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1. 发明授权

US08213085B2 Image sensor device with high photosensitivity 有权
标题翻译：具有高感光度的图像传感器
公开(公告)号：US08213085B2
公开(公告)日：2012-07-03
申请号：US12010071
申请日：2008-01-18
申请人： Wu-Chieh Liu , Chin-Poh Pang
发明人： Wu-Chieh Liu , Chin-Poh Pang
IPC分类号： G02B1/10 , G02B5/18
CPC分类号： H01L27/14625 , Y10T428/24355 , Y10T428/24479
摘要： An anti-reflection structure for transmitting a light source is disclosed. The anti-reflection structure comprises a first dielectric layer of a first refractive index and a second dielectric layer of a second refractive index different from the first refractive index. The first dielectric layer has a plurality of protrusions randomly arranged on a top surface thereof, in which the plurality of protrusions and the intervals therebetween has an average size smaller than the wavelength of the light source. The second dielectric layer has a bottom surface conformally attached to the top surface of the first dielectric layer. The invention also discloses an image sensor device having the anti-reflection structure.
摘要翻译：公开了一种用于传输光源的防反射结构。抗反射结构包括第一折射率的第一电介质层和与第一折射率不同的第二折射率的第二电介质层。第一电介质层具有随机地设置在其顶表面上的多个突起，其中多个突起及其间的间隔具有比光源的波长更小的平均尺寸。第二电介质层具有保形地附接到第一电介质层的顶表面的底表面。本发明还公开了一种具有防反射结构的图像传感器装置。

2. 发明授权

US08878132B2 Photosensor device and method for determining incident light 有权
标题翻译：用于确定入射光的光电传感器装置和方法
公开(公告)号：US08878132B2
公开(公告)日：2014-11-04
申请号：US13657680
申请日：2012-10-22
申请人： En-Feng Hsu , Chin-Poh Pang
发明人： En-Feng Hsu , Chin-Poh Pang
IPC分类号： G01J5/20
CPC分类号： H01L31/1013 , G01J1/0437 , G01J1/4204 , G01J1/4228
摘要： A photosensor device includes a plurality of first well structures, a light shielding layer, and a plurality of second well structures. The first well structures are disposed in a substrate. The light shielding layer disposed is on the substrate; it covers a portion of the first well structures and exposes the rest portion of the first well structures. The covered first well structures are adjacent to the exposed first well structures exposed. The exposed first well structures generate a first photocurrent according to incident light. The second well structures generate a second photocurrent according to incident light. A total surface area of the second well structures is substantially equal to a total surface area of the exposed first well structures. A method for determining the incident light is also provided.
摘要翻译：光传感器装置包括多个第一阱结构，遮光层和多个第二阱结构。第一阱结构设置在基板中。所述遮光层设置在所述基板上; 它覆盖第一井结构的一部分并暴露第一井结构的其余部分。覆盖的第一阱结构与暴露的暴露的第一阱结构相邻。暴露的第一阱结构根据入射光产生第一光电流。第二阱结构根据入射光产生第二光电流。第二阱结构的总表面积基本上等于暴露的第一阱结构的总表面积。还提供了一种用于确定入射光的方法。

3. 发明授权

US08221888B2 Color filter by copper and silver film and method for making same 有权
公开(公告)号：US08221888B2
公开(公告)日：2012-07-17
申请号：US12470856
申请日：2009-05-22
申请人： Sen-Huang Huang , Chin-Poh Pang , Hsin-Hui Hsu
发明人： Sen-Huang Huang , Chin-Poh Pang , Hsin-Hui Hsu
IPC分类号： B32B15/00 , H01J40/14 , F21V9/06
CPC分类号： C25D5/10 , C22C5/06 , C22C9/00 , C23C14/18 , C23C28/322 , C23C28/34 , C23C28/341 , C23C28/36 , C25D5/48 , G02B5/22 , Y10T428/12007
摘要： The present invention discloses a color filter by copper and silver film, comprising: a lower copper layer; a lower silver layer formed on the lower copper layer; a medium formed on the lower silver layer; an upper copper layer formed on the medium; and an upper silver layer formed on the upper copper layer.

