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1. 发明授权

US08231285B2 Substrate processing method and apparatus 有权
标题翻译：基板加工方法及装置
公开(公告)号：US08231285B2
公开(公告)日：2012-07-31
申请号：US12610907
申请日：2009-11-02
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B27/53
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

2. 发明授权

US07780366B2 Resist pattern forming method 有权
标题翻译：抗蚀图案形成方法
公开(公告)号：US07780366B2
公开(公告)日：2010-08-24
申请号：US11831622
申请日：2007-07-31
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B27/32
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

3. 发明申请

US20080182211A1 RESIST PATTERN FORMING METHOD 有权
标题翻译：电阻图案形成方法
公开(公告)号：US20080182211A1
公开(公告)日：2008-07-31
申请号：US11831622
申请日：2007-07-31
申请人： Kunie OGATA , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura
发明人： Kunie OGATA , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura
IPC分类号： G03B27/32 , G03F7/26
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

4. 发明授权

US06281962B1 Processing apparatus for coating substrate with resist and developing exposed resist including inspection equipment for inspecting substrate and processing method thereof 有权
标题翻译：用抗蚀剂涂布基材的处理装置和显影曝光抗蚀剂，包括用于检查基板的检查设备及其加工方法
公开(公告)号：US06281962B1
公开(公告)日：2001-08-28
申请号：US09465681
申请日：1999-12-17
申请人： Kunie Ogata , Koki Nishimuko
发明人： Kunie Ogata , Koki Nishimuko
IPC分类号： G03B2732
CPC分类号： H01L21/67178 , G03F7/7065 , G03F7/7075 , H01L21/6715 , H01L21/67271
摘要： Inspection equipment for detecting defects in a wafer is provided in a coating and developing system including a plurality of kinds of processing units for performing processing necessary for coating a wafer with a resist and processing necessary for developing the resist on the wafer. The transfer of the wafer between the processing units and the inspection equipment is performed by means of a main transfer device. The inspection equipment sends an inspection result as a detection signal to a controller, and the controller which receives the detection signal controls exposure conditions for an aligner according to the presence or absence of defects and adjusts a frequency regulating mechanism to control inspection frequency. The wafer is transferred between the processing units and the inspection equipment by the main transfer device, whereby the wafer is not artificially contaminated.
摘要翻译：用于检测晶片缺陷的检查设备设置在涂覆和显影系统中，该涂覆和显影系统包括用于进行用抗蚀剂涂覆晶片所需的处理的多种处理单元和在晶片上显影抗蚀剂所需的处理。在处理单元和检查设备之间的晶片传送通过主传送装置进行。检查设备将检测结果作为检测信号发送给控制器，接收检测信号的控制器根据有无缺陷来控制对准器的曝光条件，并调整频率调节机构以控制检查频率。晶片通过主转印装置在处理单元和检查设备之间转移，由此晶片不被人为地污染。

5. 发明申请

US20100047702A1 RESIST PATTERN FORMING METHOD 有权
标题翻译：电阻图案形成方法
公开(公告)号：US20100047702A1
公开(公告)日：2010-02-25
申请号：US12610907
申请日：2009-11-02
申请人： Kunie OGATA , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie OGATA , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03F7/20 , G03B27/32
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

6. 发明授权

US06984477B2 Resist pattern forming apparatus and method thereof 失效
标题翻译：抗蚀剂图案形成装置及其方法
公开(公告)号：US06984477B2
公开(公告)日：2006-01-10
申请号：US09963527
申请日：2001-09-27
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03F9/00 , G03F7/20 , G03F7/30 , G03F7/40 , B05D3/12
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and an appropriate amendment can be performed.
摘要翻译：使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。这导致操作者的工作量减少，并且可以执行适当的修改。

7. 发明授权

US07648292B2 Resist pattern forming method 有权
公开(公告)号：US07648292B2
公开(公告)日：2010-01-19
申请号：US11831622
申请日：2007-07-31
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B27/32
摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

8. 发明授权

US07488127B2 Resist pattern forming apparatus and method thereof 有权
公开(公告)号：US07488127B2
公开(公告)日：2009-02-10
申请号：US11199215
申请日：2005-08-09
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03D5/00 , G03B13/00 , G03B27/32
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.

9. 发明申请

US20050271382A1 Resist pattern forming apparatus and method thereof 有权
标题翻译：抗蚀剂图案形成装置及其方法
公开(公告)号：US20050271382A1
公开(公告)日：2005-12-08
申请号：US11199215
申请日：2005-08-09
申请人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
发明人： Kunie Ogata , Koki Nishimuko , Hiroshi Tomita , Yoshio Kimura , Ryouichi Uemura , Michio Tanaka
IPC分类号： G03F7/16 , B05C11/00 , B05C11/08 , B05D1/40 , B05D3/00 , G03F7/20 , G03F7/30 , H01L21/00 , H01L21/027 , G03C5/00
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.
摘要翻译：一种抗蚀剂图形形成装置，包括具有控制部分的控制器，所述控制部分控制具有涂覆单元和显影单元的涂布和显影装置的处理，并且与其连接的对准器，同时检查部分等至少测量选自多个测量项目中的一个，基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，底膜与抗蚀剂图案匹配的精度，显影后的缺陷，等等。测量的数据被传送到控制器。控制器根据抗蚀剂的膜厚度和开发后的线宽度等测量项目的对应数据选择修改参数，修改后的参数修改为执行。因此，通过减少操作者的工作量来促进修改操作，并且同时可以执行适当的修改。

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