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1. 发明申请

US20210036115A1 FIELD-EFFECT TRANSISTOR 有权
公开(公告)号：US20210036115A1
公开(公告)日：2021-02-04
申请号：US16498349
申请日：2017-09-01
申请人： Mitsubishi Electric Corporation
发明人： Shinsuke WATANABE
IPC分类号： H01L29/417 , H01L29/423 , H01L23/66
摘要： A field effect transistor according to the present invention includes a semiconductor substrate, a plurality of drain electrodes provided on a first surface of the semiconductor substrate and extending in a first direction, an input terminal, an output terminal, and a plurality of metal layers provided in the semiconductor substrate apart from the first surface and extending in a second direction crossing the first direction, in which the plurality of metal layers include a first metal layer and a second metal layer which is longer than the first metal layer and which crosses more drain electrodes than the first metal layer when seen from a direction perpendicular to the first surface, and among the plurality of drain electrodes, those having a smaller length of line from the input terminal to the output terminal are provided with more metal layers directly thereunder.

2. 发明申请

US20200185285A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20200185285A1
公开(公告)日：2020-06-11
申请号：US16316108
申请日：2016-10-24
申请人： Mitsubishi Electric Corporation
发明人： Koichiro NISHIZAWA , Yoshitsugu YAMAMOTO , Katsumi MIYAWAKI , Shinsuke WATANABE , Toshihiko SHIGA
IPC分类号： H01L23/04 , H01L21/48 , H01L23/10 , H01L23/552 , H01L23/34
摘要： A semiconductor device according to the present invention includes: a substrate; a heat generating portion provided on the substrate; a cap substrate provided above the substrate so that a hollow portion is provided between the substrate and the cap substrate; and a reflection film provided above the heat generating portion and reflecting a medium wavelength infrared ray. The reflection film reflects the infrared ray radiated to the cap substrate side through the hollow portion due to the temperature increase of the heat generating portion, so that the temperature increase of the cap substrate side can be suppressed. Because of this function, even if mold resin is provided on the cap substrate, increase of the temperature of the mold resin can be suppressed.

3. 发明申请

US20140292439A1 DIRECTIONAL COUPLER 有权
标题翻译：方向耦合器
公开(公告)号：US20140292439A1
公开(公告)日：2014-10-02
申请号：US14224796
申请日：2014-03-25
申请人： Mitsubishi Electric Corporation
发明人： Hideharu YOSHIOKA , Akimichi HIROTA , Tetsu OWADA , Shinsuke WATANABE , Kazuhiro IYOMASA , Kazuya YAMAMOTO
IPC分类号： H01P5/18
CPC分类号： H01P5/187
摘要： Disclosed is a directional coupler including a broadside coupled line 1031 provided with a main signal line conductor 1001 and a secondary signal line conductor 1011 arranged in parallel with the main signal line conductor 1001, and an offset broadside coupled line 1032 provided with a main signal line conductor 1002 having an end portion connected to an end portion of the main signal line conductor 1001 and a second secondary signal line conductor 1012 having an end portion connected to an end portion of the secondary signal line conductor 1011, and arranged in parallel with the main signal line conductor 1002, in which a coupled line impedance in the broadside coupled line 1031 is lower than a terminal impedance and a coupled line impedance in the offset broadside coupled line 1032 is higher than the terminal impedance.
摘要翻译：公开了一种定向耦合器，包括设置有与主信号线导体1001并联布置的主信号线导体1001和次信号线导体1011的宽侧耦合线1031以及设置有主信号线的偏移宽边耦合线1032 导体1002具有连接到主信号线导体1001的端部的端部和具有连接到次级信号线导体1011的端部的端部的第二辅助信号线导体1012，并且与主信号线导体信号线导体1002，其中宽侧耦合线1031中的耦合线路阻抗低于端子阻抗，并且偏移宽侧耦合线1032中的耦合线路阻抗高于端子阻抗。

4. 发明公开

US20230307517A1 TRANSISTOR 审中-公开
公开(公告)号：US20230307517A1
公开(公告)日：2023-09-28
申请号：US18004832
申请日：2020-11-16
申请人： Mitsubishi Electric Corporation
发明人： Shinsuke WATANABE
IPC分类号： H01L29/417 , H01L23/66 , H01L23/48
CPC分类号： H01L29/41758 , H01L23/66 , H01L23/481 , H01L29/7786
摘要： A transistor according to the disclosure includes a semiconductor substrate, a source pad provided on an upper surface of the semiconductor substrate, a plurality of source electrodes provided on the upper surface of the semiconductor substrate and arranged in an arrangement direction, the plurality of source electrodes each including a first end connected to the source pad and a second end on a side opposite to the source pad, a plurality of drain electrodes arranged alternately with the plurality of source electrodes in the arrangement direction, a gate electrode and a first wire configured to connect the second ends of a plurality of central electrodes provided at a central part of the semiconductor substrate in the arrangement direction among the plurality of source electrodes, and not to connect the second ends of the source electrodes other than the plurality of central electrodes.

5. 发明申请

US20220263497A1 HIGH-FREQUENCY SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220263497A1
公开(公告)日：2022-08-18
申请号：US17597734
申请日：2020-01-07
申请人： Mitsubishi Electric Corporation
发明人： Shinsuke WATANABE
IPC分类号： H03H11/28 , H01L23/66
摘要： The present invention relates to a high-frequency semiconductor device. A conventional high-frequency semiconductor device including an input second-order harmonic matching circuit has such a problem that gain decrease occurs. In a high-frequency semiconductor device (100) of the present invention, two adjacent unit transistor cells (7) and (8) are connected to one input second-order harmonic matching circuit (19) provided on an upper surface of a semiconductor substrate (1). The input second-order harmonic matching circuit (19) includes a first capacitor (13), a first inductor (14), a second capacitor (15), and a second inductor (16). The first capacitor (13) and the first inductor (14) resonate at the frequency of a fundamental wave, and each of impedances as seen by input electrodes of the two unit transistor cells (7) and (8) is short-circuited at the frequency of a second-order harmonic.

