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    • 4. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20120200159A1
    • 2012-08-09
    • US13366717
    • 2012-02-06
    • Mitsuaki KATAGIRIKen IwakuraYutaka Uematsu
    • Mitsuaki KATAGIRIKen IwakuraYutaka Uematsu
    • H02J4/00
    • H03K19/00361G11C7/02G11C11/4074G11C11/4076G11C11/4096Y10T307/50
    • A semiconductor device includes: first and second power supply wirings VDDQ and VSSQ, respectively; an output circuit 12 arranged between VDDQ and VSSQ; and a noise cancellation circuit 13 arranged between VDDQ and VSSQ. The noise cancellation circuit 13 produces a damped oscillation for the SSN oscillation noise that is generated when a logic level outputted to an output node of the output circuit is switched and that exponentially damps and oscillates at a predetermined period. The damped oscillation produced by the noise cancellation circuit 13 is delayed by half a period of the SSN oscillation noise and has a direction opposite to that of the SSN oscillation noise and hence the damped oscillation and the SSN oscillation noise counteract each other.
    • 半导体器件分别包括:第一和第二电源配线VDDQ和VSSQ; 布置在VDDQ和VSSQ之间的输出电路12; 以及布置在VDDQ和VSSQ之间的噪声消除电路13。 噪声消除电路13产生用于当输出到输出电路的输出节点的逻辑电平被切换并且以预定周期指数衰减和振荡时产生的SSN振荡噪声的阻尼振荡。 由噪声消除电路13产生的阻尼振荡被延迟SSN振荡噪声的一半周期,并且具有与SSN振荡噪声相反的方向,因此阻尼振荡和SSN振荡噪声相互抵消。