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1. 发明授权

US5453628A Microelectronic diamond capacitive transducer 失效
标题翻译：微电子金刚石电容式换能器
公开(公告)号：US5453628A
公开(公告)日：1995-09-26
申请号：US322064
申请日：1994-10-12
申请人： Michelle L. Hartsell , Scott R. Sahaida , Brian R. Stoner , Glenn J. Tessmer
发明人： Michelle L. Hartsell , Scott R. Sahaida , Brian R. Stoner , Glenn J. Tessmer
IPC分类号： G01L9/00 , H01L29/84 , H01L29/96
CPC分类号： G01L9/0073
摘要： A capacitive transducer includes a first electrically conductive layer, and a diamond diaphragm mounted opposite the first electrically conductive Layer so as to be moveable relative to the first electrically conductive layer. The first electrically conductive layer defines a first plate for the transducer, while the diaphragm defines the second plate for the transducer. In one embodiment of the transducer, the diamond layer is degeneratively doped providing the second plate. The microelectronic capacitive transducer preferably also includes an insulating layer on a face of the diamond layer adjacent the electrically conductive layer defining an overpressure stop for the transducer. The transducer includes absolute or differential pressure sensing embodiments. The microelectronic capacitive transducer may also be configured as an actuator. The diamond layer may be highly oriented diamond including semiconductor devices formed therein to provide signal conditioning. A fabrication method is also disclosed.
摘要翻译：电容换能器包括第一导电层和与第一导电层相对安装的金刚石膜片，以便相对于第一导电层可移动。第一导电层限定用于换能器的第一板，而隔膜限定用于换能器的第二板。在换能器的一个实施例中，金刚石层退化掺杂，提供第二板。微电子电容换能器优选地还包括在邻近导电层的金刚石层的面上的绝缘层，其限定用于换能器的超压停止。换能器包括绝对或差压感测实施例。微电子电容换能器也可以被配置为致动器。金刚石层可以是包括其中形成的半导体器件的高取向金刚石以提供信号调节。还公开了一种制造方法。

2. 发明授权

US5672240A Methods for forming smooth diamond-based mesa structures 失效
标题翻译：形成平滑金刚石台面结构的方法
公开(公告)号：US5672240A
公开(公告)日：1997-09-30
申请号：US658467
申请日：1996-06-05
申请人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
发明人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
IPC分类号： H01L21/20 , H03H3/08 , H03H9/02 , H01L21/00 , B44C1/22
CPC分类号： H01L21/2007 , H03H3/08 , H03H9/02582
摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.
摘要翻译：基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。

3. 发明授权

US5652436A Smooth diamond based mesa structures 失效
标题翻译：平滑钻石的台面结构
公开(公告)号：US5652436A
公开(公告)日：1997-07-29
申请号：US514656
申请日：1995-08-14
申请人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
发明人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
IPC分类号： H01L21/20 , H03H3/08 , H03H9/02 , H01L31/0312
CPC分类号： H01L21/2007 , H03H3/08 , H03H9/02582
摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.
摘要翻译：基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。

4. 发明授权

US5512873A Highly-oriented diamond film thermistor 失效
标题翻译：高取向金刚石膜热敏电阻
公开(公告)号：US5512873A
公开(公告)日：1996-04-30
申请号：US258608
申请日：1994-06-10
申请人： Kimitsugu Saito , Koichi Miyata , John P. Bade, Jr. , Brian R. Stoner , Jesko A. von Windheim , Scott R. Sahaida
发明人： Kimitsugu Saito , Koichi Miyata , John P. Bade, Jr. , Brian R. Stoner , Jesko A. von Windheim , Scott R. Sahaida
IPC分类号： G01K7/22 , C23C16/26 , C23C16/27 , C23C16/50 , C23C16/511 , C30B29/04 , H01C7/02 , H01C7/04 , H01C7/10
CPC分类号： H01C7/028
摘要： The highly-oriented diamond film thermistor has a temperature sensing part formed of a highly-oriented diamond film grown by chemical vapor deposition. This highly-oriented diamond film satisfies the conditions that at least 65% of the film surface area is covered by (100) or (111) planes of diamond and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystal planes, simultaneously satisfy conditions, .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., .vertline..DELTA..gamma..vertline..ltoreq.5.degree., between adjacent crystal planes.
摘要翻译：高取向金刚石膜热敏电阻具有由通过化学气相沉积生长的高取向金刚石膜形成的温度感测部。这种高度取向的金刚石膜满足以下条件：至少65％的膜表面积被金刚石的（100）或（111）平面覆盖，并且欧拉角{α的差异{DELTAα，DELTAβ，DELTAγ} ，β，γ}，它们代表晶面的取向，同时满足条件 DELTA alpha |

