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1. 发明申请

US20150102701A1 MICRO-ELECTRO-MECHANICAL SYSTEM DEVICE WITH ENHANCED STRUCTURAL STRENGTH 有权
标题翻译：具有增强结构强度的微电子机械系统装置
公开(公告)号：US20150102701A1
公开(公告)日：2015-04-16
申请号：US14505022
申请日：2014-10-02
申请人： Chih-Ming Sun , Ming-Han Tsai , Hsin-Hui Hsu , WeiChung Wang
发明人： Chih-Ming Sun , Ming-Han Tsai , Hsin-Hui Hsu , WeiChung Wang
IPC分类号： H02K1/06
CPC分类号： H02N1/006 , B81B3/0013 , B81B3/007 , B81B2203/0118
摘要： The invention provides a MEMS device with enhanced structural strength. The MEMS device includes a plurality of metal layers, including a top metal layer with a plurality of metal segments. The metal segments are individually connected to an adjacent metal layer immediately under the top metal layer through at least one supporting pillar, and there is no dielectric layer between the metal segments and the adjacent metal layer immediately under the top metal layer. The metal layers except the top metal layer are respectively connected to their adjacent metal layers through at least one supporting pillar and a dielectric layer filling in between.
摘要翻译：本发明提供了具有增强的结构强度的MEMS器件。 MEMS器件包括多个金属层，包括具有多个金属段的顶部金属层。金属段通过至少一个支撑柱分别连接到顶部金属层正下方的相邻金属层，并且金属片段和紧邻在顶部金属层下面的相邻金属层之间没有电介质层。除了顶部金属层之外的金属层通过填充在其中的至少一个支撑柱和介电层分别连接到其相邻的金属层。

2. 发明申请

US20150097586A1 MICRO-ELECTRO-MECHANICAL SYSTEM DEVICE AND MICRO-ELECTRO- MECHANICAL SYSTEM COMPENSATION STRUCTURE 有权
标题翻译：微电子机械系统装置和微机电系统补偿结构
公开(公告)号：US20150097586A1
公开(公告)日：2015-04-09
申请号：US14499200
申请日：2014-09-28
申请人： Ming-Han Tsai , Chih-Ming Sun , Hsin-Hui Hsu
发明人： Ming-Han Tsai , Chih-Ming Sun , Hsin-Hui Hsu
IPC分类号： B81B7/02 , B81B3/00 , G01R27/26
CPC分类号： B81B3/0086
摘要： This invention provides a MEMS device, including: a mass structure having at least one anchor; at least one flexible structure connected with the mass structure at the at least one anchor; a plurality of top electrodes located above the mass structure and forming a top capacitor circuit with the mass structure; and a plurality of bottom electrodes located under the mass structure and forming a bottom capacitor circuit with the mass structure. The projections of the plural top electrodes on the mass structure along a normal direction of the mass structure are located at opposite sides of the anchor, and the projections of the plural bottom electrodes on the mass structure along a normal direction of the mass structure are located at opposite sides of the anchor. This invention also provides a MEMS compensation structure.
摘要翻译：本发明提供了一种MEMS装置，包括：具有至少一个锚的质量结构; 至少一个柔性结构，与所述质量结构在所述至少一个锚固件处连接; 多个顶部电极位于质量结构之上并形成具有质量结构的顶部电容器电路; 以及位于质量结构下方的多个底部电极，并形成具有质量结构的底部电容器电路。沿着质量结构的法线方向的质量结构上的多个顶部电极的突起位于锚固体的相对侧，沿着质量结构的法线方向在质量结构上的多个底部电极的突起位于在锚的相对侧。本发明还提供一种MEMS补偿结构。

3. 发明授权

US09783409B2 Micro-electro-mechanical system device and micro-electro-mechanical system compensation structure 有权
公开(公告)号：US09783409B2
公开(公告)日：2017-10-10
申请号：US14499200
申请日：2014-09-28
申请人： Ming-Han Tsai , Chih-Ming Sun , Hsin-Hui Hsu
发明人： Ming-Han Tsai , Chih-Ming Sun , Hsin-Hui Hsu
IPC分类号： G01R27/26 , B81B3/00
CPC分类号： B81B3/0086
摘要： This invention provides a MEMS device, including: a mass structure having at least one anchor; at least one flexible structure connected with the mass structure at the at least one anchor; a plurality of top electrodes located above the mass structure and forming a top capacitor circuit with the mass structure; and a plurality of bottom electrodes located under the mass structure and forming a bottom capacitor circuit with the mass structure. The projections of the plural top electrodes on the mass structure along a normal direction of the mass structure are located at opposite sides of the anchor, and the projections of the plural bottom electrodes on the mass structure along a normal direction of the mass structure are located at opposite sides of the anchor. This invention also provides a MEMS compensation structure.