6. 发明申请

US20140292440A1 DIRECTIONAL COUPLER 有权
标题翻译：方向耦合器
公开(公告)号：US20140292440A1
公开(公告)日：2014-10-02
申请号：US14224829
申请日：2014-03-25
申请人： MITSUBISHI ELECTRIC CORPORATION
发明人： Akimichi HIROTA , Tetsu OWADA , Kazuhiro IYOMASA , Shinsuke WATANABE , Kazuya YAMAMOTO
IPC分类号： H01P5/18
CPC分类号： H01P5/187
摘要： Disclosed is a directional coupler including a first hollow portion 1301 that is disposed in a first ground conductor 1201 and is arranged directly above a first signal conductor 1001 and a second signal conductor 1002, and that is constructed of a discontinuous structure that has a function of delaying the phase and that is small with respect to the one-quarter wavelength of an operating frequency.
摘要翻译：公开了一种定向耦合器，其包括设置在第一接地导体1201中并且直接布置在第一信号导体1001和第二信号导体1002上方的第一中空部分1301，并且由具有以下功能的不连续结构构成：延迟相位并且相对于工作频率的四分之一波长是小的。

7. 发明申请

US20210126093A1 FIELD-EFFECT TRANSISTOR 有权
公开(公告)号：US20210126093A1
公开(公告)日：2021-04-29
申请号：US17054134
申请日：2018-10-03
申请人： Mitsubishi Electric Corporation
发明人： Shinsuke WATANABE
IPC分类号： H01L29/40 , H01L29/06 , H01L29/423 , H01L29/812 , H01L29/861
摘要： A gate electrode (3), a source electrode (4), and a drain electrode (5) is provided on a surface of the semiconductor substrate (1,2). An insulating film (6) covers the surface of the semiconductor substrate (1,2) in a region between the gate electrode (3) and the drain electrode (5). A source field plate (7) is provided on the insulating film (6) and not connected with the drain electrode (5). A diode (8) has a cathode connected with the source field plate (7) and an anode having a constant potential.

8. 发明申请

US20170018549A1 TRANSISTOR 有权
标题翻译：晶体管
公开(公告)号：US20170018549A1
公开(公告)日：2017-01-19
申请号：US15016764
申请日：2016-02-05
申请人： Mitsubishi Electric Corporation
发明人： Shinsuke WATANABE
IPC分类号： H01L27/07 , H01L29/06 , H01L23/535
CPC分类号： H01L27/0727 , H01L23/482 , H01L23/4824 , H01L23/535 , H01L27/0733 , H01L27/0738 , H01L28/00 , H01L29/0619 , H01L29/41758 , H01L29/41775 , H01L2224/4912 , H01L2224/49175
摘要： A transistor includes: a semiconductor substrate; a plurality of gate electrodes, a plurality of source electrodes, and a plurality of drain electrodes on the semiconductor substrate; a drain pad on the semiconductor substrate and connected to the plurality of drain electrodes; a metal wiring on the semiconductor substrate and arranged spaced apart from, adjacent to and parallel to the drain pad; and a ground pad on the semiconductor substrate and connected to both ends of the metal wiring.
摘要翻译：晶体管包括：半导体衬底; 半导体衬底上的多个栅电极，多个源电极和多个漏电极; 半导体衬底上的漏极焊盘并连接到所述多个漏电极; 在半导体衬底上布置的金属布线，与漏极焊盘间隔开，相邻并平行; 以及在所述半导体衬底上并连接到所述金属布线的两端的接地焊盘。

9. 发明申请

US20160322487A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20160322487A1
公开(公告)日：2016-11-03
申请号：US15002748
申请日：2016-01-21
申请人： Mitsubishi Electric Corporation
发明人： Yoichi NOGAMI , Kenichi HORIGUCHI , Norio HIGASHISAKA , Shinsuke WATANABE , Toshiaki KITANO
IPC分类号： H01L29/778 , H01L29/423 , H01L29/49 , H01L29/47 , H01L29/20
CPC分类号： H01L29/8124 , H01L29/0619 , H01L29/0692 , H01L29/2003 , H01L29/41758 , H01L29/423 , H01L29/66462 , H01L29/778 , H01L29/7786
摘要： A field effect transistor includes: a semiconductor substrate having a main surface; a plurality of source electrodes and a plurality of drain electrodes alternately disposed and ohmic-connected with the main surface of the semiconductor substrate; a plurality of gate electrodes Schottky-connected with the main surface of the semiconductor substrate and respectively disposed between the plurality of source electrodes and the plurality of drain electrodes; and a Schottky electrode Schottky-connected with the main surface of the semiconductor substrate, wherein each of the plurality of drain electrodes has first and second portions separated from each other, a sum of widths of the first and second portions of each drain electrode is smaller than a width of one source electrode, the Schottky electrode is disposed between the first portion and the second portion of the drain electrode.
摘要翻译：场效应晶体管包括：具有主表面的半导体衬底; 多个源电极和与半导体衬底的主表面交替设置和欧姆连接的多个漏电极; 多个栅电极，与半导体衬底的主表面肖特基连接并分别设置在多个源电极和多个漏电极之间; 以及与半导体基板的主表面肖特基连接的肖特基电极，其中，所述多个漏电极中的每一个具有彼此分离的第一和第二部分，每个漏电极的第一和第二部分的宽度之和较小与一个源电极的宽度相比，肖特基电极设置在漏电极的第一部分和第二部分之间。

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