5. 发明授权

US5458733A Method for etching a diamond film 失效
标题翻译：蚀刻金刚石膜的方法
公开(公告)号：US5458733A
公开(公告)日：1995-10-17
申请号：US223521
申请日：1994-04-05
申请人： Glenn J. Tessmer , Brian R. Stoner , David L. Dreifus
发明人： Glenn J. Tessmer , Brian R. Stoner , David L. Dreifus
IPC分类号： C30B29/04 , C23C16/02 , C23C16/26 , C23C16/27 , C23C16/458 , C23C16/50 , C23C16/511 , C30B25/10 , B05D5/00
CPC分类号： C23C16/274 , C23C16/02 , C23C16/4581 , C30B25/105
摘要： Techniques for synthesizing diamond films include a method for anisotropically etching a diamond film. The method includes the steps of selectively patterning a mask layer on a surface of a diamond film and then subjecting the mask layer and exposed surface portions of the diamond film to a hydrogen-containing plasma, while negatively biasing the diamond film to convert the exposed surface portions of the diamond layer to nondiamond carbon. Negatively biasing the diamond film in the hydrogen-containing plasma causes an emission of electrons to thereby convert exposed diamond surface portions to nondiamond carbon. The hydrogen-containing plasma continuously removes the nondiamond carbon from the surface and maintains the electron emission efficiency of the exposed diamond surface so that further etching can take place.
摘要翻译：用于合成金刚石膜的技术包括各向异性蚀刻金刚石膜的方法。该方法包括以下步骤：在金刚石膜的表面上选择性地图案化掩模层，然后使金刚石膜的掩模层和暴露的表面部分经受含氢等离子体，同时负极地偏置金刚石膜以转换暴露表面金刚石层的部分到非金刚石碳。在含氢等离子体中负偏压金刚石膜会导致电子的发射，从而将暴露的金刚石表面部分转化为非金刚石碳。含氢等离子体从表面连续除去非金刚石碳，并保持暴露的金刚石表面的电子发射效率，从而可进行进一步的蚀刻。

6. 发明授权

US08617704B2 Surface modification for enhanced silanation of ceramic materials 有权
标题翻译：用于增强陶瓷材料硅烷化的表面改性
公开(公告)号：US08617704B2
公开(公告)日：2013-12-31
申请号：US13273528
申请日：2011-10-14
申请人： Jeffrey Robert Piascik , Jeffrey Yates Thompson , Sonia Grego , Brian R. Stoner
发明人： Jeffrey Robert Piascik , Jeffrey Yates Thompson , Sonia Grego , Brian R. Stoner
IPC分类号： B32B9/04 , C23C16/00 , C23C16/40 , B32B15/04
CPC分类号： A61L27/306 , A61K6/02 , A61K6/0205 , A61L2400/18 , A61L2430/12 , Y10T156/10 , Y10T428/261 , Y10T428/265 , Y10T428/31667 , A61K6/0017 , C08L43/04
摘要： A coated medical implant, such as a coated dental component, is provided, the coated medical implant including a substrate surface formed of a material comprising available hydroxyl groups and a silicon oxide coating layer chemisorbed on the substrate surface. A method for the preparation of such coated implants is also provided, the method involving application of the silicon oxide coating layer to the substrate surface by chemical vapor deposition. A dental structure is also provided, which includes a first dental component having a substrate surface formed of a material comprising available hydroxyl groups; a silicon oxide coating layer chemisorbed on the substrate surface; a silane coupling agent overlying and covalently attached to the silicon oxide layer; a dental cement overlying and coupled to the silane coupling agent; and a second dental component having a surface bonded to the dental cement.
摘要翻译：提供涂覆的医疗植入物，例如涂覆的牙科部件，涂覆的医疗植入物包括由包含可用羟基的材料形成的基底表面和在基底表面上化学吸附的氧化硅被覆层。还提供了用于制备这种涂覆植入物的方法，该方法包括通过化学气相沉积将氧化硅涂层施加到基底表面。还提供牙科结构，其包括具有由包含可用羟基的材料形成的基底表面的第一牙齿部件; 化学吸附在基材表面上的氧化硅涂层; 覆盖并共价连接到氧化硅层上的硅烷偶联剂; 覆盖并与硅烷偶联剂偶联的牙科水泥; 以及具有粘合到所述牙科粘固剂的表面的第二牙齿部件。

