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1. 发明申请

US20070048882A1 Method to reduce plasma-induced charging damage 审中-公开
标题翻译：减少等离子体引起的充电损伤的方法
公开(公告)号：US20070048882A1
公开(公告)日：2007-03-01
申请号：US11366301
申请日：2006-03-01
申请人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
发明人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
IPC分类号： H01L21/00
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/67253 , H01L21/76807
摘要： In some implementations, a method is provided for inhibiting charge damage in a plasma processing chamber during a process transition from one process step to another process step, including performing a pre-transition compensation of at least one process parameter so as to inhibit charge damage from occurring during the process transition. In some implementations, a method is provided for inhibiting charge damage during a process transition from one process step to another process step, which includes changing at least one process parameter with a smooth non-linear transition. In some implementations, a method is provided which includes sequentially changing selected process parameters such that a plasma is able to stabilize after each change prior to changing a next selected process parameter.
摘要翻译：在一些实施方案中，提供了一种用于在从一个工艺步骤转移到另一个工艺步骤的过程转变期间抑制等离子体处理室中的电荷损伤的方法，包括对至少一个工艺参数执行预过渡补偿以便抑制电荷损伤在过程转换期间发生。在一些实施方案中，提供了一种用于在从一个处理步骤转移到另一个处理步骤的过程中抑制电荷损伤的方法，其包括通过平滑的非线性跃迁来改变至少一个过程参数。在一些实施方式中，提供了一种方法，其包括顺序地改变所选择的过程参数，使得在改变下一个所选择的过程参数之前等离子体能够在每次变化之后稳定。

2. 发明申请

US20070066064A1 Methods to avoid unstable plasma states during a process transition 失效
标题翻译：在过程转换过程中避免不稳定的等离子体状态的方法
公开(公告)号：US20070066064A1
公开(公告)日：2007-03-22
申请号：US11372752
申请日：2006-03-10
申请人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
发明人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
IPC分类号： H01L21/00 , G01L21/30 , H01L21/302
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/76807
摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
摘要翻译：在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。

3. 发明授权

US08048806B2 Methods to avoid unstable plasma states during a process transition 失效
标题翻译：在过程转换过程中避免不稳定的等离子体状态的方法
公开(公告)号：US08048806B2
公开(公告)日：2011-11-01
申请号：US11372752
申请日：2006-03-10
申请人： Michael C. Kutney , Daniel J. Hoffman , Gerardo A. Delgadino , Ezra R. Gold , Ashok Sinha , Xiaoye Zhao , Douglas H. Burns , Shawming Ma
发明人： Michael C. Kutney , Daniel J. Hoffman , Gerardo A. Delgadino , Ezra R. Gold , Ashok Sinha , Xiaoye Zhao , Douglas H. Burns , Shawming Ma
IPC分类号： H01L21/00 , H01L21/302 , G01L21/30
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/76807
摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
摘要翻译：在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。

