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1. 发明公开

US20240096743A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240096743A1
公开(公告)日：2024-03-21
申请号：US18353669
申请日：2023-07-17
申请人： Mitsubishi Electric Corporation
发明人： Hiroyuki NAKAMURA , Shiori UOTA
IPC分类号： H01L23/433 , H01L23/31
CPC分类号： H01L23/4334 , H01L23/3107
摘要： In a semiconductor device including a flexible insulating member on a heat dissipation surface, resin burrs entering underneath the flexible insulating member are prevented from generating in a sealing member. A power module includes a conductive die bonding portion, a semiconductor element bonded to an upper surface of the die bonding portion, a sealing member sealing the die bonding portion and the semiconductor element, and a flexible insulating member bonded to a lower surface of the die bonding portion. The flexible insulating member is arranged in a recessed portion on a lower surface of the sealing member and has a convex portion protruding from the lower surface of the sealing member.

2. 发明申请

US20190326897A1 DRIVING DEVICE FOR SEMICONDUCTOR ELEMENT 审中-公开
公开(公告)号：US20190326897A1
公开(公告)日：2019-10-24
申请号：US16252131
申请日：2019-01-18
申请人： Mitsubishi Electric Corporation
发明人： Haruhiko MURAKAMI , Ryo GOTO , Shiori UOTA , Koichiro NOGUCHI , Motoki IMANISHI
IPC分类号： H03K17/082 , H03K17/18 , H02H9/02 , G08B21/18
摘要： A driving device for a semiconductor element includes: a plurality of detection circuits that detect different types of abnormalities of the semiconductor element; a logic circuit that generates an error signal when at least one of the detection circuits detects an abnormality; an alarm signal generating circuit that receives the error signal and generates an alarm signal made of one or a plurality of pulses, the alarm signal having a different pulse width for each of the detection circuits that has detected an abnormality; and a protection operation determining circuit that determines whether or not a protection function of the semiconductor element is operating based on the error signal and the alarm signal, and shuts off input of a drive signal to the semiconductor element when it is determined that the protection function is operating.

3. 发明申请

US20170074921A1 Life Estimation Circuit and Semiconductor Device Made Using the Same 审中-公开
标题翻译：寿命估算电路和使用其的半导体器件
公开(公告)号：US20170074921A1
公开(公告)日：2017-03-16
申请号：US15180383
申请日：2016-06-13
申请人： Mitsubishi Electric Corporation
发明人： Shiori UOTA , Fumitaka TAMETANI , Takahiro INOUE , Rei YONEYAMA
IPC分类号： G01R31/26 , H01L27/06 , H01L29/739 , H01L29/16 , H01L29/861
CPC分类号： G01R31/2642 , G01R31/2608 , G01R31/2632 , G01R31/42 , H01L27/0635 , H01L29/16 , H01L29/1608 , H01L29/7393 , H01L29/861 , H03K17/18
摘要： A life estimation circuit includes a temperature detector configured to detect temperature of a power element unit, an inflection point detection unit configured to detect an inflection point of temperature variation in the power element unit based on an output signal from the temperature detector, an operation unit configured to determine an absolute value of a difference between the temperature of the power element unit at an inflection point detected this time and the temperature of the power element unit at an inflection point detected last time, a count circuit configured to count the number of times that the absolute value of the difference in temperature has reached a threshold temperature, and a signal generation unit configured to output, when a count value from the count circuit reaches a threshold number of times, an alarm signal indicating that the power element is about to reach the end of its life.
摘要翻译：寿命估计电路包括：温度检测器，被配置为检测功率元件单元的温度;拐点检测单元，被配置为基于来自温度检测器的输出信号检测功率元件单元中的温度变化的拐点;操作单元被配置为确定在此时检测的拐点处的功率元件单元的温度与上次检测到的拐点处的功率单元的温度之间的差的绝对值，配置为计数次数的计数电路温度差的绝对值达到阈值温度，并且信号生成单元被配置为当来自计数电路的计数值达到阈值次数时，输出表示功率元件即将到达的报警信号到达终身。