4. 发明授权

US07897986B2 Microlens array and image sensing device using the same 有权
标题翻译：微透镜阵列和图像感测装置使用相同
公开(公告)号：US07897986B2
公开(公告)日：2011-03-01
申请号：US12104941
申请日：2008-04-17
申请人： Wu-Chieh Liu , Chin-Poh Pang , Chi-Xiang Tseng , Cheng-Lin Yang
发明人： Wu-Chieh Liu , Chin-Poh Pang , Chi-Xiang Tseng , Cheng-Lin Yang
IPC分类号： H01L31/0232 , H01L27/146 , H01L33/00
CPC分类号： G02B3/0056 , G02B3/0043 , G02B27/0025 , G02B27/0075 , H01L27/14605 , H01L27/14627
摘要： A microlens array is provided, including a base layer with a plurality of first microlenses formed over a first region thereof, wherein the first microlenses are formed with a first height. A plurality of second microlenses are formed over a second region of the base layer, wherein the second region surrounds the first region and the second microlenses are formed with a second height lower than the first height. A plurality of third microlenses are formed over a third region of the base layer, wherein the third region surrounds the second and three regions, and the microlenses are formed with a third height lower than the first and second heights.
摘要翻译：提供了一种微透镜阵列，其包括在其第一区域上形成有多个第一微透镜的基底层，其中第一微透镜形成有第一高度。多个第二微透镜形成在基底层的第二区域上，其中第二区域包围第一区域，第二微透镜形成有比第一高度低的第二高度。多个第三微透镜形成在基底层的第三区域上，其中第三区域围绕第二和三个区域，并且微透镜形成有比第一和第二高度低的第三高度。

5. 发明申请

US20100320552A1 CMOS Image Sensor 审中-公开
标题翻译： CMOS图像传感器
公开(公告)号：US20100320552A1
公开(公告)日：2010-12-23
申请号：US12487776
申请日：2009-06-19
申请人： Chien-Hsien Tseng , Chin-Poh Pang
发明人： Chien-Hsien Tseng , Chin-Poh Pang
IPC分类号： H01L31/00
CPC分类号： H01L27/14621 , H01L27/14627 , H01L27/14632
摘要： The present invention discloses a CMOS image sensor comprising: a substrate; a photo diode formed in the substrate; an interconnection formed on the substrate, wherein the portions of the interconnection are insulated from one another by a dielectric material; a light passage penetrating through at least part of the dielectric material; a micro lens above the light passage; and a color filter above the micro lens.
摘要翻译：本发明公开了一种CMOS图像传感器，包括：基板; 形成在基板中的光电二极管; 形成在所述基板上的互连，其中所述互连部分通过介电材料彼此绝缘; 穿透至少部分电介质材料的光通道; 光通道上方的微透镜; 和微透镜上方的滤色器。

6. 发明申请

US20090305453A1 METHOD OF FABRICATING IMAGE SENSOR DEVICE 审中-公开
标题翻译：制作图像传感器装置的方法
公开(公告)号：US20090305453A1
公开(公告)日：2009-12-10
申请号：US12136433
申请日：2008-06-10
申请人： Cheng-Lin YANG , Chin-Poh PANG , Wu-Chieh LIU , Chi-Xiang TSENG
发明人： Cheng-Lin YANG , Chin-Poh PANG , Wu-Chieh LIU , Chi-Xiang TSENG
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14605 , H01L27/14627
摘要： A method for fabricating an image sensor device is disclosed. A substrate having a sensing area comprising a pixel array therein is provided. A photoresist layer is coated over the substrate. Exposure is performed on at least two regions of the photoresist layer by at least two binary half-tone masks, respectively, in which a first and second binary half-tone masks of the two binary half-tone masks have different optical transparency distributions. Development is performed on the exposed photoresist layer to form a convex microlens array corresponding to the pixel array of the sensing area and comprising at least two microlenses with different convex profiles.
摘要翻译：公开了一种用于制造图像传感器装置的方法。提供具有包括其中的像素阵列的感测区域的衬底。光致抗蚀剂层涂覆在基材上。分别通过至少两个二进制半色调掩模在光致抗蚀剂层的至少两个区域上进行曝光，其中两个二进制半色调蒙版的第一和第二二进制半色调蒙版具有不同的光学透明度分布。在暴露的光致抗蚀剂层上进行显影以形成对应于感测区域的像素阵列的凸形微透镜阵列，并且包括具有不同凸形轮廓的至少两个微透镜。

7. 发明申请

US20090261439A1 MICROLENS ARRAY AND IMAGE SENSING DEVICE USING THE SAME 有权
标题翻译：微镜阵列和图像感测装置
公开(公告)号：US20090261439A1
公开(公告)日：2009-10-22
申请号：US12104941
申请日：2008-04-17
申请人： Wu-Chieh Liu , Chin-Poh Pang , Chi-Xiang Tseng , Cheng-Lin Yang
发明人： Wu-Chieh Liu , Chin-Poh Pang , Chi-Xiang Tseng , Cheng-Lin Yang
IPC分类号： H01L31/00
CPC分类号： G02B3/0056 , G02B3/0043 , G02B27/0025 , G02B27/0075 , H01L27/14605 , H01L27/14627
摘要： A microlens array is provided, including a base layer with a plurality of first microlenses formed over a first region thereof, wherein the first microlenses are formed with a first height. A plurality of second microlenses are formed over a second region of the base layer, wherein the second region surrounds the first region and the second microlenses are formed with a second height lower than the first height. A plurality of third microlenses are formed over a third region of the base layer, wherein the third region surrounds the second and three regions, and the microlenses are formed with a third height lower than the first and second heights.
摘要翻译：提供了一种微透镜阵列，其包括在其第一区域上形成有多个第一微透镜的基底层，其中第一微透镜形成有第一高度。多个第二微透镜形成在基底层的第二区域上，其中第二区域包围第一区域，第二微透镜形成有比第一高度低的第二高度。多个第三微透镜形成在基底层的第三区域上，其中第三区域围绕第二和三个区域，并且微透镜形成有比第一和第二高度低的第三高度。

