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    • 2. 发明授权
    • Calibration of temperature control system for semiconductor processing chamber
    • 半导体处理室温度控制系统校准
    • US08047706B2
    • 2011-11-01
    • US12273440
    • 2008-11-18
    • Matthew G. GoodmanMark HawkinsRavinder AggarwalMichael GivensEric HillGregory Bartlett
    • Matthew G. GoodmanMark HawkinsRavinder AggarwalMichael GivensEric HillGregory Bartlett
    • G01K15/00
    • G01K15/00
    • Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.
    • 用于校准气相沉积室中的温度控制系统的方法和系统。 温度传感器感测半导体处理室内的温度并产生输出信号。 温度控制系统通过基于输出信号控制加热装置来控制室温度。 一种方法包括指示控制系统目标设定点温度,以及通过气相沉积工艺将一层材料沉积在腔室的表面上。 在沉积层时测量该层的性质的变化,已知随着层的厚度周期性变化的性质增加。 允许测量的特性循环变化一个或多个循环。 如果一个或多个循环的时间段与与设定点温度相关联的期望时间段之间存在差异,则基于该差异来调整温度控制系统。
    • 3. 发明授权
    • Susceptor pocket profile to improve process performance
    • Susceptor口袋轮廓提高过程性能
    • US06840767B2
    • 2005-01-11
    • US10744848
    • 2003-12-22
    • Matthew G. Goodman
    • Matthew G. Goodman
    • C23C16/458H01L21/205H01L21/3065H01L21/324H01L21/687F27D5/00
    • H01L21/68735C23C16/4581C23C16/4584H01L21/6875
    • An apparatus and method to position a wafer onto a wafer holder and to maintain a uniform wafer temperature is disclosed. The wafer holder or susceptor comprises a recess or pocket whose surface is concave and includes a grid containing a plurality of grid grooves separating protrusions. The concavity and grid grooves define an enclosed flow volume between a supported wafer and the susceptor surface, as well as an escape area, or total cross-sectional area of the grid grooves opening out from under the periphery of the wafer. These are chosen to reduce the wafer slide and curl during wafer drop-off and wafer stick during wafer pick-up, while improving thermal uniformity and reducing particle problems. In another embodiment, centering locators in the form of thin, radially placed protrusions are provided around the edge of the susceptor pocket to reduce further the possibility of contact between the wafer and the outer edge of the susceptor. These features help to achieve temperature uniformity, and therefore quality of the process result, across the wafer during processing.
    • 公开了一种将晶片定位在晶片保持器上并保持均匀的晶片温度的装置和方法。 晶片保持器或基座包括其表面是凹形的凹槽或凹槽,并且包括包含多个分隔凸起的格栅槽的格栅。 凹槽和格栅槽在支撑的晶片和基座表面之间限定封闭的流体积,以及从晶片周边开出的栅格槽的逸出区域或总横截面面积。 这些选择用于在晶片吸收期间在晶片脱落和晶片棒期间减少晶片滑动和卷曲,同时提高热均匀性并减少颗粒问题。 在另一个实施例中,围绕基座袋的边缘设置呈细径向放置的突起形式的定心定位器,以进一步减小晶片与基座的外边缘之间的接触的可能性。 这些特征有助于在加工过程中在晶片上实现温度均匀性,从而达到加工效果的质量。
    • 5. 发明授权
    • Wafer holder with peripheral lift ring
    • 带外围电梯环的晶圆架
    • US06776849B2
    • 2004-08-17
    • US10100308
    • 2002-03-15
    • Ravinder K. AggarwalTony J. KeetonMatthew G. Goodman
    • Ravinder K. AggarwalTony J. KeetonMatthew G. Goodman
    • H01L2100
    • H01L21/68735C23C16/4584C23C16/4585C23C16/481H01L21/68742
    • A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.
    • 用于在CVD处理室内支撑晶片的晶片保持器包括构造成支撑晶片的底部周边表面的可垂直移动的提升环,以及配置成在晶片处理期间支撑晶片的顶部平坦表面的内部插塞。 提升环具有构造成紧密围绕内塞的中心孔。 当将晶片装载到晶片保持器上时,升降环升高到内塞上方。 晶片在提升位置被装载到提升环上。 然后,提升环保持在升高位置一段足以允许晶片温度上升至足以显着降低甚至基本上防止晶片对晶片的热冲击的水平的时间,当晶片与 内塞 然后升降环下降到与内塞的周围接合。 这是晶片保持器的晶片加工位置。
    • 8. 发明授权
    • Localized heating of substrates using optics
    • 使用光学元件的基板的局部加热
    • US06879777B2
    • 2005-04-12
    • US10265519
    • 2002-10-03
    • Matthew G. GoodmanTony J KeetonRavinder AggarwalMark Hawkins
    • Matthew G. GoodmanTony J KeetonRavinder AggarwalMark Hawkins
    • H01L21/00F26B3/30
    • H01L21/67115
    • An apparatus for processing a semiconductor substrate, including a process chamber having a plurality of walls and a substrate support to support the substrate within the process chamber. A radiative heat source is positioned outside the process chamber to heat the substrate through the walls when the substrate is positioned on the substrate support. In some embodiments, lenses are positioned between the heat source and the substrate to focus or diffuse radiation from the heat source and thereby selectively alter the radiation intensity incident on certain portions of the substrate. In other embodiments, diffusing surfaces are positioned between the heat source and the substrate to diffuse radiation from the heat source and thereby selectively reduce the radiation intensity incident on certain portions of the substrate.
    • 一种用于处理半导体衬底的设备,包括具有多个壁的处理室和用于在处理室内支撑衬底的衬底支撑件。 当衬底定位在衬底支撑件上时,辐射热源位于处理室外部以通过壁加热衬底。 在一些实施例中,透镜位于热源和基板之间,以聚焦或散射来自热源的辐射,从而选择性地改变入射在基板的某些部分上的辐射强度。 在其它实施例中,扩散表面位于热源和衬底之间以扩散来自热源的辐射,从而选择性地降低入射到衬底的某些部分上的辐射强度。