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1. 发明授权

US07128976B2 Composition for film formation, method of film formation, and silica-based film 有权
公开(公告)号：US07128976B2
公开(公告)日：2006-10-31
申请号：US10269967
申请日：2002-10-15
申请人： Eiji Hayashi , Kouichi Hasegawa , Youngsoo Seo , Michinori Nishikawa , Kinji Yamada
发明人： Eiji Hayashi , Kouichi Hasegawa , Youngsoo Seo , Michinori Nishikawa , Kinji Yamada
IPC分类号： B32B25/20
CPC分类号： H01L21/02126 , C08G77/08 , C08G77/50 , C09D183/04 , C09D183/14 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/31663
摘要： A composition for film formation which comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of compounds represented by the formula (1), compounds represented by the formula (2), and compounds represented by the formula (3) in the presence of water and an ammonium compound, and (B) an organic solvent.

2. 发明授权

US06503633B2 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film 有权
标题翻译：用于成膜的组合物，用于制备成膜用组合物的方法，成膜方法和二氧化硅基膜
公开(公告)号：US06503633B2
公开(公告)日：2003-01-07
申请号：US09860914
申请日：2001-05-21
申请人： Michinori Nishikawa , Kouichi Hasegawa , Eiji Hayashi , Kinji Yamada
发明人： Michinori Nishikawa , Kouichi Hasegawa , Eiji Hayashi , Kinji Yamada
IPC分类号： C08G7716
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/316 , Y10T428/31663
摘要： A composition for film formation which, when used in the production of semiconductor devices and the like, can give interlayer insulating films which differ little in dielectric constant even when obtained through curing under different conditions and have excellent adhesion to substrates, a process for producing the composition, and a silica-based film obtained from the composition. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing (A-1) at least one compound selected from the group consisting of compounds represented by the following formula (1), compounds represented by the following formula (2), and compounds represented by the following formula (3), and (A-2) at least one compound represented by the following formula (4), in the presence of a catalyst and water; and (B) an organic solvent.
摘要翻译：一种成膜用组合物，当用于半导体装置等的制造中时，即使在不同条件下固化而获得的介电常数几乎不相等且对基材的附着性优异，也可以制造出组合物和由该组合物获得的二氧化硅基膜。用于成膜的组合物包括：（A）通过水解和缩合获得的水解和缩合产物（A-1）至少一种选自由下式（1）表示的化合物的化合物，由下述式（2）表示的化合物和下述式（3）所示的化合物和（A-2）至少一种下述式（4）所示的化合物在催化剂和水的存在下反应; 和（B）有机溶剂。

3. 发明授权

US06787193B2 Method for the formation of silica film, silica film, insulating film, and semiconductor device 失效
标题翻译：形成二氧化硅膜，二氧化硅膜，绝缘膜和半导体器件的方法
公开(公告)号：US06787193B2
公开(公告)日：2004-09-07
申请号：US10165324
申请日：2002-06-10
申请人： Eiji Hayashi , Atsushi Shiota , Michinori Nishikawa , Kinji Yamada
发明人： Eiji Hayashi , Atsushi Shiota , Michinori Nishikawa , Kinji Yamada
IPC分类号： B32B1800
CPC分类号： H01L21/02126 , C09D183/04 , H01L21/02216 , H01L21/02282 , H01L21/02343 , H01L21/31133 , H01L21/31138 , H01L21/3122 , H01L21/31695 , Y02P20/544 , Y10T428/31663
摘要： A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500° C. and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.
摘要翻译：一种形成二氧化硅膜的方法，其包括在超临界介质中处理膜，所述膜包含（A）硅氧烷化合物和（B）选自（B-1）中的至少一种，与具有或分散在成分（A）中，沸点或分解温度为150-500℃，和（B-2）表面活性剂。该二氧化硅膜的机械强度优异，介电常数为2.2以下，因此可用作半导体装置等的电介质膜。

