专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07867674B2 Substrate-processing apparatus, substrate-processing method, substrate-processing program, and computer-readable recording medium recorded with such program 有权
标题翻译：基板处理装置，基板处理方法，基板处理程序和记录有该程序的计算机可读记录介质
公开(公告)号：US07867674B2
公开(公告)日：2011-01-11
申请号：US12065829
申请日：2006-09-13
申请人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
发明人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
IPC分类号： G03C5/00 , G03F1/00 , H01L21/00
CPC分类号： G03F7/40 , G03F7/38
摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.
摘要翻译：图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。

2. 发明申请

US20090104548A1 SUBSTRATE-PROCESSING APPARATUS, SUBSTRATE-PROCESSING METHOD, SUBSTRATE-PROCESSING PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM RECORDED WITH SUCH PROGRAM 有权
标题翻译：基板处理设备，基板处理方法，基板处理程序以及使用此程序记录的计算机可读记录介质
公开(公告)号：US20090104548A1
公开(公告)日：2009-04-23
申请号：US12065829
申请日：2006-09-13
申请人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
发明人： Michio Tanaka , Shinichi Shinozuka , Masahide Tadokoro , Kunie Ogata , Hiroshi Tomita , Ryoichi Uemura
IPC分类号： G03F7/20 , G03B27/52
CPC分类号： G03F7/40 , G03F7/38
摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.
摘要翻译：图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。

3. 发明申请

US20090162759A1 SUBSTRATE-PROCESSING APPARATUS, SUBSTRATE-PROCESSING METHOD, SUBSTRATE-PROCESSING PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM RECORDED WITH SUCH PROGRAM 有权
标题翻译：基板处理设备，基板处理方法，基板处理程序以及使用此程序记录的计算机可读记录介质
公开(公告)号：US20090162759A1
公开(公告)日：2009-06-25
申请号：US12065782
申请日：2006-09-13
申请人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
发明人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
IPC分类号： G03C5/00
CPC分类号： H01L21/67225 , G03F7/168 , G03F7/3071 , G03F7/40 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A pattern forming system 1 includes a checking apparatus 400, a storage device 502, and a control section 500. The checking apparatus 400 is configured to measure and check a state of a resist pattern formed on a substrate W after a developing process and output a first check result thus obtained, and to measure and check a state of a pattern formed on the substrate after an etching process and output a second check result thus obtained. The storage device 502 stores a correlation formula obtained from the first check result and the second check result. The control section 500 is configured to use the correlation formula to obtain a target value of the state of the pattern after the developing process from a target value of the state of the pattern after the etching process, and to use a difference between the target value of the state of the pattern after the developing process and the first check result to set a condition for the first heat process and/or the second heat process.
摘要翻译：图案形成系统1包括检查装置400，存储装置502和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的状态，并输出第一检查结果，并且在蚀刻处理之后测量和检查在基板上形成的图案的状态，并输出由此获得的第二检查结果。存储装置502存储从第一检查结果和第二检查结果获得的相关公式。控制部500被配置为使用相关公式从蚀刻处理之后的图案的状态的目标值获得显影处理之后的图案的状态的目标值，并且使用目标值的显影过程之后的图案状态和第一检查结果来设定第一加热处理和/或第二加热处理的条件。

4. 发明授权

US07867673B2 Substrate-processing apparatus, substrate-processing method, substrate-processing program, and computer-readable recording medium recorded with such program 有权
标题翻译：基板处理装置，基板处理方法，基板处理程序和记录有该程序的计算机可读记录介质
公开(公告)号：US07867673B2
公开(公告)日：2011-01-11
申请号：US12065782
申请日：2006-09-13
申请人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
发明人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
IPC分类号： G03C5/00 , G03F1/00 , H01L21/00
CPC分类号： H01L21/67225 , G03F7/168 , G03F7/3071 , G03F7/40 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A pattern forming system 1 includes a checking apparatus 400, a storage device 502, and a control section 500. The checking apparatus 400 is configured to measure and check a state of a resist pattern formed on a substrate W after a developing process and output a first check result thus obtained, and to measure and check a state of a pattern formed on the substrate after an etching process and output a second check result thus obtained. The storage device 502 stores a correlation formula obtained from the first check result and the second check result. The control section 500 is configured to use the correlation formula to obtain a target value of the state of the pattern after the developing process from a target value of the state of the pattern after the etching process, and to use a difference between the target value of the state of the pattern after the developing process and the first check result to set a condition for the first heat process and/or the second heat process.
摘要翻译：图案形成系统1包括检查装置400，存储装置502和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的状态，并输出第一检查结果，并且在蚀刻处理之后测量和检查在基板上形成的图案的状态，并输出由此获得的第二检查结果。存储装置502存储从第一检查结果和第二检查结果获得的相关公式。控制部500被配置为使用相关公式从蚀刻处理之后的图案的状态的目标值获得显影处理之后的图案的状态的目标值，并且使用目标值的显影过程之后的图案状态和第一检查结果来设定第一加热处理和/或第二加热处理的条件。

