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1. 发明授权

US5810989A Photoelectric synthesis of DNA or protein probe arrays 失效
标题翻译： DNA或蛋白质探针阵列的光电合成
公开(公告)号：US5810989A
公开(公告)日：1998-09-22
申请号：US923814
申请日：1997-09-04
申请人： Michael Krihak , Chan-Long Shieh , Hsing-Chung Lee
发明人： Michael Krihak , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： B01J19/00 , C07B61/00 , C07H21/00 , C07K1/04 , C40B40/06 , C40B50/14 , C40B60/14 , C25D5/00 , C25B3/00 , C25D5/02
CPC分类号： B82Y30/00 , B01J19/0046 , C07H21/00 , C07K1/045 , C07K1/047 , B01J2219/00432 , B01J2219/00527 , B01J2219/00529 , B01J2219/00585 , B01J2219/0059 , B01J2219/00596 , B01J2219/00605 , B01J2219/00608 , B01J2219/00614 , B01J2219/00659 , B01J2219/00675 , B01J2219/00711 , B01J2219/00713 , B01J2219/00722 , C07B2200/11 , C40B40/06 , C40B50/14 , C40B60/14
摘要： A method of photoelectro-synthesizing probe arrays including the steps of providing a photoconductive layer of material having a layer of electrically conductive material on a first surface thereof and a solution of a plurality of a first oligonucleotide modified monomer positioned in electrical contact with an opposing second surface thereof such that a potential is connected therebetween. A beam of light is directed through a portion of the photoconductive layer of material to complete an electrical circuit between the layer of electrically conductive material and the solution through the portion of the photoconductive layer, whereby the monomers in the solution are electropolymerized on a surface area which is coupled into the electrical circuit by the beam of light.
摘要翻译：一种光电合成探针阵列的方法，包括以下步骤：在其第一表面上提供具有导电材料层的材料的光电导层和多个第一寡核苷酸改性单体的溶液，所述第一寡核苷酸改性单体与相对的第二表面，使得它们之间连接有电位。光束被引导通过材料的光电导层的一部分，以完成在导电材料层与溶液之间的光电导层的部分之间的电路，由此溶液中的单体在表面积上电聚合其通过光束耦合到电路中。

2. 发明申请

US20110062431A1 LASER ANNEALING OF METAL OXIDE SEMICONDUCTOR ON TEMPERATURE SENSITIVE SUBSTRATE FORMATIONS 有权
标题翻译：金属氧化物半导体在温度敏感基板上的激光退火
公开(公告)号：US20110062431A1
公开(公告)日：2011-03-17
申请号：US12874145
申请日：2010-09-01
申请人： Chan-Long Shieh , Hsing-Chung Lee
发明人： Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L21/268 , H01L29/66969 , H01L29/78603 , H01L29/78693
摘要： A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a surface of the substrate formation. A metal oxide semiconductor device is formed on the spacer layer, the device includes at least a layer of amorphous metal oxide semiconductor material, an interface of the amorphous metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of amorphous metal oxide semiconductor material and the interface. The method then includes the step of at least partially annealing the layer of metal oxide semiconductor material by heating the adjacent gate metal layer with pulses of infra red radiation to improve the mobility and operating stability of the amorphous metal oxide semiconductor material while retaining at least the amorphous metal oxide semiconductor material adjacent the gate metal layer amorphous.
摘要翻译：在温度敏感的基板形成上退火金属氧化物的方法包括以下步骤：在基板结构的表面上形成温度敏感的基板并形成间隔层。金属氧化物半导体器件形成在间隔层上，该器件至少包括一层非晶金属氧化物半导体材料，非晶金属氧化物层与电介质层的界面，以及与非晶金属层相邻的栅极金属层氧化物半导体材料和界面。该方法然后包括通过用红外辐射脉冲加热相邻栅极金属层来至少部分地退火金属氧化物半导体材料层的步骤，以提高非晶金属氧化物半导体材料的迁移率和操作稳定性，同时至少保留非晶态金属氧化物半导体材料与栅极金属层相邻无定形。

