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1. 发明申请

US20070066064A1 Methods to avoid unstable plasma states during a process transition 失效
标题翻译：在过程转换过程中避免不稳定的等离子体状态的方法
公开(公告)号：US20070066064A1
公开(公告)日：2007-03-22
申请号：US11372752
申请日：2006-03-10
申请人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
发明人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
IPC分类号： H01L21/00 , G01L21/30 , H01L21/302
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/76807
摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
摘要翻译：在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。

2. 发明申请

US20070048882A1 Method to reduce plasma-induced charging damage 审中-公开
标题翻译：减少等离子体引起的充电损伤的方法
公开(公告)号：US20070048882A1
公开(公告)日：2007-03-01
申请号：US11366301
申请日：2006-03-01
申请人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
发明人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
IPC分类号： H01L21/00
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/67253 , H01L21/76807
摘要： In some implementations, a method is provided for inhibiting charge damage in a plasma processing chamber during a process transition from one process step to another process step, including performing a pre-transition compensation of at least one process parameter so as to inhibit charge damage from occurring during the process transition. In some implementations, a method is provided for inhibiting charge damage during a process transition from one process step to another process step, which includes changing at least one process parameter with a smooth non-linear transition. In some implementations, a method is provided which includes sequentially changing selected process parameters such that a plasma is able to stabilize after each change prior to changing a next selected process parameter.
摘要翻译：在一些实施方案中，提供了一种用于在从一个工艺步骤转移到另一个工艺步骤的过程转变期间抑制等离子体处理室中的电荷损伤的方法，包括对至少一个工艺参数执行预过渡补偿以便抑制电荷损伤在过程转换期间发生。在一些实施方案中，提供了一种用于在从一个处理步骤转移到另一个处理步骤的过程中抑制电荷损伤的方法，其包括通过平滑的非线性跃迁来改变至少一个过程参数。在一些实施方式中，提供了一种方法，其包括顺序地改变所选择的过程参数，使得在改变下一个所选择的过程参数之前等离子体能够在每次变化之后稳定。

3. 发明授权

US08048806B2 Methods to avoid unstable plasma states during a process transition 失效
标题翻译：在过程转换过程中避免不稳定的等离子体状态的方法
公开(公告)号：US08048806B2
公开(公告)日：2011-11-01
申请号：US11372752
申请日：2006-03-10
申请人： Michael C. Kutney , Daniel J. Hoffman , Gerardo A. Delgadino , Ezra R. Gold , Ashok Sinha , Xiaoye Zhao , Douglas H. Burns , Shawming Ma
发明人： Michael C. Kutney , Daniel J. Hoffman , Gerardo A. Delgadino , Ezra R. Gold , Ashok Sinha , Xiaoye Zhao , Douglas H. Burns , Shawming Ma
IPC分类号： H01L21/00 , H01L21/302 , G01L21/30
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/76807
摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
摘要翻译：在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。

4. 发明申请

US20070254483A1 Plasma etch process using polymerizing etch gases and an inert diluent gas in independent gas injection zones to improve etch profile or etch rate uniformity 审中-公开
标题翻译：在独立气体注入区域中使用聚合蚀刻气体和惰性稀释气体的等离子体蚀刻工艺，以改善蚀刻轮廓或蚀刻速率均匀性
公开(公告)号：US20070254483A1
公开(公告)日：2007-11-01
申请号：US11413900
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
IPC分类号： C23F1/00 , H01L21/302
CPC分类号： H01L21/31116 , H01J37/3244 , H01J37/32449 , H01J2237/334 , H01L21/67069
摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through at least one of plural concentric gas injection zones of the ceiling electrode and injecting an inert diluent gas through at least a selected one of the plural gas injection zones of the ceiling electrode and apportioning respective flow rates of the diluent gas through respective ones of the gas injection zones in accordance with the distribution among corresponding concentric zones of the workpiece of etch profile tapering. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.
摘要翻译：用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。该方法包括将聚合蚀刻工艺气体注入到天花板电极的多个同心气体注入区域中的至少一个中，并且通过天花板电极的多个气体注入区域中的至少一个选择惰性稀释气体并分配各自的流量根据蚀刻轮廓渐缩的工件的相应同心区域之间的分布，通过相应的气体注入区域的稀释气体。该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物通过在反应器中产生等离子体而在工件上。