4. 发明申请

US20220278029A1 SEMICONDUCTOR PACKAGE 有权
公开(公告)号：US20220278029A1
公开(公告)日：2022-09-01
申请号：US17403135
申请日：2021-08-16
申请人： Mitsubishi Electric Corporation
发明人： Yuki TERADO , Shiori UOTA , Shinji SAKAI
IPC分类号： H01L23/495 , H01L23/31
摘要： A semiconductor package includes: a plurality of die pads; a plurality of semiconductor chips provided on the plurality of die pads respectively; a plurality of lead terminals connected to the plurality of semiconductor chips respectively; and a package sealing the plurality of die pads, the plurality of semiconductor chips, and the plurality of lead terminals, the plurality of die pads and the plurality of lead terminals are exposed from a lower surface of the package, and on the lower surface of the package, grooves are provided among the die pads adjacent to one another and among the lead terminals adjacent to one another.

5. 发明申请

US20150115718A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE 有权
标题翻译：半导体器件和半导体器件
公开(公告)号：US20150115718A1
公开(公告)日：2015-04-30
申请号：US14293326
申请日：2014-06-02
申请人： Mitsubishi Electric Corporation
发明人： Hiroshi YOSHIDA , Kyoko OYAMA , Yoshikazu TANAKA , Shiori UOTA , Nobuya NISHIDA
IPC分类号： H02M3/158 , H02M3/06
CPC分类号： H02M1/08 , H02M3/06 , H02M3/158 , H02M7/537 , H02M7/5387 , H03K17/567 , H03K2217/0036 , Y10T307/609
摘要： A semiconductor device includes: a voltage-dividing resistor circuit including first and second resistors connected in series between a power supply potential and a reference potential and outputting a potential at a point of connection between the first and second resistors; a transient response detection circuit including a third resistor having a first end connected to the power supply potential and a capacitor connected between a second end of the third resistor and the reference potential, and outputting a potential at a point of connection between the third resistor and the capacitor; an AND circuit ANDing an output signal of the voltage-dividing resistor circuit and an output signal of the transient response detection circuit; and an output circuit, wherein switching of the output circuit is controlled by an output signal of the AND circuit.
摘要翻译：半导体器件包括：分压电阻器电路，包括串联在电源电位和参考电位之间并在第一和第二电阻器之间的连接点处输出电位的第一和第二电阻器; 一个瞬态响应检测电路，包括具有连接到电源电位的第一端的第三电阻器和连接在第三电阻器的第二端和参考电位之间的电容器，并且在第三电阻器和第三电阻器之间的连接点处输出电位电容器 AND电路将分压电阻电路的输出信号与瞬态响应检测电路的输出信号进行AND运算; 以及输出电路，其中输出电路的切换由AND电路的输出信号控制。

6. 发明申请

US20200083882A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20200083882A1
公开(公告)日：2020-03-12
申请号：US16415643
申请日：2019-05-17
申请人： Mitsubishi Electric Corporation
发明人： Keisuke EGUCHI , Takahiro INOUE , Rei YONEYAMA , Shiori UOTA , Haruhiko MURAKAMI
IPC分类号： H03K17/567 , H01L25/16 , H01L25/18 , H01L25/07 , H03K17/687
摘要： First and second switching regions include first and second gate electrodes respectively. Channel currents of the first and second switching regions are controlled according to electric charge amounts supplied by control signals input to the first and second gate electrodes respectively. The second switching region is connected in parallel with the first switching region. A control section outputs a first control signal for turning-on the first switching region to the first gate electrode and a second control signal for turning-on the second switching region to the second gate electrode. The control section stops outputting the second control signal after a first predetermined period elapses from a start of outputting the first and second control signals, and outputs the second control signal after a second predetermined period elapses from a stop of outputting the second control signal.