3. 发明申请

US20080169464A1 Metal-insulator- metal (MIM) devices and their methods of fabrication 有权
标题翻译：金属 - 绝缘体 - 金属（MIM）器件及其制造方法
公开(公告)号：US20080169464A1
公开(公告)日：2008-07-17
申请号：US11983205
申请日：2007-11-06
申请人： Xiong Gong , Kaixia Yang , Gang Yu , Boo Jorgen Lars Nilsson , Chan-Long Shieh , Hsing-Chung Lee , Fatt Foong
发明人： Xiong Gong , Kaixia Yang , Gang Yu , Boo Jorgen Lars Nilsson , Chan-Long Shieh , Hsing-Chung Lee , Fatt Foong
IPC分类号： H01L51/52 , G02F1/135 , H01L51/56
CPC分类号： G02F1/1365 , G02F1/167 , H01G11/48 , H01G11/56 , H01L45/00 , Y02E60/13 , Y10S438/957
摘要： Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.
摘要翻译：提供具有通过液相处理方法形成的至少一个电极的MIM型的两端开关装置用于有源矩阵背板应用; 更具体地说，将具有对称电流 - 电压特性的MIM器件应用于LCD有源矩阵背板应用，并且将具有不对称电流 - 电压特性的MIM器件应用于电泳显示器（EPD）和旋转元件显示器的有源矩阵背板实施。特别地，底部金属，金属氧化物绝缘体和可溶液加工的顶部导电层的组合可实现灵活显示器的高生产率，卷对卷过程。

4. 发明授权

US5780321A LED display packaging with substrate removal and method of fabrication 失效
标题翻译： LED显示包装与基板去除及其制造方法
公开(公告)号：US5780321A
公开(公告)日：1998-07-14
申请号：US699263
申请日：1996-08-19
申请人： Chan-Long Shieh , Hsing-Chung Lee , Paige M. Holm
发明人： Chan-Long Shieh , Hsing-Chung Lee , Paige M. Holm
IPC分类号： H01L21/60 , G09F9/33 , H01L25/16 , H01L27/15 , H01L33/00 , H01L21/00
CPC分类号： H01L27/156 , H01L25/162 , H01L25/167 , H01L2924/0002
摘要： A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a light emitting diode array on a substrate, having row and column connection pads routed to display connection pads positioned on an uppermost surface of the LED array device, a separate silicon driver device having connection pads routed to an uppermost surface, positioned to cooperatively meet those of the LED device when properly registered, the LED device flip chip bump bonded to the driver device using standard C5 DCA, an underfill layer positioned between the space defined by the LED device and the driver device. The LED display and driver device package subsequently having selectively removed the substrate onto which the LED array was initially formed. The light emitted from the LED display device, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the LED device.
摘要翻译：一种发光二极管显示器封装以及制造在衬底上包括发光二极管阵列的发光二极管（LED）显示器封装的方法，所述发光二极管阵列具有布置成显示位于所述LED阵列器件的最上表面上的连接焊盘的行和列连接焊盘，具有连接到最上表面的连接焊盘的单独的硅驱动器装置，其被定位成在正确地注册时协同地与LED器件的那些耦合，使用标准C5 DCA将LED装置倒装芯片凸块结合到驱动器装置，底部填充层位于 LED设备和驱动器设备定义的空间。 LED显示器和驱动器件封装件随后选择性地去除了最初形成LED阵列的衬底。从LED显示装置发射的光通过LED装置的剩余的铟 - 镓 - 铝 - 磷化物（InGaAlP）外延层发射。

5. 发明授权

US5641611A Method of fabricating organic LED matrices 失效
标题翻译：制造有机LED矩阵的方法
公开(公告)号：US5641611A
公开(公告)日：1997-06-24
申请号：US517223
申请日：1995-08-21
申请人： Chan-Long Shieh , Hsing-Chung Lee
发明人： Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： G09F9/33 , H01L51/40 , H01L51/50 , B05D1/32 , G03C5/56
CPC分类号： H01L51/0008 , H01L51/0011 , H01L51/5012
摘要： Items of material are patterned on a substrate by forming a layer of photoresist on the substrate and a layer of metal on the photoresist. The photoresist is patterned to define an opening exposing a portion of the substrate and the metal is patterned to define an aperture smaller than the opening so as to divide the exposed surface of the substrate into shadow areas and a non-shadow area. A first material system is evaporated generally perpendicular to the aperture to form a first organic light emitting diode on the surface of the substrate in the non-shadow area and second and third material systems are evaporated at angles to the aperture to form second and third organic light emitting diodes in the shadow areas. Passivation material is evaporated perpendicularly onto the first diode and at the angle onto the second diode.
摘要翻译：通过在衬底上形成光致抗蚀剂层和光致抗蚀剂上的金属层，在衬底上图案化材料。光致抗蚀剂被图案化以限定露出衬底的一部分的开口，并且图案化金属以限定小于开口的孔，以将衬底的暴露表面划分为阴影区域和非阴影区域。第一材料系统通常垂直于孔径蒸发以在非阴影区域中在衬底的表面上形成第一有机发光二极管，并且第二和第三材料系统与孔成角度地蒸发以形成第二和第三有机阴影区域的发光二极管。钝化材料垂直地蒸发到第一二极管上并以一定角度蒸发到第二二极管上。

