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1. 发明申请

US20080280395A1 Semiconducting device with stacked dice 有权
公开(公告)号：US20080280395A1
公开(公告)日：2008-11-13
申请号：US12148874
申请日：2008-04-22
申请人： Scott R. Sahaida , Iwen Chao
发明人： Scott R. Sahaida , Iwen Chao
IPC分类号： H01L21/58
CPC分类号： G11C5/06 , H01L25/0657 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2224/73265 , H01L2225/0651 , H01L2225/06555 , H01L2225/06575 , H01L2924/00014 , H01L2924/00
摘要： Some embodiments of the present invention relate to a semiconducting device and method that include a substrate and a first die that is attached to the substrate. The first die includes active circuitry (e.g., a flash memory array or logic circuitry) on an upper surface of the first die. The semiconducting device further includes a spacer that covers the active circuitry on the upper surface of the first die and a second die that is stacked onto the spacer and the first die. The spacer extends from a first side of the first die to an opposing second side of the first die. The spacer also extends near a third side of the first die and an opposing fourth side of the first die such that the active circuitry is exposed near the third and fourth sides of the first die.

2. 发明授权

US07741155B2 Method of manufacturing semiconducting device with stacked dice 有权
标题翻译：制造具有堆叠骰子的半导体器件的方法
公开(公告)号：US07741155B2
公开(公告)日：2010-06-22
申请号：US12148874
申请日：2008-04-22
申请人： Scott R. Sahaida , Iwen Chao
发明人： Scott R. Sahaida , Iwen Chao
IPC分类号： H01L21/58
CPC分类号： G11C5/06 , H01L25/0657 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2224/73265 , H01L2225/0651 , H01L2225/06555 , H01L2225/06575 , H01L2924/00014 , H01L2924/00
摘要： Some embodiments of the present invention relate to a semiconducting device and method that include a substrate and a first die that is attached to the substrate. The first die includes active circuitry (e.g., a flash memory array or logic circuitry) on an upper surface of the first die. The semiconducting device further includes a spacer that covers the active circuitry on the upper surface of the first die and a second die that is stacked onto the spacer and the first die. The spacer extends from a first side of the first die to an opposing second side of the first die. The spacer also extends near a third side of the first die and an opposing fourth side of the first die such that the active circuitry is exposed near the third and fourth sides of the first die.
摘要翻译：本发明的一些实施例涉及一种半导体器件和方法，其包括衬底和附接到衬底的第一裸片。第一管芯包括在第一管芯的上表面上的有源电路（例如，闪存阵列或逻辑电路）。半导体器件还包括覆盖第一裸片的上表面上的有源电路的隔离物和堆叠在间隔物和第一裸片上的第二裸片。间隔件从第一管芯的第一侧延伸到第一管芯的相对的第二侧。间隔件还在第一管芯的第三侧附近延伸并且在第一管芯的相对的第四侧延伸，使得有源电路在第一管芯的第三和第四侧附近暴露。

3. 发明授权

US5652436A Smooth diamond based mesa structures 失效
标题翻译：平滑钻石的台面结构
公开(公告)号：US5652436A
公开(公告)日：1997-07-29
申请号：US514656
申请日：1995-08-14
申请人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
发明人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
IPC分类号： H01L21/20 , H03H3/08 , H03H9/02 , H01L31/0312
CPC分类号： H01L21/2007 , H03H3/08 , H03H9/02582
摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.
摘要翻译：基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。