4. 发明授权

US09302901B2 Micro-electro-mechanical system device with enhanced structural strength 有权
标题翻译：具有增强结构强度的微机电系统装置
公开(公告)号：US09302901B2
公开(公告)日：2016-04-05
申请号：US14505022
申请日：2014-10-02
申请人： Chih-Ming Sun , Ming-Han Tsai , Hsin-Hui Hsu , WeiChung Wang
发明人： Chih-Ming Sun , Ming-Han Tsai , Hsin-Hui Hsu , WeiChung Wang
IPC分类号： H01L29/84 , B81B3/00
CPC分类号： H02N1/006 , B81B3/0013 , B81B3/007 , B81B2203/0118
摘要： The invention provides a MEMS device with enhanced structural strength. The MEMS device includes a plurality of metal layers, including a top metal layer with a plurality of metal segments. The metal segments are individually connected to an adjacent metal layer immediately under the top metal layer through at least one supporting pillar, and there is no dielectric layer between the metal segments and the adjacent metal layer immediately under the top metal layer. The metal layers except the top metal layer are respectively connected to their adjacent metal layers through at least one supporting pillar and a dielectric layer filling in between.
摘要翻译：本发明提供了具有增强的结构强度的MEMS器件。 MEMS器件包括多个金属层，包括具有多个金属段的顶部金属层。金属段通过至少一个支撑柱分别连接到顶部金属层正下方的相邻金属层，并且金属片段和紧邻在顶部金属层下面的相邻金属层之间没有电介质层。除了顶部金属层之外的金属层通过填充在其中的至少一个支撑柱和介电层分别连接到其相邻的金属层。

5. 发明申请

US20160173002A1 MICRO-ELECTRO-MECHANICAL SYSTEM DEVICE WITH ENHANCED STRUCTURAL STRENGTH 审中-公开
公开(公告)号：US20160173002A1
公开(公告)日：2016-06-16
申请号：US15053370
申请日：2016-02-25
申请人： Chih-Ming Sun , Ming-Han Tsai , Hsin-Hui Hsu , WeiChung Wang
发明人： Chih-Ming Sun , Ming-Han Tsai , Hsin-Hui Hsu , WeiChung Wang
IPC分类号： H02N1/00
CPC分类号： H02N1/006 , B81B3/0013 , B81B3/007 , B81B2203/0118
摘要： The invention provides a MEMS device with enhanced structural strength. The MEMS device includes a plurality of metal layers, including a top metal layer with a plurality of metal segments. The metal segments are individually connected to an adjacent metal layer immediately under the top metal layer through at least one supporting pillar, and there is no dielectric layer between the metal segments and the adjacent metal layer immediately under the top metal layer. The metal layers except the top metal layer are respectively connected to their adjacent metal layers through at least one supporting pillar and a dielectric layer filling in between.

6. 发明申请

US20160090295A1 MICRO-ELECTRO-MECHANICAL SYSTEM DEVICE WITH LOW SUBSTRATE CAPACITIVE COUPLING EFFECT 审中-公开
标题翻译：具有低基板电容耦合效应的微电子机械系统装置
公开(公告)号：US20160090295A1
公开(公告)日：2016-03-31
申请号：US14790490
申请日：2015-07-02
申请人： Ming-Han Tsai , Hsin-Hui Hsu
发明人： Ming-Han Tsai , Hsin-Hui Hsu
IPC分类号： B81B7/00
CPC分类号： B81C1/00246 , B81B3/0086 , B81C2203/0742
摘要： The present invention discloses a MEMS device with low substrate capacitive coupling effect, which is manufactured by a CMOS manufacturing process. The MEMS device includes: a substrate; at least one anchor, including an oxide layer connected with the substrate and a connecting structure on the oxide layer; and at least one micro-electro-mechanical structure, connected with the connecting structure. The oxide layer is made by a process step corresponding to a process step for making a field oxide which defines a device region of a transistor in the CMOS manufacturing process. The connecting structure has at least one layer which has an out-of-plane projected area that is smaller than an out-of-plane projected area of the oxide layer. The substrate has plural recesses at an upper surface of the substrate facing the micro-electro-mechanical structure.
摘要翻译：本发明公开了一种通过CMOS制造工艺制造的具有低衬底电容耦合效应的MEMS器件。 MEMS器件包括：衬底; 至少一个锚，包括与所述基底连接的氧化物层和所述氧化物层上的连接结构; 以及与连接结构连接的至少一个微电子机械结构。该氧化物层是通过对应于制造在CMOS制造工艺中限定晶体管的器件区域的场氧化物的工艺步骤的工艺步骤制成的。连接结构具有至少一个层，该层具有小于氧化物层的平面外投影面积的平面外投影面积。基板在面向微电子机械结构的基板的上表面具有多个凹部。