6. 发明授权

US5621225A Light emitting diode display package 失效
标题翻译：发光二极管显示封装
公开(公告)号：US5621225A
公开(公告)日：1997-04-15
申请号：US599434
申请日：1996-01-18
申请人： Chan-Long Shieh , Hsing-Chung Lee , Paige M. Holm
发明人： Chan-Long Shieh , Hsing-Chung Lee , Paige M. Holm
IPC分类号： H01L21/60 , G09F9/33 , H01L25/16 , H01L27/15 , H01L33/00 , H01L23/48
CPC分类号： H01L27/156 , H01L25/162 , H01L25/167 , H01L2924/0002
摘要： A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a light emitting diode array on a substrate, having row and column connection pads routed to display connection pads positioned on an uppermost surface of the LED array device, a separate silicon driver device having connection pads routed to an uppermost surface, positioned to cooperatively meet those of the LED device when properly registered, the LED device flip chip bump bonded to the driver device using standard C5 DCA, an underfill layer positioned between the space defined by the LED device and the driver device. The LED display and driver device package subsequently having selectively removed the substrate onto which the LED array was initially formed. The light emitted from the LED display device, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the LED device.
摘要翻译：一种发光二极管显示器封装以及制造在衬底上包括发光二极管阵列的发光二极管（LED）显示器封装的方法，所述发光二极管阵列具有布置成显示位于所述LED阵列器件的最上表面上的连接焊盘的行和列连接焊盘，具有连接到最上表面的连接焊盘的单独的硅驱动器器件，其被定位成在正确地注册时协同地与LED器件的LED器件匹配，使用标准C5 DCA将LED器件倒装芯片凸块结合到驱动器器件，底部填充层位于 LED设备和驱动器设备定义的空间。 LED显示器和驱动器件封装件随后选择性地去除了最初形成LED阵列的衬底。从LED显示装置发射的光通过LED装置的剩余的铟 - 镓 - 铝 - 磷化物（InGaAlP）外延层发射。

7. 发明授权

US5478774A Method of fabricating patterned-mirror VCSELs using selective growth 失效
标题翻译：使用选择性生长制造图案镜VCSEL的方法
公开(公告)号：US5478774A
公开(公告)日：1995-12-26
申请号：US261276
申请日：1994-06-15
申请人： Donald E. Ackley , Piotr Grodzinski , Michael S. Lebby , Hsing-Chung Lee , Chan-Long Shieh
发明人： Donald E. Ackley , Piotr Grodzinski , Michael S. Lebby , Hsing-Chung Lee , Chan-Long Shieh
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S5/22 , H01L21/20
CPC分类号： H01S5/18308 , H01S5/18305 , H01S5/18327 , H01S5/2214 , Y10S438/969
摘要： A method of fabricating VCSELs including the steps of epitaxially growing a first mirror stack of a first conductivity type, an active region on the first mirror stack, and a first portion of a second mirror stack of a second conductivity type on the active region. A dielectric layer is then formed on the first portion of the second mirror stack, patterned to define an operating region and a remaining portion of the second mirror stack is epitaxially grown on the first portion to form a complete second mirror stack. Portions of the second mirror stack overlying the dielectric layer are polycrystalline in formation and substantially limit the remaining portion of the second mirror stack to the operating region. The polycrystalline layers can then be removed and electrical contacts formed.
摘要翻译：一种制造VCSEL的方法，包括以下步骤：在有源区上外延生长第一导电类型的第一反射镜叠层，第一反射镜叠层上的有源区和第二导电类型的第二反射镜叠层的第一部分。然后在第二反射镜叠层的第一部分上形成电介质层，其被图案化以限定操作区域，并且在第一部分上外延生长第二反射镜叠层的剩余部分以形成完整的第二反射镜叠层。覆盖在介电层上的第二反射镜叠层的部分在形成时是多晶的，并且基本上将第二反射镜叠层的剩余部分限制到操作区域。然后可以去除多晶层并形成电接触。

