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    • 4. 发明申请
    • High Utilization Multi-Partitioned Serial Memory
    • 高利用多分区串行存储器
    • US20110191548A1
    • 2011-08-04
    • US12697141
    • 2010-01-29
    • Michael J. MillerRichard S. Roy
    • Michael J. MillerRichard S. Roy
    • G06F12/08G06F13/12
    • G06F13/1647
    • A memory device that includes an input interface that receives instructions and input data on a first plurality of serial links. The instructions and input data are deserialized on the memory device, and are provided to a memory controller. The memory controller initiates accesses to a memory core in response to the received instructions. The memory core includes a plurality of memory partitions, which are accessed in a cyclic and overlapping manner. This allows each memory partition to operate at a slower frequency than the serial links, while properly servicing the received instructions. Accesses to the memory device are performed in a synchronous manner, wherein each access exhibits a known fixed latency.
    • 一种存储装置,包括在第一多个串行链路上接收指令和输入数据的输入接口。 指令和输入数据在存储器件上反序列化,并被提供给存储器控制器。 存储器控制器响应于接收的指令启动对存储器内核的访问。 存储器核心包括以循环和重叠的方式访问的多个存储器分区。 这允许每个存储器分区以比串行链路更低的频率工作,同时正确地维护接收到的指令。 以同步方式执行对存储设备的访问,其中每个访问呈现已知的固定等待时间。
    • 5. 发明授权
    • Integrated circuit package with segregated Tx and Rx data channels
    • 集成电路封装,具有隔离的Tx和Rx数据通道
    • US08368217B2
    • 2013-02-05
    • US13541658
    • 2012-07-03
    • Michael J. MillerMark William BaumannRichard S. Roy
    • Michael J. MillerMark William BaumannRichard S. Roy
    • H01L23/48
    • H01L23/50H01L2924/0002H01L2924/00
    • A chip layout isolates Rx terminals and Rx ports from Tx terminals and Tx ports. Tx terminals are grouped contiguously to each other, and are segregated as a group to a given edge of the package, Rx terminals are similarly grouped and segregated to a different edge of the package. Tx and Rx data channels are disposed in a respective single layer of the package, or both are disposed in a same single layer of the package. Rx ports and Tx ports are located at an approximate center of the package, with Tx and Rx ports disposed on respective opposite sides of an axis bisecting the package. Data signals received by, and transmitted from, the chip flow in a same direction, from a first edge of the package to the center of the package and from the center of the package to a second edge of the package, respectively.
    • 芯片布局将Rx端子和Rx端口与Tx端子和Tx端口隔离。 Tx端子彼此连续分组,并且作为组分离到包装的给定边缘,Rx端子被类似地分组并分离到包装的不同边缘。 Tx和Rx数据通道设置在封装的相应单层中,或者两者都被布置在封装的相同的单层中。 Rx端口和Tx端口位于封装的大致中心处,Tx和Rx端口设置在平分封装的轴的相应相对两侧。 分别从包装的第一边缘到包装的中心以及从包装的中心到包装的第二边缘的相同方向从芯片流接收和传输的数据信号。
    • 6. 发明申请
    • INTEGRATED CIRCUIT PACKAGE WITH SEGREGATED TX AND RX DATA CHANNELS
    • 集成电路封装与分离的TX和RX数据通道
    • US20120267769A1
    • 2012-10-25
    • US13541658
    • 2012-07-03
    • Michael J. MillerMark BaumannRichard S. Roy
    • Michael J. MillerMark BaumannRichard S. Roy
    • H01L23/58
    • H01L23/50H01L2924/0002H01L2924/00
    • A chip layout isolates Rx terminals and Rx ports from Tx terminals and Tx ports. Tx terminals are grouped contiguously to each other, and are segregated as a group to a given edge of the package, Rx terminals are similarly grouped and segregated to a different edge of the package. Tx and Rx data channels are disposed in a respective single layer of the package, or both are disposed in a same single layer of the package. Rx ports and Tx ports are located at an approximate center of the package, with Tx and Rx ports disposed on respective opposite sides of an axis bisecting the package. Data signals received by, and transmitted from, the chip flow in a same direction, from a first edge of the package to the center of the package and from the center of the package to a second edge of the package, respectively.
