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1. 发明授权

US06708271B1 INTERACTIVE MULTI-MODULE SYSTEM HAVING A COMMUNICATION MANAGER FOR ACHIEVING LINKED OPERATION OF PLURALITY OF MODULES AND FOR DEFINING WHETHER AND HOW AN INDIVIDUAL MODULE CAN ACCESS A PARTICULAR FUNCTION 失效
标题翻译：交互式多模块系统，具有实现多模块连接操作和定义的通信管理器，无论个体模块是否可以访问特定功能
公开(公告)号：US06708271B1
公开(公告)日：2004-03-16
申请号：US09633144
申请日：2000-08-04
申请人： Mikio Sasaki , Katsushi Asami , Kenzo Ito , Satoshi Hirose , Noriaki Takemoto
发明人： Mikio Sasaki , Katsushi Asami , Kenzo Ito , Satoshi Hirose , Noriaki Takemoto
IPC分类号： G06F900
CPC分类号： G06F9/542 , G06F2209/543
摘要： In a multi-module system, information required for linked operation of a plurality of modules is stored in a communication manager as profiles written in a specific format. The modules operate by referring to these profiles, and update the profiles as appropriate. The modules thereafter operate based on the updated profiles, and appropriately updates the profiles. The communication manager thus enables the linked operation among the modules based on continuously updated profiles.
摘要翻译：在多模块系统中，多个模块的链接操作所需的信息作为以特定格式写成的简档存储在通信管理器中。模块通过参考这些配置文件进行操作，并根据需要更新配置文件。然后，模块基于更新的简档进行操作，并适当地更新配置文件。因此，通信管理器基于不断更新的简档来实现模块之间的链接操作。

2. 发明授权

US09553575B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09553575B2
公开(公告)日：2017-01-24
申请号：US14436767
申请日：2012-12-21
申请人： Satoshi Hirose
发明人： Satoshi Hirose
IPC分类号： H03K17/567 , H01L23/528 , H01L29/423
CPC分类号： H03K17/567 , H01L23/528 , H01L29/4232 , H01L2224/48091 , H01L2224/49175 , H01L2924/00014
摘要： Two or more pads and are connected to a gate region, so that a pad for applying a gate voltage can be selected. In the case where, for example, the peripheral region is likely to overheat, a turn-on voltage is applied to the first pad to turn on the peripheral region later than the central region, and a turn-off voltage is applied to the second pad to turn off the peripheral region earlier than the central region. The problem that the peripheral region is likely to overheat can be addressed. In the case where the flow of an excess current raises the temperature, the turn-off voltage is applied to the second pad. The problem that the temperature is likely to rise in the peripheral region when an excess current flows can be addressed.
摘要翻译：两个或更多个焊盘并连接到栅极区域，从而可以选择用于施加栅极电压的焊盘。在例如周边区域容易过热的情况下，向第一焊盘施加接通电压，使得比中心区域晚的周边区域导通，对第二焊盘施加关断电压垫以比中央区域更早地关闭外围区域。可以解决周边地区可能过热的问题。在过电流的流动升高温度的情况下，关闭电压被施加到第二焊盘。可以解决当过剩电流流动时周边区域温度可能上升的问题。

3. 发明申请

US20110007536A1 DEVICE FOR DRIVING INVERTER 有权
标题翻译：用于驱动逆变器的装置
公开(公告)号：US20110007536A1
公开(公告)日：2011-01-13
申请号：US12921956
申请日：2009-02-23
申请人： Naoyoshi Takamatsu , Satoshi Hirose
发明人： Naoyoshi Takamatsu , Satoshi Hirose
IPC分类号： H02M7/537
CPC分类号： H02M1/08 , H02M2001/0029 , H03K17/163 , H03K17/166 , H03K17/168 , H03K2217/0036
摘要： Disclosed is a device for driving an inverter having a semiconductor switching element. A gate voltage calculating unit (20) calculates a surge voltage from the temperature, current, and DC-side voltage of each of IGBTs of the inverter and compares the surge voltage with the breakdown voltage of the element. The gate voltage calculating unit (20) commands a gate voltage control unit (22) to set a gate voltage higher than the normal value (reference value) in the case of judging that the difference between the element breakdown voltage and the surge voltage exceeds a predetermined threshold voltage and that a margin exists in the surge voltage. The voltage control unit (22) performs switching control of gates of the IGBTs according to the gate voltage command higher than the reference voltage to thereby reduce stationary losses of the IGBTs.
摘要翻译：公开了一种用于驱动具有半导体开关元件的逆变器的装置。栅极电压计算单元（20）根据逆变器的每个IGBT的温度，电流和直流侧电压来计算浪涌电压，并将该浪涌电压与元件的击穿电压进行比较。在判定元件击穿电压与浪涌电压之间的差异超过a的情况下，栅极电压计算单元（20）命令栅极电压控制单元（22）设定高于正常值（基准值）的栅极电压预定的阈值电压，并且在浪涌电压中存在余量。电压控制单元（22）根据高于基准电压的栅极电压指令来对IGBT的栅极进行开关控制，由此减小IGBT的稳定损耗。

