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1. 发明申请

US20050063100A1 Magnetic sensor with adjustable electrical dimensions 有权
标题翻译：具有可调节电气尺寸的磁性传感器
公开(公告)号：US20050063100A1
公开(公告)日：2005-03-24
申请号：US10668437
申请日：2003-09-23
申请人： Michael Kautzky , David Larson , Bradley Miller , Erick Singleton , Dimitar Dimitrov , Eric Granstrom , Song Xue
发明人： Michael Kautzky , David Larson , Bradley Miller , Erick Singleton , Dimitar Dimitrov , Eric Granstrom , Song Xue
IPC分类号： G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： G11B5/3903 , G11B5/3909 , G11B2005/0018
摘要： A magnetic sensor having adjustable electrical dimensions, such as electrical read width and electrical stripe height, is disclosed. The magnetic sensor includes a sensor stack with one or more bias electrodes positioned with respect to the sensor stack. The electrical width or electrical stripe height of the sensor stack is a function of a voltage applied to the bias electrodes. The electric field produced by the bias electrodes alters the electrical profile of the magnetoresistive device.
摘要翻译：公开了一种具有可调整的电气尺寸的磁传感器，例如电读宽度和电条高度。磁传感器包括传感器堆叠，其具有相对于传感器堆叠定位的一个或多个偏置电极。传感器堆叠的电气宽度或电气条纹高度是施加到偏置电极的电压的函数。由偏置电极产生的电场改变磁阻器件的电气轮廓。

2. 发明申请

US20090290408A1 RECONFIGURABLE MAGNETIC LOGIC DEVICE USING SPIN TORQUE 有权
标题翻译：使用旋转扭矩的可重新配置的磁性逻辑器件
公开(公告)号：US20090290408A1
公开(公告)日：2009-11-26
申请号：US12126014
申请日：2008-05-23
申请人： Xiaohua Lou , Dimitar Dimitrov , Song Xue
发明人： Xiaohua Lou , Dimitar Dimitrov , Song Xue
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C11/1675 , G11C11/161
摘要： Spin torque magnetic logic devices that function as memory devices and that can be reconfigured or reprogrammed as desired. In some embodiments, the logic device is a single magnetic element, having a pinned layer, a free layer, and a barrier layer therebetween, or in other embodiments, the logic device has two magnetic elements in series. Two input currents can be applied through the element to configure or program the element. In use, logic input data, such as current, is passed through the programmed element, defining the resistance across the element and the resulting logic output. The magnetic logic device can be used for an all-function-in-one magnetic chip.
摘要翻译：用作存储器件并可根据需要重新配置或重新编程的旋转扭矩磁逻辑器件。在一些实施例中，逻辑器件是单个磁性元件，其中具有钉扎层，自由层和阻挡层，或者在其它实施例中，逻辑器件具有串联的两个磁性元件。可以通过元件施加两个输入电流来配置或编程元件。在使用中，逻辑输入数据（如电流）通过编程元件传递，定义元件上的电阻和由此产生的逻辑输出。磁性逻辑器件可用于一体式的全功能磁芯片。

3. 发明申请

US20110069536A1 RECONFIGURABLE MAGNETIC LOGIC DEVICE USING SPIN TORQUE 有权
标题翻译：使用旋转扭矩的可重新配置的磁性逻辑器件
公开(公告)号：US20110069536A1
公开(公告)日：2011-03-24
申请号：US12956487
申请日：2010-11-30
申请人： Xiaohua Lou , Dimitar Dimitrov , Song Xue
发明人： Xiaohua Lou , Dimitar Dimitrov , Song Xue
IPC分类号： G11C11/16 , H03K19/168 , H01L29/82
CPC分类号： G11C11/1675 , G11C11/161
摘要： Spin torque magnetic logic devices that function as memory devices and that can be reconfigured or reprogrammed as desired. In some embodiments, the logic device is a single magnetic element, having a pinned layer, a free layer, and a barrier layer therebetween, or in other embodiments, the logic device has two magnetic elements in series. Two input currents can be applied through the element to configure or program the element. In use, logic input data, such as current, is passed through the programmed element, defining the resistance across the element and the resulting logic output. The magnetic logic device can be used for an all-function-in-one magnetic chip.
摘要翻译：用作存储器件并可根据需要重新配置或重新编程的旋转扭矩磁逻辑器件。在一些实施例中，逻辑器件是单个磁性元件，其中具有钉扎层，自由层和阻挡层，或者在其它实施例中，逻辑器件具有串联的两个磁性元件。可以通过元件施加两个输入电流来配置或编程元件。在使用中，逻辑输入数据（如电流）通过编程元件传递，定义元件上的电阻和由此产生的逻辑输出。磁性逻辑器件可用于一体式的全功能磁芯片。

