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1. 发明公开

US20240282725A1 POWER AMPLIFIER 审中-公开
公开(公告)号：US20240282725A1
公开(公告)日：2024-08-22
申请号：US18566330
申请日：2021-12-08
申请人： Mitsubishi Electric Corporation
发明人： Yoshinobu SASAKI , Katsuya KATO , Kazuya YAMAMOTO
IPC分类号： H01L23/66 , H03F1/56 , H03F3/60
CPC分类号： H01L23/66 , H03F1/56 , H03F3/601 , H01L2223/6611 , H01L2223/6655
摘要： A FET chip (T1) includes a FET cell (CL1,CL2), a fundamental wave gate pad (GP1,G12) and a second harmonic gate pad (GP3) separated from each other, and gate wiring (GB1,GB2) connecting a gate electrode (G1,G2) of the FET cell (CL1,CL2) to the fundamental wave gate pad (GP1,G12) and the second harmonic gate pad (GP3). A pre-match chip (P1) includes a fundamental wave pre-match circuit (PA1,PA2) and a second harmonic trap circuit (PA3). A fundamental wave wire (W21,W22) connects the fundamental wave pre-match circuit (PA1,PA2) and the fundamental wave gate pad (GP1,G12). A second harmonic wire (W31,W32) connects the second harmonic trap circuit (PA3) and the second harmonic gate pad (GP3).

2. 发明申请

US20160156178A1 ESD PROTECTION CIRCUIT AND RF SWITCH 有权
标题翻译： ESD保护电路和RF开关
公开(公告)号：US20160156178A1
公开(公告)日：2016-06-02
申请号：US14844736
申请日：2015-09-03
申请人： Mitsubishi Electric Corporation
发明人： Kazuya YAMAMOTO , Miyo MIYASHITA , Suguru MAKI
IPC分类号： H02H9/04
CPC分类号： H03K17/693 , H01L27/0255 , H02H9/046 , H03F1/52 , H03F3/191 , H03F3/245 , H03F2200/451 , H05K1/0259
摘要： An ESD protection circuit is connected in parallel to a MIM capacitor between a first terminal and a second terminal. First Schottky diodes are connected in series to each other and have anodes connected on the first terminal side and cathodes connected on the second terminal side. Second Schottky diodes are connected in series to each other and connected in anti-parallel to the first Schottky diodes. When an RF signal is inputted to neither the first terminal nor the second terminal, the first terminal has a higher DC voltage than that of the second terminal. The number of the first Schottky diodes is greater than the number of the second Schottky diodes. The number of the second Schottky diodes is set such that an amplitude of the RF signal does not attenuate to predetermined amplitude of the RF signal when the RF signal passes through the MIM capacitor.
摘要翻译： ESD保护电路与第一端子和第二端子之间的MIM电容器并联连接。第一肖特基二极管彼此串联连接并且具有连接在第一端子侧的阳极和连接在第二端子侧的阴极。第二肖特基二极管彼此串联连接并且与第一肖特基二极管反并联连接。当RF信号既不输入到第一端子也不向第二端子输入时，第一端子具有比第二端子更高的DC电压。第一肖特基二极管的数量大于第二肖特基二极管的数量。第二肖特基二极管的数量被设定为当RF信号通过MIM电容器时，RF信号的幅度不衰减到RF信号的预定幅度。

3. 发明申请

US20140292440A1 DIRECTIONAL COUPLER 有权
标题翻译：方向耦合器
公开(公告)号：US20140292440A1
公开(公告)日：2014-10-02
申请号：US14224829
申请日：2014-03-25
申请人： MITSUBISHI ELECTRIC CORPORATION
发明人： Akimichi HIROTA , Tetsu OWADA , Kazuhiro IYOMASA , Shinsuke WATANABE , Kazuya YAMAMOTO
IPC分类号： H01P5/18
CPC分类号： H01P5/187
摘要： Disclosed is a directional coupler including a first hollow portion 1301 that is disposed in a first ground conductor 1201 and is arranged directly above a first signal conductor 1001 and a second signal conductor 1002, and that is constructed of a discontinuous structure that has a function of delaying the phase and that is small with respect to the one-quarter wavelength of an operating frequency.
摘要翻译：公开了一种定向耦合器，其包括设置在第一接地导体1201中并且直接布置在第一信号导体1001和第二信号导体1002上方的第一中空部分1301，并且由具有以下功能的不连续结构构成：延迟相位并且相对于工作频率的四分之一波长是小的。

