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1. 发明授权

US5435880A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5435880A
公开(公告)日：1995-07-25
申请号：US137292
申请日：1993-10-14
申请人： Mitsuaki Minato , Atsushi Matsushita , Shinichi Omori , Jun Kanamori
发明人： Mitsuaki Minato , Atsushi Matsushita , Shinichi Omori , Jun Kanamori
IPC分类号： C23F4/00 , C23C16/507 , H01J37/32 , H01L21/302 , C23F1/02
CPC分类号： H01J37/32091 , C23C16/507 , H01J37/32357
摘要： A plasma processing apparatus for processing a workpiece such as a semiconductor wafer in a plasma includes a downstream- or coaxial-type chamber for housing the workpiece. A first sheet-like electrode is mounted on an outer circumferential surface of the chamber and electrically connected to a high-frequency power supply, and a second sheet-like electrode is mounted on the outer circumferential surface of the chamber and connected to ground. The first and second sheet-like electrodes are spaced in confronting relationship from each other circumferentially of the chamber across or along the axis thereof. The first and second sheet-like electrodes have respective axial or circumferential arrays of successive teeth, such as rectangular comb teeth, extending circumferentially or axially of the chamber and respective axial or circumferential arrays of successive recesses which complementarily receive the teeth, respectively, in an interdigitating pattern. The teeth have respective edges spaced from the corresponding edges of the recesses by a substantially uniform gap.
摘要翻译：用于处理诸如等离子体中的半导体晶片的工件的等离子体处理装置包括用于容纳工件的下游或同轴型室。第一片状电极安装在腔室的外周面上并电连接到高频电源，第二片状电极安装在腔室的外圆周表面并连接到地面。第一和第二片状电极在腔室的圆周方向上彼此间隔开或沿其轴线相互间隔开。第一和第二片状电极具有相应的轴向或周向排列的连续的齿，例如矩形梳齿，沿圆周方向或轴向延伸，以及相应的轴向或周向阵列的连续凹槽，分别互补地接收牙齿交叉模式齿具有与凹部的相应边缘间隔开大致均匀间隙的相应边缘。

2. 发明授权

US5364488A Coaxial plasma processing apparatus 失效
标题翻译：同轴等离子体处理装置
公开(公告)号：US5364488A
公开(公告)日：1994-11-15
申请号：US954210
申请日：1992-09-30
申请人： Mitsuaki Minato , Akira Uehara , Atsushi Matsushita
发明人： Mitsuaki Minato , Akira Uehara , Atsushi Matsushita
IPC分类号： G03F7/42 , H01J37/32 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46 , H01L21/00
CPC分类号： H01J37/32522 , H01J2237/334 , Y10S156/912
摘要： A plasma processing apparatus for ashing semi-conductors wafers has a vertically elongate cylindrical chamber for generating a plasma for processing a workpiece housed therein with heat applied thereto. The cylindrical chamber has upper and lower open ends closed respectively by upper and lower chamber plates. A cooling coil is positioned above the upper chamber plate. A temperature controller actuates a fan unit to force an air flow over the cooling coil to the upper chamber plate for keeping the temperature in the cylindrical chamber within a predetermined range. The plasma processing apparatus includes inner and outer electrodes disposed inside and outside, respectively, of the cylindrical chamber, and a Radio Frequency generator for generating the plasma between the inner and outer electrodes.
摘要翻译：用于灰化半导体晶片的等离子体处理装置具有垂直细长的圆柱形室，用于产生用于加热其中容纳在其中的工件的等离子体。圆柱形腔室具有上和下开口端，分别由上室和下室板封闭。冷却盘管位于上腔室板的上方。温度控制器致动风扇单元以迫使空气流过冷却盘管到上室板，用于将圆柱形室中的温度保持在预定范围内。等离子体处理装置包括分别设置在圆柱形室的内部和外部的内部和外部电极，以及用于在内部和外部电极之间产生等离子体的射频发生器。