4. 发明申请

US20100309717A1 NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE 失效
标题翻译：具有可编程电容的非易失性多位存储器
公开(公告)号：US20100309717A1
公开(公告)日：2010-12-09
申请号：US12857717
申请日：2010-08-17
申请人： Xuguang Wang , Shuiyuan Huang , Dimitar Dimitrov , Michael Tang , Song Xue
发明人： Xuguang Wang , Shuiyuan Huang , Dimitar Dimitrov , Michael Tang , Song Xue
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L45/085 , G11C16/0475 , H01L45/1206 , H01L45/1266 , H01L45/143 , H01L45/1658
摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region; and a gate stack structure over the substrate and between the source region and drain region. The gate stack structure includes a first solid electrolyte cell and a second solid electrolyte cell. The solid electrolyte cells having a capacitance that is controllable between at least two states. A gate contact layer is electrically coupled to a voltage source. The first solid electrolyte cell and the second solid electrolyte cell separate the gate contact layer from the substrate.
摘要翻译：公开了具有可编程电容的非易失性多位存储器。说明性的数据存储单元包括一个包括源极区和漏极区的衬底; 以及在衬底上以及在源极区和漏极区之间的栅叠层结构。栅堆叠结构包括第一固体电解质电池和第二固体电解质电池。固体电解质电池具有在至少两个状态之间可控制的电容。栅极接触层电耦合到电压源。第一固体电解质电池和第二固体电解质电池将栅极接触层与基板分离。

5. 发明申请

US20090289240A1 NON-VOLATILE MULTI-BIT MEMORY WITH PROGRAMMABLE CAPACITANCE 有权
标题翻译：具有可编程电容的非易失性多位存储器
公开(公告)号：US20090289240A1
公开(公告)日：2009-11-26
申请号：US12123685
申请日：2008-05-20
申请人： Xuguang Wang , Shuiyuan Huang , Dimitar Dimitrov , Michael Tang , Song Xue
发明人： Xuguang Wang , Shuiyuan Huang , Dimitar Dimitrov , Michael Tang , Song Xue
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , G11C16/0475 , H01L45/1206 , H01L45/1266 , H01L45/143 , H01L45/1658
摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at least two states and is proximate the source region. A second solid electrolyte cell is over the insulating layer and has a capacitance or resistance that is controllable between at least two states and is proximate the drain region. An insulating element isolates the first solid electrolyte cell from the second solid electrolyte cell. A first anode is electrically coupled to the first solid electrolyte cell. The first solid electrolyte cell is between the anode and the insulating layer. A second anode is electrically coupled to the second solid electrolyte cell. The second solid electrolyte cell is between the anode and the insulating layer. A gate contact layer is over the substrate and between the source region and drain region and in electrical connection with the first anode and the second anode. The gate contact layer is electrically coupled to a voltage source.
摘要翻译：公开了具有可编程电容的非易失性多位存储器。说明性数据存储单元包括包括源极区和漏极区的衬底。第一绝缘层在衬底上。第一固体电解质电池在绝缘层之上并且具有在至少两个状态之间可控并且在源极区附近的电容。第二固体电解质电池在绝缘层之上，并且具有在至少两个状态之间可控的并且在漏极区附近的电容或电阻。绝缘元件将第一固体电解质电池与第二固体电解质电池隔离。第一阳极电耦合到第一固体电解质电池。第一固体电解质电池在阳极和绝缘层之间。第二阳极电耦合到第二固体电解质电池。第二固体电解质电池在阳极和绝缘层之间。栅极接触层在衬底上并且在源极区域和漏极区域之间并且与第一阳极和第二阳极电连接。栅极接触层电耦合到电压源。

6. 发明申请

US20060176619A1 Magnet tunneling junction with RF sputtered gallium oxide as insulation barrier for recording head 有权
标题翻译：磁性隧道结与射频溅射氧化镓作为记录头的绝缘屏障
公开(公告)号：US20060176619A1
公开(公告)日：2006-08-10
申请号：US11054455
申请日：2005-02-09
申请人： Zheng Gao , Song Xue , Eric Granstrom
发明人： Zheng Gao , Song Xue , Eric Granstrom
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/21 , G11B5/3903 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetic tunneling junction device has a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating tunnel barrier layer made of gallium oxide. The insulating tunneling barrier layer is deposited by RF sputtering of gallium oxide. The magnetic tunneling junction device has a resistance area product less than 7 Ω·μm2.
摘要翻译：磁性隧道结装置具有固定的铁磁层，自由铁磁层和由氧化镓制成的绝缘隧道势垒层。通过氧化镓的RF溅射来沉积绝缘隧道势垒层。磁性隧道接合装置的电阻面积小于7Ω·m 2。