8. 发明申请

US20080174519A1 RECONFIGURABLE COLOR SIGNAGE USING BISTABLE LIGHT VALVE 审中-公开
标题翻译：可重复使用双色阀的颜色信号
公开(公告)号：US20080174519A1
公开(公告)日：2008-07-24
申请号：US11625904
申请日：2007-01-23
申请人： Chan-Long Shieh , Hsing-Chung Lee
发明人： Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： G09G3/20
CPC分类号： G09G3/344 , G02F1/157 , G02F1/167 , G09G2300/0426 , G09G2300/08
摘要： Reconfigurable color signage includes an array of light valves each having memory. An active matrix including a plurality of conductive select and data lines is positioned on one side of the array. Each light valve is electrically coupled to be separately addressable by a unique combination of select and data line. The active matrix has a write mode in which signals are supplied to each light valve to provide a selected light transmittance and a display mode in which the memory of each light valve retains the selected transmittance after the signals of the write mode have been removed. A backlight is positioned to direct light in a light path through the array and a color filter is positioned in the light path to define a plurality of pixels, including one red, green, and blue filter for each pixel, and each positioned to be associated with a separate light valve.
摘要翻译：可重构颜色标志包括各自具有记忆的光阀阵列。包括多个导电选择和数据线的有源矩阵位于阵列的一侧。每个光阀电耦合以通过选择和数据线的独特组合单独寻址。有源矩阵具有写入模式，其中向每个光阀提供信号以提供所选择的透光率和显示模式，其中每个光阀的存储器在写入模式的信号已被去除之后保持所选择的透射率。背光被定位成将光引导到穿过阵列的光路中，并且滤光器被定位在光路中以限定多个像素，每个像素包括用于每个像素的一个红色，绿色和蓝色滤光器，并且每个像素定位成相关联配有独立的光阀。

9. 发明授权

US06940885B1 Systems, methods, and apparatuses for optically pumped vertical cavity surface emitting laser devices 失效
标题翻译：用于光泵浦垂直腔表面发射激光器件的系统，方法和装置
公开(公告)号：US06940885B1
公开(公告)日：2005-09-06
申请号：US10231592
申请日：2002-08-30
申请人： Julian Cheng , Chan-Long Shieh , M. V. Ramana Murty , Hsing-Chung Lee
发明人： Julian Cheng , Chan-Long Shieh , M. V. Ramana Murty , Hsing-Chung Lee
IPC分类号： H01S5/183 , H01S5/02 , H01S5/026 , H01S5/04 , H01S5/06 , H01S5/062 , H01S5/18 , H01S5/00 , H01S3/094
CPC分类号： H01S5/041 , H01S5/0215 , H01S5/0216 , H01S5/026 , H01S5/0265 , H01S5/0608 , H01S5/06216 , H01S5/06226 , H01S5/1085 , H01S5/18 , H01S5/18311
摘要： Monolithic integrated vertical-cavity surface-emitting laser devices are disclosed including an edge-emitting semiconductor pump laser (PL), an optically-pumped vertical-cavity surface-emitting laser (VCSEL), and a means for deflecting and shaping the output beam of the pump laser to optically excite the VCSEL. The optically-pumped VCSEL structure may be adapted to include a resonant cavity with multiple fixed wavelengths, or a resonance cavity whose wavelength is continuously tunable. Wafer level manufacturing techniques are also disclosed.
摘要翻译：公开了包括边缘发射半导体泵浦激光器（PL），光泵浦垂直腔表面发射激光器（VCSEL）的单片集成垂直腔表面发射激光器件，以及用于偏转和成形输出光束泵激光器来激发VCSEL。光泵浦VCSEL结构可以适于包括具有多个固定波长的谐振腔，或者其波长是连续可调谐的谐振腔。还披露了晶片级制造技术。

10. 发明授权

US06489175B1 Electrically pumped long-wavelength VCSEL and methods of fabrication 失效
标题翻译：电泵浦长波长VCSEL和制造方法
公开(公告)号：US06489175B1
公开(公告)日：2002-12-03
申请号：US10026846
申请日：2001-12-18
申请人： Wenbin Jiang , Julian Cheng , Chan-Long Shieh , Hsing-Chung Lee
发明人： Wenbin Jiang , Julian Cheng , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01L21/02395 , H01L21/02433 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/0262 , H01S5/18313 , H01S5/32366 , H01S5/34306 , H01S5/34346 , H01S2304/02 , H01S2304/04
摘要： A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer is positioned on the first DBR and an active region is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR is epitaxially grown on the second cladding layer wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen (N) incorporation. The DBR's are grown using MOCVD to improve the electrical performance.
摘要翻译：一种制造垂直腔表面发射激光器的方法，包括以下步骤：外延生长位于衬底上的第一DBR，其中使用MOCVD外延生长第一DBR。基板在偏轴结晶方向取向，这提高了辐射效率。第一覆层位于第一DBR上，并且在第一覆层上外延生长有源区，其中使用等离子体辅助MBE外延生长有源区。在第二覆层上外延生长第二DBR，其中使用MOCVD外延生长第二DBR。使用等离子体辅助MBE外延生长活性区域以增加氮（N）掺入的摩尔分数。使用MOCVD生长DBR以提高电气性能。

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