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1. 发明授权

US6100170A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6100170A
公开(公告)日：2000-08-08
申请号：US110942
申请日：1998-07-07
申请人： Michikazu Matsumoto , Tatsuo Sugiyama , Shinichi Ogawa , Masato Kanazawa , Kouji Tamura , Masahiro Yasumi
发明人： Michikazu Matsumoto , Tatsuo Sugiyama , Shinichi Ogawa , Masato Kanazawa , Kouji Tamura , Masahiro Yasumi
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L21/425 , H01L21/3205
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28512 , H01L21/28518
摘要： After forming a polysilicon film to be used as a gate electrode on a semiconductor substrate of silicon, an insulating thin film is deposited on the polysilicon film. Impurity ions are implanted into the polysilicon film through the insulating thin film, so as to form an amorphous layer on the surface of the polysilicon film. After removing the insulating thin film existing on the polysilicon film, a metal film is deposited on the amorphous layer. A reaction is caused between the amorphous layer and the metal film through annealing, so as to form a metal silicide layer on the surface of the polysilicon film.
摘要翻译：在硅的半导体衬底上形成用作栅电极的多晶硅膜之后，在多晶硅膜上沉积绝缘薄膜。通过绝缘薄膜将杂质离子注入到多晶硅膜中，以在多晶硅膜的表面上形成非晶层。在去除存在于多晶硅膜上的绝缘薄膜之后，在非晶层上沉积金属膜。通过退火在非晶层与金属膜之间产生反应，从而在多晶硅膜的表面上形成金属硅化物层。

2. 发明授权

US07600750B2 Paper sheet carrying apparatus having linking device with drop rod apparatus 有权
标题翻译：具有连杆装置和落杆装置的纸张传送装置
公开(公告)号：US07600750B2
公开(公告)日：2009-10-13
申请号：US11959590
申请日：2007-12-19
申请人： Masato Kanazawa
发明人： Masato Kanazawa
IPC分类号： B65H29/38
CPC分类号： B65H3/44 , B65H29/62 , B65H2402/62 , B65H2404/64 , B65H2405/15 , B65H2511/52 , B65H2513/42 , B65H2601/11 , B65H2701/1912 , B65H2801/06 , B65H2220/01 , B65H2220/02
摘要： A paper sheet carrying apparatus is provided that can remove a sheet remained in a path due to paper jam, etc. using a simple mechanism if a sheet remains in any one of two sheet paths or straddles both paths. A sheet path of a first unit is linked to that of a second unit by a linking device and a control mechanism is included that sends to the device and discharges a sheet stopped carrying from the path of the first unit to that of the second unit. When a sheet exists in the path of the second unit, it is carried in opposite direction to the linking device. When a sheet straddles both paths of the first and second units, it is carried to the linking device concurrently in forward direction in the path of the first unit and in opposite in that of the second unit.
摘要翻译：提供一种纸张承载装置，如果片材保持在两个片材路径中的任一个或两个路径中的任一个中，则可以使用简单的机构从由于卡纸等而在路径中残留的片材移除。第一单元的纸张路径通过链接装置链接到第二单元的纸张路径，并且包括控制机构，该控制机构发送到装置并且将从第一单元的路径停止的纸张排出到第二单元的路径。当纸张存在于第二单元的路径中时，其沿着与连接装置相反的方向承载。当片材跨越第一和第二单元的两个路径时，它在第一单元的路径中沿向前的方向同时传送到连接装置，并且与第二单元的路径相反。

3. 发明授权

US07239931B2 Sheet metal factory processing system 有权
标题翻译：钣金厂加工系统
公开(公告)号：US07239931B2
公开(公告)日：2007-07-03
申请号：US10985050
申请日：2004-11-10
申请人： Masato Kanazawa , Kaoru Nakamura
发明人： Masato Kanazawa , Kaoru Nakamura
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32239 , G05B2219/32265 , G05B2219/32294 , G05B2219/35162 , G05B2219/45234 , Y02P90/18 , Y02P90/20 , Y02P90/265
摘要： A sheet metal factory processing system includes a production management apparatus which generates a processing schedule based on a manufacturing designation. The processing schedule is managed in each unit of material sheets. The sheet metal factory processing system also includes a sheet metal factory processing installation which is mutually connected to the production management apparatus through a communication network to execute the processing schedule received from the production management apparatus.
摘要翻译：钣金厂处理系统包括基于制造指定产生处理进度的生产管理装置。处理时间表在每个材料单元中进行管理。钣金加工系统还包括通过通信网络相互连接到生产管理装置的钣金工厂加工装置，以执行从生产管理装置接收的处理进度。