8. 发明申请

US20090096900A1 IMAGE SENSOR DEVICE 审中-公开
标题翻译：图像传感器设备
公开(公告)号：US20090096900A1
公开(公告)日：2009-04-16
申请号：US11871074
申请日：2007-10-11
申请人： Chin-Poh PANG , Wu-Chieh Liu
发明人： Chin-Poh PANG , Wu-Chieh Liu
IPC分类号： H04N5/335
CPC分类号： H01L27/14621 , H01L27/1464
摘要： An image sensor device is disclosed. The device comprises a plurality of unit pixels, and each unit pixel comprises a substrate and a non-absorptive color separating device overlying the substrate. The substrate comprises a plurality of photodiodes horizontally arranged in a row, and at least one bevel boundary area between the photodiodes. The non-absorptive color separating device disperses incident white light into components thereof arranged in the row according to a gradient of wave lengths of the components of white light, and introduces the components of white light to the photodiodes.
摘要翻译：公开了一种图像传感器装置。该装置包括多个单位像素，并且每个单位像素包括衬底和覆盖衬底的非吸收色分离装置。基板包括水平布置成一行的多个光电二极管和光电二极管之间的至少一个斜边边界区域。非吸收色分离装置根据白光成分的波长的梯度将入射的白光分散在排列成行的成分中，并将白光的成分引入光电二极管。

9. 发明申请

US20140110581A1 PHOTOSENSOR DEVICE AND METHOD FOR DETERMINING INCIDENT LIGHT 有权
标题翻译：照相机装置和确定偶发光的方法
公开(公告)号：US20140110581A1
公开(公告)日：2014-04-24
申请号：US13657680
申请日：2012-10-22
申请人： En-Feng Hsu , Chin-Poh Pang
发明人： En-Feng Hsu , Chin-Poh Pang
IPC分类号： H01L31/0232 , G01J5/20
CPC分类号： H01L31/1013 , G01J1/0437 , G01J1/4204 , G01J1/4228
摘要： A photosensor device includes a plurality of first well structures, a light shielding layer, and a plurality of second well structures. The first well structures are disposed in a substrate. The light shielding layer disposed is on the substrate; it covers a portion of the first well structures and exposes the rest portion of the first well structures. The covered first well structures are adjacent to the exposed first well structures exposed. The exposed first well structures generate a first photocurrent according to incident light. The second well structures generate a second photocurrent according to incident light. A total surface area of the second well structures is substantially equal to a total surface area of the exposed first well structures. A method for determining the incident light is also provided.
摘要翻译：光传感器装置包括多个第一阱结构，遮光层和多个第二阱结构。第一阱结构设置在基板中。所述遮光层设置在所述基板上; 它覆盖第一井结构的一部分并暴露第一井结构的其余部分。覆盖的第一阱结构与暴露的暴露的第一阱结构相邻。暴露的第一阱结构根据入射光产生第一光电流。第二阱结构根据入射光产生第二光电流。第二阱结构的总表面积基本上等于暴露的第一阱结构的总表面积。还提供了一种用于确定入射光的方法。

10. 发明申请

US20090101947A1 Image sensor device and fabrication method thereof 审中-公开
标题翻译：图像传感器装置及其制造方法
公开(公告)号：US20090101947A1
公开(公告)日：2009-04-23
申请号：US11907793
申请日：2007-10-17
申请人： Chien-Pang Lin , Chin-Poh Pang , Wu-Chieh Liu , Shiu-Fang Yen
发明人： Chien-Pang Lin , Chin-Poh Pang , Wu-Chieh Liu , Shiu-Fang Yen
IPC分类号： H01L31/062 , H01L21/00
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14685
摘要： An image sensor device is disclosed. The image sensor device comprises a substrate having a pixel array therein. A first transparent layer with a curved surface is disposed on the substrate. A micro lens array is conformally disposed on the curved surface of the first transparent layer and corresponds to the pixel array in the substrate. The invention also discloses an electronic assembly for an image sensor device and a fabrication method thereof.
摘要翻译：公开了一种图像传感器装置。图像传感器装置包括其中具有像素阵列的衬底。具有弯曲表面的第一透明层设置在基板上。微透镜阵列保形地设置在第一透明层的弯曲表面上并对应于衬底中的像素阵列。本发明还公开了一种用于图像传感器装置的电子组件及其制造方法。

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