4. 发明授权

US06472079B2 Composition for film formation, method of film formation, and silica-based film 有权
标题翻译：用于成膜的成分，成膜方法和二氧化硅基膜
公开(公告)号：US06472079B2
公开(公告)日：2002-10-29
申请号：US09829954
申请日：2001-04-11
申请人： Eiji Hayashi , Michinori Nishikawa , Kinji Yamada
发明人： Eiji Hayashi , Michinori Nishikawa , Kinji Yamada
IPC分类号： B32B9041
CPC分类号： H01L21/02126 , C08G77/06 , C08G77/08 , C08G77/50 , C09D183/04 , C09D183/14 , H01L21/02282 , H01L21/312 , Y10T428/31663
摘要： A composition for film formation which comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the following formula (1) RaSi(OR1)4-a (1) (A-2) compounds represented by the following formula (2) Si(OR2)4 (2) and (A-3) compounds represented by the following formula (3) R3b(R4O)3-bSi—(R7)d—Si(OR5)3-cR6c (3) (B) at least one member selected from the group consisting of compounds of the metals in Groups IA and IIA of the periodic table; and (C) an organic solvent. A method for film formation using the composition and a silica-based film obtained by the method are also disclosed.
摘要翻译：一种成膜用组合物，其特征在于，含有：（A）水解缩合产物，其通过水解和缩合选自（A-1）由下式（1）表示的化合物（A-2））由下式（2）和（A-3）表示的化合物，由下式（3）（B）表示的化合物中的至少一种选自由周期表中第IA和IIA族中的金属的化合物组成的组中的至少一种表; 和（C）有机溶剂。还公开了使用该组合物和通过该方法获得的二氧化硅基膜的成膜方法。

5. 发明授权

US06800330B2 Composition for film formation, method of film formation, and silica-based film 失效
标题翻译：用于成膜的成分，成膜方法和二氧化硅基膜
公开(公告)号：US06800330B2
公开(公告)日：2004-10-05
申请号：US10103996
申请日：2002-03-25
申请人： Eiji Hayashi , Michinori Nishikawa , Atsushi Shiota , Kinji Yamada
发明人： Eiji Hayashi , Michinori Nishikawa , Atsushi Shiota , Kinji Yamada
IPC分类号： B05D512
CPC分类号： H01L21/02126 , C09D183/04 , C09D183/14 , H01L21/02216 , H01L21/02282 , H01L21/3122
摘要： A composition for film formation capable of forming a silica-based coating film having low water absorption and dielectric constant of 2.1 or lower and useful as an interlayer insulating film material in semiconductor devices, etc. The composition contains: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of compounds represented by formula (1), compounds represented by formula (2), and compounds represented by formula (3) in the presence of a basic catalyst and water, RaSi(OR1)4−a (1) wherein R represents a hydrogen atom, a fluorine atom, or a monovalent organic group, R1 represents a monovalent organic group, and a is an integer of 1 or 2, Si(OR2)4 (2) wherein R2 represents a monovalent organic group, R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c (3) wherein R3 to R6 may be the same or different and each represents a monovalent organic group, b and c may be the same or different and each is a number of 0 to 2, R7 represents an oxygen atom, a phenylene group, or a group represented by —(CH2)n—, wherein n is an integer of 1 to 6, and d is 0 or 1; (B) a compound compatible with or dispersible in ingredient (A) and having a boiling point or decomposition temperature of from 250 to 450° C.; and (C) an organic solvent.
摘要翻译：用于形成能够形成低吸水性和介电常数为2.1以下并且用作半导体装置中的层间绝缘膜材料的二氧化硅系涂膜的成膜用组合物等。该组合物含有：（A）水解产物和通过水解和缩合在式（1）表示的化合物，式（2）表示的化合物和式（3）表示的化合物中的至少一种硅烷化合物在碱性催化剂存在下水解和缩合得到的缩合物，和水，其中R表示氢原子，氟原子或一价有机基团，R 1表示一价有机基团，a为1或2的整数，其中R 2表示一价有机基团，其中R 3至R 6可以相同或不同，并且各自表示一价有机基团，b和c可以相同或不同，并且各自为0至2的数，R 7表示氧原子，亚苯基，或由 - （CH 2）n - 表示的基团，其中n为1至6的整数，d为0或1; （B）与成分（A）相容或分散且沸点或分解温度为250-450℃的化合物; 和（C）有机溶剂。