4. 发明申请

US20210167741A1 AMPLIFIER 有权
公开(公告)号：US20210167741A1
公开(公告)日：2021-06-03
申请号：US17045238
申请日：2018-05-28
申请人： Mitsubishi Electric Corporation
发明人： Kenji HARAUCHI , Yoshinobu SASAKI , Miyo MIYASHITA , Kazuya YAMAMOTO
IPC分类号： H03F3/193 , H03F1/56 , H01L23/66
摘要： Provided are an input matching circuit, at least one amplifying transistor that receives a signal from the input matching circuit, a first dummy transistor that receives a signal from the input matching circuit, a second dummy transistor that receives a signal from the input matching circuit, and an output matching circuit that outputs an output of the amplifying transistor, the amplifying transistor being arranged between the first dummy transistor and the second dummy transistor, the amplifying transistor, the first dummy transistor, and the second dummy transistor being provided in a row along the input matching circuit.

5. 发明申请

US20180115293A1 BOARD-TYPE NOISE FILTER AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20180115293A1
公开(公告)日：2018-04-26
申请号：US15562574
申请日：2016-04-27
申请人： Mitsubishi Electric Corporation
发明人： Kazuya YAMAMOTO , Takashi KUMAGAI
IPC分类号： H03H1/00 , H01F27/28 , H05K1/18 , H05K1/02
CPC分类号： H03H1/0007 , H01F17/062 , H01F27/2823 , H01F27/292 , H01F2017/0093 , H01F2027/065 , H03H7/09 , H03H7/427 , H03H2001/0035 , H03H2001/005 , H05K1/0216 , H05K1/181 , H05K2201/10015 , H05K2201/1003
摘要： A board-type noise filter having higher noise removal performance than that of a conventional noise filter, and an electronic device including the board-type noise filter are provided. The board-type noise filter includes: a printed wiring board having a wiring pattern formed thereon; a choke coil including a core having a toroidal shape; a frame ground portion fixed to the printed wiring board at a position overlapping with a hollow portion of the choke coil when the toroidal shape of the choke coil is seen in plan view, the frame ground portion being capable of being grounded to a frame ground; and a capacitor having a first terminal connected to the frame ground portion through the wiring pattern.

6. 发明申请

US20170141047A1 MICROWAVE AND MILLIMETER WAVE PACKAGE 审中-公开
公开(公告)号：US20170141047A1
公开(公告)日：2017-05-18
申请号：US15212525
申请日：2016-07-18
申请人： Mitsubishi Electric Corporation
发明人： Miyo MIYASHITA , Kazuya YAMAMOTO , Hiroaki MAEHARA
IPC分类号： H01L23/552 , H01L23/48 , H01L23/492 , H01L23/66
CPC分类号： H01L23/552 , H01L23/481 , H01L23/4924 , H01L23/66 , H01L2223/6616 , H01L2223/6655 , H01L2224/48091 , H01L2924/16195 , H01L2924/00014
摘要： A package includes a conductor base plate having a element fixed to an upper surface thereof, a side wall provided on the conductor base plate to surround the element, the side wall having a conductor portion electrically connected to the conductor base plate, a dielectric cap disposed on the side wall, a front-side metal film provided on an outer surface of the dielectric cap, a first back-side metal film provided on an inner surface of the dielectric cap such that a center of the first back-side metal film approximately coincides with a center of a surface of the dielectric cap which faces the conductor base plate, and a plurality of vias passing through the dielectric cap to achieve electrical connection between the front-side metal film and the first back-side metal film and between the front-side metal film and the conductor portion oldie side wall.

7. 发明公开

US20240146262A1 POWER AMPLIFIER AND RADIO FREQUENCY MODULE 审中-公开
公开(公告)号：US20240146262A1
公开(公告)日：2024-05-02
申请号：US18548214
申请日：2021-06-30
申请人： Mitsubishi Electric Corporation
发明人： Ko KANAYA , Kazuya YAMAMOTO
IPC分类号： H03F3/24 , H01L23/66 , H03F1/56 , H03F3/195
CPC分类号： H03F3/245 , H01L23/66 , H03F1/56 , H03F3/195 , H01L2223/6611 , H01L2223/6655 , H03F2200/451
摘要： A power amplifier according to the present disclosure includes an input terminal that receives a high-frequency signal from an outside, an MMIC that receives the high-frequency signal via the input terminal and amplifies the high-frequency signal, an input matching circuit, a transistor that receives, via the input matching circuit, the high-frequency signal amplified by the MMIC and amplifies the high-frequency signal, an output matching circuit, an output terminal that receives a drain voltage of the transistor from the outside, receives, via the output matching circuit, the high-frequency signal amplified by the transistor, and outputs the high-frequency signal to the outside and a drain bias circuit board that connects a drain of the transistor and a drain of the MMIC, wherein the transistor and the MMIC are conjugately matched at impedance smaller than 50 Ω.

