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1. 发明申请

US20080093629A1 METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO 有权
标题翻译：具有夏普HALO的金属氧化物场效应晶体管
公开(公告)号：US20080093629A1
公开(公告)日：2008-04-24
申请号：US11955591
申请日：2007-12-13
申请人： Huajie Chen , Judson Holt , Rangarajan Jagannathan , Wesley Natzle , Michael Sievers , Richard Wise
发明人： Huajie Chen , Judson Holt , Rangarajan Jagannathan , Wesley Natzle , Michael Sievers , Richard Wise
IPC分类号： H01L29/778
CPC分类号： H01L29/66636 , H01L29/6659 , H01L29/7833
摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.
摘要翻译：公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。蚀刻半导体层以形成切割栅极介电层的凹部。低能量植入物形成晕轮。然后，执行COR预清洁，并且通过外延沉积填充凹部。外延可以被原位掺杂或随后植入以形成源/漏扩展。或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

2. 发明申请

US20070275510A1 METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO AND A METHOD OF FORMING THE TRANSISTOR 有权
标题翻译：具有夏普HALO的金属氧化物场效应晶体管和形成晶体管的方法
公开(公告)号：US20070275510A1
公开(公告)日：2007-11-29
申请号：US11420318
申请日：2006-05-25
申请人： Huajie Chen , Judson R. Holt , Rangarajan Jagannathan , Wesley C. Natzle , Michael R. Sievers , Richard S. Wise
发明人： Huajie Chen , Judson R. Holt , Rangarajan Jagannathan , Wesley C. Natzle , Michael R. Sievers , Richard S. Wise
IPC分类号： H01L21/8232 , H01L21/8234 , H01L21/335
CPC分类号： H01L29/66636 , H01L29/6659 , H01L29/7833
摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.
摘要翻译：公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。蚀刻半导体层以形成切割栅极介电层的凹部。低能量植入物形成晕轮。然后，执行COR预清洁，并且通过外延沉积填充凹部。外延可以被原位掺杂或随后植入以形成源/漏扩展。或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

3. 发明授权

US07859013B2 Metal oxide field effect transistor with a sharp halo 有权
标题翻译：金属氧化物场效应晶体管具有尖锐的光晕
公开(公告)号：US07859013B2
公开(公告)日：2010-12-28
申请号：US11955591
申请日：2007-12-13
申请人： Huajie Chen , Judson R. Holt , Rangarajan Jagannathan , Wesley C. Natzle , Michael R. Sievers , Richard S. Wise
发明人： Huajie Chen , Judson R. Holt , Rangarajan Jagannathan , Wesley C. Natzle , Michael R. Sievers , Richard S. Wise
IPC分类号： H01L21/02
CPC分类号： H01L29/66636 , H01L29/6659 , H01L29/7833
摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.
摘要翻译：公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。蚀刻半导体层以形成切割栅极介电层的凹部。低能量植入物形成晕轮。然后，执行COR预清洁，并且通过外延沉积填充凹部。外延可以被原位掺杂或随后植入以形成源/漏扩展。或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

4. 发明授权

US07384835B2 Metal oxide field effect transistor with a sharp halo and a method of forming the transistor 有权
标题翻译：具有尖锐光晕的金属氧化物场效应晶体管和形成晶体管的方法
公开(公告)号：US07384835B2
公开(公告)日：2008-06-10
申请号：US11420318
申请日：2006-05-25
申请人： Huajie Chen , Judson R Holt , Rangarajan Jagannathan , Wesley C Natzle , Michael R Sievers , Richard S Wise
发明人： Huajie Chen , Judson R Holt , Rangarajan Jagannathan , Wesley C Natzle , Michael R Sievers , Richard S Wise
IPC分类号： H01L21/335
CPC分类号： H01L29/66636 , H01L29/6659 , H01L29/7833
摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.
摘要翻译：公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。蚀刻半导体层以形成切割栅极介电层的凹部。低能量植入物形成晕轮。然后，执行COR预清洁，并且通过外延沉积填充凹部。外延可以被原位掺杂或随后植入以形成源/漏扩展。或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