6. 发明授权

US06749944B2 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor 失效
标题翻译：叠层膜，层叠膜的形成方法，绝缘膜和半导体用基板
公开(公告)号：US06749944B2
公开(公告)日：2004-06-15
申请号：US10252606
申请日：2002-09-24
申请人： Michinori Nishikawa , Manabu Sekiguchi , Atsushi Shiota , Kinji Yamada
发明人： Michinori Nishikawa , Manabu Sekiguchi , Atsushi Shiota , Kinji Yamada
IPC分类号： B32B904
CPC分类号： B05D1/60 , B05D7/52 , C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/0214 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02282 , H01L21/3122 , Y10T428/24942 , Y10T428/31663
摘要： A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.
摘要翻译：叠层膜，制造层叠膜的方法，包括层叠膜的绝缘膜和使用绝缘膜的半导体用基板。叠层膜包含两个或更多种平均回转半径的差异为5nm以上的烷氧基硅烷水解缩合物的膜或介电常数为0.3以上的烷氧基硅烷水解缩合物的膜。通过涂布包含（B）平均回转半径为10nm以下的化合物的涂布溶液，然后涂布包含（A）平均半径为10的化合物的涂布溶液， 30nm，然后加热。叠层膜提供对CVD膜具有优异粘合性的电介质膜（半导体用基板）。

7. 发明授权

US06465368B2 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film 有权
标题翻译：绝缘膜形成材料的制造方法，绝缘膜形成材料和绝缘膜
公开(公告)号：US06465368B2
公开(公告)日：2002-10-15
申请号：US09849302
申请日：2001-05-07
申请人： Yasutake Inoue , Junji Kawai , Michinori Nishikawa , Kinji Yamada
发明人： Yasutake Inoue , Junji Kawai , Michinori Nishikawa , Kinji Yamada
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/316 , Y10T428/1457
摘要： A method of manufacturing an insulating film-forming material comprising dissolving an inorganic polymer compound or an organic polymer compound in an organic solvent having a solubility in water of 100 g/100 cc or less at 20° C., and causing the solution to come in contact with water or an acidic aqueous solution to perform liquid-liquid extraction. The insulating film-forming material has a low metal impurity content and is capable of forming a silica-based film having excellent relative dielectric constant characteristics and low leakage current characteristics.
摘要翻译：一种绝缘膜形成材料的制造方法，其特征在于，将无机高分子化合物或有机高分子化合物溶解在20℃下在水中的溶解度为100g / 100cc以下的有机溶剂中，使溶液达到与水或酸性水溶液接触以进行液 - 液萃取。绝缘膜形成材料具有低的金属杂质含量，并且能够形成具有优异的相对介电常数特性和低泄漏电流特性的二氧化硅基膜。