4. 发明授权

US5712194A Semiconductor device including interlayer dielectric film layers and conductive film layers 失效
标题翻译：半导体器件包括层间绝缘膜层和导电膜层
公开(公告)号：US5712194A
公开(公告)日：1998-01-27
申请号：US660745
申请日：1996-06-06
申请人： Masato Kanazawa
发明人： Masato Kanazawa
IPC分类号： H01L21/027 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/441
CPC分类号： H01L21/76843 , H01L21/0276 , H01L21/76801 , H01L21/76804 , H01L21/76814 , H01L21/7684 , H01L23/5226 , H01L23/53219 , H01L23/53223 , H01L2924/0002 , Y10S257/915
摘要： A first interlayer dielectric film layer is formed on a P-type semiconductor substrate. First connection holes are formed at specified positions of the first interlayer dielectric film layer. A first conductive film layer is formed in a region including at least the first connection holes and is composed of three layers by sequentially laminating a barrier metal film, an aluminum alloy film, and an anti-reflection film. A second interlayer dielectric film layer is formed on the first conductive film layer and is composed of a lower layer of silicon oxide film, an intermediate layer of silicon oxide film made of inorganic silica or organic silica, and a upper layer of silicon oxide film. Specified positions of the second interlayer dielectric film layer are selectively removed to form second connection holes. A second conductive film layer is formed thereon and is composed of two layers of refractory metal film in the bottom layer and aluminum alloy film in the top layer.
摘要翻译：在P型半导体衬底上形成第一层间电介质膜层。第一连接孔形成在第一层间电介质膜层的规定位置。在包括至少第一连接孔的区域中形成第一导电膜层，并且通过依次层叠阻挡金属膜，铝合金膜和抗反射膜，由三层构成。在第一导电膜层上形成第二层间绝缘膜层，由下层的氧化硅膜，由无机二氧化硅或有机二氧化硅构成的氧化硅膜的中间层和上层的氧化硅膜构成。选择性地去除第二层间电介质膜层的指定位置以形成第二连接孔。在其上形成第二导电膜层，由底层中的两层难熔金属膜和顶层中的铝合金膜构成。

5. 发明授权

US5459353A Semiconductor device including interlayer dielectric film layers and conductive film layers 失效
标题翻译：半导体器件包括层间绝缘膜层和导电膜层
公开(公告)号：US5459353A
公开(公告)日：1995-10-17
申请号：US369253
申请日：1995-01-05
申请人： Masato Kanazawa
发明人： Masato Kanazawa
IPC分类号： H01L21/027 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/43
CPC分类号： H01L21/76843 , H01L21/0276 , H01L21/76801 , H01L21/76804 , H01L21/76814 , H01L21/7684 , H01L23/5226 , H01L23/53219 , H01L23/53223 , H01L2924/0002 , Y10S257/915
摘要： A first interlayer dielectric film layer is formed on a P-type semiconductor substrate. The first interlayer dielectric film is made of a BPSG film formed by the method of atmospheric pressure chemical vapor deposition. First connection holes are formed at specified positions of the first interlayer dielectric film layer. A first conductive film layer is formed in a region including at least the first connection holes. The first conductive film layer is composed of three layers by sequentially laminating a barrier metal film, an aluminum alloy film, and an anti-reflection film. On the first conductive film layer formed in a specified pattern, a second interlayer dielectric film layer is formed. The second interlayer dielectric film layer is composed of a lower layer of silicon oxide film, an intermediate layer of silicon oxide film made of inorganic silica or organic silica, and an upper layer of silicon oxide film. Specified positions of the second interlayer dielectric film layer are selectively removed. The removed regions become second connection holes. A second conductive film layer is formed thereon. The second conductive film layer is composed of two layers of refractory metal film in the bottom layer and aluminum alloy film in the top layer.
摘要翻译：在P型半导体衬底上形成第一层间电介质膜层。第一层间电介质膜由通过大气压化学气相沉积法形成的BPSG膜制成。第一连接孔形成在第一层间电介质膜层的规定位置。第一导电膜层形成在至少包括第一连接孔的区域中。第一导电膜层通过依次层叠阻挡金属膜，铝合金膜和抗反射膜而由三层构成。在以特定图案形成的第一导电膜层上形成第二层间电介质膜层。第二层间电介质膜层由下层的氧化硅膜，由无机二氧化硅或有机二氧化硅制成的氧化硅膜的中间层和氧化硅膜的上层构成。选择性地去除第二层间电介质膜层的指定位置。被去除的区域成为第二连接孔。在其上形成第二导电膜层。第二导电膜层由底层中的两层耐火金属膜和顶层中的铝合金膜组成。