5. 发明申请

US20060024934A1 CHEMICAL TREATMENT TO RETARD DIFFUSION IN A SEMICONDUCTOR OVERLAYER 失效
标题翻译：化学处理延缓半导体覆盖层的扩散
公开(公告)号：US20060024934A1
公开(公告)日：2006-02-02
申请号：US10710737
申请日：2004-07-30
申请人： Kevin Chan , Huajie Chen , Michael Gribelyuk , Judson Holt , Woo-Hyeong Lee , Ryan Mitchell , Renee Mo , Dan Mocuta , Werner Rausch , Paul Ronsheim , Henry Utomo
发明人： Kevin Chan , Huajie Chen , Michael Gribelyuk , Judson Holt , Woo-Hyeong Lee , Ryan Mitchell , Renee Mo , Dan Mocuta , Werner Rausch , Paul Ronsheim , Henry Utomo
IPC分类号： H01L21/22 , H01L21/331
CPC分类号： H01L21/28044 , H01L21/324
摘要： The present invention provides a method for retarding the diffusion of dopants from a first material layer (typically a semiconductor) into an overlayer or vice versa. In the method of the present invention, diffusion of dopants from the first semiconductor into the overlayer or vice versa is retarded by forming a monolayer comprising carbon and oxygen between the two layers. The monolayer is formed in the present invention utilizing a chemical pretreatment process in which a solution including iodine and an alcohol such as methanol is employed.
摘要翻译：本发明提供了一种用于延迟掺杂剂从第一材料层（通常为半导体）扩散到覆盖层或反之亦然的方法。在本发明的方法中，通过在两层之间形成包含碳和氧的单层来延缓掺杂剂从第一半导体扩散到覆层中或反之亦然。使用化学预处理方法在本发明中形成单层，其中使用包括碘和醇如甲醇的溶液。

6. 发明申请

US20140175932A1 MOTOR AND ROTOR THEREOF 有权
标题翻译：电机和转子
公开(公告)号：US20140175932A1
公开(公告)日：2014-06-26
申请号：US14235617
申请日：2011-08-29
申请人： Hui Huang , Wenming Zhang , Yong Xiao , Xueying Zeng , Huajie Chen , Dongsuo Chen , Yusheng Hu
发明人： Hui Huang , Wenming Zhang , Yong Xiao , Xueying Zeng , Huajie Chen , Dongsuo Chen , Yusheng Hu
IPC分类号： H02K1/27
CPC分类号： H02K1/2766 , H02K1/246 , H02K2213/03
摘要： Disclosed are a motor and a rotor thereof. Taking the distance between the two endpoints of a permanent magnet (20) of a motor rotor that are on the side away from the centre of an iron core (10) as the length L of the permanent magnet, and the distance between a line connecting the two endpoints of the permanent magnet that are on the side away from the centre of the iron core (10) and the centre point on the side of the permanent magnet that is close to the centreline of the iron core as the width H of the permanent magnet, then H/L≧1/10. By adjusting the relationship between the length L and width H of the permanent magnet, the air gap magnetic density of the permanent magnet can be effectively increased, i.e. increasing the permanent magnetic flux of the rotor in the directions of the d axis and q axis. Hence, the utilization rate of the permanent magnet and the performance of the rotor can be improved without increasing the number of permanent magnets used.
摘要翻译：公开了一种电机及其转子。将离开铁芯（10）的中心的一侧的电动机转子的永久磁铁（20）的两个端点之间的距离设为永久磁铁的长度L，以及连接线远离铁芯（10）的中心的一侧的永久磁体的两个端点和永久磁体侧的中心点接近铁芯的中心线，作为永磁体，H /L≥1/ 10。通过调整永磁体的长度L和宽度H之间的关系，可以有效地增加永磁体的气隙磁密度，即增加转子在d轴和q轴方向上的永久磁通量。因此，可以提高永久磁铁的利用率和转子的性能，而不增加使用的永磁体的数量。