3. 发明授权

US6067930A Coaxial plasma processing apparatus 失效
标题翻译：同轴等离子体处理装置
公开(公告)号：US6067930A
公开(公告)日：2000-05-30
申请号：US979254
申请日：1992-11-20
申请人： Mitsuaki Minato , Akira Uehara , Atsushi Matsushita
发明人： Mitsuaki Minato , Akira Uehara , Atsushi Matsushita
IPC分类号： H01L21/302 , H01J37/32 , H01L21/00 , H01L21/3065 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/32009 , H01J37/32541
摘要： A tubular reaction chamber is mounted on an annular insulating plate disposed on a grounded metallic base plate. A cylindrical outer electrode connected to a high-frequency power supply is disposed around said tubular reaction chamber, and a cylindrical inner electrode is disposed in said reaction chamber coaxially with said cylindrical outer electrode. The cylindrical inner electrode has a plurality of inlet holes defined therein, and a lower end disposed in an opening defined in the metallic base plate and fixed to said metallic base plate. A holder is disposed in said cylindrical inner electrode for supporting a plurality of wafers at spaced intervals.
摘要翻译：管状反应室安装在设置在接地金属基板上的环形绝缘板上。连接到高频电源的圆柱形外电极设置在所述管状反应室周围，并且圆柱形内电极设置在与所述圆柱形外电极同轴的所述反应室中。圆柱形内电极具有限定在其中的多个入口孔，下端设置在限定在金属基板中的开口中并固定到所述金属基板。保持器设置在所述圆柱形内电极中，用于以间隔间隔支撑多个晶片。

4. 发明授权

US5344536A Method of and apparatus for processing a workpiece in plasma 失效
标题翻译：用于处理等离子体中的工件的方法和设备
公开(公告)号：US5344536A
公开(公告)日：1994-09-06
申请号：US984518
申请日：1992-12-02
申请人： Kazuto Obuchi , Satoshi Oya , Mitsuaki Minato , Akira Uehara , Kazutoshi Fujisawa , Kazuhisa Takao
发明人： Kazuto Obuchi , Satoshi Oya , Mitsuaki Minato , Akira Uehara , Kazutoshi Fujisawa , Kazuhisa Takao
IPC分类号： G01R33/64 , C23C16/511 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46 , H01L21/02
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32623 , H01J37/3266 , H01J37/32678 , H01J37/32706
摘要： An electron cyclotron resonance plasma chemical vapor deposition system has a reaction chamber for introducing a reaction gas therein, the reaction chamber housing a table for supporting a semiconductor wafer. A microwave oscillator is connected to the reaction chamber through a waveguide for generating and introducing a microwave into the reaction chamber to produce a plasma in the reaction chamber for activating the reaction gas to etch or deposit a film on the semiconductor wafer in the reaction chamber. A pair of upper and lower coils is disposed around the reaction chamber for generating respective magnetic fields in opposite directions in the reaction chamber. The magnetic fields cancel out each other creating a region with substantially no flux density in the magnetic fields between the coils. A bias voltage is applied to the table to attract the plasma to the table in a uniform manner.
摘要翻译：电子回旋共振等离子体化学气相沉积系统具有用于在其中引入反应气体的反应室，反应室容纳用于支撑半导体晶片的工作台。微波振荡器通过波导连接到反应室，用于产生微波并将其引入反应室，以在反应室中产生等离子体，以激活反应气体以在反应室中的半导体晶片上蚀刻或沉积膜。一对上下线圈设置在反应室周围，用于在反应室中产生相反方向的相应磁场。磁场彼此抵消，在线圈之间的磁场中产生基本上没有磁通密度的区域。将偏置电压施加到工作台上以均匀的方式将等离子体吸引到工作台上。

5. 发明授权

US5584647A Object handling devices 失效
标题翻译：对象处理设备
公开(公告)号：US5584647A
公开(公告)日：1996-12-17
申请号：US006162
申请日：1993-01-19
申请人： Akira Uehara , Isamu Hijikata , Mitsuaki Minato
发明人： Akira Uehara , Isamu Hijikata , Mitsuaki Minato
IPC分类号： B25J9/06 , B25J9/04 , B25J21/00 , H01L21/677 , H01L21/687
CPC分类号： H01L21/68707 , B25J21/005 , B25J9/042 , H01L21/67742 , Y10S414/135 , Y10T74/20207
摘要： An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.
摘要翻译：物体处理装置连续地传送诸如半导体晶片的物体。物体处理装置包括具有用于保持物体的手的第一和第二可折叠臂单元，用于选择性地延伸和收缩第一臂单元的第一驱动轴，用于选择性地延伸和收缩第二臂单元的第二驱动轴，用于转动第一和第二臂单元，同时保持第一和第二臂单元处于相对位置关系，第一，第二和第三驱动轴彼此同轴设置;以及致动器机构，用于将第一和第二臂单元第三驱动轴围绕它们自己的轴彼此独立。