8. 发明公开

US20240030879A1 POWER AMPLIFIER 审中-公开
公开(公告)号：US20240030879A1
公开(公告)日：2024-01-25
申请号：US18249197
申请日：2021-03-03
申请人： Mitsubishi Electric Corporation
发明人： Kazuya YAMAMOTO , Satoshi SUZUKI
IPC分类号： H03F3/24 , H03F1/08 , H03F1/30 , H03F1/02
CPC分类号： H03F3/245 , H03F1/086 , H03F1/301 , H03F1/0216 , H03F2200/451
摘要： A power amplifier includes a main transistor configured to amplify an input signal and having characteristics of a drain current delay, a replica transistor having the same characteristics of the drain current delay as the characteristics of the main transistor, a temperature of the replica transistor changing in accordance with a temperature of the main transistor, and an envelope signal of the input signal being input to the replica transistor, an extraction circuit configured to extract a delay component due to the drain current delay from an output voltage of the replica transistor and an adder configured to add the delay component to a gate bias voltage to be applied to the main transistor so as to cancel out the drain current delay of the main transistor.

9. 发明申请

US20170229445A1 FIELD-EFFECT TRANSISTOR WITH PROTECTION DIODES 审中-公开
公开(公告)号：US20170229445A1
公开(公告)日：2017-08-10
申请号：US15279637
申请日：2016-09-29
申请人： Mitsubishi Electric Corporation
发明人： Hiroaki MAEHARA , Miyo MIYASHITA , Kazuya YAMAMOTO
IPC分类号： H01L27/02 , H01L23/535 , H01L29/872 , H01L27/06 , H01L29/20
摘要： A field-effect transistor with protection diodes includes: a field-effect transistor; and a two-terminal electrostatic protection circuit connected between a gate and a source of the field-effect transistor, wherein the two-terminal electrostatic protection circuit comprises: a first diode that is positioned on a reverse-biased side when a voltage lower than a potential of the source is applied to the gate and has a reverse withstand voltage lower than a reverse withstand voltage between the gate and the source of the field-effect transistor; a second diode that is positioned on a forward-biased side when a voltage lower than a potential of the source is applied to the gate and is connected in anti-series to the first diode; and a resistor that is connected in series to a diode pair comprising the first diode and the second diode and formed using a same channel layer as that of the field-effect transistor.

10. 发明申请

US20140292439A1 DIRECTIONAL COUPLER 有权
标题翻译：方向耦合器
公开(公告)号：US20140292439A1
公开(公告)日：2014-10-02
申请号：US14224796
申请日：2014-03-25
申请人： Mitsubishi Electric Corporation
发明人： Hideharu YOSHIOKA , Akimichi HIROTA , Tetsu OWADA , Shinsuke WATANABE , Kazuhiro IYOMASA , Kazuya YAMAMOTO
IPC分类号： H01P5/18
CPC分类号： H01P5/187
摘要： Disclosed is a directional coupler including a broadside coupled line 1031 provided with a main signal line conductor 1001 and a secondary signal line conductor 1011 arranged in parallel with the main signal line conductor 1001, and an offset broadside coupled line 1032 provided with a main signal line conductor 1002 having an end portion connected to an end portion of the main signal line conductor 1001 and a second secondary signal line conductor 1012 having an end portion connected to an end portion of the secondary signal line conductor 1011, and arranged in parallel with the main signal line conductor 1002, in which a coupled line impedance in the broadside coupled line 1031 is lower than a terminal impedance and a coupled line impedance in the offset broadside coupled line 1032 is higher than the terminal impedance.
摘要翻译：公开了一种定向耦合器，包括设置有与主信号线导体1001并联布置的主信号线导体1001和次信号线导体1011的宽侧耦合线1031以及设置有主信号线的偏移宽边耦合线1032 导体1002具有连接到主信号线导体1001的端部的端部和具有连接到次级信号线导体1011的端部的端部的第二辅助信号线导体1012，并且与主信号线导体信号线导体1002，其中宽侧耦合线1031中的耦合线路阻抗低于端子阻抗，并且偏移宽侧耦合线1032中的耦合线路阻抗高于端子阻抗。

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