4. 发明授权

US5453628A Microelectronic diamond capacitive transducer 失效
标题翻译：微电子金刚石电容式换能器
公开(公告)号：US5453628A
公开(公告)日：1995-09-26
申请号：US322064
申请日：1994-10-12
申请人： Michelle L. Hartsell , Scott R. Sahaida , Brian R. Stoner , Glenn J. Tessmer
发明人： Michelle L. Hartsell , Scott R. Sahaida , Brian R. Stoner , Glenn J. Tessmer
IPC分类号： G01L9/00 , H01L29/84 , H01L29/96
CPC分类号： G01L9/0073
摘要： A capacitive transducer includes a first electrically conductive layer, and a diamond diaphragm mounted opposite the first electrically conductive Layer so as to be moveable relative to the first electrically conductive layer. The first electrically conductive layer defines a first plate for the transducer, while the diaphragm defines the second plate for the transducer. In one embodiment of the transducer, the diamond layer is degeneratively doped providing the second plate. The microelectronic capacitive transducer preferably also includes an insulating layer on a face of the diamond layer adjacent the electrically conductive layer defining an overpressure stop for the transducer. The transducer includes absolute or differential pressure sensing embodiments. The microelectronic capacitive transducer may also be configured as an actuator. The diamond layer may be highly oriented diamond including semiconductor devices formed therein to provide signal conditioning. A fabrication method is also disclosed.
摘要翻译：电容换能器包括第一导电层和与第一导电层相对安装的金刚石膜片，以便相对于第一导电层可移动。第一导电层限定用于换能器的第一板，而隔膜限定用于换能器的第二板。在换能器的一个实施例中，金刚石层退化掺杂，提供第二板。微电子电容换能器优选地还包括在邻近导电层的金刚石层的面上的绝缘层，其限定用于换能器的超压停止。换能器包括绝对或差压感测实施例。微电子电容换能器也可以被配置为致动器。金刚石层可以是包括其中形成的半导体器件的高取向金刚石以提供信号调节。还公开了一种制造方法。

5. 发明授权

US5512873A Highly-oriented diamond film thermistor 失效
标题翻译：高取向金刚石膜热敏电阻
公开(公告)号：US5512873A
公开(公告)日：1996-04-30
申请号：US258608
申请日：1994-06-10
申请人： Kimitsugu Saito , Koichi Miyata , John P. Bade, Jr. , Brian R. Stoner , Jesko A. von Windheim , Scott R. Sahaida
发明人： Kimitsugu Saito , Koichi Miyata , John P. Bade, Jr. , Brian R. Stoner , Jesko A. von Windheim , Scott R. Sahaida
IPC分类号： G01K7/22 , C23C16/26 , C23C16/27 , C23C16/50 , C23C16/511 , C30B29/04 , H01C7/02 , H01C7/04 , H01C7/10
CPC分类号： H01C7/028
摘要： The highly-oriented diamond film thermistor has a temperature sensing part formed of a highly-oriented diamond film grown by chemical vapor deposition. This highly-oriented diamond film satisfies the conditions that at least 65% of the film surface area is covered by (100) or (111) planes of diamond and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystal planes, simultaneously satisfy conditions, .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., .vertline..DELTA..gamma..vertline..ltoreq.5.degree., between adjacent crystal planes.
摘要翻译：高取向金刚石膜热敏电阻具有由通过化学气相沉积生长的高取向金刚石膜形成的温度感测部。这种高度取向的金刚石膜满足以下条件：至少65％的膜表面积被金刚石的（100）或（111）平面覆盖，并且欧拉角{α的差异{DELTAα，DELTAβ，DELTAγ} ，β，γ}，它们代表晶面的取向，同时满足条件 DELTA alpha |

