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1. 发明授权

US5040038A Solid-state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US5040038A
公开(公告)日：1991-08-13
申请号：US262056
申请日：1988-10-24
申请人： Naoki Yutani , Sotoju Asai , Shiro Hine , Satoshi Hirose , Hidekazu Yamamoto , Masashi Ueno
发明人： Naoki Yutani , Sotoju Asai , Shiro Hine , Satoshi Hirose , Hidekazu Yamamoto , Masashi Ueno
IPC分类号： H01L27/148 , H04N5/335 , H04N5/365 , H04N5/372
CPC分类号： H01L27/14831
摘要： A solid-state image sensor comprises photoelectric converting devices (22) formed on a p type semiconductor substrate (1), transfer gates (26) for reading signal charges therefrom, scanning lines (21) for selecting the transfer gates (26), and transfer electrodes (11) of the first layer and transfer electrodes (12) of the second layer alternately disposed for transferring in the vertical direction the read signal charges. All the electrodes of the transfer gates (26) are formed integrally with the transfer electrodes (12) of the second layer, with the result that all the electrodes of the transfer gates (26) are common to the transfer electrodes of the same layer (the second layer). Although the potential wall (340) is formed in the transfer channel (3) beneath the transfer electrode (12) connected to the transfer gate (26), the same is insulated from adjacent the transfer electrode (11) on the charge transfer direction side. As a result, when a voltage is applied to the transfer electrode adjacent thereto, the signal charges are fully transferred.
摘要翻译：固态图像传感器包括形成在p型半导体衬底（1）上的光电转换器件（22），用于读取信号电荷的传输门（26），用于选择传输门（26）的扫描线（21）交替地设置第一层的电极（11）和第二层的传输电极（12），用于在垂直方向上传送读取信号电荷。传输栅极（26）的所有电极与第二层的传输电极（12）整体形成，结果是传输栅极（26）的所有电极对同一层的传输电极是共同的（第二层）。尽管在连接到传输栅极（26）的传输电极（12）下方的传输沟道（3）中形成了电位壁（340），但是在电荷转移方向侧上与传输电极（11）相邻的电位壁。结果，当对与其相邻的转印电极施加电压时，信号电荷被完全转印。

2. 发明授权

US4831426A Solid state image sensing device and a method of manufacturing the same 失效
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US4831426A
公开(公告)日：1989-05-16
申请号：US890518
申请日：1986-07-30
申请人： Masafumi Kimata , Masao Yamawaki , Sotoju Asai
发明人： Masafumi Kimata , Masao Yamawaki , Sotoju Asai
IPC分类号： H01L31/00 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/372 , H04N5/374
CPC分类号： H01L27/14887 , H01L27/14831
摘要： Diffusion self-aligned MOS transistors are applied to a solid state image sensing device so as to form in a self-alignment manner control regions (80) in which reading of signal charges from photosignal detecting regions (70) formed on a semiconductor (1) to charge transfer regions (30) is controlled.
摘要翻译：扩散自对准MOS晶体管被施加到固态图像感测装置，以便以自对准方式形成控制区域（80），其中从形成在半导体（1）上的光信号检测区域（70）读取信号电荷，对电荷转移区域（30）进行控制。

3. 发明授权

US4314874A Method for forming a fine pattern of an aluminum film 失效
标题翻译：形成铝膜精细图案的方法
公开(公告)号：US4314874A
公开(公告)日：1982-02-09
申请号：US190286
申请日：1980-09-24
申请人： Haruhiko Abe , Yoji Mashiko , Hiroshi Harada , Sotoju Asai , Kazuo Mizuguchi , Sumio Nomoto
发明人： Haruhiko Abe , Yoji Mashiko , Hiroshi Harada , Sotoju Asai , Kazuo Mizuguchi , Sumio Nomoto
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/316 , H01L21/3213 , H01L21/3215 , C23F1/02
CPC分类号： H01L21/31683 , C23F4/00 , H01L21/32136 , H01L21/3215
摘要： A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions serving as a mask to thereby prevent the removal of the underlying areas of the aluminum film.
摘要翻译：在基板2的顶表面上形成薄的铝膜3.铝膜的一些区域被氧离子束6照射以形成注入区域7.然后等离子体蚀刻该表面，并将氧离子注入作为掩模的区域，从而防止去除铝膜的下面的区域。

4. 发明授权

US4377734A Method for forming patterns by plasma etching 失效
标题翻译：通过等离子体蚀刻形成图案的方法
公开(公告)号：US4377734A
公开(公告)日：1983-03-22
申请号：US195380
申请日：1980-10-09
申请人： Yoji Mashiko , Hirozo Takano , Haruhiko Abe , Sotoju Asai , Kazuo Mizuguchi , Sumio Nomoto
发明人： Yoji Mashiko , Hirozo Takano , Haruhiko Abe , Sotoju Asai , Kazuo Mizuguchi , Sumio Nomoto
IPC分类号： H01L21/302 , H01L21/311 , H01L21/3115 , H01L21/3213 , H01L21/3215 , B23K9/00
CPC分类号： H01L21/3215 , H01L21/302 , H01L21/31116 , H01L21/31144 , H01L21/31155 , H01L21/32136 , H01L21/32137
摘要： Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with oxygen, whereby that layer which has been rendered passive acts as a mask, and an etched pattern is formed.
摘要翻译：在等离子体蚀刻的氧气存在下变为无源的金属的离子注入到工件的表面的选定部分中，之后用与氧混合的反应气体进行等离子体蚀刻，由此将该层已被赋予被动作为掩模，并且形成蚀刻图案。

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