    • 芯片布局将Rx端子和Rx端口与Tx端子和Tx端口隔离。 Tx端子彼此连续分组,并且作为组分离到包装的给定边缘,Rx端子被类似地分组并分离到包装的不同边缘。 Tx和Rx数据通道设置在封装的相应单层中,或者两者都被布置在封装的相同的单层中。 Rx端口和Tx端口位于封装的大致中心处,Tx和Rx端口设置在平分封装的轴的相应相对两侧。 分别从包装的第一边缘到包装的中心以及从包装的中心到包装的第二边缘的相同方向从芯片流接收和传输的数据信号。
    • 7. 发明授权
    • High utilization multi-partitioned serial memory
    • 高利用率多分区串行存储器
    • US09342471B2
    • 2016-05-17
    • US12697141
    • 2010-01-29
    • Michael J. MillerRichard S. Roy
    • Michael J. MillerRichard S. Roy
    • G06F12/00G06F13/16
    • G06F13/1647
    • A memory device that includes an input interface that receives instructions and input data on a first plurality of serial links. The instructions and input data are deserialized on the memory device, and are provided to a memory controller. The memory controller initiates accesses to a memory core in response to the received instructions. The memory core includes a plurality of memory partitions, which are accessed in a cyclic and overlapping manner. This allows each memory partition to operate at a slower frequency than the serial links, while properly servicing the received instructions. Accesses to the memory device are performed in a synchronous manner, wherein each access exhibits a known fixed latency.
    • 一种存储装置,包括在第一多个串行链路上接收指令和输入数据的输入接口。 指令和输入数据在存储器件上反序列化,并被提供给存储器控制器。 存储器控制器响应于接收的指令启动对存储器内核的访问。 存储器核心包括以循环和重叠的方式访问的多个存储器分区。 这允许每个存储器分区以比串行链路更低的频率工作,同时正确地维护接收到的指令。 以同步方式执行对存储设备的访问,其中每个访问呈现已知的固定等待时间。
    • 8. 发明授权
    • Multiple cycle memory write completion
    • 多周期内存写入完成
    • US08446755B2
    • 2013-05-21
    • US13369253
    • 2012-02-08
    • Richard S. Roy
    • Richard S. Roy
    • G11C11/24G11C7/00G11C8/00
    • G11C7/1015G11C11/406G11C11/40618G11C2207/229
    • A memory system that reduces the memory cycle time of a memory cell by performing an incomplete write operation. The voltage on a storage node of the memory cell does not reach a full supply voltage during the incomplete write operation. The incomplete write operation is subsequently completed by one or more additional accesses, wherein the voltage on the storage node is pulled to a full supply voltage. The incomplete write operation may be completed by: subsequently writing the same data to the memory cell during an idle cycle; subsequently writing data to other memory cells in the same row as the memory cell; subsequently reading data from the row that includes the memory cell; or refreshing the row that includes the memory cell during an idle cycle. One or more idle cycles may be forced to cause the incomplete write operation to be completed in a timely manner.
    • 一种通过执行不完整的写入操作来减少存储器单元的存储器周期时间的存储器系统。 在不完全写入操作期间,存储单元的存储节点上的电压未达到全电源电压。 随后通过一个或多个附加访问完成不完整的写入操作,其中存储节点上的电压被拉至完全电源电压。 可以通过以下方式完成不完整的写入操作:随后在空闲周期期间将相同的数据写入存储器单元; 随后将数据写入到与存储器单元相同的行中的其他存储单元; 随后从包括存储器单元的行读取数据; 或者在空闲周期期间刷新包含存储单元的行。 可能会迫使一个或多个空闲周期及时完成不完整的写入操作。
    • 9. 发明申请
    • Hierarchical Organization Of Large Memory Blocks
    • 大内存块的分层结构
    • US20110191564A1
    • 2011-08-04
    • US12697132
    • 2010-01-29
    • Richard S. Roy
    • Richard S. Roy
    • G06F12/00G06F12/02
    • G11C11/408G11C5/025G11C5/063G11C7/1006G11C7/1039G11C7/1042G11C7/1069G11C7/1096G11C11/4096G11C11/4097
    • A multi-bank memory system includes one or more levels of logical memory hierarchy to increase the available random cyclic transaction rate of the memory system. The memory system includes a plurality of multi-bank partitions, each having a corresponding partition interface. Each partition interface accesses the corresponding multi-bank partition at a first frequency. A global interface may access the partition interfaces at a second frequency, which is equal to the first frequency times the number of partition interfaces. Alternately, a plurality of cluster interfaces may access corresponding groups of the partition interfaces, wherein each cluster interface accesses the corresponding group of partition interfaces at a second frequency that is faster than the first frequency. A global interface accesses the cluster interfaces at a third frequency that is greater than the second frequency.
    • 多存储存储器系统包括一个或多个逻辑存储器层级以增加存储器系统的可用随机循环事务速率。 存储器系统包括多个多块分区,每个分区具有对应的分区接口。 每个分区接口以第一个频率访问相应的多存储体分区。 全局接口可以以等于第一个频率乘以分区接口数的第二个频率访问分区接口。 或者,多个集群接口可以访问分区接口的相应组,其中每个集群接口以比第一频率快的第二频率访问对应的分组接口组。 全局接口以大于第二个频率的第三个频率访问集群接口。