4. 发明申请

US20070238305A1 PLASMA DIELECTRIC ETCH PROCESS INCLUDING EX-SITU BACKSIDE POLYMER REMOVAL FOR LOW-DIELECTRIC CONSTANT MATERIAL 失效
标题翻译：等离子体电介质蚀刻工艺，包括用于低介电常数材料的EX-SITU BACKSIDE POLMMER REMOVAL
公开(公告)号：US20070238305A1
公开(公告)日：2007-10-11
申请号：US11402074
申请日：2006-04-11
申请人： Gerardo Delgadino , Indrajit Lahiri , Teh-Tien Su , Brian Sheih , Ashok Sinha
发明人： Gerardo Delgadino , Indrajit Lahiri , Teh-Tien Su , Brian Sheih , Ashok Sinha
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/32357 , H01L21/0209
摘要： A plasma etch process for etching a porous carbon-doped silicon oxide dielectric layer using a photoresist mask is carried out first in an etch reactor by performing a fluorocarbon based etch process on the workpiece to etch exposed portions of the dielectric layer while depositing protective fluorocarbon polymer on the photoresist mask. Then, in an ashing reactor, polymer and photoresist are removed by heating the workpiece to over 100 degrees C., exposing a peripheral portion of the backside of said workpiece, and providing products from a plasma of a hydrogen process gas to reduce carbon contained in polymer and photoresist on said workpiece until the polymer has been removed from a backside of said workpiece. The process gas preferably contains both hydrogen gas and water vapor, although the primary constituent is hydrogen gas. The wafer (workpiece) backside may be exposed by extending the wafer lift pins.
摘要翻译：首先在蚀刻反应器中进行用于蚀刻使用光致抗蚀剂掩模的多孔碳掺杂氧化硅电介质层的等离子体蚀刻工艺，通过在工件上执行基于碳氟化合物的蚀刻工艺来蚀刻介电层的暴露部分，同时沉积保护性氟碳聚合物在光刻胶掩模上。然后，在灰化反应器中，通过将工件加热到超过100摄氏度，去除聚合物和光致抗蚀剂，暴露所述工件背面的周边部分，并提供来自氢处理气体的等离子体的产物，以减少包含在聚合物和光致抗蚀剂，直到聚合物已从所述工件的背面去除。处理气体优选含有氢气和水蒸汽，尽管主要成分是氢气。晶片（工件）背面可以通过延伸晶片提升销来暴露。

5. 发明申请

US20060027329A1 Multi-frequency plasma enhanced process chamber having a torroidal plasma source 审中-公开
标题翻译：具有环形等离子体源的多频等离子体增强处理室
公开(公告)号：US20060027329A1
公开(公告)日：2006-02-09
申请号：US10914947
申请日：2004-08-09
申请人： Ashok Sinha , Daniel Hoffman , John Holland
发明人： Ashok Sinha , Daniel Hoffman , John Holland
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： H01J37/32165 , H01J37/321
摘要： A method and apparatus for processing a substrate includes a reactor chamber having a chamber wall and containing a substrate support. An electrode overlies the substrate and is spaced apart from the substrate support. One or more plasma sources maintains plasma in the reactor in one or more torroidal paths using a first frequency. One or more RF power generators supply power to the electrode at a second frequency that is different from the first frequency.
摘要翻译：用于处理衬底的方法和装置包括具有室壁并包含衬底支撑件的反应室。电极覆盖在衬底上并且与衬底支撑件间隔开。一个或多个等离子体源使用第一频率在一个或多个环形路径中保持反应器中的等离子体。一个或多个RF发电机以不同于第一频率的第二频率向电极供电。

6. 发明申请

US20070017897A1 MULTI-FREQUENCY PLASMA ENHANCED PROCESS CHAMBER HAVING A TOROIDAL PLASMA SOURCE 审中-公开
标题翻译：具有等离子体等离子体源的多频等离子体增强过程室
公开(公告)号：US20070017897A1
公开(公告)日：2007-01-25
申请号：US11536014
申请日：2006-09-28
申请人： Ashok Sinha , Daniel Hoffman , John Holland
发明人： Ashok Sinha , Daniel Hoffman , John Holland
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01J37/32165 , H01J37/321
摘要： A method and apparatus for processing a substrate includes a reactor chamber having a chamber wall and containing a substrate support. An electrode overlies the substrate and is spaced apart from the substrate support. One or more plasma sources maintains plasma in the reactor in one or more toroidal paths using a first frequency. One or more RF power generators supply power to the electrode at a second frequency that is different from the first frequency.
摘要翻译：用于处理衬底的方法和装置包括具有室壁并包含衬底支撑件的反应室。电极覆盖在衬底上并且与衬底支撑件间隔开。一个或多个等离子体源使用第一频率在一个或多个环形路径中维持反应器中的等离子体。一个或多个RF发电机以不同于第一频率的第二频率向电极供电。

7. 发明授权

US07709385B2 Method for depositing tungsten-containing layers by vapor deposition techniques 失效
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07709385B2
公开(公告)日：2010-05-04
申请号：US12335976
申请日：2008-12-16
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