7. 发明授权

US06267866B1 Fabrication of a high surface area boron-doped diamond coated metal mesh for electrochemical applications 失效
标题翻译：制造用于电化学应用的高表面积硼掺杂金刚石涂层金属网
公开(公告)号：US06267866B1
公开(公告)日：2001-07-31
申请号：US09418355
申请日：1999-10-14
申请人： John W. Glesener , Paul M. Natishan , William E. O'Grady , Arthur A. Morrish , Brian R. Stoner , Patrick L. Hagans
发明人： John W. Glesener , Paul M. Natishan , William E. O'Grady , Arthur A. Morrish , Brian R. Stoner , Patrick L. Hagans
IPC分类号： C25B300
CPC分类号： G01N27/308 , C02F1/46109 , C02F1/4672 , C02F1/4676 , C02F2001/46138 , C02F2001/46157 , C02F2101/30 , C02F2101/36 , C02F2305/023 , C25B11/0478
摘要： An electrode for electrochemical uses is made of a conductive metal mesh coated with boron-doped diamond. The electrode may be used in electrochemical reactions either as a cathode or as an anode, or can be used with an alternating current.
摘要翻译：用于电化学用途的电极由涂覆有硼掺杂金刚石的导电金属网制成。电极可以用作电化学反应，作为阴极或阳极，或者可以与交流电一起使用。

8. 发明授权

US5420443A Microelectronic structure having an array of diamond structures on a nondiamond substrate and associated fabrication methods 失效
标题翻译：微电子结构在非金刚石衬底上具有金刚石结构阵列，并且具有相关的制造方法
公开(公告)号：US5420443A
公开(公告)日：1995-05-30
申请号：US35643
申请日：1993-03-23
申请人： David L. Dreifus , Brian R. Stoner , Jeffrey T. Glass
发明人： David L. Dreifus , Brian R. Stoner , Jeffrey T. Glass
IPC分类号： C30B29/04 , C23C16/02 , C23C16/26 , C23C16/27 , C23C16/458 , C23C16/50 , C23C16/511 , C30B25/10 , H01L21/205 , H01L21/338
CPC分类号： C23C16/274 , C23C16/02 , C23C16/4581 , C30B25/105
摘要： A microelectronic structure including a plurality of spaced apart diamond structures on which a plurality of semiconductor devices may be formed. The semiconductor devices include a semiconducting diamond layer on each of the diamond structures. The diamond structures are preferably oriented relative to a single crystal nondiamond substrate so that the diamond structures have a (100)-oriented outer face for forming the semiconductor devices thereon. The microelectronic structure may be diced into discrete devices, or the devices interconnected, such as to form a higher powered device. One embodiment of the microelectronic structure includes the plurality of diamond structures, wherein each diamond structure is formed of a highly oriented textured diamond layer approaching single crystal quality, yet capable of fabrication on a single crystal nondiamond substrate. A method for fabricating the nondiamond highly oriented textured diamond layer includes carburizing a face of the nondiamond substrate, nucleating the carburized face by electrical bias enhanced nucleation, and selectively growing diamond favoring growth of the (100)-oriented grains.
摘要翻译：一种微电子结构，包括多个间隔开的金刚石结构，其上可以形成多个半导体器件。半导体器件包括在每个金刚石结构上的半导体金刚石层。金刚石结构优选相对于单晶非金刚石基底定向，使得金刚石结构具有用于在其上形成半导体器件的（100）取向的外表面。微电子结构可以被切割成分立的设备，或者互连的设备，以形成更高功率的设备。微电子结构的一个实施例包括多个金刚石结构，其中每个金刚石结构由接近单晶质量的高取向纹理金刚石层形成，但能够在单晶非金刚石基底上制造。用于制造非金刚石高取向纹理金刚石层的方法包括使非金刚石基底的表面渗碳，通过电偏压增强的成核使渗碳表面成核，以及选择性地生长有利于（100）取向晶粒生长的金刚石。