4. 发明授权

US06590643B2 Method and apparatus for measuring viewing angle characteristic and positional characteristic of luminance 失效
标题翻译：用于测量视角特性和亮度位置特性的方法和装置
公开(公告)号：US06590643B2
公开(公告)日：2003-07-08
申请号：US09818452
申请日：2001-03-27
申请人： Hiroshi Kubota , Yoshiya Egashira , Tomoaki Furuse , Satoshi Hirose
发明人： Hiroshi Kubota , Yoshiya Egashira , Tomoaki Furuse , Satoshi Hirose
IPC分类号： G01J100
CPC分类号： G01J1/4228 , G01J1/0242 , G01J1/04 , G01J1/0403 , G01J1/0411 , G01J1/0414
摘要： An apparatus is provided for measuring viewing angle characteristic of luminance and positional characteristic of a radiant object under measurement, by moving a condensing device and an imaging device relative to the object. The apparatus includes a first mechanism for moving the light receiving elements of the condensing device while keeping constant the solid angle subtended by the light receiving element at the radiant area. A second mechanism is provided for moving the imaging device in association with the condensing device, while maintaining thereon the image of the radiant area. A memory is provide. A circuit is provided for calculating viewing angle dependent and position dependent characteristics. A display device is provided for displaying radiance characteristic and distribution characteristic of the object and the result of evaluation of the calculated characteristic of luminance.
摘要翻译：提供一种用于通过相对于物体移动冷凝装置和成像装置来测量测量的辐射物体的亮度和位置特性的视角特性的装置。该装置包括用于移动聚光装置的光接收元件的第一机构，同时保持由受光元件在辐射区域对着的立体角。提供第二机构，用于与冷凝装置相关联地移动成像装置，同时在其上保持辐射区域的图像。提供记忆。提供了一种用于计算视角和位置相关特性的电路。提供一种用于显示物体的辐射特性和分布特性的显示装置以及所计算的亮度特性的评估结果。

5. 发明授权

US5172399A Semiconductor charge transfer device including charge quantity detection 失效
标题翻译：半导体电荷转移装置包括电荷量检测
公开(公告)号：US5172399A
公开(公告)日：1992-12-15
申请号：US755774
申请日：1991-09-06
申请人： Satoshi Hirose
发明人： Satoshi Hirose
IPC分类号： H01L29/762 , G11C19/28 , G11C27/04 , H01L21/339 , H01L29/768
CPC分类号： G11C19/285 , G11C27/04 , H01L29/76816
摘要： A charge transfer device includes a signal charge transfer region including a first conductivity type first low dopant concentration semiconductor region on which transfer electrodes are disposed via an insulating film, a charge storage region including a first conductivity type second low dopant concentration semiconductor region connected to the first low dopant concentration semiconductor region, a second conductivity type semiconductor region disposed on the charge storage region, a first conductivity type high dopant concentration semiconductor region disposed at the surface of and spaced from the first conductivity type second low dopant concentration semiconductor region at a region opposite the first conductivity type first low dopant concentration semiconductor region, and a detector for detecting the quantity of signal charges stored in the charge storage region from the resistance value between two points in a portion of said second conductivity type semiconductor region. The charge storage region is completely depleted during the resetting operation, reset noise is eliminated, and S/N ratio is enhanced.
摘要翻译：电荷转移装置包括信号电荷转移区域，该信号电荷转移区域包括通过绝缘膜设置有转移电极的第一导电类型的第一低掺杂浓度半导体区域;电荷存储区域，包括连接到第一导电类型的第一低掺杂剂浓度半导体区域第一低掺杂剂浓度半导体区域，设置在电荷存储区域上的第二导电类型半导体区域，设置在第一导电类型第二低掺杂剂浓度半导体区域的表面并与其间隔的第一导电型高掺杂剂浓度半导体区域与第一导电类型的第一低掺杂剂浓度半导体区域相对，以及检测器，用于从所述第二导电类型半导体区域的一部分中的两个点之间的电阻值检测存储在电荷存储区域中的信号电荷的量。在复位操作期间，电荷存储区域完全耗尽，消除了复位噪声，并且提高了S / N比。

