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    • 9. 发明授权
    • Multilayer positive temperature coefficient thermistor device
    • 多层正温度系数热敏电阻器件
    • US5493266A
    • 1996-02-20
    • US228731
    • 1994-04-18
    • Kiyomi SasakiHideaki Niimi
    • Kiyomi SasakiHideaki Niimi
    • H01C1/14H01C7/02H01C7/10
    • H01C7/18H01C1/1406H01C7/008H01C7/021Y10T29/49085
    • A plurality of semiconductor substrates having positive resistance-temperature coefficients are bonded to each other through a glass layer to be stacked. First and second terminal electrodes are formed on end surfaces of such a stacked structure respectively. First and second ohmic electrodes are formed on respective major surfaces of each semiconductor substrate, and the first and second ohmic electrodes are connected to the first and second terminal electrodes respectively. The ohmic electrodes contain a metal, other than silver, exhibiting an ohmic property, such as zinc, aluminum, nickel or chromium, for example. The terminal electrodes also contain a metal, other than silver, exhibiting an ohmic property. The terminal electrodes may be provided on surfaces thereof with layers which are made of a metal having excellent solderability.
    • 具有正电阻 - 温度系数的多个半导体衬底通过待堆叠的玻璃层彼此接合。 第一和第二端子电极分别形成在这种堆叠结构的端面上。 第一和第二欧姆电极形成在每个半导体衬底的相应主表面上,并且第一和第二欧姆电极分别连接到第一和第二端子电极。 欧姆电极例如含有除银以外的金属,表现出欧姆性,例如锌,铝,镍或铬。 端子电极还含有除银以外的金属,表现出欧姆性质。 端子电极可以在其表面上设置有由具有优异的可焊性的金属制成的层。