5. 发明授权

US07862966B2 Substrate-processing apparatus, substrate-processing method, substrate-processing program, and computer-readable recording medium recorded with such program 有权
标题翻译：基板处理装置，基板处理方法，基板处理程序和记录有该程序的计算机可读记录介质
公开(公告)号：US07862966B2
公开(公告)日：2011-01-04
申请号：US12065809
申请日：2006-09-13
申请人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
发明人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
IPC分类号： G03C5/00 , G03F1/00 , H01L21/00
CPC分类号： G03F7/40
摘要： A pattern forming system 1 is configured to execute a series of processes, which includes a first heat process for performing a heat process on a substrate W after a resist liquid coating process, a light exposure process for performing light exposure on a resist film in accordance with a predetermined pattern, a second heat process for promoting a chemical reaction in the resist film after the light exposure, a developing process for developing the resist film after the light exposure, and an etching process for etching an oxide film by use of a resist pattern formed by the developing process as a mask. The system includes a checking apparatus 400 configured to measure and check a state of a pattern formed after the etching process, and a control section 500 configured to use a check result to set a condition for the first heat process and/or the second heat process so as to cause the state of the pattern to be uniform on a surface of the substrate W after the etching process.
摘要翻译：图案形成系统1被配置为执行一系列处理，其包括在抗蚀剂液体涂覆处理之后在衬底W上执行热处理的第一热处理，用于在抗蚀剂膜上进行曝光的曝光工艺具有预定图案，用于促进曝光后的抗蚀剂膜中的化学反应的第二热处理，曝光后的抗蚀剂膜显影的显影处理以及通过使用抗蚀剂蚀刻氧化膜的蚀刻工艺由显影过程形成的图案作为掩模。该系统包括：检查装置400，被配置为测量和检查在蚀刻处理之后形成的图案的状态;以及控制部分500，被配置为使用检查结果来设置用于第一加热处理和/或第二加热处理的条件从而在蚀刻处理之后使图案的状态在基板W的表面上均匀。

6. 发明申请

US20090047586A1 SUBSTRATE-PROCESSING APPARATUS, SUBSTRATE-PROCESSING METHOD, SUBSTRATE-PROCESSING PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM RECORDED WITH SUCH PROGRAM 有权
标题翻译：基板处理设备，基板处理方法，基板处理程序以及使用此程序记录的计算机可读记录介质
公开(公告)号：US20090047586A1
公开(公告)日：2009-02-19
申请号：US12065809
申请日：2006-09-13
申请人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
发明人： Kunie Ogata , Hiroshi Tomita , Michio Tanaka , Ryoichi Uemura
IPC分类号： G03F7/20 , G03B27/32
CPC分类号： G03F7/40
摘要： A pattern forming system 1 is configured to execute a series of processes, which includes a first heat process for performing a heat process on a substrate W after a resist liquid coating process, a light exposure process for performing light exposure on a resist film in accordance with a predetermined pattern, a second heat process for promoting a chemical reaction in the resist film after the light exposure, a developing process for developing the resist film after the light exposure, and an etching process for etching an oxide film by use of a resist pattern formed by the developing process as a mask. The system includes a checking apparatus 400 configured to measure and check a state of a pattern formed after the etching process, and a control section 500 configured to use a check result to set a condition for the first heat process and/or the second heat process so as to cause the state of the pattern to be uniform on a surface of the substrate W after the etching process.
摘要翻译：图案形成系统1被配置为执行一系列处理，其包括在抗蚀剂液体涂覆处理之后在衬底W上执行热处理的第一热处理，用于在抗蚀剂膜上进行曝光的曝光工艺具有预定图案，用于促进曝光后的抗蚀剂膜中的化学反应的第二热处理，曝光后的抗蚀剂膜显影的显影处理以及通过使用抗蚀剂蚀刻氧化膜的蚀刻工艺由显影过程形成的图案作为掩模。该系统包括：检查装置400，被配置为测量和检查在蚀刻处理之后形成的图案的状态;以及控制部分500，被配置为使用检查结果来设置用于第一加热处理和/或第二加热处理的条件从而在蚀刻处理之后使图案的状态在基板W的表面上均匀。

7. 发明申请

US20100047702A1 RESIST PATTERN FORMING METHOD 有权
标题翻译：电阻图案形成方法
公开(公告)号：US20100047702A1
公开(公告)日：2010-02-25
申请号：US12610907
申请日：2009-11-02
申请人： Kunie OGATA , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie OGATA , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03F7/20 , G03B27/32
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

8. 发明授权

US06984477B2 Resist pattern forming apparatus and method thereof 失效
标题翻译：抗蚀剂图案形成装置及其方法
公开(公告)号：US06984477B2
公开(公告)日：2006-01-10
申请号：US09963527
申请日：2001-09-27
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03F9/00 , G03F7/20 , G03F7/30 , G03F7/40 , B05D3/12
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and an appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

9. 发明授权

US08231285B2 Substrate processing method and apparatus 有权
标题翻译：基板加工方法及装置
公开(公告)号：US08231285B2
公开(公告)日：2012-07-31
申请号：US12610907
申请日：2009-11-02
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B27/53
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

10. 发明授权

US07780366B2 Resist pattern forming method 有权
标题翻译：抗蚀图案形成方法
公开(公告)号：US07780366B2
公开(公告)日：2010-08-24
申请号：US11831622
申请日：2007-07-31
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B27/32
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式