会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Resist pattern forming method
    • 抗蚀图案形成方法
    • US07780366B2
    • 2010-08-24
    • US11831622
    • 2007-07-31
    • Kunie OgataKoki NishimukoHiroshi TomitaYoshio KimuraRyouichi UemuraMichio Tanaka
    • Kunie OgataKoki NishimukoHiroshi TomitaYoshio KimuraRyouichi UemuraMichio Tanaka
    • G03D5/00G03B27/32
    • H01L21/67253G03F7/162G03F7/3021H01L21/6715
    • A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
    • 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜,然后检查至少一个 选自以下的多个测量项目:基膜和抗蚀剂膜的反射率和膜厚度,显影后的线宽度,基底图案与抗蚀剂图案匹配的精度,显影后的表面上的缺陷等。 基于每个测量项目的对应数据(例如抗蚀剂的膜厚度和显影后的线宽度)来选择修改参数,并且修改参数。 这导致操作者的工作量减少,并且可以执行适当的修改。
    • 3. 发明申请
    • RESIST PATTERN FORMING METHOD
    • 电阻图案形成方法
    • US20080182211A1
    • 2008-07-31
    • US11831622
    • 2007-07-31
    • Kunie OGATAKoki NishimukoHiroshi TomitaYoshio Kimura
    • Kunie OGATAKoki NishimukoHiroshi TomitaYoshio Kimura
    • G03B27/32G03F7/26
    • H01L21/67253G03F7/162G03F7/3021H01L21/6715
    • A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
    • 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜,然后检查至少一个 选自以下的多个测量项目:基膜和抗蚀剂膜的反射率和膜厚度,显影后的线宽度,基底图案与抗蚀剂图案匹配的精度,显影后的表面上的缺陷等。 基于每个测量项目的对应数据(例如抗蚀剂的膜厚度和显影后的线宽度)来选择修改参数,并且修改参数。 这导致操作者的工作量减少,并且可以执行适当的修改。