7. 发明申请

US20070139827A1 Magnetic sensing device including a sense enhancing layer 有权
标题翻译：磁感测装置包括感应增强层
公开(公告)号：US20070139827A1
公开(公告)日：2007-06-21
申请号：US11305778
申请日：2005-12-16
申请人： Zheng Gao , Brian Karr , Song Xue , Eric Granstrom , Khuong Tran , Yi Li
发明人： Zheng Gao , Brian Karr , Song Xue , Eric Granstrom , Khuong Tran , Yi Li
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , Y10T428/1114 , Y10T428/1121
摘要： A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 Ω·μm2.
摘要翻译：磁传感器包括具有在第一磁性部分和第二磁性部分之间的第一磁性部分，第二磁性部分和阻挡层的传感器堆叠。第一磁性部分和第二磁性部分中的至少一个包括多层结构，其具有与阻挡层相邻的具有正的磁致伸缩的第一磁性层，第二磁性层以及第一磁性层和第二磁性层之间的中间层层。磁传感器具有至少约80％的MR比，当磁传感器的电阻面积（RA）乘积约为1.0欧姆/平方毫米时。

8. 发明申请

US20050099738A1 Magnetoresistive sensor having specular sidewall layers 有权
标题翻译：具有镜面侧壁层的磁阻传感器
公开(公告)号：US20050099738A1
公开(公告)日：2005-05-12
申请号：US10702843
申请日：2003-11-06
申请人： Song Xue , Paul Anderson , Michael Kautzky , Xuefei Tang , Patrick Ryan
发明人： Song Xue , Paul Anderson , Michael Kautzky , Xuefei Tang , Patrick Ryan
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A transducing head includes a multilayered magnetoresistive sensor having an air bearing sidewall opposite aback sidewall and a first sidewall opposite a second sidewall. A specular layer is positioned on at least one of the air bearing sidewall, the back sidewall, the first sidewall, and the second sidewall. Each sidewall is transverse to the layers of the magnetoresistive sensor.
摘要翻译：换能头包括多层磁阻传感器，其具有空气轴承侧壁与相邻的侧壁和与第二侧壁相对的第一侧壁。镜面层位于空气轴承侧壁，后侧壁，第一侧壁和第二侧壁中的至少一个上。每个侧壁横向于磁阻传感器的层。

9. 发明申请

US20070097559A1 Magnetoresistive device having specular sidewall layers 有权
标题翻译：具有镜面侧壁层的磁阻器件
公开(公告)号：US20070097559A1
公开(公告)日：2007-05-03
申请号：US11637585
申请日：2006-12-12
申请人： Song Xue , Paul Anderson , Michael Kautzky , Xuefei Tang , Patrick Ryan
发明人： Song Xue , Paul Anderson , Michael Kautzky , Xuefei Tang , Patrick Ryan
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall.
摘要翻译：多层磁阻器件包括位于至少一个侧壁上的镜面层，并且铜层位于镜面层和侧壁之间。

10. 发明申请

US20110068825A1 NON-VOLATILE PROGRAMMABLE LOGIC GATES AND ADDERS 有权
标题翻译：非易失性可编程逻辑门和插件
公开(公告)号：US20110068825A1
公开(公告)日：2011-03-24
申请号：US12953544
申请日：2010-11-24
申请人： Haiwen Xi , Yang Li , Song Xue
发明人： Haiwen Xi , Yang Li , Song Xue
IPC分类号： H03K19/168 , H01L29/82
CPC分类号： H03K19/173 , G11C11/161 , G11C11/1673
摘要： Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output element is measured. The input element(s) include a free layer and the output element includes a free layer that is electrically connected to the free layer of the input element. The free layers of the input element and the output element may be electrically connected via magnetostatic coupling, or may be physically coupled. In some embodiments, the output element may have more than one free layer.
摘要翻译：具有至少一个输入元件和输出元件的自旋扭矩磁逻辑器件。通过输入元件施加电流，并测量输出元件两端产生的电阻或电压。输入元件包括自由层，并且输出元件包括电连接到输入元件的自由层的自由层。输入元件和输出元件的自由层可以通过静磁耦合电连接，或者可以物理耦合。在一些实施例中，输出元件可以具有多于一个的自由层。

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