6. 发明申请

US20050107903A1 Sheet metal factory processing system 有权
标题翻译：钣金厂加工系统
公开(公告)号：US20050107903A1
公开(公告)日：2005-05-19
申请号：US10985050
申请日：2004-11-10
申请人： Masato Kanazawa , Kaoru Nakamura
发明人： Masato Kanazawa , Kaoru Nakamura
IPC分类号： G05B19/418 , G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32239 , G05B2219/32265 , G05B2219/32294 , G05B2219/35162 , G05B2219/45234 , Y02P90/18 , Y02P90/20 , Y02P90/265
摘要： A sheet metal factory processing system includes a production management apparatus which generates a processing schedule based on a manufacturing designation. The processing schedule is managed in each unit of material sheets. The sheet metal factory processing system also includes a sheet metal factory processing installation which is mutually connected to the production management apparatus through a communication network to execute the processing schedule received from the production management apparatus.
摘要翻译：钣金厂处理系统包括基于制造指定产生处理进度的生产管理装置。处理时间表在每个材料单元中进行管理。钣金加工系统还包括通过通信网络相互连接到生产管理装置的钣金工厂加工装置，以执行从生产管理装置接收的处理进度。

7. 发明授权

US07826913B2 Sheet metal factory processing system 有权
标题翻译：钣金厂加工系统
公开(公告)号：US07826913B2
公开(公告)日：2010-11-02
申请号：US11680747
申请日：2007-03-01
申请人： Masato Kanazawa , Kaoru Nakamura
发明人： Masato Kanazawa , Kaoru Nakamura
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32239 , G05B2219/32265 , G05B2219/32294 , G05B2219/35162 , G05B2219/45234 , Y02P90/18 , Y02P90/20 , Y02P90/265
摘要： A sheet metal factory processing system includes a production manager which generates a processing schedule for multiple units each including at least one material sheet, to manage the processing schedule on a per-unit basis. The processing schedule is generated based on sheet processing data obtained by allocating parts to be blanked from the material sheets according to a manufacturing designation. The sheet metal factory processing system also includes a sheet metal factory processing installation which is connected to the production manager through a communication network. The sheet metal factory processing installation receives the generated processing schedule from the production manager and executes the received processing schedule.
摘要翻译：钣金工厂处理系统包括生产管理器，其生产包括至少一个材料板的多个单元的处理计划，以基于每个单元管理处理调度。基于通过根据制造指定从材料片分配要消隐的部件而获得的片材处理数据来生成处理进度。钣金工厂加工系统还包括通过通信网络连接到生产管理器的钣金工厂加工安装。钣金工厂加工设备从生产管理器接收生成的处理进度并执行接收的处理进度。

8. 发明授权

US06713826B2 Method for fabricating a semiconductor device having contacts self-aligned with a gate electrode thereof 失效
标题翻译：用于制造具有与其栅电极自对准的触点的半导体器件的方法
公开(公告)号：US06713826B2
公开(公告)日：2004-03-30
申请号：US10356501
申请日：2003-02-03
申请人： Takashi Uehara , Masato Kanazawa
发明人： Takashi Uehara , Masato Kanazawa
IPC分类号： H01L2976
CPC分类号： H01L21/76897 , H01L21/28061 , H01L29/4941 , H01L29/6656
摘要： A gate electrode is made up of a lower electrode of polysilicon and an upper electrode including a low-resistance film. A nitride sidewall is formed to cover at least the side faces of an insulator cap and the upper electrode. A pad oxide film is formed to cover at least part of the side faces of the lower electrode and part of the upper surface of a semiconductor substrate. Since a second nitride sidewall is formed to cover the first nitride sidewall and the pad oxide film, a self-aligned contact hole can be formed by etching. As a result, a semiconductor device with a highly reliable self-aligned contact can be obtained.
摘要翻译：栅电极由多晶硅的下电极和包括低电阻膜的上电极组成。氮化物侧壁形成为至少覆盖绝缘体盖和上电极的侧面。形成衬垫氧化膜以覆盖下电极的侧面的至少一部分和半导体衬底的上表面的一部分。由于形成第二氮化物侧壁以覆盖第一氮化物侧壁和衬垫氧化物膜，因此可以通过蚀刻形成自对准接触孔。结果，可以获得具有高度可靠的自对准接触的半导体器件。

