件及其制造方法可以提供颜色和亮度变化较小的光源，并且可以减少可能对人类有害的光的辐射。该装置可以包括具有第一空腔的壳体，该第一空腔具有形成在其上的反射表面的倾斜表面和具有几乎垂直侧的第二腔。可以在壳体上形成具有其上形成有第三反射表面的倾斜表面的反射框架。半导体发光元件可以安装在第一腔中的底部上。由透光性树脂构成的第一树脂可以填充到第一空腔中，然后固化。此外，包含分散在透光树脂中的荧光材料的第二树脂可以填充在第二空腔中，然后在壳体翻转的同时固化，以在第二树脂的表面附近形成高密度荧光材料层。

3. 发明授权

US08417394B2 Substrate processing apparatus, semiconductor device manufacturing method and temperature controlling method 有权
标题翻译：基板加工装置，半导体装置的制造方法以及温度控制方法
公开(公告)号：US08417394B2
公开(公告)日：2013-04-09
申请号：US12609541
申请日：2009-10-30
申请人： Masashi Sugishita , Masaaki Ueno , Tsukasa Iida , Susumu Nishiura , Masao Aoyama , Kenichi Fujimoto , Yoshihiko Nakagawa , Hiroyuki Mitsui
发明人： Masashi Sugishita , Masaaki Ueno , Tsukasa Iida , Susumu Nishiura , Masao Aoyama , Kenichi Fujimoto , Yoshihiko Nakagawa , Hiroyuki Mitsui
IPC分类号： H01L21/67
CPC分类号： H01L21/67248
摘要： Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers. Product and filler wafers are accommodated and heat-treated in the reaction vessel while controlling a heating unit using calculation results obtained using at least the calculation parameter and deviation between a set temperature and a temperature detected in the heating unit by a temperature detector.
摘要翻译：提供了适于提高设备运行速率的基板处理装置，半导体装置制造方法和温度控制方法。计算参数计算单元使用由第一计算参数设定单元确定的至少第一计算参数校正值，基于反应容器上累积的膜厚计算计算参数，由第二计算参数设定确定的第二计算参数校正值基于填充晶片上的累积膜厚的单位和由第三计算参数设定单元基于填充晶片的数量确定的第三计算参数校正值。使用至少计算参数获得的计算结果和通过温度检测器在加热单元中检测到的设定温度和温度之间的偏差来控制加热单元，从而在反应容器中容纳和热处理产物和填料晶片。

4. 发明申请

US20100124726A1 SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND TEMPERATURE CONTROLLING METHOD 有权
标题翻译：基板加工装置，半导体装置制造方法及温度控制方法
公开(公告)号：US20100124726A1
公开(公告)日：2010-05-20
申请号：US12609541
申请日：2009-10-30
申请人： Masashi Sugishita , Masaaki Ueno , Tsukasa Iida , Susumu Nishiura , Masao Aoyama , Kenichi Fujimoto , Yoshihiko Nakagawa , Hiroyuki Mitsui
发明人： Masashi Sugishita , Masaaki Ueno , Tsukasa Iida , Susumu Nishiura , Masao Aoyama , Kenichi Fujimoto , Yoshihiko Nakagawa , Hiroyuki Mitsui
IPC分类号： H01L21/477
CPC分类号： H01L21/67248
摘要： Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers. Product and filler wafers are accommodated and heat-treated in the reaction vessel while controlling a heating unit using calculation results obtained using at least the calculation parameter and deviation between a set temperature and a temperature detected in the heating unit by a temperature detector.
摘要翻译：提供了适于提高设备运行速率的基板处理装置，半导体装置制造方法和温度控制方法。计算参数计算单元使用由第一计算参数设定单元确定的至少第一计算参数校正值，基于反应容器上累积的膜厚计算计算参数，由第二计算参数设定确定的第二计算参数校正值基于填充晶片上的累积膜厚的单位和由第三计算参数设定单元基于填充晶片的数量确定的第三计算参数校正值。使用至少计算参数获得的计算结果和通过温度检测器在加热单元中检测到的设定温度和温度之间的偏差来控制加热单元，从而在反应容器中容纳和热处理产物和填料晶片。

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