6. 发明授权

US4277525A Liquid compositions for forming silica coating films 失效
标题翻译：用于形成二氧化硅涂膜的液体组合物
公开(公告)号：US4277525A
公开(公告)日：1981-07-07
申请号：US133092
申请日：1980-03-24
申请人： Muneo Nakayama , Toshihiro Nishimura , Hisashi Nakane , Shozo Toda , Yoshio Hotta , Mitsuaki Minato
发明人： Muneo Nakayama , Toshihiro Nishimura , Hisashi Nakane , Shozo Toda , Yoshio Hotta , Mitsuaki Minato
IPC分类号： C08G77/00 , C08G77/02 , C08G77/06 , C09D183/00 , C09D183/02 , C09D183/04 , C09D183/14 , B05D3/02
CPC分类号： C09D183/14 , C09D183/02 , C09D183/04
摘要： Liquid compositions suitable for providing silica-based coating films on to various substrate surfaces are prepared by the reaction of an alkoxy-containing silane, a lower carboxylic acid and an alcohol in the presence of a reaction accelerator which is an organic acid different from the above mentioned lower carboxylic acid. The reaction proceeds very smoothly even in the absence of any halogen-containing compounds, and the resultant liquid coating compositions are free from the problem of corrosion due to the presence of a halogen-containing ingredient.
摘要翻译：适用于在各种基材表面上提供二氧化硅基涂膜的液体组合物是通过含有烷氧基的硅烷，低级羧酸和醇在与上述不同的有机酸的反应促进剂存在下反应来制备的提到的低级羧酸。即使不存在任何含卤素化合物，反应也非常顺利，所得到的液体涂料组合物由于含卤素成分的存在而没有腐蚀的问题。

7. 发明授权

US5709519A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5709519A
公开(公告)日：1998-01-20
申请号：US7522
申请日：1993-01-22
申请人： Akira Uehara , Mitsuaki Minato , Yoshitsugu Kawamura
发明人： Akira Uehara , Mitsuaki Minato , Yoshitsugu Kawamura
IPC分类号： B25J9/04 , B65G49/07 , C23C14/56 , C23F4/00 , C30B25/12 , H01L21/677 , B65G65/00
CPC分类号： H01J37/32743 , H01L21/67775 , Y10S414/137 , Y10S414/14
摘要： A plasma processing apparatus for etching, ashing, or otherwise processing silicon wafers has a pair of spaced reaction chambers each for processing a silicon wafers in a plasma, a pair of spaced cassette table mechanisms each for supporting a wafer cassette which houses a plurality of wafers therein, and a transfer robot disposed between the pair of spaced reaction chambers and the pair of spaced cassette table mechanisms, for transferring the wafers, one at a time, between the wafer cassette supported by one of the workpiece table mechanisms and one of the reaction chambers. Each of the cassette table mechanisms has a turntable for placing the wafer thereon, the turntable being rotatable to orient the wafer cassette out of physical interference with the robot arm of the transfer robot.
摘要翻译：用于蚀刻，灰化或以其它方式处理硅晶片的等离子体处理装置具有一对间隔开的反应室，每个反应室用于处理等离子体中的硅晶片，一对隔开的盒式工作台机构，每个用于支撑容纳多个晶片的晶片盒以及设置在一对间隔开的反应室和一对隔开的盒式工作台机构之间的传送机械装置，用于一次一个地将晶片转移到由一个工件台机构支撑的晶片盒和反应器之一房间。每个盒式台机构具有用于将晶片放置在其上的转台，转台可转动以使晶片盒与传送机器人的机器人手臂的物理干扰不一致。