7. 发明申请

US20140167550A1 MOTOR ROTOR AND MOTOR HAVING SAME 审中-公开
标题翻译：电机转子和电机
公开(公告)号：US20140167550A1
公开(公告)日：2014-06-19
申请号：US14235611
申请日：2011-08-29
申请人： Hui Huang , Yusheng Hu , Dongsuo Chen , Huajie Chen , Yong Xiao , Xueying Zeng , Wenming Zhang
发明人： Hui Huang , Yusheng Hu , Dongsuo Chen , Huajie Chen , Yong Xiao , Xueying Zeng , Wenming Zhang
IPC分类号： H02K1/27
CPC分类号： H02K1/2766 , H02K1/246 , H02K2213/03
摘要： Disclosed are a motor rotor and a motor having same, wherein the motor rotor comprises an iron core (10) and permanent magnets (20) provided within the iron core (10), sets of mounting grooves (30) are provided in the peripheral direction of the iron core, with each set of mounting grooves comprising more than two mounting grooves (30) arranged intermittently in the radial direction of the iron core (10). The permanent magnets (20) are correspondingly embedded into the individual mounting grooves (30). The thickness of the permanent magnet (20) at the centre of the cross section thereof and perpendicular to the rotor axis is greater than the thickness at both ends thereof. The rotor optimizes the shape of the permanent magnets (20) and improves the efficiency of the motor.
摘要翻译：公开了一种电动机转子和具有该电动机转子的电动机，其中，所述电动机转子包括设置在所述铁芯（10）内的铁芯（10）和永磁体（20），所述安装槽（30）其中每组安装槽包括沿着铁芯（10）的径向方向间歇地设置的多于两个的安装槽（30）。永磁体（20）相应地嵌入到各个安装槽（30）中。永磁体（20）的横截面中心并且与转子轴线垂直的厚度大于其两端的厚度。转子优化永磁体（20）的形状，提高电动机的效率。

8. 发明申请

US20140152139A1 PERMANENT MAGNET SYNCHRONOUS MOTOR 审中-公开
标题翻译：永磁同步电机
公开(公告)号：US20140152139A1
公开(公告)日：2014-06-05
申请号：US14235408
申请日：2011-08-31
申请人： Hui Huang , Yusheng Hu , Dongsuo Chen , Huajie Chen , Yong Xiao , Xueying Zeng , Wenming Zhang
发明人： Hui Huang , Yusheng Hu , Dongsuo Chen , Huajie Chen , Yong Xiao , Xueying Zeng , Wenming Zhang
IPC分类号： H02K1/27
CPC分类号： H02K1/2766 , H02K1/276 , H02K21/16 , H02K2213/03
摘要： Disclosed is a permanent magnet synchronous motor comprising a stator (1) and a rotor (2), wherein the stator (1) is provided thereon with a plurality of wire slots (3) in a circumferential direction, the rotor (2) is provided therein with a plurality of sets of magnet slots (5) in a circumferential direction, with the wire slots (3) being provided therein with coils (4) and the sets of magnet slots (5) being provided therein with permanent magnets (7); the number of poles of the permanent magnets (7) on the rotor (2) is P, the spacing between two adjacent sets of magnet slots (5) is W, the tooth width of the stator (1) is Lc, and the number of the wire slots (3) on the stator (1) is S, wherein 3PW/LcS=K, and 0.15≦K≦0.85. The permanent magnet synchronous motor can reduce dependence on rare earth and improve the output torque of the permanent magnet synchronous motor.
摘要翻译：公开了一种永磁同步电动机，其包括定子（1）和转子（2），其中定子（1）沿圆周方向设置有多个线槽（3），转子（2）设置其中在圆周方向上具有多组磁体槽（5），其中线槽（3）中设置有线圈（4），并且在其中设置有永磁体（7）的一组磁体槽（5） ; 转子（2）上的永磁体（7）的极数为P，相邻的两组磁体槽（5）之间的间隔为W，定子（1）的齿宽为Lc，定子（1）上的电线槽（3）的S为S，其中3PW / LcS = K，和0.15＆nlE; K＆nlE; 0.85。永磁同步电机可以减少对稀土的依赖，提高永磁同步电机的输出转矩。