5. 发明申请

US20070251918A1 Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation 有权
标题翻译：在具有时间调制的不同径向气体注入区域中使用不同蚀刻和聚合物沉积速率的聚合蚀刻气体的等离子体蚀刻工艺
公开(公告)号：US20070251918A1
公开(公告)日：2007-11-01
申请号：US11414017
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
IPC分类号： C03C25/68 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449
摘要： A plasma etch process for etching a workpiece is carried out in a plasma reactor having a ceiling electrode overlying the process region with plural concentric gas injection zones. The process includes injecting process gases with different compositions of chemical species through different ones of the gas injection zones to establish a distribution of chemical species among the plural gas injection zones. The process gases include fluorine-rich polymerizing etch gases that promote a high etch rate, carbon-rich polymerizing etch gases that promote a high polymer deposition rate, polymer management gases (e.g., oxygen or nitrogen) that retard polymer deposition rate and an inert diluent gas that reduces etch profile tapering. The method further includes distributing the processes gases among the plural gas injection zone so that (a) the fluorine-rich etch process gases have the highest flow rate over zones of the workpiece tending to have the lowest etch rate, (b) the carbon-rich etch process gases have the highest flow rate over zones of the workpiece tending to have the highest etch rate, (c) the polymer management gases have the highest flow rate over zones of the workpiece tending to have the highest tendency for etch stop, (d) the inert diluent gas has the highest flow rate over zones of the workpiece tending to have the greatest etch profile tapering.
摘要翻译：用于蚀刻工件的等离子体蚀刻工艺在具有覆盖具有多个同心气体注入区的工艺区域的顶板电极的等离子体反应器中进行。该方法包括通过不同的气体注入区注入具有不同组成的化学物质的工艺气体，以建立多个气体注入区域之间的化学物质分布。工艺气体包括富含氟的聚合蚀刻气体，其促进高蚀刻速率，促进高聚合物沉积速率的富碳聚合蚀刻气体，阻止聚合物沉积速率的聚合物管理气体（例如氧气或氮气）和惰性稀释剂减少蚀刻轮廓渐缩的气体。该方法还包括在多个气体注入区域之间分配工艺气体，使得（a）富氟蚀刻工艺气体在工件区域上具有最高的流速，倾向于具有最低的蚀刻速率，（b）碳 - 丰富的蚀刻工艺气体在工件区域上具有最高的流速，倾向于具有最高的蚀刻速率，（c）聚合物管理气体在工件区域上具有最高的流速，倾向于具有蚀刻停止的最高趋势（ d）惰性稀释气体在工件区域上具有最高的流速，倾向于具有最大的蚀刻轮廓渐缩。

6. 发明申请

US20070251917A1 Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content 有权
标题翻译：使用在晶片表面上聚合蚀刻气体的等离子体蚀刻工艺，以及在独立供气气体区域中管理或控制气体的另外的聚合物，其中气体含量随时间和空间调制
公开(公告)号：US20070251917A1
公开(公告)日：2007-11-01
申请号：US11414015
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
IPC分类号： C03C25/68 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449 , H01J2237/3347
摘要： A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck. The process further includes slowing the deposition rate of the polymer, minimizing etch stop and/or increasing the etch rate in a region of the workpiece typically the center by injecting oxygen or nitrogen and/or high-fluorine containing gas through gas injection orifice in the corresponding region of the ceiling electrode, and adjusting the flow rate of the oxygen or nitrogen and/or high-fluorine containing gas through the gas injection orifice to minimize the difference between profiles and etch depths at the workpiece center and the workpiece periphery.
摘要翻译：等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔，以及支撑工件的静电卡盘。该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的环形区域，以及通过围绕工件边缘的泵送环从反应器排出气体。通过在蚀刻工艺气体中衍生出蚀刻物质，同时将从蚀刻工艺气体衍生的聚合物沉积到工件上，通过在反应器中产生等离子体，通过施加VHF源功率和/或HF来在电介质膜中蚀刻高纵横比开口和/或LF偏压电力到天花板和/或静电卡盘上的电极。该方法进一步包括减缓聚合物的沉积速率，通过在气体喷射孔中注入氧或氮和/或高含氟气体，在工件的区域中通常为中心使蚀刻停止和/或增加蚀刻速率最小化并且通过气体注入孔调节氧气或氮气和/或高含氟气体的流量，以最小化工件中心和工件外围处的轮廓和蚀刻深度之间的差异。