8. 发明授权

US5083896A Object handling device 失效
标题翻译：对象处理装置
公开(公告)号：US5083896A
公开(公告)日：1992-01-28
申请号：US406796
申请日：1989-09-13
申请人： Akira Uehara , Isamu Hijikata , Mitsuaki Minato
发明人： Akira Uehara , Isamu Hijikata , Mitsuaki Minato
IPC分类号： B25J9/06 , B25J9/04 , B25J21/00 , H01L21/677 , H01L21/687
CPC分类号： H01L21/68707 , B25J21/005 , B25J9/042 , H01L21/67742 , Y10S414/135 , Y10T74/20207
摘要： An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.
摘要翻译：物体处理装置连续地传送诸如半导体晶片的物体。物体处理装置包括具有用于保持物体的手的第一和第二可折叠臂单元，用于选择性地延伸和收缩第一臂单元的第一驱动轴，用于选择性地延伸和收缩第二臂单元的第二驱动轴，用于转动第一和第二臂单元，同时保持第一和第二臂单元处于相对位置关系，第一，第二和第三驱动轴彼此同轴设置;以及致动器机构，用于将第一和第二臂单元第三驱动轴围绕它们自己的轴彼此独立。

9. 发明授权

US4868096A Surface treatment of silicone-based coating films 失效
标题翻译：硅胶涂层的表面处理
公开(公告)号：US4868096A
公开(公告)日：1989-09-19
申请号：US92485
申请日：1987-09-03
申请人： Muneo Nakayama , Akira Uehara , Akira Hashimoto , Toshihiro Nishimura , Isamu Hijikata , Mitsuaki Minato , Eiichi Kashiwagi
发明人： Muneo Nakayama , Akira Uehara , Akira Hashimoto , Toshihiro Nishimura , Isamu Hijikata , Mitsuaki Minato , Eiichi Kashiwagi
IPC分类号： G03F7/11
CPC分类号： G03F7/11
摘要： The adhesiveness of a silicone-based coating film on a substrate to an overcoating layer, e.g., a photoresist layer, can be improved without causing cracks when the silicone-based coating film is subjected to a plasma treatment at a temperature of 120.degree. C. or below in an atmosphere of a gas mainly composed of oxygen. Similar conditions of plasma treatment are applicable when patterning of a silicone-based coating film is desired in a procedure comprising the steps of forming a photoresist layer thereon, patterning of the photoresist layer in a photolithographic method, selectively etching the silicone-based coating film with the patterned resist layer serving as a mask and removing the photoresist layer by the plasma treatment.
摘要翻译：当将硅氧烷基涂膜在120℃的温度下进行等离子体处理时，可以改善基材上的硅酮基涂膜与外涂层（例如光致抗蚀剂层）的粘附性，而不引起裂纹。在主要由氧组成的气体的气氛中。等离子体处理的类似条件适用于当在包括以下步骤的步骤中需要对硅氧烷基涂膜进行图案化的步骤时，在其上形成光致抗蚀剂层，以光刻方法对光刻胶层进行图案化，选择性地蚀刻硅氧烷基涂膜图案化的抗蚀剂层用作掩模并通过等离子体处理去除光致抗蚀剂层。

10. 发明授权

US4749436A Equipment for thermal stabilization process of photoresist pattern on semiconductor wafer 失效
标题翻译：半导体晶片上光致抗蚀剂图案的热稳定化处理设备
公开(公告)号：US4749436A
公开(公告)日：1988-06-07
申请号：US79257
申请日：1987-07-29
申请人： Mitsuaki Minato , Isamu Hijikata , Akira Uehara , Muneo Nakayama
发明人： Mitsuaki Minato , Isamu Hijikata , Akira Uehara , Muneo Nakayama
IPC分类号： H01L21/027 , G03C5/00 , G03F7/20 , G03F7/38 , G03F7/40 , G07F7/00 , B44C1/22 , B29C37/00 , C03C15/00 , C03C25/06
CPC分类号： G03F7/2024 , Y10S438/948
摘要： An equipment (100; 200) for thermal stabilization process of photoresist pattern on semiconductor wafer comprises an ultraviolet lamp (20) by which a photoresist pattern formed on a semiconductor wafer (W) put in a process chamber (S) under vacuum pressure is irradiated with ultraviolet rays of a predetermined strength, and a heater (10) for heating the wafer to a predetermined temperature.
摘要翻译：用于半导体晶片上的光致抗蚀剂图案的热稳定化处理的设备（100; 200）包括紫外线灯（20），其中在真空压力下放置在处理室（S）中的半导体晶片（W）上形成的光致抗蚀剂图案被照射具有预定强度的紫外线，以及用于将晶片加热到预定温度的加热器（10）。

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