9. 发明授权

US06573132B1 Method for fabricating a semiconductor device having contacts self-aligned with a gate electrode thereof 失效
公开(公告)号：US06573132B1
公开(公告)日：2003-06-03
申请号：US09515673
申请日：2000-02-29
申请人： Takashi Uehara , Masato Kanazawa
发明人： Takashi Uehara , Masato Kanazawa
IPC分类号： H01L218238
CPC分类号： H01L21/76897 , H01L21/28061 , H01L29/4941 , H01L29/6656
摘要： A gate electrode is made up of a lower electrode of polysilicon and an upper electrode including a low-resistance film. A nitride sidewall is formed to cover at least the side faces of an insulator cap and the upper electrode. A pad oxide film is formed to cover at least part of the side faces of the lower electrode and part of the upper surface of a semiconductor substrate. Since a second nitride sidewall is formed to cover the first nitride sidewall and the pad oxide film, a self-aligned contact hole can be formed by etching. As a result, a semiconductor device with a highly reliable self-aligned contact can be obtained.

10. 发明授权

US6055895A Punched plate material carrying-out system 失效
标题翻译：冲孔板材搬运系统
公开(公告)号：US6055895A
公开(公告)日：2000-05-02
申请号：US975715
申请日：1997-11-21
申请人： Masato Kanazawa
发明人： Masato Kanazawa
IPC分类号： B21D28/26 , B21D43/18 , B21D43/20 , B21D45/04 , B65G47/91 , B65G57/03 , B65G57/04 , B26D7/32 , B23Q7/04
CPC分类号： B65G57/04 , B21D43/18 , B21D43/20 , B65G47/918 , B65G57/035 , Y10T83/0453 , Y10T83/0476 , Y10T83/0524 , Y10T83/145 , Y10T83/162 , Y10T83/18 , Y10T83/2037 , Y10T83/2057 , Y10T83/207 , Y10T83/2185 , Y10T83/222
摘要： A slider of the punch carry out unit is moved in the X-axis direction adjacent a punching section of the punch press machine before or after a plate material is punched into a punched product by a punch press machine. At the same time, a gravity center and a shape of the punched product are calculated and recognized on the basis of the manufacturing data. On the basis of the obtained gravity center and the shape of the punched product, the gravity center of the punched product is moved under the lift arm by the X- and Y-axis locating mechanism. Vacuum pads located just over the punched product are selected or discriminated. Then, the lift arm is lowered and the punched product is held by actuating only the discriminated vacuum pads. During this lift motion, it is preferable to bend one end of the punched product slightly upward to easily separate the punched product from the remaining flat plate material. After the punched product has been lifted, the punched product is moved horizontally away from the punch press, and is then lowered on the punched product supporting unit by releasing only the actuated vacuum pads. Since only the vicinity of the gravity center of the punched product is held by a minimum possible number of the vacuum pads, irrespective of the size and shape of the punched products, the number of the vacuum pads can be reduced.
摘要翻译：在通过冲压机将板材冲压成冲孔制品之前或之后，冲头执行单元的滑块在X轴方向上移动到冲压机的冲压部分。同时，根据制造数据计算并识别冲压产品的重心和形状。根据获得的重心和冲孔产品的形状，穿孔产品的重心由X轴和Y轴定位机构在提升臂下移动。选择或区分位于穿孔产品上方的真空垫。然后，提升臂下降，并且仅通过仅识别被鉴别的真空垫来保持穿孔产品。在该提升运动中，优选地将冲压产品的一端稍微向上弯曲以容易地将冲压产品与剩余的平板材料分离。在冲压产品被提升之后，冲压产品水平地离开冲压机，然后通过仅释放致动的真空垫而在冲压产品支撑单元上下降。由于仅冲孔产品的重心附近被最小可能数量的真空垫保持，与穿孔产品的尺寸和形状无关，因此可以减少真空垫的数量。

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