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    • 1. 发明授权
    • Method for manufacturing magnetoresistance element
    • 制造磁阻元件的方法
    • US06482329B1
    • 2002-11-19
    • US09381822
    • 2000-12-18
    • Migaku TakahashiSatoshi MiuraMasakiyo Tsunoda
    • Migaku TakahashiSatoshi MiuraMasakiyo Tsunoda
    • H01F4118
    • B82Y25/00B82Y40/00H01F41/18H01F41/308H01L43/12
    • A method of manufacturing a magnetoresistance element which can reproduce magnetic signals with higher sensitivity. The manufacturing method includes the steps of providing a vacuum below 10−9 Torr in a film forming chamber for forming a nonmagnetic layer and ferromagnetic layer; performing plasma-etching of the surface of a substrate body by using a mixture of a gas (a) containing at least oxygen or water introduced into the chamber and an Ar gas (b) introduced into the chamber in a vacuum, state controlled to higher than 10−9 Torr; and forming the nonmagnetic and ferromagnetic layers on the etched substrate body by sputtering a prescribed target by using the mixture of the gases (a) and (b).
    • 一种制造可以以更高灵敏度再现磁信号的磁阻元件的方法。 该制造方法包括以下步骤:在用于形成非磁性层和铁磁层的成膜室中提供10 -9乇以下的真空; 通过使用至少含有氧气或引入室中的水的气体(a)和在真空中引入室中的Ar气体(b)进行等离子体蚀刻,从而对基体的表面进行等离子体蚀刻,状态被控制到更高 超过10-9乇; 以及通过使用气体(a)和(b)的混合物溅射规定的靶材,在蚀刻的基板主体上形成非磁性和铁磁性层。