8. 发明申请

US20090035865A1 MOISTURE SENSOR 审中-公开
标题翻译：水分传感器
公开(公告)号：US20090035865A1
公开(公告)日：2009-02-05
申请号：US11832130
申请日：2007-08-01
申请人： Colette Pamela DeMoor , Ashok Sinha , Ian Gibbons
发明人： Colette Pamela DeMoor , Ashok Sinha , Ian Gibbons
IPC分类号： G01N33/18 , B01J19/00 , G01N21/78
CPC分类号： G01N31/222 , G01N21/81
摘要： A moisture sensor is disclosed which measures cumulative exposure to moisture. The moisture sensor comprises a matrix having a hygroscopic material, a first reagent, and a second reagent which interact only in the presence of water to produce a detectable, irreversible change in the matrix to provide a moisture indication. The moisture sensor may be incorporated with a disposable diagnostic device, whereby a method for preventing the use of such a disposable diagnostic device if exposed to excessive cumulative humidity is also disclosed.
摘要翻译：公开了一种测量累积暴露于湿气的湿度传感器。水分传感器包括具有吸湿材料，第一试剂和第二试剂的基质，其仅在水存在下相互作用以在基质中产生可检测的不可逆变化以提供湿气指示。湿度传感器可以与一次性诊断装置并入，由此也公开了如果暴露于过度累积湿度时防止使用这种一次性诊断装置的方法。

9. 发明授权

US07220673B2 Method for depositing tungsten-containing layers by vapor deposition techniques 有权
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07220673B2
公开(公告)日：2007-05-22
申请号：US11461909
申请日：2006-08-02
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
摘要翻译：在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括通过在原子层中将衬底顺序地暴露于处理室内的含硼气体和含钨气体来形成钨成核层通过在化学气相沉积工艺期间将衬底暴露于另一处理室内含有含钨气体和反应性前体气体的处理气体，在钨成核层上形成钨体层。在一个实例中，钨成核层沉积在介电材料如氧化硅上。在另一个实例中，钨成核层沉积在诸如钛或氮化钛的阻挡材料上。其他实例提供了钨成核层和钨本体层沉积在相同的处理室中。

10. 发明申请

US20060035025A1 Activated species generator for rapid cycle deposition processes 审中-公开
标题翻译：用于快速循环沉积工艺的活性物种发生器
公开(公告)号：US20060035025A1
公开(公告)日：2006-02-16
申请号：US11146295
申请日：2005-06-06
申请人： Donald Verplancken , Ashok Sinha
发明人： Donald Verplancken , Ashok Sinha
IPC分类号： C23C14/00 , C23C16/00
CPC分类号： C23C16/45542 , C23C16/452 , H01J37/32357
摘要： A method for providing activated species for a cyclical deposition process is provided herein. In one aspect, the method includes delivering a gas to be activated into a plasma generator, activating the gas to create a volume of reactive species, delivering a fraction of the reactive species into a processing region to react within a substrate therein, and maintaining at least a portion of the gas remaining in the plasma generator in an activated state after delivering the fraction of the gas into the process region. The plasma generator may include a high density plasma (HDP) generator, a microwave generator, a radio-frequency (RF) generator, an inductive-coupled plasma (ICP) generator, a capacitively coupled generator, or combinations thereof.
摘要翻译：本文提供了用于提供用于循环沉积工艺的活化物质的方法。在一个方面，所述方法包括将待激活的气体输送到等离子体发生器中，激活气体以产生一定体积的反应物质，将一部分反应性物质输送到处理区域中以在其内部的基底内反应并维持在在将一部分气体输送到处理区域中之后，剩余在等离子体发生器中的气体的至少一部分处于活化状态。等离子体发生器可以包括高密度等离子体（HDP）发生器，微波发生器，射频（RF）发生器，感应耦合等离子体（ICP）发生器，电容耦合发生器或其组合。

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