7. 发明授权

US08952463B2 MEMS structure preventing stiction 有权
标题翻译： MEMS结构防止静电
公开(公告)号：US08952463B2
公开(公告)日：2015-02-10
申请号：US12800829
申请日：2010-05-24
申请人： Chuan-Wei Wang , Sheng-Ta Lee , Hsin-Hui Hsu
发明人： Chuan-Wei Wang , Sheng-Ta Lee , Hsin-Hui Hsu
IPC分类号： H01L27/14 , B81B3/00
CPC分类号： B81B3/001
摘要： A MEMS (Micro-Electro-Mechanical-System) structure preventing stiction, comprising: a substrate; and at least two structural layers above the substrate, wherein at least one of the at least two structural layers is a movable part, and anyone or more of the at least two structural layers is provided with at least one bump to prevent the movable part from sticking to another portion of the MEMS structure.
摘要翻译：一种防止静电的MEMS（微电子机械系统）结构，包括：基板; 以及至少两个结构层，其中所述至少两个结构层中的至少一个是可移动部分，并且所述至少两个结构层中的任何一个或多个设置有至少一个凸起，以防止所述可移动部件粘附到MEMS结构的另一部分。

8. 发明授权

US08729660B2 MEMS integrated chip with cross-area interconnection 有权
公开(公告)号：US08729660B2
公开(公告)日：2014-05-20
申请号：US13214709
申请日：2011-08-22
申请人： Hsin-Hui Hsu , Chuan-Wei Wang , Sheng-Ta Lee
发明人： Hsin-Hui Hsu , Chuan-Wei Wang , Sheng-Ta Lee
IPC分类号： H01L21/70 , H01L29/84
CPC分类号： B81C1/00238
摘要： The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area.

9. 发明申请

US20120017427A1 METHOD FOR FORMING ANTENNA STRUCTURE 有权
标题翻译：形成天线结构的方法
公开(公告)号：US20120017427A1
公开(公告)日：2012-01-26
申请号：US12969516
申请日：2010-12-15
申请人： Wen-Kuei Lo , Sheng-Chieh Chang , Bau-Yi Huang , Chi-Wen Tsai , Hsin-Hui Hsu , Tzuh-Suan Wang
发明人： Wen-Kuei Lo , Sheng-Chieh Chang , Bau-Yi Huang , Chi-Wen Tsai , Hsin-Hui Hsu , Tzuh-Suan Wang
IPC分类号： H01P11/00
CPC分类号： H01Q1/243 , H01Q1/38 , H01Q9/04 , Y10T29/49002 , Y10T29/49016
摘要： A method for forming an antenna structure is provided, including the following steps of: providing a non-conductive frame and disposing a plating resist material on the non-conductive frame, removing a part of the plating resist material within a predetermined region on the non-conductive frame and forming a roughened surface on the non-conductive frame within the predetermined region by laser marking, forming a medium layer on the roughened surface, wherein the medium layer comprises Pd or Ag, removing the plating resist material on the non-conductive frame, and forming a metal layer on the medium layer.
摘要翻译：提供了一种用于形成天线结构的方法，包括以下步骤：在非导电框架上设置非导电框架并设置电镀抗蚀剂材料，在非导电框架上的预定区域内去除一部分电镀抗蚀剂材料，通过激光标记在预定区域内的非导电框架上形成粗糙表面，在粗糙化表面上形成介质层，其中介质层包括Pd或Ag，在非导电框架上除去电镀抗蚀剂材料并在介质层上形成金属层。

10. 发明申请

US20100297461A1 COLOR FILTER BY COPPER AND SILVER FILM AND METHOD FOR MAKING SAME 有权
标题翻译：铜和铜膜的彩色滤光片及其制造方法
公开(公告)号：US20100297461A1
公开(公告)日：2010-11-25
申请号：US12470856
申请日：2009-05-22
申请人： Sen-Huang Huang , Chin-Poh Pang , Hsin-Hui Hsu
发明人： Sen-Huang Huang , Chin-Poh Pang , Hsin-Hui Hsu
IPC分类号： B22F7/02 , C23C28/02
CPC分类号： C25D5/10 , C22C5/06 , C22C9/00 , C23C14/18 , C23C28/322 , C23C28/34 , C23C28/341 , C23C28/36 , C25D5/48 , G02B5/22 , Y10T428/12007
摘要： The present invention discloses a color filter by copper and silver film, comprising: a lower copper layer; a lower silver layer formed on the lower copper layer; a medium formed on the lower silver layer; an upper copper layer formed on the medium; and an upper silver layer formed on the upper copper layer.
摘要翻译：本发明公开了一种铜和银膜的滤色器，包括：下铜层; 形成在下铜层上的下层银层; 形成在下层银层上的介质; 在介质上形成的上铜层; 以及形成在上铜层上的上银层。

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