6. 发明授权

US5132132A Coating method for magnetic recording medium 失效
标题翻译：磁记录介质涂层方法
公开(公告)号：US5132132A
公开(公告)日：1992-07-21
申请号：US714426
申请日：1991-06-12
申请人： Masaru Watanabe , Satoshi Hirose
发明人： Masaru Watanabe , Satoshi Hirose
IPC分类号： B05D1/26 , B05D5/12 , G11B5/842 , G11B5/848
CPC分类号： G11B5/842 , G11B5/848 , Y10S428/90
摘要： An apparatus for coating on a support a first magnetic coating solution so as to form a lower layer on the support continuously travelling and then coating a second magnetic coating solution on the first magnetic coating solution, which is in a non-dried state, so as to form an upper layer thereon to thereby produce a two-layer type magnetic recording medium. The apparatus comprises a first die for coating the first magnetic coating solution which includes first and second lip portions, the second lip portion having a top surface curved. The apparatus further comprises a second die for coating the second magnetic coating solution which includes first and second lip portions, the second lip portion similarly having a top surface curved. The first lip portion of each of said first and second dies has an edge A and the second lip portion has at both ends of the curved top surface edges B and C. The edge B is formed to be in confronting relation to the edge A of the first lip portion. The edge A of the first lip portion is arranged to be substantially on a tangential line of the edge B of the second lip portion and the support is arranged to be travelled so as to approach each die at a loading angle to be substantially parallel to the tangential line of the edge B of the second lip portion and to be separated therefrom at an unloading angle to be substantially parallel to an tangential line of the edge C of said second lip portion.

7. 发明授权

US5040038A Solid-state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US5040038A
公开(公告)日：1991-08-13
申请号：US262056
申请日：1988-10-24
申请人： Naoki Yutani , Sotoju Asai , Shiro Hine , Satoshi Hirose , Hidekazu Yamamoto , Masashi Ueno
发明人： Naoki Yutani , Sotoju Asai , Shiro Hine , Satoshi Hirose , Hidekazu Yamamoto , Masashi Ueno
IPC分类号： H01L27/148 , H04N5/335 , H04N5/365 , H04N5/372
CPC分类号： H01L27/14831
摘要： A solid-state image sensor comprises photoelectric converting devices (22) formed on a p type semiconductor substrate (1), transfer gates (26) for reading signal charges therefrom, scanning lines (21) for selecting the transfer gates (26), and transfer electrodes (11) of the first layer and transfer electrodes (12) of the second layer alternately disposed for transferring in the vertical direction the read signal charges. All the electrodes of the transfer gates (26) are formed integrally with the transfer electrodes (12) of the second layer, with the result that all the electrodes of the transfer gates (26) are common to the transfer electrodes of the same layer (the second layer). Although the potential wall (340) is formed in the transfer channel (3) beneath the transfer electrode (12) connected to the transfer gate (26), the same is insulated from adjacent the transfer electrode (11) on the charge transfer direction side. As a result, when a voltage is applied to the transfer electrode adjacent thereto, the signal charges are fully transferred.
摘要翻译：固态图像传感器包括形成在p型半导体衬底（1）上的光电转换器件（22），用于读取信号电荷的传输门（26），用于选择传输门（26）的扫描线（21）交替地设置第一层的电极（11）和第二层的传输电极（12），用于在垂直方向上传送读取信号电荷。传输栅极（26）的所有电极与第二层的传输电极（12）整体形成，结果是传输栅极（26）的所有电极对同一层的传输电极是共同的（第二层）。尽管在连接到传输栅极（26）的传输电极（12）下方的传输沟道（3）中形成了电位壁（340），但是在电荷转移方向侧上与传输电极（11）相邻的电位壁。结果，当对与其相邻的转印电极施加电压时，信号电荷被完全转印。

8. 发明申请

US20150288357A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150288357A1
公开(公告)日：2015-10-08
申请号：US14436767
申请日：2012-12-21
申请人： Satoshi HIROSE
发明人： Satoshi Hirose
IPC分类号： H03K17/567 , H01L23/528 , H01L29/423
CPC分类号： H03K17/567 , H01L23/528 , H01L29/4232 , H01L2224/48091 , H01L2224/49175 , H01L2924/00014
摘要： Two or more pads and are connected to a gate region, so that a pad for applying a gate voltage can be selected. In the case where, for example, the peripheral region is likely to overheat, a turn-on voltage is applied to the first pad to turn on the peripheral region later than the central region, and a turn-off voltage is applied to the second pad to turn off the peripheral region earlier than the central region. The problem that the peripheral region is likely to overheat can be addressed. In the case where the flow of an excess current raises the temperature, the turn-off voltage is applied to the second pad. The problem that the temperature is likely to rise in the peripheral region when an excess current flows can be addressed.
摘要翻译：两个或更多个焊盘并连接到栅极区域，从而可以选择用于施加栅极电压的焊盘。在例如周边区域容易过热的情况下，向第一焊盘施加接通电压，使得比中心区域晚的周边区域导通，对第二焊盘施加关断电压垫以比中央区域更早地关闭外围区域。可以解决周边地区可能过热的问题。在过电流的流动升高温度的情况下，关闭电压被施加到第二焊盘。可以解决当过剩电流流动时周边区域温度可能上升的问题。