9. 发明申请

US20140145539A1 PERMANENT MAGNET SYNCHRONOUS ELECTRIC MACHINE 有权
标题翻译：永磁同步电机
公开(公告)号：US20140145539A1
公开(公告)日：2014-05-29
申请号：US14235574
申请日：2011-08-31
申请人： Hui Huang , Yusheng Hu , Dongsuo Chen , Huajie Chen , Yong Xiao , Xueying Zeng , Wenming Zhang
发明人： Hui Huang , Yusheng Hu , Dongsuo Chen , Huajie Chen , Yong Xiao , Xueying Zeng , Wenming Zhang
IPC分类号： H02K1/27
CPC分类号： H02K1/2766
摘要： Disclosed is a permanent magnet synchronous electric machine, comprising a stator (1) and a rotor (2). A plurality of wire grooves (3) are provided peripherally on the stator (1), coils (4) are provided within the wire grooves (3), and a stator tooth (5) is provided between adjacent wire grooves (3). A plurality of magnetic groove sets (6) is provided peripherally within the rotor (2), each of the magnetic groove sets (6) comprising at least two magnetic steel grooves (7), with permanent magnets (8) placed within the magnetic steel grooves (7), and a magnetic channel (9) formed between the magnetic steel grooves (7). Of two adjacent magnetic channels (9), an end of one magnetic channel (9) is opposite a wire groove (3) and an end of the other magnetic channel (9) is opposite a stator tooth (5). The permanent magnet synchronous electric machine has a more steady output torque, and also reduces the noise and vibration provided during operation.
摘要翻译：公开了一种永磁同步电机，包括定子（1）和转子（2）。在定子（1）周围设有多个线槽（3），线圈（4）设置在线槽（3）内，定子齿（5）设置在相邻的线槽（3）之间。在转子（2）的周围设置有多个磁性槽组（6），每个磁性槽组（6）包括至少两个磁钢槽（7），永磁体（8）放置在磁钢凹槽（7）和形成在磁钢槽（7）之间的磁通道（9）。在两个相邻的磁通道（9）中，一个磁通道（9）的一端与电线槽（3）相对，另一磁通道（9）的一端与定子齿（5）相对。永磁同步电机具有更稳定的输出转矩，并且还降低了运行中提供的噪声和振动。

10. 发明授权

US07923782B2 Hybrid SOI/bulk semiconductor transistors 有权
标题翻译：混合SOI /体半导体晶体管
公开(公告)号：US07923782B2
公开(公告)日：2011-04-12
申请号：US10708378
申请日：2004-02-27
申请人： Huilong Zhu , Philip J. Oldiges , Bruce B. Doris , Xinlin Wang , Oleg Gluschenkov , Huajie Chen , Ying Zhang
发明人： Huilong Zhu , Philip J. Oldiges , Bruce B. Doris , Xinlin Wang , Oleg Gluschenkov , Huajie Chen , Ying Zhang
IPC分类号： H01L27/01 , H01L27/12
CPC分类号： H01L29/7849 , H01L29/0653 , H01L29/1054 , H01L29/7842 , H01L29/78603 , H01L29/78612 , H01L29/78618 , H01L29/78687
摘要： Channel depth in a field effect transistor is limited by an intra-layer structure including a discontinuous film or layer formed within a layer or substrate of semiconductor material. Channel depth can thus be controlled much in the manner of SOI or UT-SOI technology but with less expensive substrates and greater flexibility of channel depth control while avoiding floating body effects characteristic of SOI technology. The profile or cross-sectional shape of the discontinuous film may be controlled to an ogee or staircase shape to improve short channel effects and reduce source/drain and extension resistance without increase of capacitance. Materials for the discontinuous film may also be chosen to impose stress on the transistor channel from within the substrate or layer and provide increased levels of such stress to increase carrier mobility. Carrier mobility may be increased in combination with other meritorious effects.
摘要翻译：场效应晶体管中的沟道深度由包括在半导体材料的层或衬底内形成的不连续膜或层的层内结构限制。因此，可以以SOI或UT-SOI技术的方式控制通道深度，但是具有较便宜的衬底和更大的通道深度控制的灵活性，同时避免SOI技术的浮体效应特性。不连续膜的轮廓或横截面形状可以被控制为奥格或阶梯形状，以改善短通道效应，并且在不增加电容的情况下降低源极/漏极和延伸电阻。也可以选择用于不连续膜的材料以在衬底或层内从晶体管沟道施加应力，并提供增加的这种应力水平以增加载流子迁移率。携带者的流动性可能会与其他有利的影响相结合。

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