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1. 发明授权

US06444966B1 Microwave oven with a rotational antenna 有权
公开(公告)号：US06444966B1
公开(公告)日：2002-09-03
申请号：US09791852
申请日：2001-02-26
申请人： Eiji Mukumoto , Katsunao Takahashi , Yoshitsugu Kawamura
发明人： Eiji Mukumoto , Katsunao Takahashi , Yoshitsugu Kawamura
IPC分类号： H05B672
摘要： A rotational antenna has a circular portion having a disc-like shape and a cylindrical portion connected to the central portion of the circular portion, and rotates in a direction perpendicular to the sheet with the cylindrical portion serving as an axis. By driving a motor, the motive power is transmitted via a motor shaft and the cylindrical portion to the rotational antenna, thereby rotating the rotational antenna. A bearing serves the function of a spacer between the cylindrical portion and a waveguide. A spacer is attached on an upper surface of the circular portion. The dimension in the direction of height of a spacer is greater than the distance in the direction of height between a bottom plate and a portion in the vicinity of the central portion of the rotational antenna. Thus, the rotational antenna deflects from its central portion toward its outer edge portion, and is fixed with respect to the up-down direction by spacers and the bearing.

2. 发明授权

US06828533B2 Microwave heating device 失效
标题翻译：微波加热装置
公开(公告)号：US06828533B2
公开(公告)日：2004-12-07
申请号：US10331128
申请日：2002-12-27
申请人： Katsuaki Hayami , Kuniyasu Kubo , Yukihiro Kitada , Takashi Fukuda , Yoshitsugu Kawamura , Eiji Fukunaga , Yoshihito Fukuda , Yuichi Otsuki
发明人： Katsuaki Hayami , Kuniyasu Kubo , Yukihiro Kitada , Takashi Fukuda , Yoshitsugu Kawamura , Eiji Fukunaga , Yoshihito Fukuda , Yuichi Otsuki
IPC分类号： H05B670
CPC分类号： H05B6/6494 , Y10S99/14
摘要： The present invention relates to a microwave heating device, and in particular, a microwave heating device with a microwave heating element mounted on the surface of a heating dish on which food is placed inside a heating chamber. The microwave heating device according to the present invention includes a heating chamber for placing an object to be heated; a magnetron for generating microwaves; a waveguide for supplying the microwaves generated by the magnetron through the bottom of the heating chamber; a heating dish on which the object to be heated is placed; a microwave heating element positioned on the bottom surface of the heating dish to generate heat by absorbing microwaves; and an access passage for allowing the microwaves supplied by the waveguide to reach above the heating dish from below the heating dish. The object on the heating dish is heated by the heating dish, which is heated by the microwave heating element and by microwaves that reach above the heating dish. Therefore, the surface and the inside of the object can be heated in a simple and quick heating operation.
摘要翻译：微波加热装置技术领域本发明涉及一种微波加热装置，特别涉及一种微波加热装置，其中微波加热元件安装在加热盘的表面上，食物放置在加热室内。根据本发明的微波加热装置包括用于放置待加热物体的加热室; 用于产生微波的磁控管; 波导，用于供应由磁控管产生的微波通过加热室的底部; 放置被加热物的加热盘; 位于加热盘底面的微波加热元件，通过吸收微波产生热量; 以及用于允许由波导提供的微波从加热盘的下方到达加热盘的上方的进入通道。加热盘上的物体被加热盘加热，加热盘被微波加热元件加热并通过达到的微波加热在加热盘上方。因此，可以在简单且快速的加热操作中加热物体的表面和内部。

3. 发明授权

US5980684A Processing apparatus for substrates 失效
标题翻译：基板加工装置
公开(公告)号：US5980684A
公开(公告)日：1999-11-09
申请号：US965437
申请日：1997-11-06
申请人： Hisashi Hori , Yoshitsugu Kawamura , Kazuto Obuchi
发明人： Hisashi Hori , Yoshitsugu Kawamura , Kazuto Obuchi
IPC分类号： H01L21/302 , C23C14/56 , H01L21/00 , H01L21/027 , H01L21/3065 , C23C16/00
CPC分类号： H01L21/67017 , C23C14/566
摘要： For shortening the time for introducing an inactive gas, such as nitrogen gas, into a load lock chamber of a processing apparatus for substrates, a buffer tank 19 having a capacity larger than that of the load lock chamber 3 is provided in the path of a pipe for introducing the nitrogen gas into the load lock chamber 3 of the processing apparatus. During processing within the processing chamber 2, such as an ashing process and so on, the nitrogen gas is introduced into the load lock chamber 3 from the buffer tank 19 by operating a valve mechanism 21 to increase the pressure within the load lock chamber 3 up to atmospheric pressure.
摘要翻译：为了缩短将惰性气体（例如氮气）引入到用于基板的处理装置的装载锁定室中的时间，在容量大于载荷锁定室3的路径中设置有容量大于载荷锁定室3的缓冲罐19 用于将氮气引入到处理装置的装载锁定室3中的管道。在处理室2内的加工过程中，例如灰化过程等，氮气通过操作阀机构21从缓冲罐19引入到装载锁定室3中，以将负载锁定室3内的压力升高到大气压力。

4. 发明授权

US5709519A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5709519A
公开(公告)日：1998-01-20
申请号：US7522
申请日：1993-01-22
申请人： Akira Uehara , Mitsuaki Minato , Yoshitsugu Kawamura
发明人： Akira Uehara , Mitsuaki Minato , Yoshitsugu Kawamura
IPC分类号： B25J9/04 , B65G49/07 , C23C14/56 , C23F4/00 , C30B25/12 , H01L21/677 , B65G65/00
CPC分类号： H01J37/32743 , H01L21/67775 , Y10S414/137 , Y10S414/14
摘要： A plasma processing apparatus for etching, ashing, or otherwise processing silicon wafers has a pair of spaced reaction chambers each for processing a silicon wafers in a plasma, a pair of spaced cassette table mechanisms each for supporting a wafer cassette which houses a plurality of wafers therein, and a transfer robot disposed between the pair of spaced reaction chambers and the pair of spaced cassette table mechanisms, for transferring the wafers, one at a time, between the wafer cassette supported by one of the workpiece table mechanisms and one of the reaction chambers. Each of the cassette table mechanisms has a turntable for placing the wafer thereon, the turntable being rotatable to orient the wafer cassette out of physical interference with the robot arm of the transfer robot.
摘要翻译：用于蚀刻，灰化或以其它方式处理硅晶片的等离子体处理装置具有一对间隔开的反应室，每个反应室用于处理等离子体中的硅晶片，一对隔开的盒式工作台机构，每个用于支撑容纳多个晶片的晶片盒以及设置在一对间隔开的反应室和一对隔开的盒式工作台机构之间的传送机械装置，用于一次一个地将晶片转移到由一个工件台机构支撑的晶片盒和反应器之一房间。每个盒式台机构具有用于将晶片放置在其上的转台，转台可转动以使晶片盒与传送机器人的机器人手臂的物理干扰不一致。

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