9. 发明授权

US08783721B2 Metallic hollow columnar member 有权
标题翻译：金属中空柱状构件
公开(公告)号：US08783721B2
公开(公告)日：2014-07-22
申请号：US14008269
申请日：2012-03-30
申请人： Satoshi Hirose , Takashi Ariga , Shigeru Yonemura
发明人： Satoshi Hirose , Takashi Ariga , Shigeru Yonemura
IPC分类号： B62D21/15
CPC分类号： B62D21/15
摘要： A metallic hollow columnar member with a polygonal cross-section having at least five vertices and sides extending between the vertices, is disclosed. The polygonal cross-section is divided by two vertices (A, B) with small inside angles into two perimeter segments with a perimeter comprising one or more sides, and at least one of the two perimeter segments contains at least four sides. The respective inside angles of at least three vertices (V(i)) included in the perimeter segment which includes the at least four sides are equal to or less than 180°, the distance (SS(i)) between each of the at least three vertices (V(i)) and a straight line (L) connecting the two vertices (A, B) is shorter than ½ of the distance between the two vertices (A, B), and the inside angle of the vertex (C) with the smallest inside angle among the at least three vertices (V(i)) is larger than the inside angles of the two vertices (A, B). Vertices (VI) are present on the perimeter segment including the at least four sides, respectively between the vertex (C) with the smallest inside angle among the at least three vertices (V(i)) and one (A) of the two vertices (A, B), and between the vertex (C) with the smallest inside angle and the other (B) of the two vertices (A, B), said vertices (VI) having inside angles larger than the inside angle of the vertex (C) with the smallest inside angle.
摘要翻译：公开了具有至少五个顶点和在顶点之间延伸的侧面的具有多边形横截面的金属中空柱状构件。多边形横截面被具有小内角的两个顶点（A，B）分成两个周边段，周边包括一个或多个边，并且两个周边段中的至少一个包含至少四个边。包括至少四个边的周边段中包括的至少三个顶点（V（i））的相应内角度等于或小于180°，至少在每一个之间的距离（SS（i））连接两个顶点（A，B）的三个顶点（V（i））和直线（L）短于两个顶点（A，B）之间的距离的一半，顶点的内角）在所述至少三个顶点（V（i））中具有最小内角的大于所述两个顶点（A，B）的内角度。顶点（VI）分别位于包括至少四个侧面的周边区段上，分别位于至少三个顶点（V（i））中的最小内角的顶点（C）和两个顶点中的一个（A）之间（A，B），并且具有最小内角的顶点（C）和两个顶点（A，B）的顶点（C）之间，所述顶点（VI）的内角大于顶点的内角（C）内角最小。

10. 发明授权

US08415825B2 Power conversion device, method of controlling power conversion device, and vehicle with the same mounted thereon 有权
标题翻译：电力转换装置，电力转换装置的控制方法以及安装在其上的车辆
公开(公告)号：US08415825B2
公开(公告)日：2013-04-09
申请号：US13266694
申请日：2009-05-15
申请人： Satoshi Hirose
发明人： Satoshi Hirose
IPC分类号： B60L1/00
CPC分类号： B60L3/04 , B60K6/445 , B60K28/14 , B60L3/0007 , B60L7/14 , B60L11/123 , B60L11/14 , B60L2210/10 , B60L2210/40 , H02M3/1582 , H02M2001/0029 , H02M2001/322 , Y02T10/6217 , Y02T10/6239 , Y02T10/7022 , Y02T10/7077 , Y02T10/7216 , Y02T10/7241
摘要： In a power conversion device of a vehicle, when a collision of a vehicle is detected, the voltage of a gate signal that drive a semiconductor switching element included in the power conversion device is decreased, and residual charge stored in a smoothing capacitor is discharged. Such a configuration increases switching loss when the semiconductor switching element is turned on or off during discharge of the residual charge in the power conversion device, so that discharge of the residual charge can be accomplished in a shorter time.
摘要翻译：在车辆的电力变换装置中，当检测到车辆的碰撞时，驱动电力转换装置中包含的半导体开关元件的门信号的电压降低，并且放出平滑电容器中存储的残留电荷。当在电力转换装置中的剩余电荷放电期间半导体开关元件接通或断开时，这种配置增加了开关损耗，从而可以在更短的时间内完成剩余电荷的放电。

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