专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20160372585A1 POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：功率半导体器件
公开(公告)号：US20160372585A1
公开(公告)日：2016-12-22
申请号：US15122261
申请日：2014-10-29
申请人： MITSUBISHI ELECTRIC CORPORATION
发明人： Akihiko FURUKAWA , Shoichi ORITA , Hiroki MURAOKA , Atsushi NARAZAKI , Tsuyoshi KAWAKAMI , Yuji MURAKAMI
IPC分类号： H01L29/739 , H01L29/08 , H01L29/10 , H01L29/66
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0696 , H01L29/0804 , H01L29/0821 , H01L29/1004 , H01L29/1095 , H01L29/407 , H01L29/66348
摘要： In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.
摘要翻译：在本申请中，功率半导体器件包括具有第一主表面和与第一主表面相对的第二主表面的第一导电类型的第一基极区域，设置在第一主体上的第二导电型第二基极区域表面和至少三个彼此平行的凹槽部分，其设置在第二基底区域的表面上。该装置还包括覆盖各个沟槽部分的内壁的绝缘膜，填充在绝缘膜上的导电沟槽栅极，设置在第二基极区域中的第一导电型发射极区域和设置在第二导电型集电极区域上的第二导电型集电极区域第一基区的第二主表面。嵌入第一沟槽部分和第三沟槽部分中的沟槽栅电连接到栅电极，并且嵌入在第二沟槽部分中的沟槽栅电连接到发射极。

2. 发明申请

US20170278811A1 SIGNAL TRANSMISSION INSULATIVE DEVICE AND POWER SEMICONDUCTOR MODULE 审中-公开
公开(公告)号：US20170278811A1
公开(公告)日：2017-09-28
申请号：US15509126
申请日：2015-08-19
申请人： Mitsubishi Electric Corporation
发明人： Kenichi SUGA , Takao TSURIMOTO , Hiroki SHIOTA , Kenichi MOROKUMA , Shoichi ORITA , Fumitaka TAMETANI , Takahiro INOUE , Shiori UOTA
IPC分类号： H01L23/00 , H04L1/00 , H01L23/373 , H01L25/16 , G11C11/34 , H05K7/14
CPC分类号： H01L24/03 , G11C11/34 , H01F27/2804 , H01F27/32 , H01F2027/2809 , H01L23/3738 , H01L23/62 , H01L23/645 , H01L25/162 , H01L25/18 , H04L1/0006 , H05K7/1432
摘要： A signal transmission insulating device includes: a first coil; a second coil opposing the first coil to form a transformer together with the first coil; a first insulating film provided between the opposing first coil and second coil and made of a first dielectric material; a second insulating film surrounding the first coil and made of a second dielectric material having a lower resistivity or a higher permittivity than the first dielectric material; and a third insulating film surrounding the second coil and made of a third dielectric material having a lower resistivity or a higher permittivity than the first dielectric material.

3. 发明申请

US20180175847A1 SIGNAL TRANSMISSION CIRCUIT AND POWER CONVERSION DEVICE 审中-公开
公开(公告)号：US20180175847A1
公开(公告)日：2018-06-21
申请号：US15579790
申请日：2016-05-12
申请人： Mitsubishi Electric Corporation
发明人： Kenichi MOROKUMA , Jun TOMISAWA , Tetsuya UCHIDA , Shoichi ORITA
IPC分类号： H03K17/081 , H02M1/08
CPC分类号： H03K17/08104 , H02M1/08 , H03K17/0812 , H03K17/691
摘要： A first circuit outputs transmission signals that change between “H” and “L” in a period of an oscillation signal in addition to a transition time of an input signal when it changes to “H” or “L”. Control protection elements invalidate induced voltage signals obtained from transformers for first and second mask periods in response to transmission signals. Buffer circuits and Schmitt circuits generate a first signal and a second signal, each indicating “H” for a relatively long period, on the basis of “H” of the induced voltage signals. A control circuit invalidates the first signal and the second signal when both the first signal and the second signal indicate “H”.

4. 发明申请

US20170141673A1 POWER SEMICONDUCTOR ELEMENT DRIVING CIRCUIT 有权
公开(公告)号：US20170141673A1
公开(公告)日：2017-05-18
申请号：US15322763
申请日：2015-01-21
申请人： Mitsubishi Electric Corporation
发明人： Yoshitaka NAKA , Yasushi NAKAYAMA , Yoshiko TAMADA , Shoichi ORITA
IPC分类号： H02M1/08
CPC分类号： H02M1/08 , H02M2001/0054 , H03K17/165 , Y02B70/1491
摘要： A power semiconductor device driving circuit has a capacitor whose one end is connected with a first or a second main electrode of a power semiconductor device, a first switch for charging the capacitor and a control electrode of the power semiconductor device with electric charges, and a second switch for discharging electric charges; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through different resistors, electric charges are discharged from the control electrode and the capacitor through one and the same resistor when the second switch turns on; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through one and the same resistor, electric charges are discharged from the control electrode and the capacitor through different resistors when the second switch turns on.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式