7. 发明申请

US20170278811A1 SIGNAL TRANSMISSION INSULATIVE DEVICE AND POWER SEMICONDUCTOR MODULE 审中-公开
公开(公告)号：US20170278811A1
公开(公告)日：2017-09-28
申请号：US15509126
申请日：2015-08-19
申请人： Mitsubishi Electric Corporation
发明人： Kenichi SUGA , Takao TSURIMOTO , Hiroki SHIOTA , Kenichi MOROKUMA , Shoichi ORITA , Fumitaka TAMETANI , Takahiro INOUE , Shiori UOTA
IPC分类号： H01L23/00 , H04L1/00 , H01L23/373 , H01L25/16 , G11C11/34 , H05K7/14
CPC分类号： H01L24/03 , G11C11/34 , H01F27/2804 , H01F27/32 , H01F2027/2809 , H01L23/3738 , H01L23/62 , H01L23/645 , H01L25/162 , H01L25/18 , H04L1/0006 , H05K7/1432
摘要： A signal transmission insulating device includes: a first coil; a second coil opposing the first coil to form a transformer together with the first coil; a first insulating film provided between the opposing first coil and second coil and made of a first dielectric material; a second insulating film surrounding the first coil and made of a second dielectric material having a lower resistivity or a higher permittivity than the first dielectric material; and a third insulating film surrounding the second coil and made of a third dielectric material having a lower resistivity or a higher permittivity than the first dielectric material.

8. 发明公开

US20240258254A1 BONDING PAD, INTEGRATED CIRCUIT ELEMENT, AND INTEGRATED CIRCUIT DEVICE 审中-公开
公开(公告)号：US20240258254A1
公开(公告)日：2024-08-01
申请号：US18534294
申请日：2023-12-08
申请人： Mitsubishi Electric Corporation
发明人： Yuki TERADO , Kazuya HOKAZONO , Hongbo ZHANG , Shiori UOTA
IPC分类号： H01L23/00 , H01L23/495 , H01L25/16
CPC分类号： H01L24/05 , H01L23/49537 , H01L24/48 , H01L25/16 , H01L2224/05084 , H01L2224/05089 , H01L2224/05573 , H01L2224/48137 , H01L2224/48245
摘要： The bonding pad includes a surface electrode layer that has a first surface; a resistance layer that has a second surface; a stress buffer layer that is disposed between the surface electrode layer and the resistance layer in the first direction; and a connecting member that connects the surface electrode layer and the stress buffer layer in the first direction. The connecting member includes an insulator that is in contact with the each of the surface electrode layer and the stress buffer layer in the first direction, and a plurality of plugs that are in contact with the insulator in the direction orthogonal to the first direction and electrically connect the surface electrode layer and the stress buffer layer. In the first direction, a thickness of the stress buffer layer is larger than a thickness of the surface electrode layer.

9. 发明申请

US20170229952A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE 审中-公开
公开(公告)号：US20170229952A1
公开(公告)日：2017-08-10
申请号：US15493840
申请日：2017-04-21
申请人： Mitsubishi Electric Corporation
发明人： Hiroshi YOSHIDA , Kyoko OYAMA , Yoshikazu TANAKA , Shiori UOTA , Nobuya NISHIDA
IPC分类号： H02M1/08 , H03K17/567 , H02M3/06
CPC分类号： H02M1/08 , H02M3/06 , H02M3/158 , H02M7/537 , H02M7/5387 , H03K17/567 , H03K2217/0036 , Y10T307/609
摘要： A semiconductor device includes: a voltage-dividing resistor circuit including first and second resistors connected in series between a power supply potential and a reference potential and outputting a potential at a point of connection between the first and second resistors; a transient response detection circuit including a third resistor having a first end connected to the power supply potential and a capacitor connected between a second end of the third resistor and the reference potential, and outputting a potential at a point of connection between the third resistor and the capacitor; an AND circuit ANDing an output signal of the voltage-dividing resistor circuit and an output signal of the transient response detection circuit; and an output circuit, wherein switching of the output circuit is controlled by an output signal of the AND circuit.

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