6. 发明授权

US5155559A High temperature refractory silicide rectifying contact 失效
$High temperature refractory silicide rectifying contact$
标题翻译：高温耐火硅化物整流接触
公开(公告)号：US5155559A
公开(公告)日：1992-10-13
申请号：US735534
申请日：1991-07-25
申请人： Trevor P. Humphreys , Robert J. Nemanich , Kalyankumar Das , Dale G. Thompson, Jr. , Scott R. Sahaida
发明人： Trevor P. Humphreys , Robert J. Nemanich , Kalyankumar Das , Dale G. Thompson, Jr. , Scott R. Sahaida
IPC分类号： H01L21/285 , H01L29/16 , H01L29/47
CPC分类号： H01L29/1602 , H01L21/28537 , H01L29/16 , H01L29/47
摘要： A semiconductor device comprising a semiconducting diamond layer, (e.g. single crystal or polycrystalline), a refractory metal silicide layer adjacent the diamond layer for forming a rectifying contact therewith, and an annealed interface region between the diamond layer and the refractory metal silicide layer. The annealed interface region is preferably a non-abrupt interface comprising material selected from the group consisting of silicon carbide, the carbide of the refractory metal and mixtures thereof. The present invention also provides a method for making a rectifying contact on a semiconducting diamond layer comprising the steps of forming a refractory metal silicide on the diamond layer, and annealing the refractory metal silicide and diamond layer. Preferably, the step of annealing comprises the step of heating the diamond layer and refractory metal silicide at temperature of at least about 450.degree. C.
摘要翻译：包括半导体金刚石层（例如单晶或多晶），与金刚石层相邻的难熔金属硅化物层以形成与其整流接触的半导体器件以及金刚石层与难熔金属硅化物层之间的退火界面区域。退火的界面区优选是非突变界面，其包括选自碳化硅，难熔金属的碳化物及其混合物的材料。本发明还提供了一种在半导体金刚石层上制造整流接触的方法，包括在金刚石层上形成难熔金属硅化物，以及对难熔金属硅化物和金刚石层进行退火的步骤。优选地，退火步骤包括在至少约450℃的温度下加热金刚石层和难熔金属硅化物的步骤。

7. 发明授权

US07378725B2 Semiconducting device with stacked dice 有权
标题翻译：具有堆叠骰子的半导体器件
公开(公告)号：US07378725B2
公开(公告)日：2008-05-27
申请号：US10815966
申请日：2004-03-31
申请人： Scott R. Sahaida , Iwen Chao
发明人： Scott R. Sahaida , Iwen Chao
IPC分类号： H01L23/12
CPC分类号： G11C5/06 , H01L25/0657 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2224/73265 , H01L2225/0651 , H01L2225/06555 , H01L2225/06575 , H01L2924/00014 , H01L2924/00
摘要： Some embodiments of the present invention relate to a semiconducting device and method that include a substrate and a first die that is attached to the substrate. The first die includes active circuitry (e.g., a flash memory array or logic circuitry) on an upper surface of the first die. The semiconducting device further includes a spacer that covers the active circuitry on the upper surface of the first die and a second die that is stacked onto the spacer and the first die. The spacer extends from a first side of the first die to an opposing second side of the first die. The spacer also extends near a third side of the first die and an opposing fourth side of the first die such that the active circuitry is exposed near the third and fourth sides of the first die.
摘要翻译：本发明的一些实施例涉及一种半导体器件和方法，其包括衬底和附接到衬底的第一裸片。第一管芯包括在第一管芯的上表面上的有源电路（例如，闪存阵列或逻辑电路）。半导体器件还包括覆盖第一裸片的上表面上的有源电路的隔离物和堆叠在间隔物和第一裸片上的第二裸片。间隔件从第一管芯的第一侧延伸到第一管芯的相对的第二侧。间隔件还在第一管芯的第三侧附近延伸并且在第一管芯的相对的第四侧延伸，使得有源电路在第一管芯的第三和第四侧附近暴露。

8. 发明授权

US5672240A Methods for forming smooth diamond-based mesa structures 失效
标题翻译：形成平滑金刚石台面结构的方法
公开(公告)号：US5672240A
公开(公告)日：1997-09-30
申请号：US658467
申请日：1996-06-05
申请人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
发明人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
IPC分类号： H01L21/20 , H03H3/08 , H03H9/02 , H01L21/00 , B44C1/22
CPC分类号： H01L21/2007 , H03H3/08 , H03H9/02582
摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.
摘要翻译：基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。

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