7. 发明申请

US20070254486A1 Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones 有权
标题翻译：在独立的内部和外部气体注入区域中分别进料碳贫和富碳聚合蚀刻气体的等离子体蚀刻工艺
公开(公告)号：US20070254486A1
公开(公告)日：2007-11-01
申请号：US11414027
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
IPC分类号： H01L21/461 , C03C25/68
CPC分类号： H01L21/76802 , H01J37/32091 , H01J37/3244 , H01J37/3266 , H01J37/32706 , H01J2237/3347 , H01L21/31116
摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.
摘要翻译：用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。该方法包括将第一聚合蚀刻工艺气体通过天花板电极中的多个同心气体注入区的径向向内的一个注入，并且通过天花板电极中的多个同心气体注入区中的径向向外的一个喷射第二聚合蚀刻工艺气体，第一和第二工艺气体的组成具有彼此不同的第一和第二碳 - 氟比率。该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物通过在反应器中产生等离子体而在工件上。

8. 发明申请

US20070251642A1 Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone 有权
标题翻译：具有多个气体注入区域的等离子体反应器装置，其具有用于每个区域的时变单独的可配置气体组成
公开(公告)号：US20070251642A1
公开(公告)日：2007-11-01
申请号：US11414026
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/3065 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01L21/31116
摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.
摘要翻译：用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。反应器还包括含有不同气体种类的多个气体源，多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。反应器还包括控制所述阀阵列的控制器，并被编程为随时间改变通过所述入口的气体的流速。反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。在一个优选的实施方案中，多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。它们还包括氧气或氮气供应和稀释气体供应。控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。

9. 发明申请

US20070020944A1 SELECTIVE ETCH PROCESS OF A SACRIFICIAL LIGHT ABSORBING MATERIAL (SLAM) OVER A DIELECTRIC MATERIAL 失效
标题翻译：绝缘材料（SLAM）的选择性蚀刻工艺
公开(公告)号：US20070020944A1
公开(公告)日：2007-01-25
申请号：US11535551
申请日：2006-09-27
申请人： Hee Yeop Chae , Jeremiah Pender , Gerardo Delgadino , Xiaoye Zhao , Yan Ye
发明人： Hee Yeop Chae , Jeremiah Pender , Gerardo Delgadino , Xiaoye Zhao , Yan Ye
IPC分类号： C23F1/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76808 , H01L21/31116
摘要： A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.
摘要翻译：使用等离子体蚀刻室中的气体混合物的等离子体在衬底上在介电材料（例如碳掺杂氧化物）上选择性地蚀刻牺牲光吸收材料（SLAM）的工艺。气体混合物包括氢氟烃气体，任选的含氢气体，任选的富氟碳氟化合物气体，氮气，氧气和惰性气体。该方法可以提供大于10:1的介电材料蚀刻选择比的SLAM。

10. 发明申请

US20050029229A1 Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material 失效
标题翻译：在介电材料上的牺牲光吸收材料（SLAM）的选择性蚀刻工艺
公开(公告)号：US20050029229A1
公开(公告)日：2005-02-10
申请号：US10706902
申请日：2003-11-12
申请人： Hee Chae , Jeremiah Pender , Gerardo Delgadino , Xiaoye Zhao , Yan Ye
发明人： Hee Chae , Jeremiah Pender , Gerardo Delgadino , Xiaoye Zhao , Yan Ye
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/311 , H01L21/768
CPC分类号： H01L21/76808 , H01L21/31116
摘要： A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocargon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.
摘要翻译：使用等离子体蚀刻室中的气体混合物的等离子体在衬底上在介电材料（例如碳掺杂氧化物）上选择性地蚀刻牺牲光吸收材料（SLAM）的工艺。气体混合物包括氢氟烃气体，任选的含氢气体，任选的富含氟的氟碳酸气体，氮气，氧气和惰性气体。该方法可以提供大于10:1的介电材料蚀刻选择比的SLAM。

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