8. 发明申请

US20050003218A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing 有权
标题翻译：化学机械抛光止动膜，其制造方法和化学机械抛光方法
公开(公告)号：US20050003218A1
公开(公告)日：2005-01-06
申请号：US10902008
申请日：2004-07-30
申请人： Michinori Nishikawa , Takashi Okada , Kinji Yamada
发明人： Michinori Nishikawa , Takashi Okada , Kinji Yamada
IPC分类号： H01L21/304 , B24B37/04 , C08L71/00 , C09D171/00 , H01L21/321 , H01L21/768 , B32B15/08
CPC分类号： B24B37/005 , B24B37/015 , B24B37/042 , C08L71/00 , C09D171/00 , H01L21/3212 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/7684 , Y10T428/31692
摘要： A chemical mechanical polishing stopper film comprising at least one organic polymer, said film having a dielectric constant of 4 or lower, and a chemical mechanical polishing method. The chemical mechanical polishing method comprises forming a chemical mechanical polishing stopper film comprising at least one organic polymer on an insulating film so that the stopper film is interposed between the insulating film and a metal film to be removed by chemical mechanical polishing, and then removing the metal film with a chemical mechanical polishing slurry.
摘要翻译：一种化学机械抛光阻挡膜，其包含至少一种有机聚合物，所述膜的介电常数为4或更低，以及化学机械抛光方法。化学机械抛光方法包括在绝缘膜上形成包含至少一种有机聚合物的化学机械抛光阻挡膜，使得阻挡膜介于通过化学机械抛光除去的绝缘膜和金属膜之间，然后除去金属薄膜与化学机械抛光浆料。

9. 发明授权

US06576393B1 Composition for resist underlayer film and method for producing the same 有权
标题翻译：抗蚀剂下层膜用组合物及其制造方法
公开(公告)号：US06576393B1
公开(公告)日：2003-06-10
申请号：US09545453
申请日：2000-04-07
申请人： Hikaru Sugita , Akio Saito , Kinji Yamada , Michinori Nishikawa , Yoshihisa Ohta , Yoshiji Yuumoto
发明人： Hikaru Sugita , Akio Saito , Kinji Yamada , Michinori Nishikawa , Yoshihisa Ohta , Yoshiji Yuumoto
IPC分类号： G03C173
CPC分类号： G03F7/0751 , G03F7/09 , Y10S430/106 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/124 , Y10S430/126
摘要： Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R1aSi(OR2)4−a (1) wherein R1 represents a hydrogen atom, a fluorine atom or a univalent organic group, R2 represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c (2) wherein R3, R4, R5 and R6, which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R7 represents an oxygen atom or —(CH2)n—, d represents 0 or 1, and n represents an integer of 1 to 6; and (B) a compound generating an acid by ultraviolet irradiation and/or heating.
摘要翻译：公开了抗蚀剂图案的再现性优异的抗蚀剂下层膜的组合物，对抗蚀剂的附着性优异，对抗蚀剂曝光后使用的显影液的耐受性优异，抗蚀剂的氧气灰化的膜损失降低; 及其制备方法，该组合物包含：（A）至少一种选自（A-1）由下列通式（1）表示的化合物的化合物的水解产物和缩合物：）：其中R1表示氢原子，氟原子或一价有机基团，R2表示一价有机基团，a表示0〜2的整数，（A-2）由以下通式（ 2）：其中可以相同或不同的R 3，R 4，R 5和R 6各自表示一价有机基团，b和c可以相同或不同，各自表示0-2的整数，R7表示氧原子或 - （CH 2）n - ，d表示0或1，n表示1〜6的整数。和（B）通过紫外线照射和/或加热产生酸的化合物。

10. 发明授权

US07153767B2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing 有权
公开(公告)号：US07153767B2
公开(公告)日：2006-12-26
申请号：US10902008
申请日：2004-07-30
申请人： Michinori Nishikawa , Takashi Okada , Kinji Yamada
发明人： Michinori Nishikawa , Takashi Okada , Kinji Yamada
IPC分类号： H01L21/302
CPC分类号： B24B37/005 , B24B37/015 , B24B37/042 , C08L71/00 , C09D171/00 , H01L21/3212 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/7684 , Y10T428/31692
摘要： A chemical mechanical polishing stopper film comprising at least one organic polymer, said film having a dielectric constant of 4 or lower, and a chemical mechanical polishing method. The chemical mechanical polishing method comprises forming a chemical mechanical polishing stopper film comprising at least one organic polymer on an insulating film so that the stopper film is interposed between the insulating film and a metal film to be removed by chemical mechanical polishing, and then removing the metal film with a chemical mechanical polishing slurry.

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