9. 发明授权

US5397428A Nucleation enhancement for chemical vapor deposition of diamond 失效
标题翻译：金刚石化学气相沉积的成核增强
公开(公告)号：US5397428A
公开(公告)日：1995-03-14
申请号：US937481
申请日：1992-08-28
申请人： Brian R. Stoner , Jeffrey T. Glass , William M. Hooke , Bradley E. Williams
发明人： Brian R. Stoner , Jeffrey T. Glass , William M. Hooke , Bradley E. Williams
IPC分类号： C30B29/04 , C23C16/02 , C23C16/26 , C23C16/27 , C23C16/458 , C23C16/50 , C23C16/511 , C30B25/10 , C30B29/00
CPC分类号： C23C16/274 , C23C16/02 , C23C16/4581 , C30B25/105
摘要： A method and apparatus for enhancing the nucleation of diamond by pretreating a substrate by electrically biasing a diamond film adjacent the substrate while exposing the substrate and the thus biased diamond film to a carbon-containing plasma. The bias pretreatment may be maintained for a time period in the range of about 1 hour to 2 hours to achieve a high diamond nucleation density. Alternatively, the biasing may be continued until diamond film formation is indicated by a change in reflectivity of the surface of the substrate. The biasing pretreating may be used to nucleate diamond heteroepitaxially on a substrate having a surface film formed of a material having a relatively close lattice match to diamond, such as .beta.-silicon carbide. The apparatus includes a laser reflection interferometer to monitor the surface of the substrate. The laser reflection interferometer is used to monitor growth of the diamond film and cooperates with a controller to control the processing parameters during the diamond growing process.
摘要翻译：一种用于通过在将衬底和由此偏置的金刚石膜暴露于含碳等离子体的同时电气偏置邻近衬底的金刚石膜来预处理衬底来增强金刚石成核的方法和装置。偏置预处理可以在约1小时至2小时的范围内保持一段时间，以获得高的金刚石成核密度。或者，可以继续施加偏压，直到金刚石膜形成由衬底的表面的反射率的变化来表示。偏置预处理可用于使具有异质外延的金刚石成核，该基体具有由具有与金刚石相似的晶格匹配的材料形成的表面膜，例如β-碳化硅。该装置包括用于监测基板表面的激光反射干涉仪。激光反射干涉仪用于监测金刚石膜的生长，并与控制器配合以控制金刚石生长过程中的加工参数。

10. 发明申请

US20120034572A1 SURFACE MODIFICATION FOR ENHANCED SILANATION OF CERAMIC MATERIALS 有权
标题翻译：陶瓷材料增强硅烷表面改性
公开(公告)号：US20120034572A1
公开(公告)日：2012-02-09
申请号：US13273528
申请日：2011-10-14
申请人： Jeffrey Robert Piascik , Jeffrey Yates Thompson , Sonia Grego , Brian R. Stoner
发明人： Jeffrey Robert Piascik , Jeffrey Yates Thompson , Sonia Grego , Brian R. Stoner
IPC分类号： A61C8/00 , A61C13/007 , A61C5/04 , A61C5/00 , B32B37/12 , A61C7/14 , C23C16/40 , B32B37/14 , C23C16/02 , A61C5/08 , A61C5/02
CPC分类号： A61L27/306 , A61K6/02 , A61K6/0205 , A61L2400/18 , A61L2430/12 , Y10T156/10 , Y10T428/261 , Y10T428/265 , Y10T428/31667 , A61K6/0017 , C08L43/04
摘要： A coated medical implant, such as a coated dental component, is provided, the coated medical implant including a substrate surface formed of a material comprising available hydroxyl groups and a silicon oxide coating layer chemisorbed on the substrate surface. A method for the preparation of such coated implants is also provided, the method involving application of the silicon oxide coating layer to the substrate surface by chemical vapor deposition. A dental structure is also provided, which includes a first dental component having a substrate surface formed of a material comprising available hydroxyl groups; a silicon oxide coating layer chemisorbed on the substrate surface; a silane coupling agent overlying and covalently attached to the silicon oxide layer; a dental cement overlying and coupled to the silane coupling agent; and a second dental component having a surface bonded to the dental cement.
摘要翻译：提供涂覆的医疗植入物，例如涂覆的牙科部件，涂覆的医疗植入物包括由包含可用羟基的材料形成的基底表面和在基底表面上化学吸附的氧化硅被覆层。还提供了一种用于制备这种涂覆植入物的方法，该方法包括通过化学气相沉积将氧化硅涂层施加到基底表面。还提供牙科结构，其包括具有由包含可用羟基的材料形成的基底表面的第一牙齿部件; 化学吸附在基材表面上的氧化硅涂层; 覆盖并共价连接到氧化硅层上的硅烷偶联剂; 覆盖并与硅烷偶联剂偶联的牙科水泥; 以及具有粘合到所述牙科粘固剂的表面的第二牙齿部件。

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